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1.
基于密度泛函理论,本文通过OTFG赝势方法计算了本征β-Ga2O3以及Cu-N共掺后β-Ga2O3的晶格常数、电子结构以及光学特性.计算结果表明本征β-Ga2O3的禁带宽度为4.5 eV;Cu和N掺入β-Ga2O3后属于受主杂质,并且引入了深受主能级,这表明Cu-N共掺后β-Ga2O3变为p型半导体材料;光学性质计算结果表明本征β-Ga2O3的静介电函数为2.5,掺杂后β-Ga2O3的静介电函数增大,对电荷的存储能力增强;此外,Cu-N的共掺对β-Ga2O3的吸收系数、反射率在能量较低的区域的影响较大,而对能量较高的区域影响较小.  相似文献   

2.
张易军  闫金良  赵刚  谢万峰 《物理学报》2011,60(3):37103-037103
采用基于密度泛函理论(DFT)的第一性原理平面波超软赝势(USPP)法, 在广义梯度近似(GGA)下计算了本征β-Ga2O3和Si掺杂β-Ga2O3的能带结构、电子态密度、差分电荷密度和光学特性. 在蓝宝石衬底(0001)晶面上用脉冲激光沉积(PLD)法制备了本征β-Ga2O3和Si掺杂β-Ga2O3薄膜, 测量了其吸收光谱和反射光 关键词: 第一性原理 超软赝势 密度泛函理论 2O3')" href="#">Si掺杂β-Ga2O3  相似文献   

3.
本文在室温下利用射频磁控溅射技术在(001)蓝宝石衬底上制备了不同厚度的β-Ga2O3薄膜,随后将其置于氩气气氛中800℃退火1 h.利用XRD,SEM,UV-Vis分光光度计、PL光致发光光谱仪和Keithley 4200-SCS半导体表征系统等考察薄膜厚度对所得氧化镓薄膜相组成、表面形貌、光学性能以及光电探测性能的影响.结果表明,随着薄膜厚度的增加,薄膜结晶质量提高,840 nm薄膜最佳,1050 nm薄膜结晶质量略有降低.不同厚度β-Ga2O3薄膜在波长200—300 nm日盲区域内均具有明显的紫外光吸收,禁带宽度随着薄膜厚度的增加而增加.PL谱中各发光峰峰强随着薄膜厚度的增加而减小,表明氧空位及其相关缺陷受到抑制.在β-Ga2O3薄膜基础上制备出日盲紫外光电探测器的探测性能(光暗电流比,响应度,探测率,外量子效率)也随薄膜厚度的增加呈先增后减的趋势.厚度约为840 nm的β-Ga2O3紫外光电探测器,在5...  相似文献   

4.
李政达  焦腾  董鑫  刁肇悌  陈威 《发光学报》2022,43(4):545-551
高厚度的Ga2O3薄膜能够提高器件的击穿电压,这种高厚度Ga2O3薄膜往往是通过HVPE法制备的。然而HVPE法存在着成本高、设备少等缺点。本文通过金属有机化学气相沉积(MOCVD)工艺,以SiH4为n型掺杂源,在Ga2O3衬底上生长了高厚度的n型β-Ga2O3薄膜,并且研究了SiH4流量对β-Ga2O3性质的影响。实验中制备的β-Ga2O3薄膜厚度达到4.15μm。薄膜的晶体质量高,表面致密光滑且呈现台阶流生长模式。随着SiH4流量增加,晶体质量逐渐降低,电子浓度显著增加,电子迁移率降低。目前,高厚度β-Ga2O3薄膜的电子浓度可以在3.6×1016~5.3×1018 cm...  相似文献   

5.
宽禁带半导体β-Ga2O3因为具有优良的物理化学性能而成为研究热点.本文基于DFT(Density Functional Theory)的第一性原理方法,先采用PBE(Perdew-Burke-Ernzerhof)中的GGA(Generalized Gradient Approximation)和GGA+U(Generalized Gradient Approximation-Hubbard U)的方法计算了本征β-Ga2O3,Lu掺杂浓度为12.5%的β-Ga2O3及Lu-Eu共掺杂浓度为25%的β-Ga2O3结构的晶格常数、能带结构和体系总能量.发现采用GGA+U的方法计算的带隙值更接近实验值,于是采用GGA+U的方法计算了本征β-Ga2O3,Lu掺杂的β-Ga2O3以及Lu-Eu共掺杂的β-Ga2O...  相似文献   

6.
第三代半导体β-Ga2O3因其优异的性质在近年来备受国内外的关注,而获得质量较好的β-Ga2O3薄膜也就成了其广泛应用的关键.本文采用射频磁控溅射方法,以C面蓝宝石(Al2O3)为衬底制备β-Ga2O3薄膜,并研究后退火工艺中退火时间对制得的β-Ga2O3薄膜材料的影响. XRD和AFM表征结果表明,随着退火时间的增加,薄膜的衍射峰强度表现为先增大后减小再增大的特性,半峰宽为先增大后减小,而晶粒尺寸与半峰宽相反;薄膜表面粗糙程度呈现先下降后上升的趋势.另外,利用积分球式分光光度计测试了薄膜的光学特性,结果表明薄膜的吸收光谱存在两个吸收峰值,分别位于250 nm和300 nm附近处,在深紫外区域有较好的吸收特性.  相似文献   

7.
近年来,第三代宽禁带半导体材料β-Ga2O3受到越来越多的关注,在材料制备、掺杂、刻蚀等方面都有广泛研究.射频磁控溅射是常用的β-Ga2O3薄膜制备方法之一,而磁控溅射法制膜往往需要进行退火处理以提高薄膜质量.本文研究溅射功率对射频磁控溅射在C面蓝宝石基底上制备得到的β-Ga2O3薄膜特性的影响. X射线衍射(XRD)、原子力显微镜(AFM)和扫描电子显微镜(SEM)表征结果表明,随着溅射功率的增大,半峰宽呈现先增大后减小再增大的趋势,晶粒尺寸变化与之相反.此外,通过积分球式分光光度计,研究了溅射功率对β-Ga2O3薄膜光学特性的影响.光学特性方面,薄膜吸光度随着波长的增加,先升高后下降、再升高再下降,最后吸收边在700 nm附近截止,不同溅射功率制备的薄膜吸收光谱都存在两个吸收峰.  相似文献   

8.
以铁箔为原材料和基片,通过控制热氧化过程中的宏观实验条件(载气流量及其组分、压强、温度分布和反应时间等),实现了α-Fe2O3一维纳米结构的可控生长,获得了大面积(10mm×10mm)、单分散性好、沿[110]方向生长的α-Fe2O3纳米带或纳米线阵列. 对不同宏观实验条件下所制备的样品进行形貌和晶格结构表征和分析,认为热氧化过程中α-Fe2O3一维纳米结构的生长遵循类似气- 关键词: 2O3')" href="#">α-Fe2O3 一维纳米结构 热氧化法  相似文献   

9.
运用第一性原理杂化泛函研究了本征缺陷(O空位和Ga空位)对于β-Ga2O3的几何结构和电子性质的影响.计算结构表明:杂化泛函B3LPY能很好的描述β-Ga2O3的几何结构和电子结构,能与实验符合.含O缺陷的形成能在富氧和贫氧下分别为4.04和0.92 eV,优于含Ga缺陷的体系.空位缺陷的出现对于理想Ga2O3的晶格参数影响不显著,只是在O空位体系中,空位附近Ga-O键长有0.1?变化.含空位缺陷的体系的禁带中都有缺陷能级的出现,含Ga和O空位缺陷的Ga2O3的光跃迁能分别为1.93 eV(β自旋)和2.92 eV,有很明显的光吸收的拓展,从理论上解释了Ga2O3作为光催化材料的潜在应用.  相似文献   

10.
用热蒸发CVD法制备了β-Ga2O3纳米材料, 并用光致发光(PL)方法研究了其发光特性.X射线衍射分析显示, 产物为单斜结构的β-Ga2O3.扫描电子显微镜测试表明:在较小氧流量条件下制备的产物为β-Ga2O3纳米带, 宽度小于100nm, 长度有几微米; 较大氧流量时制备出β-Ga2O3纳米晶粒结构, 晶粒尺度在80-156nm.PL的测试表明: β-Ga2O3纳米结构在波长516nm处有很强的绿色发光带, 且随着氧流量的逐渐增加发光强度逐渐减弱.在氧气氛中900℃退火2h处理后, 发光强度减弱, 进一步证实氧空位缺陷是β-Ga2O3纳米材料发光的主要因素.  相似文献   

11.
马海林  范多旺  牛晓山 《中国物理 B》2010,19(7):76102-076102
Monoclinic gallium oxide (β-Ga_2O_3) nanobelts are synthesized from gallium and oxygen by thermal evaporation in an argon atmosphere and their NO_2 sensing properties are studied at room temperature.Electron microscopy studies show that the nanobelts have breadths ranging from 30 to 50 nm and lengths up to tens of micrometers.Both the x-ray diffraction (XRD) and the selected are electron diffraction (SAED) examinations indicate that β-Ga_2O_3 nanobelts have grown into single crystals.Room temperature NO_2 sensing tests show that the current of individual β-Ga_2O_3 nanobelt decreases quickly,and then gently when the NO_2 concentration increases from low to high.It is caused by the NO_2 molecule chemisorption and desorption processes in the surface of β-Ga_2O_3 nanobelt.  相似文献   

12.
This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si(111) substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.  相似文献   

13.
Beta-gallium oxide (β-Ga2O3) nanobelts were synthesized through microwave plasma chemical vapor deposition (MPCVD) of liquid-phase gallium containing H2O in Ar atmosphere using silicon as the substrate. Unlike the common microwave plasma method, the H2O, not mixture of the gas, was employed to synthesize the nanostructures. β-Ga2O3 nanobelts prepared by MPCVD have not been reported. The thickness of β-Ga2O3 nonobelts was 20–30 nm and length of them was tens to hundreds of microns. The morphology and structure of the products were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and X-ray diffraction (XRD). Possible growth mechanisms of the β-Ga2O3 nanobelts are briefly discussed.  相似文献   

14.
赵银女 《光子学报》2014,41(10):1242-1246
β-Ga2O3是一种宽带隙半导体材料,能带宽度Eg≈5.0eV,在光学和光电子学领域有广泛的应用。用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜,用紫外 可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga2O3薄膜及Zn掺杂β-Ga2O3薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响。退火后的β-Ga2O3薄膜为多晶结构,与本征β-Ga2O3薄膜相比,Zn掺杂β-Ga2O3薄膜的β-Ga2O3(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°。退火后的Zn掺杂β-Ga2O3薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强。表明退火后Zn掺杂β-Ga2O3薄膜中的Zn原子被激活充当受主。  相似文献   

15.
Near-infrared (NIR) persistent luminescent β-Ga2O3:Cr3+ nanowire assemblies were synthesized by a hydrothermal process followed by calcination. The phosphor exhibits more than 4 h afterglow in the wavelength range of 650-850 nm after ceasing the ultraviolet light (280-360 nm) irradiation. The trap structure and persistent luminescence mechanism were revealed by thermoluminescence measurement. The β-Ga2O3:Cr3+ nanowire assemblies may find applications as identification taggants in security and optical probes in bio-imaging.  相似文献   

16.
In this study, we report the novel β-Ga2O3 nanostructures synthesized by the thermal evaporation of Ga droplet in the presence of Au catalysts at 900 °C. The morphology and structure of the products were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The single-crystalline β-Ga2O3 nanosheets have lateral dimensions up to several tens of microns. Large arrays of column-like layered crystal β-Ga2O3 structures that consisted of many nanosheets were formed on the Au-coated silicon substrate under the suitable vapor concentration. These novel β-Ga2O3 nanostructures are expected to have potential application in functional nanodevices.  相似文献   

17.
Eu3+-doped β-Ga2O3 nanofibers were fabricated by electrospinning. The influence of Eu3+ concentration on the photoluminescence properties of the obtained nanofibers was investigated. The morphology and structure of β-Ga2O3:Eu3+ were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and Raman spectra. The diameter of the Eu3+-doped β-Ga2O3 nanofibers was in the range of 180-300 nm. When the β-Ga2O3:Eu3+ nanofibers were excited by 325 nm wavelength, the main emission peak of the samples was 620 nm (5D07F2), which corresponded to a typical red emission (5D07Fj (j = 1, 2, 3, 4) intra-4f transitions of Eu3+ ions). In addition, the concentration quench effect and energy transfer mechanism in β-Ga2O3:Eu3+ were also discussed.  相似文献   

18.
Monoclinic gallium oxide (β-Ga2O3) nanowires with lengths of tens of micrometers and diameters ranging from 100 to 250 nm are synthesized using simple physical evaporation based on vapor–liquid–solid (VLS) mechanism. The as-synthesized straight β-Ga2O3 nanowires show excellent diameter uniformity and sidewall smoothness, making them suitable for optical wave-guiding. Light from a fiber taper is launched into the nanowire by means of evanescent coupling. Measured propagation loss of the nanowire at 633 nm wavelength is on the order of 10 dB/mm. Favorable mechanical strength of these nanowires for elastic bending is also observed. Our results suggest that β-Ga2O3 nanowires are promising building blocks for micro- and nanophotonic circuits and devices.  相似文献   

19.
The electronic structure and optical properties of N-doped β-Ga2O3 and N-Zn co-doped β-Ga2O3 are investigated by the first-principles calculation. In the N-Zn co-doped β-Ga2O3 system, the lattice parameters of a, b, c, V decrease and the formation energy of N-Zn co-doped β-Ga2O3 is smaller in comparison with N-doped β-Ga2O3. There are two shallower acceptor impurity levels in N-Zn co-doped β-Ga2O3. Comparing with N-doped β-Ga2O3, the major absorption peak is red-shifted and the impurity absorption edge is blue-shifted for N-Zn co-doped β-Ga2O3. The results show that the N-Zn co-doped β-Ga2O3 is found to be a better method to push p-type conductivity in β-Ga2O3.  相似文献   

20.
β-Ga2O3 nanostructures including nanowires, nanoribbons and nanosheets were synthesized via thermal annealing of gold coated GaAs substrates in N2 ambient. GaAs substrates with different dopants were taken as the starting material to study the effect of doping on the growth and photoluminescence properties of β-Ga2O3 nanostructures. The nanostructures were investigated by Grazing Incident X-ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy, Energy Dispersive X-ray Spectroscopy, room temperature photoluminescence and optical absorbance. The selected area electron diffraction and High resolution-TEM observations suggest that both nanowires and nanobelts are single crystalline. Different growth directions were observed for nanowires and nanoribbons, indicating the different growth patterns of these nanostructures. The PL spectra of β-Ga2O3 nanostructures exhibit a strong UV-blue emission band centered at 410 nm, 415 nm and 450 nm for differently doped GaAs substrates respectively. A weak red luminescence peak at 710 nm was also observed in all the samples. The optical absorbance spectrum showed intense absorption features in the UV spectral region. The growth and luminescence mechanism in β-Ga2O3 nanostructures are also discussed.  相似文献   

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