Two Stages of Impact Fracture of Polycrystalline ZnS and ZnSe Compounds

Mechanoluminescence (ML) in ductile solids is caused by the motion of charged dislocations in the deformable material. Interatomic bond ruptures followed by electronic structure reconfiguration are the main source of ML in brittle bodies. We studied ML in ceramics composed of mixed ionic/covalent ZnS and ZnSe compounds, which are generated during impact loading higher than the limit deformation. Depending on synthesis method and thermal treatment, the resulting ceramics had different size and geometry of grains and intergrain boundary structure, which presumably may have a significant effect on the dislocation glide. In both materials, the time sweeps of ML pulses have two well-resolved peaks. The position of the peaks along the time axis is substantially dependent on the size of ceramic-forming grains and, to a smaller extent, on the barrier properties of intergrain boundaries. The first peak is associated with plastic deformation preceding disintegration of the crystal structure. The second peak emerges upon crack nucleation as interatomic bonds are ruptured and the material is undergoing local deformation in tips of propagating cracks. The distributions of ML pulse amplitudes (the dependences between the number of pulses and their amplitude) calculated for both peaks individually follow the power law, which demonstrates that the electronic processes having different excitation mechanisms (dislocation motion vs bond rupture) are correlated.

     

Irreproducibility of acoustic emission under cyclic irradiation of solids by an infrared laser pulse

Acoustic emission (AE) caused by a stress wave in solid material samples with various thermophysical properties, i.e., copper, aluminum, and glass upon exposure to СO₂ laser pulses is studied. It is found that the general AE picture (the AE signal arrival time, its amplitude, and others) is not reproduced during repeated experiments following one after another, which indicates irreversible local changes occurred in the material structure. The effect of the critical material energy density on the AE pattern during the laser exposure is demonstrated.     

Initiation of impact fracture in SiO2 ceramics

The results of high-speed recording of fractal luminescence (FL) and acoustic emission (AE) during the impact fracture of the surface of quartz ceramic are presented. FL results from the breakage of covalent bonds, and AE appears during the motion of microscopic and larger cracks. Measurements are performed on samples chosen after each stage of heat treatment, namely, drying at 100°C, sintering at 1190°C, and flame treatment of the sample surface. After each temperature cycle, the hardness of the material is measured and the connectivity of the silicate network of glass is estimated by IR reflection spectroscopy. The energy released during damage formation is determined from the FL and AE intensities. The energy distribution in the FL signals recorded after an impact in all samples is shown to obey the power law that is characteristic of the cooperative phenomena occurring in nonequilibrium processes. This finding indicates correlated fracture development at a nanostructure level. In AE signal series, a power energy distribution is detected only in sintered not glassy ceramic.     

Q235钢板局部腐蚀声发射信号特性研究

为解决腐蚀声发射源特征提取和识别的难题,直接从理论上证明了腐蚀声发射监测的有效性并推导出声发射信号特征。气泡破裂声发射信号幅值近似与气泡半径平方和液位高度成正比,频率与气泡半径成反比;钢板及其腐蚀产物开裂声发射信号幅值与开裂位置局部应力强度成正比,频率与裂纹扩展速度成正比,与裂纹扩展距离成反比。用低频和高频两套声发射系统,同时长时间监测Q235钢板在10%FeCl₃·6H₂O、10%FeCl₃·6H₂O加0.01 mol/L HCl混合液、5%CuSO₄·5H₂O溶液中的腐蚀情况,辅以监测钢板及钢板腐蚀产物开裂作为验证实验。通过对声发射信号的参数及谱分析,得出不同声发射源可以通过撞击数及功率谱在频域的分布来有效区分。实验结果与理论分析相吻合,研究结果对腐蚀声发射监测技术具有重要指导意义。      

CdSe/ZnSe复合结构非对称量子阱的发光特性

利用MOCVD技术在GaAs衬底上外延生长了非对称量子阱结构CdSe/ZnSe材料,通过对其稳态变温光谱及变激发功率光谱,研究了其发光特性。稳态光谱表明:在82～141K时,观测到的两个发光峰来源于不同阱层厚度的量子阱激子发光,用对比实验验证了高能侧发光的来源。宽阱发光强度先增加后减小,将其归结为激子隧穿与激子热离化相互竞争的结果。通过Arrhenius拟合,对宽阱激子热激活能进行了计算。82K时变激发功率PL光谱表明:由于激子隧穿的存在,使得窄阱发光峰位不随激发功率变化而变化,宽阱发光峰位随激发功率增加发生了蓝移,并对激子隧穿进行了实验验证。     

Temperature-dependent photoluminescence of vertically stacked self-assembled CdSe quantum dots in ZnSe

We studied the optical properties of multiple layers of self-assembled CdSe quantum dots (QDs) embedded in ZnSe, grown by molecular beam epitaxy. The ZnSe barrier thicknesses separating the QD layers ranged from 30 to 60 monolayers (ML). For stacks with thinnest ZnSe barriers photoluminescence (PL) measurements reveal blue shifts as large as 180 meV relative to PL observed for single QD layers. The amount of blue shift decreases with increasing barrier thickness, and for the 60 ML spacer the PL energy returns to that emitted by a single layer of QDs. Temperature dependence of the integrated intensity of the emission spectra reveals that the activation energy for PL quenching is largest for barrier thicknesses of 30 and 45 ML. We tentatively attribute these effects to a decrease in the size of the vertically stacked QDs when the thickness of the barrier layers is small.     

Analysis of acoustic emission signals originating from bainite and martensite formation

In this paper the characteristics of acoustic signals generated during bainite and martensite formation are studied. The results are discussed in a semi-quantitative manner, since a thorough quantitative analysis of the signals is not feasible because of the limited frequency bandwidth of the system and the effect of internal sample reflections on the signal. The frequency spectra of acoustic emission signals are interpreted using a dislocation source model adopted from acoustic emission studies of plastic deformation. It is assumed that the predominant source of acoustic emission (AE) during displacive transformations is the movement of dislocations, i.e. the slip taking place during growth in order to relieve internal stresses. The results show that the mean frequency of AE signals generated during bainite formation is significantly larger than that of martensitic AE signals. This difference in the spectral density of the AE signals can be attributed to the difference in interface motion of the two transformations, and the consequent different behaviour of the dislocations involved.     

Deformation-induced excitation of the luminescence centres in coloured alkali halide crystals

The present paper reports the deformation-induced excitation of the luminescence centres in coloured alkali halide crystals. The peaks of the mechanoluminescence (ML) in γ-irradiated KCl, KBr, KI, NaCl and LiF crystals lie at 455, 463, 472, 450 and 485 nm, i.e. at 2.71, 2.67, 2.62, 2.75 and 2.56 eV, respectively. From the similarity between the ML spectra and the thermoluminescence (TL) and afterglow spectra, the ML of KCl, KBr, KI, NaCl and LiF crystals can be assigned to the deformation-induced excitation of the halide ions in V₂-centres or any other hole centres. For the deformation-induced excitation of the halide ions in V₂-centres, or in other centres, the following four models may be considered: (i) free electron generation model, (ii) electron–hole recombination model, (iii) dislocation exciton radiative decay model and (iv) dislocation exciton energy transfer model. The dislocation exciton energy transfer model is found to be suitable for the coloured alkali halide crystals. According to the dislocation exciton energy transfer model, during the deformation of solids the moving dislocations capture electrons from the F-centres and then they capture holes from the hole centres and consequently the formation of dislocation excitons takes place. Subsequently, the energy released during the decay of dislocation excitons excites the halide ions of the V₂-centres or any other hole centres and the light emission occurs during the de-excitation of the excited halide ions, which is the characteristic of halide ions. The mechanism of ML in irradiated alkali halide crystals is different from that of the TL in which the electrons released form F-centres due to the thermal vibrations of lattices reach the conduction band and the energy released during the electron–hole recombination excites the halide ions in V₂-centres or in any other hole centres. It is shown that the phenomenon of ML may give important information about the dislocation bands in coloured alkali halide crystals.     

Relationship between acoustic emission energy and the kinetics of martensite formation in plain carbon steels

The kinetics of the martensitic transformation in Fe-0.80C determined on the basis of dilatometry data is compared to the acoustic emission (AE) energy accompanying the transformation in the same steel reported in a previous study. The discrepancy between the AE energy and the volume fraction of martensite indicates that the mechanism for the generation of AE during the martensitic transformation is not solely dependent on the kinetics and the associated moving interfaces as suggested in previous studies. During the growth of martensite, slip takes place in order to relieve internal stresses, and dislocations are thought to be mainly introduced in the relatively soft austenite matrix. The quantitative analysis in this study demonstrates that the AE energy generated per unit time is a function of both the transformation kinetics and the volume fraction of remaining austenite. This strongly indicates that the moving dislocations associated with the plastic deformation of the austenite surrounding the as-formed martensite are the dominant sources of the generated acoustic waves. This improved AE source model is consistent with the well-accepted mechanism of AE during conventional plastic deformation due to an external load.     

蒸养再生骨料混凝土断裂声发射特征*

为研究蒸汽养护对再生骨料混凝土断裂过程损伤特征的影响,开展了再生骨料混凝土三点弯断裂试验,并采用声发射技术对损伤过程进行了监测分析。结果表明,蒸养降低了再生骨料混凝土断裂峰值荷载,断裂过程中声发射信号强度低于标准养护试件。声发射振铃计数、撞击数、b值等参数能够准确反映再生骨料混凝土断裂过程损伤演变规律。加载上升阶段,声发射信号活动性很低,试件内以微裂纹的形成为主,加载至荷载峰值,声发射振铃计数累计值增长呈现平缓阶段,混凝土内微裂缝的聚合会持续一段时间。峰值后荷载迅速降低阶段声发射信号最活跃,为裂缝迅速发展的过程。峰后荷载缓慢降低的过程,声发射信号活跃性降低,裂缝扩展至试件顶部区域,主要是宏观裂缝的开展,不再产生新的裂缝。     

不同厚度CdSe阱层的表面上自组织CdSe量子点的发光性质

利用变温和变激发功率分别研究了不同厚度CdSe阱层的自组织CdSe量子点的发光。稳态变温光谱表明:低温下CdSe量子阱有很强的发光,高温猝灭,而其表面上的量子点发光可持续到室温,原因归结于量子点的三维量子尺寸限制效应;变激发功率光谱表明:量子点激子发光是典型的自由激子发光,且在功率增加时。宽阱层表面上的CdSe量子点有明显的带填充效应。通过比较不同CdSe阱层厚度的样品的发光,发现其表面上量子点的发光差异较大,这可以归结为阱层厚度不同导致应变弛豫的程度不同,直接决定了所形成量子点的大小与空间分布^[1]。     

少周期激光脉冲与气体作用产生的离化电流和THz波辐射

本文通过理论和数值模拟,研究少周期激光脉冲电离气体原子产生的离化电流 以及相应的THz波辐射.研究表明,少周期激光脉冲离化气体后能产生较大的离化电流, 因而可以产生较强的THz辐射.不同的少周期激光脉冲相位导致电离出的 电子初始速度和电离起始时刻不同,从而产生的离化电流有所不同, 辐射的THz波随激光脉冲的相位成周期性变化.该理论得到一维PIC数值模拟的验证. 对于给定的激光脉冲相位,离化电流和THz辐射振幅并没有随入射激光振幅的增加而单调增加, 而是存在一些极值点.与均匀分布气体相比,当气体分布具有一定梯度时, 辐射表现相似的规律,但频谱会发生一定的变化.     

Mechanoluminescence induced by elastic and plastic deformation of coloured alkali halide crystals at fixed strain rates

Mechanoluminescence (ML) emission from coloured alkali halide crystals takes place during their elastic and plastic deformation. The ML emission during the elastic deformation occurs due to the mechanical interaction between dislocation segments and F-centres, and the ML emission during the plastic deformation takes place due to the mechanical interaction between the moving dislocations and F-centres. In the elastic region, the ML intensity increases linearly with the strain or deformation time, and in this case, the saturation region could not be observed because of the beginning of the plastic deformation before the start of the saturation in the ML intensity. In the plastic region, initially the ML intensity also increases linearly with the strain or deformation time, and later on, it attains a saturation value for large deformation. When the deformation is stopped, initially the ML intensity decreases at a fast rate; later on, it decreases at a slow rate. The decay time for the fast decrease of the ML intensity gives the relaxation time of dislocation segments or pinning time of the dislocations, and the decay time of the slow decrease of the ML intensity gives the diffusion time of holes in the crystals. The saturation value of the ML intensity increases linearly with the strain rate and also with the density of F-centres in the crystals. Initially, the saturation value of the ML intensity increases with increasing temperature, and for higher temperatures the ML intensity decreases with increasing temperature. Therefore, the ML intensity is optimum for a particular temperature of the crystals. From the ML measurements, the relaxation time of dislocation segments, pinning time of dislocations, diffusion time of holes and the energy gap between the bottom of the acceptor dislocation band and interacting F-centre level can be determined. Expressions derived for the ML induced by elastic and plastic deformation of coloured alkali halide crystals at fixed strain rates indicates that the ML intensity depends on the strain, strain rate, density of colour centres, size of crystals, temperature, luminescence efficiency, etc. A good agreement is found between the theoretical and experimental results.     

Time-resolved impact ionization in ZnSe high-voltage switches

Fast electrical streamer and glow avalanches in ZnSe semiconductors are investigated, for applications in fast spontaneous or triggered switches. We present time-resolved observations of these self-sustained, impact ionization events in bulk polycrystalline ZnSe at room temperature. Under high voltages (~20 kV) short-current pulse (~3 ns) electrical excitation, the 1 ns risetime current pulses cause the emission of the bandgap radiation, which in turn is used to characterize the role of the plasma during the switching interval. Using a picosecond resolution streak camera, plasma streamers were recorded, in undoped ZnSe, and a uniform glow was observed in n-doped samples for the duration of the 3 ns, 1 kA current pulse. This paper concerns the behavior of the avalanche breakdown mechanism, which is relevant for applications in high energy switches, and we will discuss the possibility of using the avalanche process to pump high-power light-emitting semiconductor devices     

Structural and optical properties of ZnSe thin films stacked with PbSe submonolayers

Structural and optical properties of Zinc Selenide (ZnSe) thin films stacked with multiple Lead Selenide (PbSe) submonolayers (ML) were studied. Thermal evaporation was preferred to produce ZnSe–PbSe thin films with the PbSe ML thickness ranges from 2.5 to 10 nm. Polycrystalline nature of the ZnSe was revealed through high resolution X-ray diffractometer measurement. The development of micro strain at the interfaces with increasing PbSe ML thickness was observed. A cross-sectional TEM image shows well-ordered periodicity and reproducibility of the layer thickness. The enhancement of optical absorption of ZnSe was identified upon stacking of PbSe ML. The evidence for quantum confinement in PbSe ML was revealed by the obtained red shift in band gap (2.5–1.8 eV) values as well as photoluminescence emission at 1,071 nm. The presence of tensile strain in the ZnSe layers upon staking of PbSe ML was discussed by the shift in LO phonon modes in Raman spectra.     

气相外延ZnSe单晶膜的自由激子发光

本文在77K和N2激光器3371谱线高密度激发的VPE ZnSe单晶膜上,首次得到了起因于自由激子与自由激子(Ex-Ex)散射的发光谱带(P带),理论拟合了该谱带的形状并讨论了它的发光特性。文中把在选择的VPE ZnSe外延单晶膜中得到P带的起因归结为这些ZnSe外延单晶膜的质量较高。     

304不锈钢点蚀声发射监测研究

为研究304不锈钢在高于常温条件下的点蚀声发射特性,对70℃下6%氯化铁溶液中304不锈钢点蚀过程进行了声发射监测。采用参数和波形分析相结合的方法处理信号,并通过点蚀形貌观察进行验证。结果表明声发射撞击和能量随时间逐渐增加,在某一时段达到峰值,随后下降并维持平稳状态。信号波形主要由幅度、能量较大的低频段(<100kHz)弯曲波和幅度、能量较小的高频段(>100 kHz)扩展波构成。研究结果对304不锈钢高于常温条件下声发射点蚀监测具有一定意义。      

高强度钢手工焊接后过程的声发射实时监测研究

本针对实际工艺中使用的高强度钢，重点对手工焊接的冷却过程利用声发射技术进行实时监测。本次试验是和先前在不同型号的钢板在手工焊接过程中所产生的声发射信号进行比较的基础上进行的，主要目的是寻找高强度钢在手工焊接的冷却中所产生的活性裂纹在冷却阶段的声信号特征。     

Influence of magnetic field on acoustic emission in dislocation-containing silicon under current loading

The influence of weak (<1 T) magnetic fields on acoustic emission (AE) of dislocation-containing n-Si(111) under current loading j=(1?5)×10⁵ A/m² is investigated. It is found that the combined effect of the magnetic and electric fields leads to an increase in the acoustic emission response by a factor of 1.5 and is responsible for the emergence of an additional peak in the AE spectra at a frequency of 1.7–1.8 Hz. The result is explained by the influence of magnetic fields, which changes the energy state of paramagnetic stoppers. This facilitates the separation and motion of dislocations. Withdrawal of the magnetic field leads to the relaxation of acoustic emission processes, which is determined by the dynamics of excited point centers interacting with a dislocation.     

New mechanism of irradiation creep based on the radiation-induced vacancy emission from dislocations

A new mechanism of irradiation creep is proposed, which is based on the radiation and stress induced difference in emission (RSIDE) of vacancies from dislocations of different orientations with respect to the external stress. This phenomenon is due to the difference in vacancy formation energies, which is proportional to the external stress. The proposed model exhibits similarities with thermal creep models and it is distinct from stress-induced preferential absorption (SIPA) models based on the difference in the long-range interaction of point defects with dislocations. The RSIDE creep rate is essentially temperature independent and is proportional to the dislocation density, stress and irradiation flux. It is inversely proportional to the square of the vacancy formation energy, which is lower than the Frenkel pair formation energy. Experimental verification of the proposed model is discussed on the basis of the measurements of vacancy concentration and creep rate under sub-threshold electron irradiation.