二价金属元素掺杂对LiCoO2体系电子输运性质的影响

为了解释Ca掺杂与Mg掺杂在影响锂离子二次电池正极材料LiCoO2体系电子输运性质方面的不同效应,采用基于密度泛函理论的第一性原理方法研究了该体系的电子结构.计算结果表明,虽然在LiCoO2体系中用Ca或Mg替代Co都会在费米能级附近产生部分占据的受主带,但两者对应的电子态都具有明显的局域化特征;此外,与Mg掺杂体系明显不同的是,Ca掺杂体系的受主带与价带之间存在清晰的带隙.这一带隙的存在正是Ca掺杂不能明显提高LiCoO2体系电导率的主要原因.此外,Ca2+与Mg2+离子半径的较大差别也是造成这两个掺杂体系的电导率存在明显差异的一个重要因素.     

Eu2+, Cr3+共掺杂的MAl12O19 (M=Ca, Sr, Ba) 的发光性质及能量传递

三基色荧光粉中, 红色荧光粉性能较差, 为获得性能优良的红色荧光粉, 本文采用高温固相法合成了Eu²⁺, Cr³⁺单掺杂及共掺杂的碱土金属多铝酸盐MAl₁₂O₁₉ (M =Ca, Sr, Ba) 发光体. 实验表明, 在以上三种基质中均存在Eu²⁺→Cr³⁺的能量传递, 利用能量传递可以有效将Eu²⁺的蓝光或绿光转换为红光. 三种碱土金属多铝酸盐基质的晶体结构相似,但Eu²⁺, Cr³⁺发光受晶体场影响,导致在不同的基质中Eu²⁺, Cr³⁺间能量传递效率不同.通过光谱分析及能量传递效率计算发现, 相同掺杂浓度下,CaAl₁₂O₁₉中Eu²⁺→Cr³⁺的能量传递效率最高,SrAl₁₂O₁₉次之, BaAl₁₂O₁₉最低.红光转换率在CaAl₁₂O₁₉中最高.     

Mn掺杂LiFePO4的第一性原理研究

采用基于密度泛函理论的第一性原理方法, 计算了不同Mn掺杂浓度LiFe_1-xMn_xPO₄ (x=0,0.25,0.50,0.75) 的电子结构. 同时采用流变相辅助高温固相碳热还原法制备了LiFe_1-xMn_xPO₄ (x= 0,0.25,0.50,0.75) 材料. 理论计算表明: LiFePO₄具有E_g = 0.725 eV的带隙宽度, 为半导体材料. 通过Fe位掺杂25%的Mn离子可最大程度地 减小材料带隙宽度、降低Fe---O键及Li---O键键能, 进而提高材料的电子电导率及锂离子扩散速率. 实验结果亦表明, 当Mn掺杂量x=0.25时, 材料具有最优的电化学性能, 其具有约为158 mAh· g^-1的放电比容量以及551 Wh· kg^-1的能量密度. 理论计算与实验结果非常符合.     

Al掺杂的尖晶石型LiMn2O4的结构和电子性质

采用基于密度泛函理论的第一性原理方法, 在广义梯度近似(GGA)和GGA+U方法下对尖晶石型LiMn₂O₄及其Al掺杂 的尖晶石型LiAl_0.125Mn_1.875O₄晶体的结构和电子性质进行了计算. 结果表明: 采用GGA方法得到尖晶石型LiMn₂O₄是立方晶系结构, 其中的Mn离子为+3.5价, 无法解释它的Jahn-Teller 畸变. 给出的LiMn₂O₄能带结构特征也与实验结果不符. 而采用GGA+U方法得到在低温下的LiMn₂O₄和其掺杂 体系LiAl_0.125Mn_1.875O₄的晶体都是正交结构, 与实验一致. 也能明确地确定Mn的两种价态Mn³⁺/Mn⁴⁺的分布并且能够说明Mn³⁺O₆的z方向有明显的Jahn-Teller 畸变, 而Mn⁴⁺O₆则没有畸变. LiMn₂O₄的能带结构与实验比较也能够符合. 采用GGA+U方法对Al掺杂体系的LiAl_0.125Mn_1.875O₄的研究表明, 用Al替换一个Mn不会明显地改变晶体的电子性质, 但可以有效地消除Al³⁺O₆ 八面体的Jahn-Teller畸变, 从而改善正极材料LiMn₂O₄的性能, 这与电化学实验的观察结果相一致.     

Sr2CeO4电荷迁移发光的光谱结构规律研究

利用高温固相反应法分别合成了不同物相形成机理的Sr₂CeO₄，Sr ₂CeO₄∶Ca ²⁺和Sr₂CeO₄∶Ba²⁺样品，并对其光谱特性进行 了研究.结果发现，对于由SrO和CeO₂直接反应生成的Sr₂CeO₄(Ⅰ)，激发主峰位于256nm 左右；而对于SrCeO₃和SrO反应生成的Sr₂CeO₄(Ⅱ)，激发主峰位于279nm左右.在Sr₂CeO₄(Ⅰ)中掺入Ca²⁺，其激发光谱随着Ca²⁺离子浓度的增加逐渐接近于Sr₂CeO_{4(Ⅱ)的激发光谱.激发主峰带应属于CeO6八面体终端Ce⁴⁺—O^2-键的电荷迁移 带.对于激发光谱中340nm左右的弱激发峰，其峰值波长不受形成机理及Ca²⁺掺杂的影响，只是其强度 随着 激发主峰的红移而增加，它可能属于CeO6八面体平面上Ce⁴⁺—O2-键的电荷 迁移带.形成机理及Ca²⁺掺杂对发射光谱没有影响.Ca²⁺在Sr 2CeO 4(Ⅱ)与Ba²⁺在Sr2CeO4(Ⅰ)和(Ⅱ)中均难 于替代Sr²⁺的位置.}     

第一原理研究Sn(O1-xNx)2材料的光电磁性质

基于第一原理的密度泛函理论, 以量子化学从头计算软件 为平台研究了Sn(O_1-xN_x)₂材料的光电磁性能, 分析了体系的态密度、 能带结构、 磁性、 介电虚部及折射率. 计算结果表明, N替代O后, 随着掺杂浓度的增加, 体系的带隙先减小后增大, 掺杂量为12.50%时带隙最窄. 由于N 2p轨道电子的贡献, 在0.55-1.05 eV范围内产生了浅受主能级, 价带和导带处的能级均出现了劈裂及轨道的重叠现象, Sn-O键的键强大于N-O键的键强. 从磁性来看, N原子决定了磁矩的大小. 从介电虚部可知, 掺杂后体系的光学吸收边增宽, 主跃迁峰发生红移, 反射率和介电谱相对应, 各峰值与电子的跃迁吸收有关.     

Nd掺杂对Bi4Ti3O12铁电薄膜的微结构和铁电性能的影响

利用溶胶-凝胶法在Pt/Ti/SiO₂/Si(100)衬底上制备了Nd掺杂Bi₄Ti₃O₁₂(Bi_4-xNd_xTi₃O₁₂, x=0.00,0.30,0.45,0.75,0.85,1.00,1.50)铁电薄膜样品.研究了Nd掺杂对Bi₄Ti₃O₁₂薄膜的微结构和铁电性能的影响.研究结果表明:Nd掺杂未改变Bi₄Ti₃O₁₂薄膜的基本晶体结构.在掺杂量x<0.45时,Nd³⁺只取代类钙钛矿层中的A位Bi³⁺.当x=0.45时,样品剩余极化强度达最大值,在270kV·cm^-1的电场下为32.7μC·cm^-2.掺杂量进一步增加时,结构无序度开始明显增大,Nd³⁺开始进入(Bi₂O₂)²⁺层,削弱其绝缘层和空间电荷库的作用,导致材料剩余极化逐渐下降.当掺杂量x达到1.50时,掺杂离子最终破坏(Bi₂O₂)²⁺层的结构,材料发生铁电-顺电相变.     

Er3+及Er3+/Yb3+掺杂ZrO2-Al2O3的制备及发光性质

采用共沉淀法制备了纳米晶ZrO₂-Al₂O₃∶Er³⁺发光粉体.所制备的粉体室温下具有Er3+离子特征荧光发射,主发射在绿光,其中位于547 nm、560 nm的绿光最强,并得出稀土离子与基质之间有能量传递.对不同煅烧温度下的样品研究表明:因不同温度下所制得的样品晶相不同.研究了纳米晶ZrO2-Al2O3∶Er3+及ZrO₂-Al₂O₃∶Er³⁺/Yb³⁺的上转换发光,并分析了上转换的跃迁机制.发现ZrO₂-Al₂O₃∶Er³⁺的绿光为双光子过程,而ZrO₂-Al₂O₃∶Er³⁺、Yb³⁺的上转换光谱中,红光和绿光也为双光子过程,而极弱的蓝光为三光子过程.讨论了Er³⁺的浓度猝灭现象.最适宜掺杂浓度的原子分数为2%（Er³⁺/Zr⁴⁺）.     

BC5力学性质的第一性原理计算

采用平面波赝势密度泛函理论方法对0—60 GPa静水压下BC₅ 六角晶系P3m1和四方晶系I4m2结构的平衡态晶格常数、弹性常数、各向异性以及泊松比与Cauchy扰动进行了研究. 研究结果表明, BC₅的两种结构在高压下是稳定的, 且不可压缩性随着压强的增加而增大. 另外, 对其电子结构也进行了计算, 计算结果表明, BC₅存在一个较宽的带隙, 两种原子间有较强的共价杂化, 材料的性质主要由B的2p¹和C的2p²态电子共同决定. 压强对材料带隙和费米能级附近的态密度几乎没有影响, 只引起微小的漂移, 可推断其很好的高压稳定性.     

新型光存储材料Sr2SnO4: Tb3+, Li+ 的合成及其红外上转换光激励发光性能的研究

采用高温固相法获得了一种只具有 微弱余辉的新型电子俘获型光存储材料Sr₂SnO₄:Tb^{3 +}, Li ⁺. 发光性能研究结果表明: 该材料对980 nm的红外激光具有很好的上转换光激励信息读出响应, 同时292 nm紫外光为其最佳信息写入光源. 光存储性能研究结果表明: 该材料的浅陷阱较少, 因此其余辉发光很弱, 不到500 s; 另一方面, 该材料中存在大量的深蓄能陷阱. 因此, Sr₂SnO₄: Tb^{3 +}, Li⁺是一种具有较好实际应用价值的新型电子俘获型光存储材料. 此外, 还讨论了Sr₂SnO₄: Tb^{3 +}, Li⁺的光存储发光机理.     

Mg,Al掺杂对LiCoO2体系电子结构影响的第一原理研究

为了研究Mg, Al掺杂对锂二次电池正极材料LiCoO₂体系的电子结构的影响，进而揭示Mg掺杂的LiCoO₂具有高电导率的机理，对Li(Co, Al)O₂和Li(Co, Mg)O₂进行了基于密度泛函理论的第一原理研究. 通过对能带及态密度的分析，发现在Mg掺杂后价带出现电子态空穴，提高了电导，并且通过歧化效应（disproportionation）改变了Co-3d电子在各能级的分布，而Al掺杂则没有这些作用. O关键词： 2')" href="#">LiCoO₂ 电子结构 第一原理 电导     

Effects of acceptor–donor complexes on electronic structure properties in co-doped TiO2: A first-principles study

We theoretically investigate the doping effects induced by impurity complexes on the electronic structures of anatase TiO₂ based on the density functional theory. Mono-doping and co-doping effects are discussed separately. The results show that the impurity doping can make the band-edges shift. The induced defect levels in the band gaps by impurity doping reduce the band gap predominantly. The compensated acceptor–donor pairs in the co-doped TiO₂ will improve the photoelectrochemical activity. From the calculations, it is also found that (S+Zr)-co-doped TiO₂ has the ideal band gap and band edge, at the same time, the binding energy is higher than other systems, so (S+Zr)-co-doping in TiO₂ is more promise in photoelectrochemical experiments.     

Structure, electronic and magnetic properties of Ca-doped chromium oxide studied by the DFT method

Using first-principles density functional theory calculations within the generalised gradient approximation (GGA) as well as GGA+U method we study Ca-doped α-Cr₂O₃ crystal. Structural, electronic and magnetic properties due to the singular impurity incorporation have been investigated and discussed in detail. Atomic shifts as well as computed Bader charges on atoms imply the importance of ionic nature in the atomic interactions in chromium oxide. The study improves our knowledge on how the crystalline lattice reacts on the presence of a Ca dopant. According to our research it is found that Ca impurity incorporation produces some local changes upon the electronic band structure of the material without occurrence of local states within the band-gap. It is found that Ca incorporation produces change in magnetic behaviour of the crystal: it becomes ferromagnetic.     

Electronic structure, x-ray spectra, and magnetic properties of the LiCoO2−δ and NaxCoO2 nonstoichiometric oxides

This paper reports on a study of the magnetic susceptibility, x-ray photoelectron, and x-ray emission spectra of the LiCoO_2?δ and Na_xCoO₂ nonstoichiometric oxides. The valence-band structure of LiCoO₂ was analyzed. The hole concentration in the oxygen 2p band of LiNiO₂ and LiCoO₂ was derived from measurements of the O Kα emission spectra. Measurements of Co 2p and Co 3s photoelectron spectra showed that the Co³⁺ ions reside in the low-spin state with S=0. The deficiency of oxygen in the LiCoO_2?δ reduced oxides gives rise to the formation of divalent cobalt ions. The deficiency of the alkali metal in Na_xCoO₂ initiates the formation of holes in the oxygen 2p band while not changing the electronic configuration d ⁶ of the cobalt-ion ground state.     

Electronic states near fermi level in superconductors La2 − x Sr x CuO4 by means of x-ray absorption spectra near Cu-K and La-L edges

The electronic states of La_{2? x} Sr _x CuO₄ with 0.00 ≤ x ≤ 0.20 are studied by means of X-ray absorption spectroscopy (XANES, EXAFS) near the K-edge of Cu²⁺ ion and the L-edges of La³⁺ ion. It is found that characteristic white lines occurring near L _II and L _III edges of La³⁺ ion show a slight energy shift depending on substituted Sr²⁺ ions, x and temperature. The white lines suggest that unoccupied high-density 5dπ and 5dδ bands of La³⁺ ion just above a Fermi level transform to a hybridized single band of 5dπδ at 78?K in the superconductors with x = 0.10, 0.16 and 0.20. On the other hand, the XANES spectra near the Cu-K edge including a pre-edge region do not depend on x and temperature in the region of 0.00 ≤ x ≤ 0.20. It is considered that there is no reconstruction of electronic states at the Fermi level in a Mott–Hubbard band gap between an O 2p valence band and a Cu 3d conduction band. The electronic states at the Fermi level are probably consisted of the unoccupied 5dπδ band and an empty charge-transfer 3d?⁹ L band at low temperature, bands of which occur in a band gap between a filled O 2p valence band and an unoccupied O 2p conduction band. The insulator–superconductor–metal transitions in La_{2? x} Sr _x CuO₄ are related to the 5dπδ and 3d?⁹ L bands and holes, which site at a top region of the O 2p valence band near the Fermi level produced by a substitution of La³⁺ with Sr²⁺ ions.     

Effect of deformation on the electronic structure and topological properties of the A<Superscript>II</Superscript>Mg<Subscript>2</Subscript>Bi<Subscript>2</Subscript> (A<Superscript>II</Superscript> = Mg,Ca,Sr,Ba) compounds

The electronic structure and topological properties of the A^IIMg₂Bi₂ (A^II = Mg,Ca,Sr,Ba) compounds are theoretically studied with the use of exact exchange. It is found that the Mg₃Bi₂ compound in the equilibrium state is a semimetal, whereas three other compounds are semiconductors with a direct fundamental band gap. It is predicted that the uniaxial deformation of three-component compounds results in transitions to topologically nontrivial phases: topological insulator and topological and Dirac semimetals. Owing to such a rich variety of topologically nontrivial phases, these compounds may be of interest for further theoretical and experimental studies.     

Surface properties of LiCoO2, LiNiO2 and LiNi1−xCoxO2

The surface composition and chemical environment of LiCoO₂, hexagonal LiNiO_2, cubic LiNiO₂, and the mixed transition metal oxide LiNi_0.5Co_0.5O₂ have been determined by Auger electron and X-ray photoelectron spectroscopies. While the LiCoO₂ surface properties can easily be extrapolated from bulk composition, the nickel-containing materials are less straightforward. Their surface concentration tends to be depleted in lithium relative to that of the bulk and shows an atypical chemical environment for the constituent elements. The Ni 2p XPS photoemission suggests a near “ NiO-like” selvedge through the XPS binding energies and satellite structure which are essentially identical to that of NiO; the spectrum appears fairly insensitive to lithium concentration. Although there is little evidence for higher binding energy Ni³⁺ species or for an electron poor Ni^2.δ+-derived band structure in the XPS, the lattice oxygen is very electron-rich and yields among the lowest binding energies reported for a transition metal oxide. The nickel-containing lithium oxide selvedge is thus not simply “NiO” and the surface lithium cations have a measurable effect on the electronic structure even in their more highly depleted levels. This is explained in the context of the charge-transfer model of the oxide band structure.     

Calculations of electronic structure and density of states in?the?wurtzite structure of Zn1? x Mg x O alloys using sp3 semi-empirical tight-binding model

Calculating the electronic structure and the density of states in the wurtzite structure of Zn_1−x Mg _x O (ZMO) alloys using sp³ semi-empirical tight-binding model, we observed increases of both band gap and electron effective mass that agree with the experimental results as increasing Mg composition up to x=0.3. From the calculated total density of states, the increasing electron effective mass is a result of less orbital overlap of cation sites due to extra density of modes coming from Mg3s and Mg3p orbitals as introducing more Mg composition. Additionally, reducing electronegative characteristic of oxygen was caused by that the O2p was less localized around the oxygen atom.     

Hydrostatic pressure driven spin,volume and band gap collapses in SmFeO3: a GGA + U study

The crystal structure, magnetic and electronic properties of SmFeO₃ under hydrostatic pressure have been studied by first-principles calculations within the generalized gradient approximation plus Hubbard U (GGA + U). The iso-structural phase transition with spin, volume and band gap collapses can be induced by a large enough hydrostatic pressure. The high-spin (HS) state of Fe³⁺, with the magnetic moment of ~4 μ_B, is retained at low pressure. The spin crossover occurs at a transition pressure (~68 GPa) with the magnetic moment of Fe³⁺ decreasing to ~1 μ_B in low-spin (LS) state. Meanwhile, the reductions of cell volume (by ~?5.43%) and band gap (from >2 eV to ~1.6 eV) of SmFeO₃ are obtained when the HS–LS transition happens. Finally, the critical pressure of HS–LS transition, magnetic and electronic properties are found to be Hubbard U dependent.     

Electronic structure of the Sr2MgSi2O7:Eu persistent luminescence material

The electronic structures of the distrontium magnesium disilicate (Sr₂MgSi₂O₇(:Eu²⁺)) materials were studied by a combined experimental and theoretical approach. The UV-VUV synchrotron radiation was applied in the experimental study while the electronic structures were investigated theoretically by using the density functional theory. The structure of the valence and conduction bands and the band gap energy of the material as well as the position of the Eu²⁺ 4f ground state were calculated. The calculated band gap energy (6.7 eV) agrees well with the experimental value of 7.1 eV. The valence band consists mainly of the oxygen states and the bottom of the conduction band of the Sr states. The calculated occupied 4f ground state of Eu²⁺ lies in the energy gap of the host though the position depends strongly on the Coulomb repulsion strength. The position of the 4f ground state with respect to the valence and conduction bands is discussed using the theoretical and experimental evidence available.