Weakly bound buffer layer as a template for metallic nano-clusters growth and film laser-patterning

Growth of metallic nano-clusters and control over their size are critically important for catalysis. Development of film patterning procedures at the nanometer scale has significant impact on future lithography. In this work, we present an approach to grow metallic nano-clusters and control their size using a weakly bound buffer layer as an intermediate substance and a template to control the clusters size at the range 1-15 nm.The buffer layer was further employed to create a pattern based on a selective laser ablation procedure. A thicker metallic film deposited on top of pre-patterned buffer layer has been demonstrated as a novel patterning technique at the sub-micron to nanometer scale employing a single laser pulse. The thermal stability of metallic structures prepared this way has been studied at temperature up to 1000 K.     

Enhanced transmission through nano-aperture on a tapered metallic substrate

The optical transmission and distribution through a subwavelength slit on a tapered metallic substrate was investigated. By using a 45° tapered structure rather than a traditional metallic plate, a 6-fold transmission enhancement could be achieved. This is due to the asymmetrical excitation of surface waves and the matching of propagation constants between the surface waves and slit waveguide. In addition, by patterning surface corrugations in the exit plane, the beam could be focused. By tuning the period of the surface corrugations, we were able to adjust the focal length. For an input wavelength of 0.5 μm, the focal point could be kept within 0.6 μm with a focal length extending from 0.5 μm to 2.5 μm and a grating period ranging from 0.5 μm to 0.6 μm.     

Synthesis of nanoporous structures in metallic materials under laser action

We defined conditions of the laser-aided formation of nanoporous structures with nanopores ranging in size from 40 to 50 nm using laser pulses of 10.6 μm wavelength at a pulse-repetition rate of up to (4-5)×10³ Hz for a model metallic material (a two-component alloy “brass of 62%”). It has been established that the exposure to a uniform laser light at depths of up to 25-30 μm results in the formation of nanopores with a relatively uniform distribution across the surface. The resulting pattern contains both solitary pores and ramified porous channels. The nanopores are uniformly distributed within a subgrain, being fairly stable in size and shape. The nanopore size and shape feature larger non-uniformity on the subgrain boundary. The resulting metallic structures show promise for use as catalysts and ultrafiltration membranes.     

Highly nonlinear photonic-crystal fibers for the spectral transformation of Cr: forsterite laser pulses

We demonstrate novel photonic-crystal fibers (PCFs) fabricated of a highly nonlinear glass. Dispersion profiles and nonlinearity of these fibers are tailored with an array of submicron holes in the fiber core. With the PCF structure designed to provide a nonlinearity on the order of 10³ W⁻¹ km⁻¹ at the radiation wavelength of 1 μm and a fundamental-mode dispersion profile with zero group-velocity dispersion around 1.19 μm, unamplified femtosecond Cr: forsterite laser pulses are efficiently frequency-converted into the 540-1000-nm wavelength range through solitonic spectral-transformation mechanisms and four-wave mixing.     

Micromould based laser shock embossing of thin metal sheets for MEMS applications

Laser shock forming is a new material processing technology. Micro-channel with dimension of 260 μm × 59 μm was successfully fabricated on metallic foil surface using laser-generated shock wave. The work piece has a high spatial resolution at the micron-level. A series of experiments was conducted to validate the finite element model. An analysis procedure including dynamic analysis performed by ANSYS/LS-DYNA and static analysis performed by ANSYS is presented in detail to attain the simulation of laser shock embossing to predict the surface deformation. Micromould based laser shock embossing holds promise for achieving precise, well-controlled, low-cost, high efficiency of three-dimensional metallic microstructures. In addition, this technique can fabricate complex 3D microstructures directly by single pulse.     

Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC

Pulsed UV laser drilling can be applied to fabricate vertical electrical interconnects (vias) for AlGaN/GaN high electron mobility transistor devices on single-crystalline silicon carbide (SiC) substrate. Through-wafer micro holes with a diameter of 50-100 μm were formed in 400 μm thick bulk 4H-SiC by a frequency-tripled solid-state laser (355 nm) with a pulse width of ≤30 ns and a focal spot size of ∼15 μm. The impact of laser machining on the material system in the vicinity of micro holes was investigated by means of micro-Raman spectroscopy and transmission electron microscopy. After removing the loosely deposited debris by etching in buffered hydrofluoric acid, a layer of <4 μm resolidified material remains at the side walls of the holes. The thickness of the resolidified layer depends on the vertical distance to the hole entry as observed by scanning electron microscopy. Micro-Raman spectra indicate a change of internal strain due to laser drilling and evidence the formation of nanocrystalline silicon (Si). Microstructure analysis of the vias’ side walls using cross sectional TEM reveals altered degree of crystallinity in SiC. Layers of heavily disturbed SiC, and nanocrystalline Si are formed by laser irradiation. The layers are separated by 50-100 nm thick interface regions. No evidence of extended defects, micro cracking or crystal damage was found beneath the resolidified layer. The precision of UV laser micro ablation of SiC using nanosecond pulses is not limited by laser-induced extended crystal defects.     

Pulsed infrared radiation transmission through chalcogenide glass fibers

Two different kinds of chalcogenide glass IR fibers were evaluated relative to transmission of pulsed IR radiation produced by several laser sources in the wavelength range from 1 to 10 μm. Fibers composed either from As-Se-Te or from As₂S₃ glass, of 250, 500, 750 and 1000 μm and 250, 750 and 1000 μm core diameters were studied, respectively. Attenuation measurements were obtained as a function of the laser energy input and as a function of curvature, wherever this was possible. The output beam quality was also studied using a beam profiler. The lasers used were a Q-switched Nd:YAG laser, emitting at 1.06 μm, a free-running or Q-switched Er:YAG laser emitting at 2.94 μm and a tunable pulsed CO₂ laser emitting in the range of 9.3-10.6 μm. The fibers exhibited better behavior when tested with the Er:YAG laser and they were found fragile in pulsed radiation from the Nd:YAG and the CO₂ laser. The output beam profiles generally showed a central multi-spiking energy distribution.     

Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 μm

A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 μm has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0.16 A/W at the resonance wavelength of 1.55 μm have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested.     

Thin layer laser bonding using spin-on-glass materials

We developed and characterized a new laser bonding process with a nano adhesive layer for transparent materials. The adhesive is spin-coated on a glass substrate and cured locally with a focused laser beam. The minimum viscosity of the adhesive is very low, so that a thin layer only a few hundred nanometers thick can be coated on a cover substrate. Laser irradiation from a Nd:YAG laser system with a wavelength of 1064 nm is employed as the curing source for the localized nano layer bonding process. The measured thickness of the bonding layer is in the range of 400 nm to 3 μm. This process can be applied to the nano or micro bonding of various transparent systems such as flat panel displays, biochips, and heat-sensitive microelectronics. We present experimental results and discuss the process characteristics.     

The photodetector of Ge nanocrystals/Si for 1.55 μm operation deposited by pulsed laser deposition

The photodetector properties of a Ge nanocrystals detector fabricated by pulsed laser deposition and in situ rapid thermal annealing treatment at 600 °C have been studied. Strong optical absorption and photocurrent response of the detector are measured in the wavelength range 1.3-1.55 μm. The detector possesses a low dark current of 61.4 nA and a photocurrent responsivity of 56 mA/W at the reverse bias 5 V. The external quantum efficiency at 1.55 μm is estimated to be 15%. The stop wavelength of absorption spectra extends to 1.65 μm. It indicates that these kind of Ge nanocrystals devices can be used as a 1.3-1.55 μm near infrared detector.     

High-power 3.8 μm tunable optical parametric oscillator based on PPMgO:CLN

The experimental results of a high-power 3.8 μm tunable laser are presented on a quasi-phase-matched single-resonated optical parametric oscillator in PPMgO:CLN pumped by a 1064 nm laser of an elliptical beam. Theoretical analyses of the PPMgO:CLN wavelength tuning are presented. The pump source was an acousto-optical Q-switched cw-diode-side-pumped Nd:YAG laser. The beam polarization matched the e-ee interaction in PPMgO:CLN. When the crystal was operated at 90 °C and the pump power was 150 W with a repetition rate of 10 kHz, average output power of 22.6 W at 3.86 μm and 63 W at 1.47 μm was obtained. The slope efficiency of the 3.86 μm laser with respect to the pump laser was 17.8%. The M² factors of the 3.86 μm laser were 1.74 and 4.86 in the parallel and perpendicular directions, respectively. The mid-IR wavelength tunability of 3.7-3.9 μm can be achieved by adjusting the temperature of a 29.2 μm period PPMgO:CLN crystal from 200 °C to 30 °C, which basically is accorded with the theoretic calculation.     

Semiconductor optical amplifier based swept wavelength source at 1060 nm using a scanning Fabry-Perot filter and an YDFA-based booster amplifier

We demonstrate a tuneable laser operating in the 1-1.1 μm wavelength region with a tuning range of 43 nm (FWHM), an output power of 19 mW and coherence length of 14 mm. The source is based on a master laser consisting of a cavity tuned ring configuration with a fibre Fabry-Perot filter used as a tuning element and a semiconductor amplifier as gain medium. The output of the master laser is subsequently power boosted using an Ytterbium doped fibre amplifier (YDFA). In addition to providing a power boost, we demonstrate that by tailoring the gain spectrum of the YDFA it is possible to increase the FWHM scanning range by 7 nm compared to that of the master laser.     

Experiments of all-optical switching due to cross-phase modulation in fiber grating coupler by lock-in amp. detection scheme

We report results of experiments examining cross-phase modulation effect on fiber grating coupler (FGC). All-optical switching are observed in both cases of high pump pulses emitted from high-power Nd:YAG laser and mode-locked EDF laser. Based on coherent detection using a lock-in amplifier, the red-shift of the Bragg wavelength for a FGC was estimated to be 0.04-0.06 nm/1.5-1.7 kW peak power of EDF pump light at 1.55 μm. To avoid mixture of pump pulse and signal light at 1.55 μm, we have also performed the experiment using high power Nd:YAG laser as a pump power. For a Nd:YAG laser, the red-shift of Bragg wavelength is estimated to be 0.06 nm at maximum pump power of 2.1 kW. A simple model for the proposed detection scheme is given and the resultant red-shift is analyzed numerically.     

Physical bounds of metallic nanofingers obtained by mechano-chemical atomic force microscope nanolithography

To obtain metallic nanofingers applicable in surface acoustic wave (SAW) sensors, a mechano-chemical atomic force microscope (AFM) nanolithography on a metallic thin film (50 nm in thickness)/piezoelectric substrate covered by a spin-coated polymeric mask layer (50-60 nm in thickness) was implemented. The effective shape of cross-section of the before and after etching grooves have been determined by using the AFM tip deconvolution surface analysis, structure factor, and power spectral density analyses. The wet-etching process improved the shape and aspect ratio (height/width) of the grooves and also smoothed the surface within them. We have shown that the relaxed surface tension of the polymeric mask layer resulted in a down limitation in width and length of the lithographed nanofingers. The surface tension of the mask layer can be changed by altering the initial concentration of the polymer in the deposition process. As the surface tension reduced, the down limitation decreased. In fact, an extrapolation of the analyzed statistical data has indicated that by decreasing the surface tension from 39 to 10 nN/nm, the minimum obtainable width and length of the metallic nanofingers was changed from about 55 nm and 2 μm to 15 nm and 0.44 μm, respectively. Using the extrapolation’s results, we have shown that the future SAW sensors buildable by this nanolithography method possess a practical bound in their synchronous frequency (∼58 GHz), mass sensitivity (∼6125 MHz-mm²/ng), and the limit of mass resolution (∼4.88 × 10⁻¹⁰ ng/mm²).     

Supercontinuum generation in square photonic crystal fiber with nearly zero ultra-flattened chromatic dispersion and fabrication tolerance analysis

This paper presents a simple index-guiding square photonic crystal fiber (SPCF) where the core is surrounded by air holes with two different diameters. The proposed design is simulated through an efficient full-vector modal solver based on the finite difference method with anisotropic perfectly matched layers absorbing boundary condition. The nearly zero ultra-flattened dispersion SPCF with low confinement loss, small effective area as well as broadband supercontinuum (SC) spectra is targeted. Numerical results show that the designed SPCF has been achieved at a nearly zero ultra-flattened dispersion of 0 ± 0.25 ps/(nm·km) in a wavelength range of 1.38 μm to 1.89 μm (510 nm band) which covers E, S, C, L and U communication bands, a low confinement loss of less than 10⁻⁷ dB/m in a wavelength range of 1.3 μm to 2.0 μm and a wide SC spectrum (FWHM = 450 nm) by using picosecond pulses at a center wavelength of 1.55 μm. We then analyze the sensitivity of chromatic dispersion to small variations from the optimum value of specific structural parameters. The proposed index-guiding SPCF can be applicable in supercontinuum generation (SCG) covering such diverse fields as spectroscopy applications and telecommunication dense wavelength division multiplexing (DWDM) sources.     

Low-pump-threshold tunable optical parametric oscillator using periodically poled MgO:LiNbO3

We fabricated and characterized periodically poled MgO:LiNbO₃ device with five gratings in 0.5 μm increments from 29 μm to 31 μm for optical parametric oscillator (OPO). The OPO operation threshold is 30 μJ using this device with a 50 mm effective length. At 560 mW input pump power, we have achieved 300 mW of the total output power, and the conversion efficiency is 54%. Multi-periods and temperatures tuning of the OPO yields a signal wavelength range from 1.45 to 1.72 μm and an idler wavelength range from 2.8 to 4.05 μm in the mid infrared.     

Ion beam etching of high resolution structures in Ta2O5 for grating-assisted directional coupler applications

An investigation on thin Ta₂O₅ films patterning using argon ion beam etching (IBE) is presented. The etch rates are characterised by varying the angle of incidence of the beam onto the substrate. Ta₂O₅ gratings with a period of 2.2 μm (1.1 μm linewidth) and 0.25 μm thickness are fabricated using an angle of incidence of 0°. The resulting Ta₂O₅ grating cross sectional profiles are analysed using AFM and SEM imaging. A fabrication method is thus demonstrated which could be used to implement wavelength selective gratings in applications such as grating-assisted directional couplers (GADCs).     

Widely phase-matched tunable difference-frequency generation in periodically poled LiNbO3 crystal

We report on the development of a laser source in the mid-infrared spectral region based on difference-frequency generation (DFG) in a periodically poled LiNbO₃ (PPLN) crystal. Continuously tunable coherent radiation from 2.75 to 4.78 μm was produced by optical parametric interaction between a diode-pumped monolithic continuous-wave (CW) Nd:YAG laser operating at 1.064 μm and a CW Ti:Sapphire laser tunable from 767 to 871 nm. Temperature-dependent quasi-phase-matched DFG wavelength acceptance bandwidth was studied and characterized. An empiric formula is given to estimate the phase-matched wavelength acceptance bandwidth as a function of the crystal temperature at Λ = 22.5 μm. A large frequency scan of 128 cm⁻¹ (about 78 cm⁻¹ above 1 μW) near 4.2 μm was achieved. The whole absorption spectrum of the P and R branches of the ν₃ band of atmospheric carbon dioxide has been recorded with a single phase-matched frequency scan.     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.     

Effect of plasma confinement on laser shock microforming of thin metal sheets

Laser shock forming is conceived as a non-thermal laser forming method of thin metal sheets using the shock wave induced by laser irradiation to modify the target curvature. The plastic deformation induced by the shock wave and the direct plasma pressure applied on the material generate a residual stress distribution in the material finally leading to its bending. Using water as a confinement medium for the plasma the pressure can be increased around 10 times and the final deformation has a dramatic increase.The effect can be made clearly apparent in thin specimens (up to 1 mm). In the present study thin (100 μm) stainless steel (AISI 316) strips (1 mm long and 300 μm wide) in single and double pinned configurations have been investigated.A Nd:YAG Laser (1064 nm) with 10 ns of pulse length (FWHM) and an energy of 21 mJ per pulse is focused in the strip (spot diameter of the spot = 500 μm).Experimental and numerical studies of the influence of plasma confinement in the process and number of applied pulses are presented.The study shows that the final bending of the specimens can be controlled on a relative wide range by a stable quasi-proportional relation to the number of applied pulses and, what is considered as of major importance, that plasma confinement increases the generated pressure and thus the bending in the target.Laser shock microforming in confined configuration is considered as a technique allowing the successful processing of components in a medium range of miniaturization.