Diffusion of single adatom Cu on Cu (0 0 1) and (1 1 0) surfaces

With static relaxation, the surface diffusion activation energies of a single Cu adatom migrated by both atomic exchange and hopping mechanisms and the forces acted on the diffusing adatom from other atoms of Cu (0 0 1) or (1 1 0) surface are calculated by using the MAEAM. When adatom migrated on Cu (0 0 1) or (1 1 0) surface, the increment curves of the system energy by hopping mechanism are symmetrical and the saddle points are in the midpoints of the migration path, but the ones by the exchange mechanism are dissymmetrical and the saddle points are always close to the initial hole positions of the adatom and away from the initial equilibrium positions of the exchanged atom. From minimization of both the diffusion activation energy and the force acted on the diffusing adatom from other atoms, we found that, on Cu (0 0 1) surface the favorable diffusion mechanism is hopping mechanism, however, on Cu (1 1 0) surface, hopping via long bridge is easier than the exchange mechanism but the hopping via short bridge is more difficult than the exchange mechanism.     

Systematical study of dimer diffusion on metal fcc(0 0 1) surfaces

We study systematically the dimer diffusion on a series of metal fcc(0 0 1) surfaces. The atomic interactions are modeled by the realistic model potentials including embedded-atom method potential, surface-embedded-atom method potential, and Rosato-Guillopé-Legrand potential. Based on the results of the static calculations and the molecular dynamics simulations, three different kinds of fcc(0 0 1) surfaces can be distinguished named hard, middle, and soft. On the different kind of surfaces, not only the dominant diffusion mechanism but also the physical model for exchange mechanism is different. In addition, besides the conventional hopping and exchange mechanisms, some other interesting diffusion mechanisms for dimers are observed in our molecular dynamics simulations such as exchange rotation mechanism, cooperative hopping mechanism, and cooperative exchange mechanism.     

Diffusions of small clusters on Pt(1 1 1) and Cu(1 1 1) surfaces

Diffusions of small cluster Pt₆ on Pt(1 1 1) surface and Cu₆ on Cu(1 1 1) are studied by molecular dynamics simulation, respectively. The atomic interaction is modeled by the semiempirical potential. The results show that the diffusion processes in the two systems are far different. For example, on Pt(1 1 1) surface, the hopping of single atom and the shearing of two atoms of hexamer only occur on the adatom(s) adsorbed at B-step, while on Cu(1 1 1) surface they can appear on the adatom(s) either at A-step or B-step. To the concerted translation of the parallelogram hexamer, the anisotropy in the diffusion path is observed in the two systems, the mechanisms and then the preferential paths, however, are completely different. The reasons for these diffusion characteristics and differences are discussed.     

Growth of nano-crystalline metal dots on the Si(1 1 1)-7 × 7 surface saturated with C2H5OH

Metal atom on the Si(1 1 1)-7 × 7 surface undergoes migration by hopping among Si-adatom and Si-rest atom. If the hopping migration is prohibited, how change the deposited metals? In this paper, we studied the deposition of metals on the Si(1 1 1)-7 × 7 surface saturated with C₂H₅OH, on which the whole Si-rest atoms are changed to Si-H so that the hoping migration of metals will be prohibited. We found the growth of ca. 5 nm of crystalline dots by the deposition of Sn, Zn and Ag. Interestingly, Ag dots undergo layer-by-layer growth so that the surface is covered with 5 nm size dots with uniform height. When the hopping migration is prohibited, growth of dots is controlled by the kinetics of precursor state atoms instead of the lattice energy relating to lattice matching or strain.     

Surface diffusion of carbon atom and carbon dimer on Si(0 0 1) surface

Carbon (C) atom and carbon dimer (C2) are known to be the main projectiles in the deposition of diamond-like carbon (DLC) films. The adsorption and diffusion of the C adatom and addimer (C2) on the fully relaxed Si(0 0 1)-(2 × 1) surface was studied by a combination of the molecular dynamics (MD) and Monte Carlo (MC) simulation. The adsorption sites of the C and C2 on the surface and the potential barriers between these sites were first determined using the semi-empirical many-body Brenner and Tersoff potential. We then estimated their hopping rates and traced their pathways. It is found that the diffusion of both C and C2 is strongly anisotropic in nature. In addition, the C adatom can diffuse a long distance on the surface while the adsorbed C2 is more likely to be confined in a local region. Thus we can expect that smoother films will be formed on the Si(0 0 1) surface with single C atoms as projectile at moderate temperature, while with C2 the films will grow in two-dimensional islands. In addition, relatively higher kinetic energy of the projectile, say, a few tens of eV, is needed to grow DLC films of higher quality. This is consistent with experimental findings.     

Theoretical study of Ni adsorption on the GaN(0 0 0 1) surface

First-principles pseudo-potential calculations within density-functional theory framework are performed in order to study the structural and electronic properties of nickel adsorption and diffusion on a GaN(0 0 0 1)-2×2 surface. The adsorption energies and potential energy surfaces are investigated for a Ni adatom on the Ga-terminated (0 0 0 1) surface of GaN. This surface is also used to study the effect of the nickel surface coverage. The results show that the most stable positions of a Ni adatom on GaN(0 0 0 1) are at the H₃ sites and T₄ sites, for low and high Ni coverage respectively. In addition, confirming previous experimental results, we have found that the growth of Ni monolayers on the GaN(0 0 0 1) surface is possible.     

First principles calculations of the adsorption and diffusion of Y on the Si(0 0 1)-c(4 × 2) surface

We have studied the adsorption and diffusion of yttrium on the Si(0 0 1)-c(4 × 2) surface in the early stages of growth. Our first principles total energy calculations are based on the density functional theory as implemented in the SIESTA code. The exchange and correlation energies are treated within the generalized gradient approximation according to the Perdew, Burke and Ernzerhof parametrization. Our results demonstrate that the most favorable adsorption site is in the trench between two silicon dimer rows, identified as valley-bridge (V). Our studies show that the diffusion of an Y adatom on Si(0 0 1)-c(4 × 2) surface presents an anisotropic behavior. We found two values for the barriers along the valley (0.54 and 1.07 eV) and one of 1.24 eV in the perpendicular direction, showing that diffusion along the valley is more probable. The analysis of the Mulliken overlap populations shows that the bonding between an Y adatom and the surface is partially covalent. Two Y atoms on the surface do not form dimers instead they are adsorbed as adatoms.     

Density functional theory study of hydrogenation mechanism in Fe-doped Mg(0 0 0 1) surface

Using density functional theory (DFT) in combination with nudged elastic band (NEB) method, the dissociative chemisorptions and diffusion processes of hydrogen on both pure and Fe-doped Mg(0 0 0 1) surfaces are studied. Firstly, the dissociation pathway of H₂ and the relative barrier were investigated. The calculated dissociation barrier (1.08 eV) of hydrogen molecule on a pure Mg(0 0 0 1) surface is in good agreement with comparable experimental and theoretical studies. For the Fe-doped Mg(0 0 0 1) surface, the activated barrier decreases to 0.101 eV due to the strong interaction between the s orbital of H and the d orbital of Fe. Then, the diffusion processes of atomic hydrogen on pure and Fe-doped Mg(0 0 0 1) are presented. The obtained diffusion barrier to the first subsurface is 0.45 eV and 0.98 eV, respectively. Finally, Chou method was used to investigate the hydrogen sorption kinetic mechanism of pure MgH₂ and Mg mixed with 5 at.% Fe atoms composites. The obtained activation energies are 0.87 ± 0.02 and 0.31 ± 0.01 eV for H₂ dissociation on the pure surface and H atom diffusion in Fe-doped Mg surfaces, respectively. It suggests that the rate-controlling step is dissociation of H₂ on the pure Mg surface while it is diffusion of H atom in the Fe-doped Mg surface. And both of fitting data are matching well with our calculation results.     

Study of arsenic for antimony exchange at the Sb-stabilized GaSb(0 0 1) surface

In this paper we present a first-principle study on the energetics of a single As₂ molecule on GaSb(0 0 1) reconstructed surface. In order to shed light into the mechanisms of anion exchange at the Sb-rich GaSb(0 0 1) surface, we studied firstly As₂ adsorption and then As for Sb exchange. We identify a surface region where both the processes are energetically favored. The results of this twofold analysis can be combined to derive possible reaction paths for the anion exchange process.     

Structural stabilities and diffusion of small Fe clusters on Fe (1 1 0) surface: A molecular dynamics study

Using Embedded-atom-method (EAM) potential of iron, structural stabilities of small Fe clusters on a Fe (1 1 0) surface have been investigated by molecular dynamics studies. It is presented that a tetramer and heptamer clusters are more stable than other sizes. These two clusters have high transition energies. They can be a critical nucleus at low and high temperature, respectively. A dimer diffuses more easily with lower energy barrier than single adatom. The trimer's rotation and dimer shearing mechanisms have been investigated in this paper.