共查询到19条相似文献,搜索用时 125 毫秒
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利用分子动力学模拟方法详细研究了低能Pt原子与Pt(111)表面的相互作用所导致的表面吸附原子、溅射原子、表面空位的产生及分布规律,给出了表面吸附原子产额、溅射原子产额和表面空位产额随入射Pt原子能量的变化关系.模拟结果显示:溅射产额、表面吸附原子产额和表面空位产额随入射原子的能量的增加而增加,溅射原子、表面吸附原子的分布花样呈3度旋转对称性质;当入射粒子能量高于溅射阈值时,表面吸附原子主要是基体最表面原子的贡献,入射粒子直接成为表面吸附原子的概率很小.其主要原因是:当入射粒子能量高于溅射能量阈值时,入射
关键词:
分子动力学
低能粒子
表面原子产额
空位缺陷
溅射 相似文献
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本文主要介绍了入射离子能量为64和67MeV时,12C+197Au反应中出射的α粒子的能谱和角分布,以及能量为71.5MeV时该反应中出射的α、Be和B等粒子的能谱和角分布。给出了6Li粒子的产额和使用α-α粒子符合技术,在相对于东流方向成90°处测得的反应中出射的8Be分裂开的α粒子的能谱和产额。反应中出射的各种粒子的最可几能量,随着入射离子能量的降低而降低,角分布都是大约在擦边角附近出现峰值,当入射离子能量从71.5MeV降到64MeV时,其峰位大约从80°移到120°,显示出转移反应的特征。我们对实验结果作了一些简要的分析讨论。 相似文献
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本文先应用分子动力学模拟BaTiO3体系在初级击出原子(primary knock-on atom, PKA)轰击下缺陷产生和复合的动力学过程, 模拟结果表明:PKA的方向和能量对缺陷数目有重要影响, 并计算了Ba, O和Ti原子的平均位移阈能分别为69 eV, 51 eV和123 eV, 远大于SRIM程序默认的位移阈能25 eV. 然后应用蒙特卡罗软件包SRIM, 模拟质子在BaTiO3薄膜中的能量损失过程, 比较位移阈能对模拟结果的影响, 分析质子能量和入射角度对空位数量以及分布的影响. 结果表明空位数量随着质子能量增加而增加, 增加的速率随能量的增加是降低的;当入射角度大于60°, 空位数量随入射角增大而明显减少. 相似文献
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在入射能量E为40和100MeV/u时,对112Sn+112Sn和124Sn+124Sn两个反应系统在不同碰撞参数下进行了同位旋相关的量子分子动力学模型计算,系统研究了阻塞率、线性动量转移、荷电粒子多重性、轻荷电粒子多重性、中子多重性以及束缚核总电荷Zbound随碰撞参数的变化规律,结果表明,中子多重性对碰撞参数的依赖在两个能量下都存在着明显的同位旋效应,Zbound在E为40MeV/u时存在着同位旋效应.同时讨论了在较低和较高能量时如何更合理地确定反应事件的碰撞参数. 相似文献
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H. H. Andersen 《辐射效应与固体损伤》2013,168(3-4):179-186
Abstract Earlier measurements of sputtering efficiency of polycrystalline targets (fraction of impinging ion energy leaving the target through sputtering and backscattering) have been extended to higher energies. Lead and copper targets were bombarded with several different projectiles with energies between 80 and 1200 keV. The sputtering efficiency decreases with increasing energy. This decrease is ascribed to the combined influence of changes in the scattering cross section with energy, and to electronic stopping. The results may be described as a function of the mass ratio M 2/M 1 and the reduced energy ? only. The sputtering efficiency was measured as a function of angle of incidence of the bombarding ions. To ensure complete collection of sputtered and backscattered particles, it was possible to cover only the region of incidence angle from 0° to 45°. Targets of copper, silver, and lead were investigated with 17 different ion-target combinations. The sputtering efficiency increased with angle of incidence. This increase is described well by a simple interpolation formula by Sigmund. 相似文献
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Two modifications of Sigmund's sputtering formula, viz. by Bohdansky and by Yamamura et al. are compared with an α-adaptation of Sigmund's original formula to 620 experimental sputtering yields taken from literature. Using the α-values for the comparison, it was found that the considerable scatter of these values (averaged for given M1, Z1, M2, Z2) is not reduced by either of the two modifications, except for values in the range M2/M1 > 100. In each of the three versions the scatter is systematic, however, in as far as certain target elements yield average values of α which are consistently high, low or intermediate over a wide range of M2/M1 ratios. 相似文献
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Molecular dynamics simulations of the 20-keV C60 bombardment at normal incidence of Si, SiC, diamond and graphite targets were performed. The unique feature of these targets is that strong covalent bonds can be formed between carbon atoms from the C60 projectile and atoms in the solid material. The mesoscale energy deposition footprint (MEDF) model is used to gain physical insight into how the sputtering yields depend on the substrate characteristics. A large proportion of the carbon atoms from the C60 projectile are implanted into the lattice structure of the target. The sputtering yield from SiC is ∼twice that from either diamond or Si and this can be explained by both the region of the energized cylindrical tract created by the impact and the number density. On graphite, the yield of sputtered atoms is negligible because the open lattice allows the cluster to deposit its energy deep within the solid. The simulations suggest that build up of carbon with a graphite-like structure would reduce any sputtering from a solid with C60+ bombardment. 相似文献
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The energy distribution and yields of the α-particles emitted in the thermal-neutron fission of 235U were measured with the same detector system for the cases when the average angles between fragments and α-particles were 90°, 46°, 27° and 11°. The data were analysed by the Monte Carlo method to take into account the effects of the finite size of the source and the various detectors, and the following results were obtained: (i) Even at small angles with respect to the fission axis the yield of the α-particles is about 2–3 % of the yield at 90°, and does not go to zero as would be expected for a true Gaussian angular distribution of a variance which fits the data around 90°. (ii) At these angles where most of the α-particle yield belongs to the non-Gaussian component, the α-particle energy distribution has a significantly higher most probable energy but the FWHM of the energy distribution is not significantly different, (iii) The rms width σθ of the Gaussian angular distribution is found to increase for very high (Eα > 20 MeV) α-particle energies and also to a lesser extent for very low (Eα < 15 MeV) energies. The origin of the yield of the α-particles at small angles, and the dependence of the rms width σθ on the energy are discussed. 相似文献
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I.L. Bolotin 《Applied Surface Science》2006,252(19):6533-6536
A quartz crystal microbalance (QCM) has been used to determine total-mass sputtering yields of PMMA films by 1-16 keV C60+,2+ ion beams. Quantitative sputtering yields for PMMA are presented as mass loss per incident ion Ym. Mass-lost rate QCM data show that a 13 keV C60 cluster leads to emission equivalent to 800 PMMA molecules per ion. The power law obtained for the increase in sputtering yield with primary ion energy is in good agreement those predicted by “thermal spike” regime and MD models, when crater sizes are used to estimate sputtering. 相似文献
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The sputtering yield angular distributions have been calculated on the basis of the ion energy dependence of total sputtering yields for Ni and Mo targets bombarded by low-energy Hg+ ions. The calculated curves show excellent agreement with the corresponding Wehner's experimental results of sputtering yield angular distributions. This fact clearly demonstrates the intrinsic relation between the ion energy dependence of total sputtering yields and the sputtering yield angular distribution. This intrinsic relation had been ignored in Yamamura's papers [Yamamura, Y. (1982). Theory of sputtering and comparison to experimental data, Nucl. Instr. and Meth., 194, 515–522; Yamamura, Y. (1981). Contribution of anisotropic velocity distribution of recoil atoms to sputtering yields and angular distributions of sputtered atoms, Rad. Eff., 55, 49–55.] due to some obvious mistakes. 相似文献
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R. Behrisch G. Maderlechner B. M. U. Scherzer M. T. Robinson 《Applied Physics A: Materials Science & Processing》1979,18(4):391-398
The computer simulation program MARLOWE which follows the trajectories of energetic ions and recoiling target atoms in solids
has been used to calculate sputtering yields for low energy (0.1–10keV) light ions (H, D, T,4He). Recoil energy densities were calculated for comparison with analytical theories. The sputtering yields obtained for amorphous
Fe agree within a factor of two with experimentally measured values for polycrystalline stainless steel, while the calculated
yields for protons on amorphous molybdenum are more than twice the experimental values on polycrystalline material. The calculations
show that in the parameter range investigated, ions backscattered in the solid contribute a major part to sputtering. This
result confirms earlier calculations of the threshold energy for sputtering which are in agreement with recent measurements.
Operated for the United States Department of Energy by the Union Carbide Corporation. 相似文献
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Lukas Pietzonka Thomas Lautenschläger Daniel Spemann Annemarie Finzel Jürgen W. Gerlach Frank Frost Carsten Bundesmann 《The European Physical Journal B - Condensed Matter and Complex Systems》2018,91(10):252
TiO2 thin films were grown by ion beam sputter deposition (IBSD) using oxygen ions, with the ion energy and geometrical parameters (ion incidence angle, polar emission angle, and scattering angle) being varied systematically. Metallic Ti and ceramic TiO2 served as target materials. The thin films were characterized concerning thickness, growth rate, surface topography, structural properties, mass density, and optical properties. It was found that the scattering geometry has the main impact on the film properties. Target material, ion energy, and ion incidence angle have only a marginal influence. Former studies on reactive IBSD of TiO2 using Ar and Xe ions reported equivalent patterns. Nevertheless, the respective ion species distinctively affects the film properties. For instance, mass density and the refractive index of the TiO2 thin films are remarkably lower for sputtering with oxygen ions than for sputtering with Ar or Xe ions. The variations in the thin film properties are tentatively attributed to the angular and the energy distribution of the film-forming particles, especially, to those of the backscattered primary particles. 相似文献