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我们首次计算了正方形样品和传感器间隙的影响在磁光图像实验中的大部分区域可以忽略,但在扫描霍耳探针实验中不可忽略.完全穿透磁场也不可能在扫描霍耳探针实验中观测到 相似文献
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通过变磁场霍耳测量研究了MBE生长的Hg0 .80 Mg0 .2 0 Te薄膜在 1 5— 2 5 0K温度范围内的输运特性 .采用迁移率谱 (MS)和多载流子拟合过程 (MCF)相结合的方法对实验数据进行了分析 ,由该方法获得的结果和ShubnikovdeHass(SdH)振荡测量的结果都证明材料中存在二维 (2D)电子和三维 (3D)电子 .其中 2D电子主要来自于Hg1-xMgxTe CdTe的界面积累层或Hg1-xMgxTe与真空界面附近的积累层 .3D电子迁移率随温度的变化关系表明了Hg1-xMgxTe中的电子散射机理与Hg1-xCdxTe中的非常相似 :在低温下电离杂质散射 (考虑了屏蔽效应 )起主导地位 ,而温度在 10 0K以上时 ,晶格散射占主导地位 . 相似文献
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通过变磁场霍耳测量研究了MBE生长的Hg0.80Mg0.20Te薄膜在15 —250K温度范围内的输运特性.采用迁移率谱(MS)和多载流子拟合过程(MCF)相结合的方法对 实验数据进行了分析,由该方法获得的结果和Shubnikov de Hass(SdH)振荡测量的结果都证 明材料中存在二维(2D)电子和三维(3D)电子.其中2D电子主要来自于Hg1-xMgxTe-CdTe的界面积累层或Hg1-x 关键词:
变磁场霍耳测量
界面积累层
二维电子气
1-xMgxTe')" href="#">Hg1-xMgxTe 相似文献
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Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates 下载免费PDF全文
Graphene with different surface morphologies were fabricated on 8° -off-axis and on-axis 4H-SiC(0001) substrates by high-temperature thermal decompositions. Graphene grown on Si-terminated 8° -off-axis 4H-SiC(0001) shows lower Hall mobility than the counterpart of on-axis SiC substrates. The terrace width is not responsible for the different electron mobility of graphene grown on different substrates, as the terrace width is much larger than the mean free path of the electrons. The electron mobility of graphene remains unchanged with an increasing terrace width on Siterminated on-axis SiC. Interface scattering and short-range scattering are the main factors affecting the mobility of epitaxial graphene. After the optimization of the growth process, the Hall mobility of the graphene reaches 1770 cm 2 /V·s at a carrier density of 9.8.×10 12 cm 2 . Wafer-size graphene was successfully achieved with an excellent double-layer thickness uniformity of 89.7% on a 3-inch SiC substrate. 相似文献
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半导体材料的纵光学声子与等离子体激元耦合模(LOPC模)能够提供材料电学方面的相关信息。本文在室温下测得了n型4H-和6H-SiC的拉曼光谱,分析了掺入的杂质对于SiC晶体拉曼光谱的影响,通过拟合n型4H-和6H-SiC晶体的LOPC模的线型得到等离子体频率,并由此从理论上计算了载流子浓度。载流子浓度的理论计算值与霍尔测量的结果符合得很好。研究结果进一步证实了对于n型4H-和6H-SiC晶体,可以通过分析LOPC模的线形来较准确地给出相关材料的载流子浓度。 相似文献
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用分子束外延技术将高灵敏度的InAs/AlSb量子阱结构的Hall器件赝配生长在GaAs衬底上。设计了由双δ掺杂构成的Hall器件的新结构,有效地提高了器件的面电子浓度。与传统的没有掺杂的InAs/AlSb量子阱结构的Hall器件相比,室温下器件电子迁移率从15 000 cm2·V-1·s-1 提高到16 000 cm2·V-1·s-1。AFM测试表明材料有好的表面形态和结晶质量。从77 K 到300 K对Hall器件进行霍尔测试,结果显示器件不同温度范围有不同散射机构。双δ掺杂结构形成高灵敏度、高二维电子气(2DEG)浓度的InAs/AlSb异质结Hall器件具有广阔的应用前景。 相似文献
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以洛伦兹变换方法为基础,分析了阳极层霍尔等离子体加速器中电子的霍尔漂移,结果表明在交叉场中,霍尔漂移并不总是存在的,E/B的比值大于光速时,霍尔漂移将不存在.进一步的分析表明,霍尔漂移也并不总是回旋形式的,不同的电磁场配置以及不同的电子初始能量将带来不同形式的漂移,包括回旋形式,波浪线形式,甚至直线形式.电磁场的配置也决定着霍尔漂移的速度,在很大程度上影响着电子的能量,这就决定了放电时的电离效率.对不同电磁场配置进行数值模拟发现,合理的电磁场比值能够得到更好的电离效率(对于氩,这个数值大约为4×106).不同的气体,根据其电离碰撞截面与电子能量的关系,都有不同的合理比值. 相似文献
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提出了一种SiC反型层表面粗糙散射的指数模型,并对6H-SiC反型层迁移率进行了单电子的Monte Carlo模拟,模拟中考虑了沟道区的量子化效应.模拟结果表明,采用表面粗糙散射的指数模型能够使SiC反型层迁移率的模拟结果和实验值符合得更好.模拟结果还反映出有效横向电场较高时表面粗糙散射的作用会变得更显著,电子的屏蔽效应降低了粗糙散射对沟道迁移率的影响,温度升高会引起沟道迁移率降低.
关键词:
6H-SiC
反型层迁移率
表面粗糙散射
指数模型 相似文献
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A. I. Arbab 《中国物理 B》2012,(12):444-450
<正>We have applied Maxwell’s equations to study the physics of quantum Hall’s effect.The electromagnetic properties of this system are obtained.The Hall’s voltage,VH = 2πh2ns/em,where ns is the electron number density,for a 2- dimensional system,and h = 2πh is the Planck’s constant,is found to coincide with the voltage drop across the quantum capacitor.Consideration of the cyclotronic motion of electrons is found to give rise to Hall’s resistance. Ohmic resistances in the horizontal and vertical directions have been found to exist before equilibrium state is reached. At a fundamental level,the Hall’s effect is found to be equivalent to a resonant LCR circuit with LH = 2πm/e2ns and CH = me2/2πh2ns satisfying the resonance condition with resonant frequency equal to the inverse of the scattering (relaxation) time,τs.The Hall’s resistance is found to be RH =((LH)/CH)1/2.The Hall’s resistance may be connected with the impedance that the electron wave experiences when it propagates in the 2-dimensional gas. 相似文献
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We calculate localization corrections to the anomalous Hall conductivity in the framework of side-jump and skew scattering mechanisms. In contrast to the ordinary Hall effect, there exists a nonvanishing localization correction to the anomalous Hall resistivity. The correction to the anomalous Hall conductivity vanishes in case of side-jump mechanism, but is nonzero for the skew scattering. 相似文献
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Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) dc transport data reported for eight bulk-crystal and six oriented-film specimens of YBa2Cu3O7?δ, and (ii) far-infrared Hall angle data reported for YBa2Cu3O7?δ and Bi2Sr2CaCu2O8+δ. The electron band exhibits extremely strong scattering; the extrapolated dc residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole–electron analysis of Hall angle data suggests that the electrons possess the greater effective mass. 相似文献