集成门极换流晶闸管电学模型的优化及参数提取

在集成门极换流晶闸管(IGCT) 2T-3R-C 电学模型的基础上,针对其模型关断电压出现与实测波形不 符的振荡问题,建立了一种 IGCT 改进电学模型,并提出一套可用于改进电学模型的参数提取方法,给出改进电 学模型电路结构和器件参数。将模型的动态特性仿真结果与 4kA/4.5kV 型号 IGCT 的 4kA/4.5kV 等级实验结果、 3.5kA/4.5kV 等级实验结果以及现有 2T-3R-C 模型仿真结果进行对比,验证了改进电学模型的准确性、适用性、 优越性。      

光子晶体中四能级系统的量子相干效应

研究了处于光子带隙材料中的四能级原子系统的电磁感应透明、自发辐射和光子开关效应，分析了其稳态与瞬态特性, 发现特殊的模密度能够导致反常的吸收、色散、自发辐射及瞬态无反转增益, 并可以通过外加调制场进行控制.详细讨论了特殊频率处模密度的变化对透明窗口和光子开关效应的影响. 关键词： 光子带隙材料 电磁感应透明 模密度 光子开关     

超高速脉冲晶闸管设计及特性

介绍一种超高速脉冲半导体器件,该器件属于穿通型器件,电压可达到5000V,电流上升率可以达到20kA/μs以上,根据参数调配,脉冲峰值电流可以达到数百kA。该器件采用多元胞集成结构,采用缓冲层与阳极透明层相结合的扩散技术,使其在压降和开通等方面相对于传统的晶闸管原理开关有更强的优势。并且,该超高速脉冲器件在工艺设计及实现上进行了优化,使生产条件易满足。     

PPCP用固态脉冲电源的实验研究

 介绍了一种采用半导体开关与磁开关、可饱和脉冲变压器相结合技术的固态脉冲电源，此电源可用于脉冲放电等离子体烟气治理。在理论分析的基础上建立了实验模型，通过实验验证了此类电源的可行性，解决了8支晶闸管开关串联的动静态均压及开通同步性问题，并对可饱和脉冲变压器及磁开关的工作特性进行了分析计算。电源在阻性负载上得到峰值电压37.5 kV、前沿101 ns、脉宽1 μs的脉冲，重复频率300 Hz，输出功率10 kW。     

高电压大电流晶闸管组件的热特性

晶闸管具有控制特性好、寿命长、噪声小等优点,目前在脉冲功率技术应用中,利用大功率晶闸管代替传统气体开关是研究趋势。晶闸管在高电压、大电流、重复频率工作条件下使用,需要对开关组件进行仔细的选型和组合。基于晶闸管的失效机理,对晶闸管组件在高电压、大电流、高di/dt,高du/dt、重复频率工作下的发热问题进行了理论分析、仿真计算和试验研究,对晶闸管组件在重复频率脉冲功率系统中的使用条件给出了理论依据。随着晶闸管工作电压、电流、频率增大,晶闸管的热损耗也越大,晶闸管的发热也越严重。为保证晶闸管安全稳定地工作,需要结温保持在安全范围内,不能长时间在重复频率下工作。     

石墨烯超材料等离诱导透明特性和光电开关设计

基于单层图案化石墨烯超材料在太赫兹波段实现了等离子诱导透明效应，利用耦合模式理论（CMT）分析了等离子诱导透明产生的机理，得到的理论结果与时域有限差分方法计算的结果高度一致。通过调节石墨烯费米能级对等离子诱导透明特性进行了动态调控，并实现了多模同步异步开关的设计，在2.16、3.01、3.84 THz三个频率处的振幅调制度分别为95.77%、83.42%、95.58%，消光比最高可达13.73 dB。对慢光效应的研究结果表明群折射率可达180。本研究为设计光电子器件提供方案和指导。     

晶闸管串联开关及同步触发系统研制

为满足脉冲功率源对高电压、大电流开关的需求,利用传统晶闸管均压技术,将多个晶闸管串联,研制出额定电压10kV,额定电流500A的晶闸管串联开关。根据晶闸管的触发原理,设计出同步触发多个晶闸管的触发系统。该触发系统采用绝缘栅双极型晶体管开关对直流电压阻断产生脉宽可调的低压脉冲,经多个隔离脉冲变压器升压,产生多路同步触发信号。对晶闸管触发系统及晶闸管串联开关进行了测试,测试结果表明:晶闸管触发系统可输出20V,1A的多路同步触发信号,触发信号的脉宽30~60μs可调,重复频率100Hz;晶闸管串联开关每路静态均压和动态均压波动小,在高电压条件下能稳定工作。     

电感贮能的“开关-阻容”换流线路

本文研究了采用电感贮能作为环流-Ⅰ装置的欧姆加热电源。提出了“开关-容阻”换流线路,并对“开关-容阻”换流线路进行了分析。最后,结合环流-Ⅰ装置的欧姆加热要求进行了供电系统的方案计算。     

多色矢量高斯-谢尔模型光束的焦移和焦开关

从交叉谱密度矩阵的传输公式出发，对多色矢量高斯-谢尔模型（GSM）光束的焦移和焦开关作了详细的研究.插入偏振片之前，多色矢量高斯-谢尔模型（GSM）光束通过硬边光阑透镜分离光学系统后，有焦移，但无焦开关；而插入偏振片之后，会出现焦开关.改变偏振片的旋转角度可以控制焦开关的特性.     

激光电源脉冲功率切换电路仿真分析

激光电源脉冲功率切换电路稳定工作是电源可靠性的保证。电路参数选取直接影响晶闸管、二极管的工况,而晶闸管的良好工况是保证切换激光电源长期可靠运行的基本条件。基于PSCAD软件建立切换电路的仿真模型,重点仿真分析了阻容电路参数配置、限流电阻、并联晶闸管触发同步性对晶闸管和二极管的影响。仿真结果表明,电流上升率过大是晶闸管门极损坏的原因,关断支路中的反向过压是二极管损坏的原因。并针对实际电路,提出晶闸管二极管保护的优化配置方案。     

铜掺杂氧化锌薄膜阻变特性的研究

以 ZnO：Al为底电极,Cu为顶电极,在同种工艺条件下分别制备了类电容结构的纯ZnO 阻变器件和ZnO：2%Cu阻变器件,分析比较了两种器件的典型I-V特性曲线、置位电压（V_Set）和复位电压（V_Reset）的分布范围、器件的耐久性。结果显示,ZnO：Cu阻变器件较纯ZnO阻变器件有更大的开关比和更稳定的循环性能。另外,研究了 ZnO：Cu阻变器件的阻变机理,通过对其I-V特性曲线分析得出以下结论：ZnO：Cu阻变器件在高阻态遵循空间电荷限制电流效应,低阻态符合欧姆定律。     

Flexible and transparent resistive switching devices using Au nanoparticles decorated reduced graphene oxide in polyvinyl alcohol matrix

We have investigated the resistive switching mechanism in solution processed Au-reduced graphene oxide-polyvinyl alcohol (PVA) nanocomposites on flexible substrates. Monodispersed gold nanoparticles (Au NPs) attached to reduced graphene oxide (RGO) in aqueous PVA solution have been synthesized using a novel one pot technique. The fabricated hybrid device showed high On/Off switching ratio more than 10³ with low operating voltages. The performance of hybrid device can be effectively enhanced over control RGO device. The switching mechanism occurs from the electrochemical reduction/oxidation process of partially reduced graphene oxide. The proposed devices reveal superior asymmetric bipolar resistive switching characteristics attractive for solution processable flexible and transparent non-volatile memory applications.     

High-voltage microwave-triggered switches

The operation of three types of experimental high voltage microwave-triggered switches developed by the University of St. Andrews and DRA Malvern is described. The POLOTRON and the microwave-triggered three-gap-switch (MTGS) are closing switches and the microwave-triggered tacitron, (MITTON) is a closing and opening switch. The switches are robust hydrogen thyratron type devices, with an annular geometry, where closure is achieved using microwave fields to ionize the low pressure gas within the switch. In the case of the MITTON, the switch is opened by the application of a negative bias voltage to a large area metal grid. The POLOTRON is designed for fast switching applications. Its annular geometry results in an inherent low inductance and anode fall-times of less than 3 ns have been measured for a cold-cathode POLOTRON at charging voltages up to 30 kV. The MTGS, also a cold cathode switch, was developed for use in the DUOTRON transient generator (a voltage doubler). Output voltages of up to 16 kV have been measured at repetition rates of 90 Hz. The MITTON has closing characteristics similar to the POLOTRON and anode voltage fall-times of less than 10 ns have been measured at voltages up to 16 kV. Opening times of 0.5 μs have been achieved with an anode voltage of 10 kV and current of 10 A     

Effects of moisture barriers on resistive switching in Pt-dispersed SiO2 nanometallic thin films

Moisture invasion into memory devices can result in data loss and malfunctions in write/erase switching. Deteriorated uniformity and retention characteristics, and distorted switching hysteresis loops, are observed in moisture-attacked Pt-dispersed SiO₂ nanometallic thin-film devices, and can be effectively prevented by coating the device with a nanoscale Al₂O₃ barrier layer grown by an atomic layer deposition method. The moisture-attacked devices exhibit evidence of cumulating ion current and ion potential with repeated switching. In contrast, a capped device with an extremely uniform and reproducible resistive switching behavior features a completely symmetric current–voltage curve expected for a purely electronic device.     

Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

We report that fully transparent resistive random access memory(TRRAM) devices based on ITO/TiO2/ITO sandwich structure,which are prepared by the method of RF magnetron sputtering,exhibit excellent switching stability.In the visible region(400-800 nm in wavelength) the TRRAM device has a transmittance of more than 80%.The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage,while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability.The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO 2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.     

Effect of the anchoring groups on the switching behaviour of the dihydroazulene/vinylheptafulvene molecular junction with zigzag-edged graphene nanoribbons electrodes

The switching behaviour of dihydroazulene/vinylheptafulvene molecule with different anchoring groups sandwiched between two zigzag-edged graphene nanoribbons (ZGNRs) electrodes is investigated by applying nonequilibrium Green's function formalism combined with first-principles density functional theory. The calculated results show that the anchoring groups play a significant role in determining the electronic transport properties and switching behaviour of the molecular junctions. A higher current switching ratio without any oscillation can be obtained for the molecular junctions with carbon atom anchoring group, which suggests that this system has a broader application in future logic and memory devices.     

Resistance switching in transparent magnetic MgO films

We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which affects the mobile carriers. The results presented in this paper suggest that MgO transparent films combining ferromagnetism and multilevel switching characteristics might pave the way for a new method for spintronic multibit data storage.     

Perspectives on the electrically induced properties of electrospun cellulose/liquid crystal devices

A mat of electrospun cellulose fibers are deposed on transparent conductive oxide covered glass, and two such plates enclose a nematic liquid crystal. Thus two new types of Cellulose based Polymer Dispersed Liquid Crystal devices, based on hydroxypropylcellulose and Cellulose Acetate and the nematic liquid crystal E7 have been obtained. The current–voltage characteristics indicates ionic type conduction. Heating–cooling cycles have been applied on the samples and the activation energies have been determined. Simultaneously with the thermo-stimulated currents, the optical transmission dependence on the d.c. electric field and temperature was registered. ON–OFF switching times have been determined for different control voltages.     

针-板和针-水电极大气压直流辉光放电的光谱特性

利用光谱学方法,对针-水电极和针-板电极直流辉光放电特性进行了比较研究。结果发现两种装置产生的放电都有明显的分区现象, 从阴极到阳极分别为负辉区、阴极暗区、正柱区和阳极辉区。针-板电极放电中可以清晰地观测到阳极暗区, 而针-水电极放电阳极暗区不明显。对比两种放电的伏安特性曲线,发现放电电压均随电流增大而减小,但相同电流下针-水电极间的电压大于针-板电极间的电压。由于伏安特性具有负斜率,且放电电流密度介于10-5～10-4 A·cm-2,说明两种装置中的放电均处于正常辉光放电阶段。在正常辉光放电的范围内比较两种放电的发射光谱, 发现发射光谱中都包含N₂的第二正带系(含波长为337.1 nm的谱线)和N+₂的第一负带系(含波长为391.4 nm的谱线),但相对强度不同。利用光谱学方法对放电发射谱的谱线强度比I_391.4／I_337.1和振动温度进行了空间分辨测量,发现相同位置处针-水电极放电的谱线强度比要比针-板电极放电的大,并且相同位置处针-水电极放电的振动温度高。