三维自组装Eu3+-石墨烯复合材料的制备及其磁性研究

采用一锅水热法在180 ℃ 下制备三维Eu³⁺-石墨烯自组装复合材料. 通过X射线衍射、 扫描电子显微镜、透射电子显微镜表征了合成样品的物相及形貌特征. 结果表明: 合成的样品具有多孔性结构, 层与层之间堆叠成三维结构, 并且结果显示产物中没有Eu³⁺的团聚体. 经过拉曼光谱, 傅里叶红外光谱分析表明, Eu³⁺通过含氧官能团与石墨烯复合. 通过振动样品磁强计测定样品的磁滞回线, 对其磁学性能进行研究, 剥离顺磁信号后, 测得相应的矫顽力H_c ≈ 39.61 Oe(1 Oe=79.5775 A/m), 饱和磁化强度M_s ≈ 0.08 emu/g, 发现该产物具有弱的铁磁性, 与石墨烯相比, Eu³⁺的加入使得产物的铁磁性有较大提高. 关键词： 三维石墨烯 3+')" href="#">Eu³⁺ 水热法 磁性     

磁性多层膜CoFeB/Ni的垂直磁各向异性研究

应用磁控溅射法在玻璃基片上制备了以Pt为底层的CoFeB/Ni多层膜结构样品,通过测试样品的反常霍尔效应研究多层膜的垂直磁各向异性(perpendicular magnetic anisotropy,PMA),对影响多层膜垂直磁各向异性的各因素进行了调制.实验结果表明,多层膜的底层厚度、周期层中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要影响.通过对样品各参数的逐步调制,最终获得了具有良好PMA的CoFeB/Ni多层膜最佳样品Pt(4)/[CoFeB(0.4)/Ni(0.3)]_3/Pt(1.0).经测试计算,该样品的各向异性常数K_(eff)为2.2×10~6erg/cm~3(1 erg/cm~3=10~(-1)J/m~3),具有良好的PMA性能,样品总厚度为7.1 nm,完全满足制备垂直磁结构材料的厚度要求,可进一步研究其在器件中的集成与应用.     

1064nm纳秒激光对石墨烯的损伤效应研究

通过化学气相沉积法制备,并转移到基片得到1~3层石墨烯样品。利用霍尔效应及微区拉曼光谱测量,结合光学显微镜观察,分析了不同层数石墨烯在1064nm纳秒激光辐照下的损伤特性。实验发现1~3层石墨烯的激光损伤阈值依次降低,分别为:单层0.45J/cm2,2层0.34J/cm2,3层0.23J/cm2。激光强度超过阈值时,石墨烯薄膜电阻增大,载流子迁移率降低。通过光学显微镜观察发现局部区域破损,破损区域的拉曼光谱中1580cm-1左右的G峰和2700cm-1左右的2D峰高度比发生变化。实验结果表明1064nm纳秒激光辐照石墨烯主要为剥离作用。     

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3(0.62PMN-0.38PT)单晶的折射率,给出了该温度下折射率色散的Sellmeier方程.研究了能带结构与折射率的关系,计算了样品的Sellmeier光学系数:对no,E0=5.50eV,λ0=0.226μm,S0=1.004×1014m-2,Ed=28.10eV;对ne,E0=5.57eV,λ0=0.223μm,S0=1.017×1014m-2,Ed=28.10eV.ABO3型钙钛矿材料中,BO6八面体基元决定了晶体的能带结构,对折射率产生重要影响.     

边界对石墨烯量子点非线性光学性质的影响

石墨烯作为一种新型非线性光学材料,在光子学领域具有重要的应用前景,引起研究人员的极大兴趣.本文运用量子化学计算方法研究了边界引入碳碳双键(C=C)和掺杂环硼氮烷(B₃N₃)环对石墨烯量子点非线性光学性质和紫外-可见吸收光谱的影响.研究发现,扶手椅边界上引入C=C双键后,六角形石墨烯量子点分子结构对称性降低,电荷分布对称性发生破缺,导致分子二阶非线性光学活性增强.石墨烯量子点在从扶手椅型边界向锯齿型边界过渡的过程中,随着边界C=C双键数目的增加,六角形石墨烯量子点和B3N3掺杂六角形石墨烯量子点的极化率和第二超极化率分别呈线性增加.此外,边界对石墨烯量子点的吸收光谱也有重要影响.无论是石墨烯量子点还是B₃N₃掺杂石墨烯量子点,扶手椅型边界上引入C=C双键导致最高占据分子轨道能级升高,最低未占分子轨道能级的降低,前线分子轨道能级差减小,因而最大吸收波长发生了红移.中心掺杂B₃N₃环后会增大石墨烯量子点的分子前线轨道能级差,导致B3N3掺杂后的石墨烯量子点紫外-可见吸收光谱发生蓝移.本文研究为边界修饰调控石墨烯量子点非线性光学响应提供了一定的理论指导.     

高性能石墨烯霍尔传感器

本文回顾了石墨烯霍尔传感器的相关研究工作.通过改善石墨烯生长转移和霍尔元件的微加工工艺,石墨烯霍尔元件和霍尔集成电路都展示出超越传统霍尔传感器的优异性能.石墨烯霍尔元件的灵敏度、分辨率、线性度和温度稳定性等重要指标都优于传统商用霍尔元件.通过开发一套钝化工艺,霍尔元件的稳定性有了明显提升.结合石墨烯材料的特点,展示了石墨烯在柔性磁传感和多功能传感领域的新颖应用.此外,成功实现了石墨烯/硅互补型金属-氧化物-半导体(CMOS)混合霍尔集成电路,并进行了应用展示.通过发展一套低温加工工艺(不超过180℃),将石墨烯霍尔元件制备在硅基CMOS芯片的钝化层上,从而与硅基CMOS电路实现了单片集成.本文的研究结果表明石墨烯在霍尔磁探测方向拥有重大的性能优势,在产业化应用中有巨大发展潜力.     

水声无源材料插入损失虚拟聚焦测量方法

提出了一种适合在有限尺寸水池中测量水声材料插入损失的方法,称为"虚拟聚焦法"。该方法利用一弧形发射阵以一定规则对样品进行扫描,通过对接收数据进行叠加处理,使得同频声干扰贡献随机化和无规则化,从而提取出反映材料声参数的透射波信号。在尺寸为5.5 m×3.5 m×3.5 m的非消声水池,测量频率为2~15 kHz,对1.1 m×1 m×8 mm标准铝板样品和1 m×1 m×35 mm聚氨酯材料样品进行了测量,结果表明测量值与理论值有较好的吻合,测量不确定度为2.0 dB(k=2)。      

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg_1/3Nb_2/3)O_{3< /sub>-0.38PbTiO3( 0.62PMN-0.38PT)单晶的折射率，给出了该温度下折射率色散的Sellmeier方程.研究了能带 结构与折射率的关系，计算了样品的Sellmeier光学系数：对no，E0=5.50eV,λ0=0.2 26μm，Ｓ０=1.004×10¹⁴m^-2，Ed=28.1 0eV；对ne，Ｅ0=5.57eV,λ 0=0.223μm，S0=1.017×10¹⁴m^-2，Ed=28.10eV.A BO3型钙钛矿材料中，BO6八面体基元决定了晶体的能带结构，对折 射率产生重要影响. 关键词： PMNT单晶 折射率 Sellmeier光学系数}     

用水热法合成掺杂Pr~(3+)的NiPr_xFe_(2-x)O_4纳米颗粒及其表征

采用水热法制备了掺杂Pr3+的NiPrx Fe2-x O4(x=0.0,0.01,0.025,0.05,0.075,0.1,0.15)纳米颗粒.实验结果表明制备的样品是立方体结构的纳米颗粒,当掺杂量为0x≤0.1时Pr3+能成功掺杂到NiFe2O4尖晶石晶格内,但掺杂量x0.1(x=0.15)时会出现杂峰.随着掺杂量从0增加到0.1,样品的平均晶粒尺寸从47nm减小到18nm,饱和磁化强度从55A·m2/kg单调减小至37A·m2/kg,矫顽力从4.7×103 A/m减小到3.4×103 A/m.饱和磁化强度减少的原因主要是由于室温下无磁性的Pr3+代替NiFe2O4中的Fe3+造成的.     

表面预处理对石墨烯上范德瓦耳斯外延生长GaN材料的影响

基于范德瓦耳斯外延生长的氮化镓/石墨烯材料异质生长界面仅靠较弱的范德瓦耳斯力束缚,具有低位错、易剥离等优势,近年来引起了人们的广泛关注.采用NH_3/H_2混合气体对石墨烯表面进行预处理,研究了不同NH_3/H_2比对石墨烯表面形貌、拉曼散射的影响,探讨了石墨烯在NH_3和H_2混合气氛下的表面预处理机制,最后在石墨烯上外延生长了1.6μm厚的GaN薄膜材料.实验结果表明:石墨烯中褶皱处的C原子更容易与气体发生刻蚀反应,刻蚀方向沿着褶皱进行;适当NH_3/H_2比的混合气体对石墨烯进行表面预处理可有效改善石墨烯上GaN材料的晶体质量.本研究提供了一种可有效提高GaN晶体质量的石墨烯表面预处理方法,可为进一步研究二维材料上高质量的GaN外延生长提供参考.     

Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC （0001） wafers

Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H–SiC substrate. The effects of graphitization temperature on the thickness and surface morphology of epitaxial graphene are investigated. X-ray photoelectron spectroscopy spectra and atomic force microscopy images reveal that the epitaxial graphene thickness increases and the epitaxial graphene roughness decreases with the increase in graphitization temperature. This means that the thickness and roughness of epitaxial graphene films can be modulated by varying the graphitization temperature. In addition, the electrical properties of epitaxial graphene film are also investigated by Hall effect measurement.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

Temperature dependent electron transport in graphene

We have investigated the electron transport in graphene at different carrier densities. Single layer graphene was fabricated into Hall bar shaped devices by mechanical extraction onto a silicon oxide/silicon substrate followed by standard microfabrication techniques. From magnetoresistance and Hall measurements, we measure the carrier density and mobility at different gate voltages. Different temperature dependent resistivity behaviors are found in samples with high and low mobilities.     

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates

Graphene with different surface morphologies were fabricated on 8° -off-axis and on-axis 4H-SiC(0001) substrates by high-temperature thermal decompositions. Graphene grown on Si-terminated 8° -off-axis 4H-SiC(0001) shows lower Hall mobility than the counterpart of on-axis SiC substrates. The terrace width is not responsible for the different electron mobility of graphene grown on different substrates, as the terrace width is much larger than the mean free path of the electrons. The electron mobility of graphene remains unchanged with an increasing terrace width on Siterminated on-axis SiC. Interface scattering and short-range scattering are the main factors affecting the mobility of epitaxial graphene. After the optimization of the growth process, the Hall mobility of the graphene reaches 1770 cm 2 /V·s at a carrier density of 9.8.×10 12 cm 2 . Wafer-size graphene was successfully achieved with an excellent double-layer thickness uniformity of 89.7% on a 3-inch SiC substrate.     

High spatial resolution ellipsometer for characterization of epitaxial graphene

An ellipsometer with 3μm×5μm spot size constructed with a single focusing and imaging element is used to measure the layer number of exfoliated graphene on glass and expitaxial graphene on SiC. Ellipsometric sensitivity to graphene layer number increases with decreasing layer number and decreasing substrate refractive index. Single-atomic-layer sensitivity has been achieved. High spatial resolution imaging and ellipsometry is useful for rapid characterization of epitaxially grown graphene films.     

Some peculiarities of magnetoresistance and Hall resistance of Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> nanoplates

Antimony telluride (Sb₂Te₃) nanoplates of various thickness were grown by the vapor phase deposition method. The Hall resistance and magnetoresistance of the samples were measured in magnetic fields up to 9 T at temperatures from 2 to 300 K. Temperature dependence of the magnetoresistance and Hall resistance of the nanoplates shows a strong dependence on the thickness of the samples. Relatively thick samples show a nonlinear dependence of the Hall resistance on magnetic field. The measurement data are analyzed within the model of multi-channel transport. The difference in behavior is attributed to the existence of two channels of charge transfer with high and low mobility.     

Fractional quantum Hall States of Dirac electrons in graphene

We have investigated the fractional quantum Hall states of Dirac electrons in a graphene layer in different Landau levels. The relativistic nature of the energy dispersion relation of electrons in graphene significantly modifies the interelectron interactions. This results in a specific dependence of the ground state energy and the energy gaps for electrons on the Landau-level index. For the valley-polarized states, i.e., at nu=1/m, m being an odd integer, the energy gaps have the largest values in the n=1 Landau level. For the valley-unpolarized states, e.g., for the 2/3 state, the energy gaps are suppressed for n=1 as compared to those at n=0. For both n=1 and n=0, the ground state of the 2/3 system is fully valley-unpolarized.     

Measurement of the ν=1/3 fractional quantum hall energy gap in suspended graphene

We report on magnetotransport measurements of multiterminal suspended graphene devices. Fully developed integer quantum Hall states appear in magnetic fields as low as 2 T. At higher fields the formation of longitudinal resistance minima and transverse resistance plateaus are seen corresponding to fractional quantum Hall states, most strongly for ν=1/3. By measuring the temperature dependence of these resistance minima, the energy gap for the 1/3 fractional state in graphene is determined to be at ～20 K at 14 T.