Optical waveguide with homogeneous refractive index profile in LiNbO3 by double-low-energy Oxygen ion implantation

We report on the formation of the planar waveguide by 550 keV O ion followed by 250 keV O ion implantation in lithium niobate (LiNbO₃), at fluences of 6 × 10¹⁴ ions/cm² and 3 × 10¹⁴ ions/cm², respectively. The Rutherford backscattering/channeling spectra have shown the atomic displacements in the damage region before and after annealing. A broad and nearly homogeneous damage layer has been formed by double-energy ion implantation after annealing. Both the dark mode spectra and the data of refractive index profile verified that the extraordinary refractive index was enhanced in the ion implanted region of LiNbO₃. A homogeneous near-field intensity profile was obtained by double-low-energy ion implantation. There is a reasonable agreement between the simulated modal intensity profile and the experimental data. The estimated propagation loss is about 0.5 dB/cm.     

Characterization of optical planar waveguide in Ce:KNSBN crystal formed by triple-energy helium ion implantation

We report on the optical planar waveguide formation and modal characterization in a Ce:KNSBN crystal by triple helium ion implantation at energies of (2.0, 2.2 and 2.4 MeV) and fluences of (1.5, 1.65 and 2.25) × 10¹⁵ cm⁻². The prism-coupling method is used to investigate the dark-line spectroscopy at wavelength of 632.8 and 1539 nm, respectively. The refractive index profiles of the waveguide are reconstructed by an effective refractive index method. It is found that the ion-beam irradiation creates slight increase of extraordinary index whilst decreases ordinary one in the guide region. The modal analysis shows, at wavelength of 632.8 nm, the fields of one TE and three TM modes are well restricted in the guiding region, which means the formation of non-leaky waveguide in the crystal. The damping coefficients of the waveguide are 0.6 and 1.6 cm⁻¹ for ordinary and extraordinary polarized light at 632.8 nm, respectively.     

Photorefractive properties of optical waveguides in Fe:LiNbO<Subscript>3</Subscript> crystals produced by O<Superscript>3+</Superscript> ion implantation

The photorefractive properties of optical planar waveguides in Fe:LiNbO₃ crystals fabricated by O³⁺ ion implantation are investigated. Two-wave mixing experiments are carried out for both the waveguide and the bulk. The results show that the measured gain coefficients are almost identical for the waveguiding layer and the substrate. In the waveguide, the response time could be reduced by one order of magnitude, with respect to the bulk, at the same power level of the incident light.     

Monomode channel waveguide in KTiOPO4 crystal produced by Rb+ ion exchange combined with Si+ ion implantation

A novel ion exchanged channel KTiOPO₄ waveguide formation technique is introduced, which can avoid a metal mask being dissolved in an ion exchanged molten salt. Rb⁺ ion exchange (340°C, 30 min) was first applied to a KTP sample to produce a planar waveguide substrate, and then Si⁺ ion implantation (3.0 MeV and 1.5 MeV with doses of 1×10¹⁵ ions/cm² and 6×10¹⁴ ions/cm², respectively) was carried out to construct channel stripes on the planar waveguide surface that has been deposited by a specially designed photoresist mask. The two-dimensional cross sectional refractive index profile of the channel waveguide was reconstructed by considering the shape of the channel waveguide as well as the index distribution of the planar waveguide.     

Optical Waveguide Formed in RbTiOPO4 Crystal by 6.0 MeV O^3＋ Implantation

A planar optical waveguide was formed in RbTiOP04 crystal by 6.0-MeV oxygen ion implantation with the dose of 2 × 10^15 ions/cm2 at room temperature. Annealing at 200℃ for 30min in air is performed to improve the thermal stability of the waveguide. The dark modes of the waveguide are measured at wavelengths 633 and 1539 nm, respectively. The refractive index profiles in the guiding layer are reconstructed by using the reflectivity calculation method. TRIM＇98 code was carried out to simulate the damage profiles caused by the implantation process to obtain a better understanding of the waveguide formation.     

Characterization of optical waveguide in Nd: GdVO4 by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd: GdVO₄ crystals by triple oxygen ion implantation at energies of (2.4, 3.0, and 3.6 MeV) and fluences of (1.4, 1.4, and 3.1)  × 10¹⁴ions/cm². The prism-coupling method is used to investigate the dark-mode property at wavelength of 632.8 nm. The refractive index profiles of the waveguide are reconstructed by an effective refractive index, n_eff method. The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which means the formation of nonleaky waveguide in the crystal.     

Reconstruction of extraordinary refractive index profile of O ion-implanted LiNbO3 single-mode channel waveguide based on beam propagation method and image processing

A method bases on beam propagation method and image processing is brought forward to reconstruct the extraordinary refractive index profile of the ion-implanted single-mode channel waveguide in lithium niobate. Channel waveguide is formed by O²⁺ ion implantation at three energies of (3.0, 3.6 and 4.5 MeV) and respective doses of (1.8, 2.2 and 4.8) × 10¹⁴ ions/cm² in vacuum at room temperature. Only one enhanced-index mode is observed for extraordinary light at 1539 nm by prism-coupling method. TRIM’98 code is used to simulate the damage profile in channel waveguide. The modes pattern of TE and TM are measured by use of end-face coupling method.     

The optical properties of planar waveguides in LiB3O5 crystals formed by Cu implantation

A planar optical waveguide has been formed in a LiB₃O₅ crystal using 6.0 MeV Cu⁺-ions with a dose of 1 × 10¹⁵ ions/cm² at room temperature. Possible propagating modes were measured at a wavelength of 633 nm using the prism-coupling method. The refractive index profiles of the waveguide were reconstructed by an effective refractive index method and the beam propagation method was used to investigate the properties of the propagation modes in the formed waveguide. The results suggest that the fundamental TE₀ and TM₀ modes may be well-confined and propagate a longer distance inside the waveguide. The implantation process was also simulated using the transport of ions in matter code (TRIM), which indicates that the nuclear energy deposition may be the main factor for the refractive index change.     

Characterization of laser waveguides in Nd:CNGG crystals formed by low fluence carbon ion implantation

We report on Nd:CNGG active planar waveguides produced by 6.0 MeV carbon ion implantation at fluence from 1 × 10¹⁴ ions/cm² to 8 × 10¹⁴ ions/cm². The refractive index profiles, which were reconstructed according to the measured dark mode spectroscopy, showed that the refractive indices had negative changes in the surface region, forming typical barrier waveguide. The width of waveguide structure induced by carbon ion implantation is ∼3.8 μm. The typical barrier-shaped distribution may be mainly due to the nuclear energy deposition of the incident ions into the substrate. By performing a modal analysis on the observed TE modes, it was found that the TE₀ and TE₁ modes can be well-confined inside the waveguide.     

Experimental observation and numerical simulation of guided modes in Nd:YLiF4 channel waveguides produced by carbon ion implantation

We report on, to our knowledge the first time, the channel waveguide formation in Nd:YLiF₄ laser crystal produced by 6 MeV carbon ion implantation. The guided modes are observed by using an end‐face arrangement. We construct the two‐dimensional (2D) refractive index profile of the channel waveguide cross section, which is based on the related planar waveguide index distribution as well as the rectangular shape of the waveguide cross sections. The modal intensity distribution is numerically calculated by using the beam propagation method according to the reconstructed index profile, which shows a reasonable agreement with the experimental result. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical waveguides in LiNbO3 formed by ion implantation

Abstract

Ion implantation in LiNbO₃ can be used to modify the refractive index. The change in indices, n ₀ n _e results from the damage formed by energy deposited by the (dE/dx)_nuclear collisions between the ions and the lattice and is independent of the ion species. A saturation change in index of some ?7% occurs after a deposition of 10²³ keV cm^?3 at 300K, greater changes of ?9 % occur with implants at 77K. Annealing studies indicate the optical absorption formed during irradiation is removed below 200°C whereas the index changes exist up to 400°C. For optical waveguide production a negative change in the index is not ideal as the damaged layer cannot directly act as the region of optical confinement. However the (dE/dx)_electronic term is unimportant and so we have been able to form optical waveguides by ion implantation with light energetic ions (e.g. MeV He⁺ ions) because the damaged layer is then formed beneath an unchanged high index surface layer. This retains the desirable electrooptic properties of the single crystal LiNbO₃. The experimentally observed waveguide modes are in accord with our theoretical predictions of the refractive index profiles.     

Theoretical expression for change of extraordinary refractive index in annealed proton exchanged LiNbO3 optical waveguides

A general expression for the change in extraordinary refractive index of the annealed proton exchanged LiNbO₃ waveguide has been deduced. The expression deduced explains the experimental results of decrease in change of extraordinary refractive index with annealing. The effect of annealing time has also been incorporated following Cao's model (Cao, Ramaswamy, Srivastava, J. Lightwave Technol. 10 (1992) 1302–1313). The concentration profile of protons in the annealed waveguide has been deduced theoretically, which is consistent with the previous results. The spontaneous polarization has been considered as the central mechanism for change in extraordinary refractive index due to proton exchange with annealing.     

Fabrication of embedded waveguides in lithium-niobate crystals by radiation damage

Irradiation of lithium-niobate crystals (LiNbO₃) with fast, high-energy ³He ions changes the refractive index in the interaction region where the ions speed through the material. Thus an inhomogeneous flux density profile can be used for a tailored modification of the optical properties of LiNbO₃ crystals, without employing ion implantation. A new method to fabricate embedded, polarization sensitive channel waveguides in LiNbO₃ utilizing accelerated ³He ions with an energy of 40 MeV is demonstrated. PACS 78.20; 42.82     

Characterization of optical waveguide in Nd: LuVO4 crystals by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd:LuVO₄ crystals by triple-energy O³⁺-ion implantation at energies of 2.4, 3.0, and 3.6 MeV and doses of 1.4, 1.4, and 3.1×10¹⁴ ions/cm², respectively. The prism-coupling method is used to investigate the dark-mode property at a wavelength of 633 nm. The refractive index profiles of the waveguide are reconstructed by the reflectivity calculation method (RCM). The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which indicates the formation of non-leaky waveguide in the crystal.     

Well-confined Yb:GdVO4 laser waveguide formed by MeV C ion implantation

The planar waveguide in x-cut Yb:GdVO₄ crystal has been fabricated by 6.0 MeV carbon ion implantation with the fluence of 1 × 10¹⁴ ions/cm² at room temperature. The modes of the waveguide were measured by the prism-coupling method with the wavelength of 633 nm and 1539 nm, respectively. An enhanced ordinary refractive index region was formed with a width of about 4.0 μm beneath the sample surface to act as a waveguide structure. By performing a modal analysis on the observed transverse magnetic polarized modes, it was found that all the transverse magnetic polarized modes can be well-confined inside the waveguide. Strong Yb-related photoluminescence in Yb:GdVO₄ waveguide has been observed at room temperature, which reveals that it exhibits possible applications for integrated active photonic devices.     

Optical waveguides in LiNbO<Subscript>3</Subscript> and stoichiometric LiNbO<Subscript>3</Subscript> crystals by proton exchange

The formation of optical planar waveguides in LiNbO₃ and stoichiometric LiNbO₃ crystals by proton exchange was reported. The prism-coupling method was used to characterize the dark-line spectroscopy at the wavelength of 633 and 1539 nm, respectively. The mode optical near-field outputs from proton-exchanged LiNbO₃ and SLN waveguides at 633 nm were presented. The mode field from stoichiometric LiNbO₃ (SLN) waveguide is lighter and more uniform than that from LiNbO₃ waveguide, which means the quality of the waveguide in SLN crystal is better than that of the LiNbO₃ waveguide. For proton-exchanged LiNbO₃ waveguides, the evolution of the refractive index profile with annealing was presented. The disorder profiles of Nb atoms in proton-exchanged LiNbO₃ waveguides were obtained by Rutherford backscattering/channeling technique. It is shown that the longer the exchange time, the larger the displacement of Nb atoms. Supported by the National Natural Science Foundation of China (Grant No. 10475052) and the Scientific Research Start-up Financing of Qufu Normal University     

Assessment of damage ranges by measurements of the refractive index in ion implanted LiNbO3 and LiTaO3

Ion implantation in LiNbO₃ and LiTaO₃ produces radiation damage by nuclear collisions. The amorphisation of the lattice reduces the refractive index of the material. In the case of fast ion bombardment with helium this damage layer is buried below the surface. The refractive index profile which then exists is suitable for an optical waveguide on the surface which supports several modes. Analysis of the refractive index profile yields the damage distribution in the crystal and this in turn can be compared with theoretical estimates of the damage production and ion ranges.

Our analyses show that in the high energy range from 0.5 to 2.0 MeV the depth of the damage is predominantly controlled by the electronic stopping.     

Effect of proton exchange and annealing on diffraction efficiency of Fe:LiNbO3 crystals

Influence of proton exchange and annealing on the photorefractive properties of Fe:LiNbO₃ crystals has been investigated using two-wave coupling phenomena. The two-wave coupling phenomena results in microscopic interference pattern inside the sample which subsequently helps in the formation of refractive index grating. The diffraction efficiency of the crystal increases after proton exchange, whereas the reverse is observed on annealed samples. The former is attributed to an increase of extraordinary refractive index of the crystal, while the latter to the oxidization of Fe²⁺ to Fe³⁺.     

Structural and optical properties of waveguides in YbVO4 crystals formed by 3.0 MeV Cu-ions implantation

We report on the structural and optical characterization of waveguides formed in YbVO₄ crystals by Cu²⁺-ion implantation with an energy of 3.0 MeV and doses of 3.0×10¹⁴-1.0×10¹⁵ ions/cm². The damage properties are determined by RBS/Channeling measurements with the help of simulation code RUMP. The m-line method is used to characterize the dark-mode spectroscopy in the planar waveguides. According to the reconstructed refractive index profile of the waveguide cross section, a numerical simulation is carried out to investigate the confinement of the light in the waveguides based on the beam propagation method.     

The study of damage and optical properties in LiNbO3 implanted by MeV Er and He ions

Abstract

Two LiNbO₃ (X and Y cut) crystals from different companies were implanted by 3.0 MeV Er ions to a dose of 7.5 × 10¹⁴ ions/cm² and 3.5 × 10¹⁴ ions/cm² with different beam current densities, respectively. After annealing at 1060°C in air for 2 hours, one LiNbO₃ sample was implanted by 1.5 MeV He ions to a dose of 1.5 × 10¹⁶ ions/cm². The Rutherford backscattering/channeling and prism coupling method have been used to study the damage and optical properties in implanted LiNbO₃. The results show: (1) the damage in LiNbO₃ created by 3.0 MeV Er ions depends strongly on the beam current density; (2) after annealing at 1060°C in air for 2 hours, a good Er doped LiNbO₃ crystal was obtained; (3) there is waveguide formation possible in this Er-doped annealed LiNbO₃ after 1.5 MeV He ion implantation. It is suggested that annealing is needed to remove the damage created by MeV Er ions before the MeV He ion implantation takes place, to realize the waveguide laser for Er doped LiNbO₃.