注入和输运对单层有机发光器件复合发光的影响

通过分析聚合物电致发光器件中载流子注入、输运、激子的解离与复合过程,提出了激子解离与复合的理论模型. 基于电流连续性方程和Poisson方程,给出了激子复合密度、电流密度及复合效率表达式.研究两电极与有机层之间在Ohmic和Fowler-Nordheim接触条件下载流子迁移率对器件中激子的复合密度及外加电压和注入势垒对器件电流和复合效率的影响.结果表明:1)在一个较宽的注入势垒和迁移率范围内,复合密度不是由两个注入电极的相对注入比决定而是由有机层电子和空穴迁移率之比所支配;2)固定阴极势垒,而阳极势垒由小变大时,器件电流由接触限制向空间电荷限制转变;3)复合效率随外电压升高先增加,当电压达一临界值时而陡降,存在一个最佳的注入势垒值.结果说明:电极与有机层的能带匹配及有机层间的迁移率匹配对器件复合发光有着极其重要的影响.其计算值与所报道的理论结果相符.     

高场下界面势垒对双层有机器件复合发光的影响

以高场作用下载流子对三角势垒的Fowler-Nordheim隧穿理论为基础,建立了双层有机电致发光器件中载流子的输运和复合发光模型.计算并讨论了所加电压与界面势垒对器件的复合电流及其复合效率的影响.该理论模型很好地解释了实验现象,并进一步证实了电场对复合区域的调制作用. 关键词： 有机电致发光 双层器件 界面势垒     

高场作用下有机双层器件的场致复合发光

以在高场作用下载流子对三角势垒的Fowler Nordheim隧穿理论为基础 ,建立了双层有机电致发光器件载流子的输运与复合发光模型。求出了稳态下电荷载流子的复合发光与电压和界面势垒的函数关系式 ,计算并讨论了所加电压和阳极区与阴极区厚度之比 (Lh/Le)对复合发光的影响。该理论模型很好地解释了电场对复合区域的调制作用。     

红外波长上转换器件中载流子阻挡结构的研究

复杂半导体材料结构中的载流子分布特性对器件性能有重要影响. 本文针对一种新型的波长上转换红外探测器, 研究了载流子阻挡结构对载流子分布和器件特性的影响. 论文通过自洽求解薛定谔方程、泊松方程、电流连续性方程和载流子速率方程分析了不同器件结构中的空穴分布. 同时, 生长了相应结构的外延材料, 并通过电致荧光谱分析了载流子阻挡结构对器件特性的影响. 结果表明, 2 nm厚的AlAs势垒层既能有效阻挡空穴又不影响电子输运, 有利于制作波长上转换红外探测器. 此外, 论文分析了阻挡势垒层的厚度和高度以及工作温度对载流子分布的影响. 本文研究结果亦可应用于其他载流子非均匀分布的半导体器件.     

双层有机发光二极管中复合效率和复合区域宽度的研究

本文建立了双层有机发光二极管中载流子的注入、输运和复合的理论模型.模型中采用了较合理的无序跳跃模型来处理界面问题.计算和讨论了空穴传输层厚度和内界面处的空穴势垒对器件复合效率和复合区域宽度的影响.结果表明:器件结构的变化导致电场强度在器件中的重新分布,空穴传输层厚度和内界面处空穴势垒的变化对器件的复合效率和复合区域宽度有重要影响.     

水溶性酞菁化合物对有机电致发光器件亮度和效率的影响

以水溶性酞菁铜(CuTcPc)为空穴注入层制备多层有机电致发光器件.ITO表面经过CuTcPc溶液修饰,能够提高空穴的注入能力,增加器件的电流密度和亮度.在有机电致发光器件中,空穴传输材料的空穴迁移率一般大于电子传输材料的电子迁移率,空穴是多数载流子;但是,CuTcPc修饰处理不仅提高了器件的电流密度和亮度,也提高了器...     

不规则H形量子势垒增强AlGaN基深紫外发光二极管性能

针对AlGaN基多量子阱中有效的平衡载流子注入问题,研究了有源区势垒层中Al组分调制形成的非规则H形量子势垒对AlGaN基深紫外发光二极管(LED)器件性能的影响及载流子的输运行为。研究发现,与多量子阱中常用的单Al组分势垒相比,加入Al组分较高的双尖峰势垒可以有效地提高内量子效率和光输出功率。进一步研究表明,电子在有源区因凸起的尖峰势垒而得到了有效的阻挡,减少了电子的泄露,而空穴获得更多的动能从而穿过较高的势垒进入有源区。因此,采用非对称H形量子势垒的深紫外LED器件中载流子输运实现了较好的平衡,量子阱中的载流子复合速率远高于普通的深紫外发光二极管。     

输运层厚度对双层有机器件复合发光的影响

采用ITO/PVK/Alq/Al双层电致发光（EL）结构,制备了三种载流子输运层厚度分别为30、60、120nm,发光层厚度均为300nm的有机薄膜EL器件,测试其EL谱及J-V特性曲线。根据有机EL器件中载流子的产生和输运过程导出了载流子复合几率及电子和空穴密度分布表示式,用以解释其发光强度随输运层厚度的变化关系,用一维无序结构载流子随机跃迁模型讨论输运层厚度对器件电流密度及启动电压的影响,探讨了载流子在薄膜中的输运过程,其理论与实验符合得很好。     

输运层势垒对双层结构器件复合发光的影响

通过分析双层结构器件复合发光的实际物理过程，建立了双层器件载流子输运与复合发光的多势垒的理论模型，计算并讨论了器件复合效率随外加电压及输运层势垒（包括势垒高度和宽度）的变化关系，该理论模型较好地解释实验现象。     

自旋极化有机电致发光器件中单线态与三线态激子的形成及调控

由于有机半导体（OSC）材料自旋弛豫时间长、自旋扩散长度大,OSC自旋器件逐渐成为研究热点.对于有机电致发光器件（OLED）,通过自旋极化电极调控单线态和三线态激子比率是提高其效率的有效方法.本文从漂移扩散方程和载流子浓度连续性方程出发,结合朗之万定律建立了一个自旋注入、输运、复合的理论模型.计算了OSC中的极化电子、空穴浓度,得出了单线态和三线态激子的比率.分析了电场强度、自旋相关界面电导、电极和OSC电导率匹配和电极极化率等因素的影响.计算结果表明：两电极注入反向极化的载流子并提高载流子自旋极化率,有     

电场对单层有机电致发光二极管复合发光的影响

以电流连续性方程为基础，用易测量的注入电流密度来确定载流子浓度的边界值，得出载流子浓度和电流密度的解析表达式。计算并讨论了电子密度和电子电流密度在器件中的分布，电场对它们的影响以及电场与势垒对复合效率的影响。该模型较好地解释了有关实验现象。     

Lifetime of nonequilibrium charge carriers in the base of <Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">n</Emphasis>-junction semiconductor diode at arbitrary injection levels

In the approximation of exponential distribution of nonequilibrium charge carriers in the base of semiconductor p-n-junction diode a formula is obtained for lifetime calculation, which is valid at arbitrary injection levels. The lifetime is determined via measurements of only stationary characteristics of diodes (dc-CVC and low-frequency differential resistance). These characteristics, as well as the dependence of the barrier capacity on the reverse voltage, for determination of equilibrium concentration of carriers in the diode base, have been measured for D226B alloy diodes. The dependence of the lifetime of nonequilibrium carriers on the injection level, calculated from experimental data, agrees with the Shockley-Read theory of recombination; this agreement may be considered as a justification of assumptions made for lifetime calculation.     

Gain mechanisms in field‐free InGaN layers grown on sapphire and bulk GaN substrate

The gain mechanisms and recombination dynamics of InGaN layers strongly depend on the structural properties of the substrate material. The 4.5 nm and 9.5 nm thick layers were grown by metal organic chemical vapor deposition on two different substrates (sapphire and GaN) with different dislocation densities. Time‐resolved photoluminescence spectroscopy at high excitation densities identifies the saturation of nonradiative recombination centers through excited carriers as a major gain mechanism. The prime argument is an unusual nonexponential luminescence decay. This was confirmed by a lower threshold of the optical gain for the structures grown on GaN with lower dislocation densities. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of atom-atom collisions on the collisional-radiative ionization and recombination coefficients of helium plasmas

Coefficients for volume recombination and ionization have been calculated for a dense helium plasma of low degree of ionization. The calculations are based on a collisional-radiative model in which electron-atom, electron-electron-ion, atom-atom, and electron-atom-ion collisions intervene. Molecular species such as He ₂ ^* and He ₂ ⁺ have not been taken into account. The essential results are: At low temperatures and high neutral gas densities the recombination coefficient is proportional to the number density of neutral helium atoms. At high temperatures the presence of neutral particles practically does not influence the recombination process compared to pure ion-electron-electron recombination. At high neutral particle densities, high atom temperatures and low electron densities the ionization process is mainly due to atom-atom collisions. In this point our calculations are in relatively good agreement with recent shock tube measurements of Kalra and Measures (Phys. Fluids14, 2544 (1971)). It is emphasized that the simple two-step model for ionization by shock waves in the noble gases should be replaced by a more general collisional-radiative model in which the atomic level structure intervenes in more detail.     

Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier

In this study,the efficiency droop of an InGaN light-emitting diode(LED)is reduced significantly by using a pAlGaN/GaN superlattice last quantum barrier.The reduction in efficiency droop is mainly caused by the decrease of electron current leakage and the increase of hole injection efficiency,which is revealed by investigating the light currents,internal quantum efficiencies,energy band diagrams,carrier concentrations,carrier current densities,and radiative recombination efficiencies of three LED structures with the advanced physical model of semiconductor device(APSYS).     

Fluorescence quenching by charge carriers in indolo[3,2-b]carbazole-based polymer

The fluorescence quenching by the applied voltage in a new indolocarbazole-based polymer poly{5,11-di-2,3-epoxypropyl-6-pentyl-5,11-dihydroindolyl[3,2-b]carbazolyl-alt-4,4′-tiobisbenzentiole} sandwiched between ITO and Al electrodes has been investigated. Time-resolved fluorescence measurements have shown that the excitons are quenched during their entire life-time. The fluorescence intensity showed complex dependence on the applied voltage and the excitation light intensity, memory effects and dynamics on time scale of tens of seconds. These effects are explained by the exciton quenching by mobile and trapped charge carriers. Charge carrier density dynamics calculated by using a simplified model evaluating carrier injection, photogeneration, recombination and trapping was used to model variations of the fluorescence intensity induced by the periodically applied voltage. These effects point out the importance of the fluorescence quenching by trapped carriers in organic materials possessing high density of carrier traps or with broad distribution of density of states.     

Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov–Perel' (DP) mechanism can be more important than the Bir–Aronov–Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping.     

Plasma channel formation in nitrogen upon electron beam injection

A theoretical study is performed of plasma channel formation and current neutralization upon injection of a high current electron beam into nitrogen under high pressure (p 70 torr). The complex ion formation and recombination mechanism is considered together with its effect on the parameters of the plasma formed and the dynamics of beam current neutralization. Analytical expressions are obtained for the densities of simple and complex ions in the limiting cases and numerical calculations are carried out by computer for a more general case. It is shown that in nitrogen at a pressure of 70 torr when complex ions are considered the plasma channel conductivity decreases by approximately 35–40%.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 59–65, December, 1990.