First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.     

Search for strangeness changing neutral currents induced by neutrinos in gargamelle

A sample of 9930 neutrino neutral current interactions has been examined for single strange particle production. No signal in the channels νN → νγX and νN → ν|gS⁰X, where X means non-strange hadrons, has been found. This yields an upper limit of 5.4 × 10^?3 to a 90% confidence level on the ratio [(ν → νΓX) + (ν → νΣ⁰X)]/[ν → ν + anything]     

Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1−xAs/In0.52Al0.48As multiple quantum wells

Transmission electron microscopy (TEM) and photocurrent (PC) measurements were carried out to investigate the microstructural properties and excitonic transitions in In_xGa_1−xAs/In_0.52Al_0.48As multiple quantum wells (MQWs) for x = 0.54, 0.57 and 0.60. TEM images showed that high-quality 11-period In_xGa_1−xAs/In_0.52Al_0.48As MQWs had high-quality heterointerfaces. The results for the PC spectra at 300 K showed that the peaks corresponding to the excitonic transitions from the ground state electronic sub-band to the ground state heavy-hole band (E₁-HH₁) and the ground state electronic sub-band to the ground state light-hole band (E₁-LH₁) became closer to each other with decreasing In mole fraction and that E₁-HH₁ and E₁-LH₁ excitonic peaks shifted to longer wavelength with increasing applied electric field. The calculated values of the E₁-HH₁ interband transition energies were in qualitative agreement with those obtained form the PC measurements with and without applied electric field. These results can be helpful in understanding potential applications of In_xGa_1−xAs/In_yAl_1−yAs MQWs dependent on In mole fraction and applied electric field in long-wavelength optoelectronic devices.     

Rotational Brownian Motion on Sphere Surface and Rotational Relaxation

The spatial components of the autocorrelation function of noninteracting dipoles are analytically obtained in terms of rotational Brownian motion on the surface of a unit sphere using multi-level jumping formalism based on Debye＇s rotational relaxation model, and the rotational relaxation functions are evaluated.     

A Complete Foliation of Schwarzschild Spacetime by Free Falling Hypersurfaces

Free falling hypersurfaces in the Schwarzschild geometry have been studied to provide a complete foliation of spacetime. The hypersurfaces do not cross into the maximally extended spacetime and are well behaved everywhere except at the singularity r =0 the mean extrinsic curvature becomes infinity.     

Self Mixing Fringes of Vertical-Cavity Surface-Emitting Lasers under Dual Reflector Feedback

The self-mixing fringes which shift due to every one-twentieth wavelength displacement of the target are observed. Taking advantage of the dual reflectors in the external cavity of lasers, the resolution of the sensors has been improved by 10 times. The role of the each reflector has been discussed in detail.     

Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

The electrical and the optical properties of InAs/GaAs quantum dots (QDs) grown by using atomic layer epitaxy (ALE) technique were investigated by using capacitance-voltage (C-V) and photoluminescence (PL) measurements. C-V curves showed that the plateaus related to the zero-dimensional carrier confinement effect existed and that the number of electrons occupying the InAs QD was approximately 7. The full width at half maxima of the interband transitions from the ground electronic subband to the ground heavy-hole subband and from the first excited electronic state to the first excited state heavy-hole subband were not significantly affected by the temperature variation, indicative of strong confinement of the carriers occupying the InAs QDs. These results can help improve understanding for applications of InAs/GaAs QDs grown by using ALE in high-efficiency electronic and optoelectronic devices.     

Instability of Solution of Phase Retrieval in Direct Diffraction Phase-Contrast Imaging with Partially Coherent X-Ray Source

The theoretical model of direct diffraction phase-contrast imaging with partially coherent x-ray source is expressed by an operator of multiple integral. It is presented that the integral operator is linear. The problem of its phase retrieval is described by solving an operator equation of multiple integral. It is demonstrated that the solution of the phase retrieval is unstable. The numerical simulation is performed and the result validates that the solution of the phase retrieval is unstable.     

Chemical Potential Dependence of Two-Quark Condensates

By adopting the background field method, the response of the dressed quark propagator to the presence of finite chemical potential is analysed up to the second order. From this, we obtain a model-independent formula for the chemical potential dependence （up to the second order） of the in-medium two-quark condensate and show by both Lorentz covariance arguments and explicit calculations that the O（μ） contribution to the in-medium two-quark condensate vanishes identically.     

Application of Electron-Shelving Detection via 423 nm Transition in Calcium-Beam Optical Frequency Standard

A new scheme of small compact optical frequency standard based on thermal calcium beam with application of 423 nm shelving detection and sharp-angle velocity selection detection is proposed. Combining these presented techniques, we conclude that a small compact optical frequency standard based on thermal calcium beam will outperform the commercial caesium-beam microwave dock, like the 5071 Cs clock （from Hp to Agilent, now Symmetricom company）, both in accuracy and stability.     

Effect of electron-beam irradiation on the magnetic properties of Ga1−xMnxAs thin films grown on GaAs (100) substrates

The effect of electron-beam irradiation on the magnetic properties of (Ga_1−xMn_x)As thin films grown on GaAs (100) substrates by using molecular beam epitaxy was investigated. The ferromagnetic transition temperature (T_c) of the annealed (Ga_0.933Mn_0.067)As thin films was 160 K. The T_c value for the as-grown (Ga_0.933Mn_0.067)As thin films drastically decreased with increasing electron-beam current. This significant decrease in the T_c value due to electron-beam irradiation originated from the transformation of Mn substituted atoms, which contributed to the ferromagnetism, into Mn interstitials or Mn-related clusters. These results indicate that the magnetic properties of (Ga_1−xMn_x)As thin films grown on GaAs (100) substrates are significantly affected by electron-beam irradiation.     

Locality Violation with Spin-Type W States without Using Inequalities

Using even and odd coherent states, we define a new state, which is called the spin-type W state. With the spin-type W states, we provide a new scheme for testing fundamental aspects of quantum mechanics and refuting local hidden variable theory without using inequalities. Finally, a scheme for preparing the spin-type W states, and discussion of experimental possibility and the effect of the measurement on physical observables due to a close orthogonality of the two coherent states are given.     

Quantum Entanglement in a System of Two Spatially Separated Atoms Coupled to the Thermal Reservoir

We study quantum entanglement between two spatially separated atoms coupled to the thermal reservoir. The influences of the initial state of the system, the atomic frequency difference and the mean number of the thermal field on the entanglement are examined. The results show that the maximum of the entanglement obtained with nonidentical atoms is greater than that obtained with identical atoms. The degree of entanglement is progressively decreased with the increase of the thermal noise. Interestingly, the two atoms can be easily entangled even when the two atoms are initially prepared in the most mixed states.     

Optical Waveguide Formed in RbTiOPO4 Crystal by 6.0 MeV O^3＋ Implantation

A planar optical waveguide was formed in RbTiOP04 crystal by 6.0-MeV oxygen ion implantation with the dose of 2 × 10^15 ions/cm2 at room temperature. Annealing at 200℃ for 30min in air is performed to improve the thermal stability of the waveguide. The dark modes of the waveguide are measured at wavelengths 633 and 1539 nm, respectively. The refractive index profiles in the guiding layer are reconstructed by using the reflectivity calculation method. TRIM＇98 code was carried out to simulate the damage profiles caused by the implantation process to obtain a better understanding of the waveguide formation.     

Exact Timing of Returned Molecular Wavepacket

An ionizing wavepacket of electron will re-visit its parent molecular ion during photoionization by strong laser field. This scenario is associated with physical concepts such as molecular re-scattering/collision, interference, diffraction, molecular clock, and generation of XUV light via high-order harmonic generation. On the workbench of a reduced dimensionality model of molecular hydrogen ions irradiated by laser pulse of 0.01-10.0 a.u. intensities, one-cycle pulsewidth, and 800nm wavelength, by deploying a momentum operator on the time-dependent wavefunction of an ionizing wavepacket, we can determine, in a precise manner, the exact time instant for the re-visiting electron to come back to the cation position. The time value is 57.6% of an optical cycle of the exciting laser pulse. This result may be useful in attosecond pump-probe experiments or molecular clock applications.     

Increase in Tc and spin glass transition in La0.9Ca0.1Mn1−yCryO3 (y=0, 0.1 and 0.2)

We report on the structural, frequency dependent ac susceptibility, dc magnetization and magnetoresistance (MR) measurements on polycrystalline samples of La_0.9Ca_0.1Mn_1−yCr_yO₃ (y=0, 0.1 and 0.2) prepared by sol-gel technique. For y=0, a paramagnetic to ferromagnetic transition is observed at T_c=136 K. Both for y=0.1 and 0.2, T_c increases from 136 to 180 K. For y=0, the imaginary part of the ac susceptibility shows a broad transition at T_f<T_c which does not depend very much on the frequency. However, for y=0.1 and 0.2, the frequency dependence resembles that of a spin glass. Though all the three samples show a semi-conducting behavior between 300 and 5 K, a negative MR is observed corresponding to T_c and T_f. The value of MR decreases for the Cr substituted samples.     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

Suppression of Chaos and Phase Locking in Two Coupled Nonidentical Neurons under Periodic Input

Dynamical behaviour of two coupled neurons with at least one of them being chaotic is presented. Bifurcation diagrams and Lyapunov exponents are calculated to diagnose the dynamical behaviour of the coupled neurons with the increasing coupling strength. It is found that when the coupling strength increases, a chaotic neuron can be controlled by the coupling between neurons. At the same time, phase locking is studied by the maxima of the differences of instantaneous phases and average frequencies between two coupled neurons, and the inherent connection of phase locking and the suppression of chaos is formulated. It is observed that the onset of phase locking is closely related to the suppression of chaos. Finally, a way for suppression of chaos in two coupled nonidentical neurons under periodic input is suggested.     

Fabrication of Long-Period Fibre Gratings Using 800 nm Femtosecond Laser Pulses

Long-period fibre gratings inside standard single-mode optical communication fibres are successfully fabricated with infrared femtosecond laser pulses. The refractive index perturbations are well confined within the fibre core by choosing the proper laser focusing parameters and translation speed of the fibre during the direct laser writing process. With the self-focusing effect considered and at a constant average irradiation dose of 1.62 × 10^3 J/（cm^2μm）, the threshold intensity for fabricating long-period gratings with infrared femtosecond laser pulses is determined to be 5.13 × 10^13 W/cm2.