Effect of Nonradiative Recombination on Carrier Dynamics in GaInNAs/GaAs Quantum Wells

The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.     

Mode control in a high gain relativistic klystron amplifier with3 GW output power

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.     

Mode control in a high gain relativistic klystron amplifier with 3 GW output power

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the FIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.     

Anomalous Temperature Dependence of Photoluminescence in GaInNAs／GaAs Multiple Quantum Wells

Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells grown on a GaAs substrate by molecular beam epitaxy are measured in a range of temperatures and excitation power densities.The energy position of the dominant PL peak shows an anomalous S-shape temperature dependence instead of the Varshni relation.By careful inspection,especially for the PL under lower excitation power density,two near bandedge peaks are well identified.These are assigned to carriers localized in nitrogen-induced bound states and interband excitonic recombinations,respectively.It is suggested that the temperature-induced switch of such two luminescence peaks in relative intensity causes a significant mechanism responsible for the S-shape shift observed in GaInNAs.A quantitative model based on the thermal depopulation of carriers is used to explain the temperature dependence of the PL peak related to N-induced bound states.     

Theory of noise in a kilo-Hz cascaded high-energy Yb-doped nanosecond pulsed fiber amplifier

A theoretical analysis of noise in a high-power cascaded fiber amplifier is presented. Unlike the noise theory in low power communication, the noise of a high power system is redefined as the leaked output energy between pulses with coherent beat noise uncounted. This definition is more appropriate for high power usage in which the pulse energy receives more attention than the pulse shape integrity. Then the low power pre-amplifying stages are considered as linear amplification and analyzed by linear theory. In the high-power amplification stages, the inversion is assumed to recover linearly in the time interval between pulses. The time shape of the output pulse is different from that of the input signal because of different gains at the front and back ends of the pulse. Then, a criterion is provided to distinguish the nonlinear and linear amplifications based on the signal-to-noise ratio （SNR） analysis. Then, an experiment that shows that the output SNR actually drops off in nonlinear amplification is performed. The change in the noise factor can be well evaluated by pulse shape distortion.     

Modelling and Analysis of Modal Behaviour in SOI Slot Waveguides

Mode behaviour for SOI slot waveguides is modelled and analysed using a numerical full vectorial method based on the film mode matching method （MMM）. Only the quasi-TE mode is investigated. Waveguide heights and slot widths, as well as silicon widths are properly chosen with respect to the single mode behaviour in the slot region. Comparison between the effective index method and our side loss method shows that our single mode condition is creditable. The optical power confinement in slot region for the quasi-TE mode is also studied and presented. We demonstrate that the maximum achievable optical power confinement Pslot and the maximum normalized average optical intensity Islot are 42% and 26um^-2, respectively.     

High repetition rate all-normal dispersion Yb:fiber laser for minimum pulses

Simulation and experimental results for high repetition rate all-normal dispersion Yb:fiber ring lasers are demonstrated for the cavity dispersion from 0.01 to 0.025 ps 2 .The simulation shows that the pulse spectrum has the potential to reach>30 nm for the dispersion of 0.014 ps 2 under practical pump power. This potential is proved by the experiment.Maximum spectral width of 30 nm is achieved at the repetition rate of 285 MHz under the 850-mW pump power.Average output power is 550 mW and dechirped pulse is 78 fs.     

In-line Fabry-Perot refractive index sensor based on microcavity

An in-line Fabry-Perot （FP） refractive index （RI） sensor based on an intrinsic FP cavity and fabricated by the etching and fusion splicing method is proposed. The experimental results demonstrate that the sensor possesses a high resolution of 1508 nm/RIU for the measurement of acetylene gas RI. The temperature- response measurement shows that the sensor is insensitive to room temperature variations. The FP RI sensor is suitable for applications in biosensing and environmental monitoring because of its high sensitivity and structural simplicity, thereby making it suitable for low-cost mass production.     

Tuning the fields focused by a high NA lens using spirally polarized beams(Invited Paper)

We show the power of spirally polarized doughnut beams as a tool for tuning the field distribution in the focus of a high numerical aperture(NA) lens.Different and relevant states of polarization as well as field distributions can be created by the simple turning of a λ∕2 retardation wave plate placed in the excitation path of a microscope.The realization of such a versatile excitation source can provide an essential tool for nanotechnology investigations and biomedical experiments.     

Inactivation of bovine immunodeficiency virus photodynamic therapy with HMME

To investigate the effect of photodynamic therapy （PDT） with hematoporphrin monomethyl ether （HMME） on bovine immunodeficiency virus （BIV） can provide the basis theory for photoinactivation of human immunodeficiency virus （HIV）. To assess the protection of HMME-PDT on the cell line Cf2Th infected with BIVR29 by 3-（4,5）-dimethylthiahiazol-2-yl-3,5-di-phenytetrazolium bromide （MTT） with power density of 5 and 25 mW/cm^2 and energy density from 0.6 to 3 J/cm^2. To observe the inhibition of membrane fusion using a new reporter cell line BIVE by fluorescence microscope. HMME-PDT has significant protectant effects on Cf2Th-BIVR29 with both power densities, especially in the group of high power density. Fluorescent microscope shows that there is no significant difference between the group of PDT and control, which means PDT could not inhibit the BIV-mediated membrane fusion.     

All-optical modulation at 1.3 μm wavelength in the inGaAsP/InP system

All-optical, normal-to-surface modulation in InGaAsP epitaxial layers, lattice matched to InP, is investigated. Close to the gap wavelength of 1.3 m a transmission increase under optical excitation is observed. A modulation depth of 34% is achieved for 0.8 mW pump power at 790 nm wavelength. The modulation frequency is limited by excess carrier lifetime. A 3 dB frequency of 80 MHz is achieved with a 10 dB decrease at 400 MHz. A lateral electric field enlarges the bandwidth but decreases the modulation depth. For weak excitation the experiments are well described in terms of direct electronic transitions between parabolic bands or in terms of simple band filling. The devices are well suited for parallel optical data processing.     

基于分子束外延生长的1.05 eV InGaAsP的超快光学特性研究

利用分子束外延方法制备了应用于四结光伏电池的1.05 eV InGaAsP薄膜, 并对其超快光学特性进行了研究. 温度和激发功率有关的发光特性表明: InGaAsP材料以自由激子发光为主. 室温下InGaAsP材料的载流子发光弛豫时间达到10.4 ns, 且随激发功率增大而增大. 发光弛豫时间随温度升高呈现S形变化, 在低于50 K时随温度升高而增大, 在50–150 K之间时减小, 而温度高于150 K时再次增大. 基于载流子弛豫动力学, 分析并解释了温度及非辐射复合中心浓度对样品材料载流子发光弛豫时间S形变化的影响.     

Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

A novel integratable and high speed InGaAsP multi-quantum well （MQW） complex-coupled distributed feedback （DFB） laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0. 14 W·A^-1 and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.     

Temperature dependent growth of InGaN/GaN single quantum well

InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the SQW surface is affected by the InGaN well-temperature, and the surface roughness decreased as the well-temperature reduced. Room-temperature photoluminescence (PL) and cathode luminescence (CL) shows the quantum well and quantum dot (QD)-like localized state light emission of the SQWs grown at 700 and 690 °C, respectively, whereas the samples grown at 670 and 650 °C present hybrid emission peaks. Excitation power dependent PL spectra indicates the QD-like localized state emission dominates at low excitation power and the quantum well emission starts to take over at high excitation power.     

Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator

An InGaAsP/InP waveguide variable optical attenuator (VOA) is proposed in this paper. The device consists of straight input and output waveguides and an S-bend waveguide. An electrode is deposited on a portion of the waveguide to form an active region so that its refractive index can be modified by a current injection, resulting in the variation of the transmitted optical power. The beam propagation method is employed in the numerical simulation and the device structure is optimized using a genetic algorithm. The optimized VOA has a low excess loss (<1 dB) and a large dynamic range of about 40 dB.     

Superfluorescence from europium atom at 629.977 nm

Visible superfluorescence at 629.977 nm is observed in europium atom with very high optical conversion efficiency on the transition 5d6p ¹⁰F_7/2 → 5d6s ¹⁰D_7/2. The peak intensity of fluorescence varies as square of the number of atoms in the excited state (N), which shows the superfluorescence character of the transition. The ratio of average superfluorescence power to excitation laser power is observed to be ∼15% in the forward direction.     

InGaAsP/InP evanescent mode waveguide optical isolators and their application to InGaAsP/InP/Si hybrid evanescent optical isolators

We theoretically investigated InGaAsP/InP evanescent mode waveguide optical isolators and proposed their application to InGaAsP/InP/Si hybrid evanescent optical isolators. InGaAsP/InP evanescent optical isolators are composed of semiconductor optical amplifier (SOA) waveguides having InGaAsP multiple quantum well (MQW) active layer and upper InGaAsP waveguide layer with ferromagnetic layer. Optical isolation is obtained for evanescent optical mode in the InGaAsP waveguide layer. InGaAsP/InP/Si hybrid evanescent optical isolators are theoretically proposed based on the idea of InGaAsP/InP evanescent optical isolators. InGaAsP/InP/Si hybrid evanescent optical isolators are composed of ferromagnetic metal loaded silicon evanescent waveguides with wafer-bonded InGaAsP/InP optical gain material. The optical isolation and propagation loss are discussed with the structure of silicon evanescent waveguides, and optical isolation of 8.0 dB/mm was estimated. The concept of semiconductor evanescent mode optical isolators is feasible with InP based photonic integrated circuits and advanced silicon photonics.     

Heterogeneous integration of InGaAsP microdisk laser on a silicon platform using optofluidic assembly

Heterogeneous integration of InGaAsP microdisk lasers on a silicon platform is demonstrated experimentally using an optofluidic assembly technique. The 200-nm-thick, 5- and 10-μm-diameter microdisk lasers are fabricated on InP and then released from the substrates. They are reassembled on a silicon platform using lateral-field optoelectronic tweezers (LOET). The assembled laser with 5-μm diameter exhibits a threshold pump power of 340 μW at room temperature under pulse condition. The heterogeneously-integrated InGaAsP-on-Si microdisk laser could provide the much needed optical source for CMOS-based silicon photonics. The small footprint and low power consumption make them attractive for optical interconnect applications. The optofluidic assembly technique enables efficient use of the III–V epitaxial materials in silicon photonic integrated circuits.     

Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate

The deformation surrounding Vickers indentations on InGaAsP/InP epilayers have been studied in detail. The surface topography was characterized by using atomic force microscopy (AFM). The material pile-up and sink-in regions around the indentation impression was observed for the quaternary InGaAsP/InP epilayers. The sectional analysis mode of the AFM shows the depth profile at the indented region. Microindentation studies were carried out for different atomic fraction of the quaternary InGaAsP/InP compound semiconductor alloys. The microhardness values of InGaAsP/InP epilayers were found to be in the range of 5.08 and 5.73 GPa. These results show that the hardness value of the quaternary alloy drastically increases as the composition of As was increased by 0.01 atomic fraction and when the phosphorous concentration decreases from 0.4 to 0.38. The reason may be that the increase in As concentration hardens the lattice when phosphorous concentration was less and hardness decreases when phosphorous was increased.     

Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers

In reference to real devices fabricated in laboratories, the optical properties of AlGaInAs, InGaNAs, and InGaAsP semiconductor material systems for 1.3-μm semiconductor lasers are systematically studied. Simulation results show that both the AlGaInAs/InP and InGaNAs/GaAs material systems have better gain performance and smaller transparency carrier density than the InGaAsP/InP material system. For the AlGaInAs/InP material system, the characteristic temperature is improved by using compensating tensile strain in barrier. Specifically, for a 250-μm-long short-cavity AlGaInAs/InP laser, when the barrier is with a compensating tensile strain of 0.39%, the characteristic temperatures in 290-330 K and 330-350 K can be enhanced to 121.7 K and 58.9 K, respectively. For the InGaNAs/GaAs material system, simulation results suggest that the laser performance can be significantly improved when the laser is with strain-compensated GaNAs barriers.