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 共查询到19条相似文献,搜索用时 218 毫秒
1.
A diode-pumped passively Q-switched Nd:YLF laser was demonstrated by using saturable absorber of Cr4 :YAG. At the incident power of 7.74 W, pure passively Q-switched laser with per pulse energy of 210μJ and pulse width of 19.6 ns at repetition rate of 1.78 kHz was obtained by using Cr4 :YAG with initial transmission of 80%. At the incident power of 8.70 W, a Q-switched mode-locking with average output power of 650 mW was achieved, the overall slop efficiency was 16%, corresponding to the initial transmission of 85% of Cr4 :YAG.  相似文献   

2.
End-pumped by a 976 nm diode laser,a high-repetition-rate Er:Yb:YAl_3(BO_3)_4 microchip laser passively Q-switched by a Co~(2+):MgAl_2 O_4 crystal is reported.At a quasi-continuous-wave pump power of 20 W,a 1553 nm passively Q-switched laser with the repetition rate of 544 kHz,pulse duration of 8.3 ns,and pulse energy of 3.9 μJ was obtained.To the best of our knowledge,the 544 kHz is the highest reported value for the 1.5 μm passively Q-switched pulse laser.In the continuous-wave pumping experiment,the maximum repetition rate of 144 kHz with the pulse duration of 8.0 ns and pulse energy of 1.7 μJ was obtained at the incident pump power of 6.3 W.  相似文献   

3.
A diode-pumped passively Q-switched Nd:YLF laser was demonstrated by using saturable absorber of Cr4+:YAG. At the incident power of 7.74 W, pure passively Q-switched laser with per pulse energy of 210 Μj and pulse width of 19.6 ns at repetition rate of 1.78 kHz was obtained by using Cr4+:YAG with initial transmission of 80%. At the incident power of 8.70 W, a Q-switched mode-locking with average output power of 650 Mw was achieved, the overall slop efficiency was 16%, corresponding to the initial transmission of 85% of Cr4+ :YAG.  相似文献   

4.
A passively Q-switched operation of a diode-pumped Nd.YVO_4 laser is demonstrated, in which a GaAsfilm is used as the saturable absorber as well as the output coupler. At the pump power of 10 W, a stablefundamental-mode average power output of 2.11 W was obtained with a pulse duration of 140 ns, pulseenergy of 76 μJ and pulse repetition rate of 28 kHz. A theoretical analysis that describes the passiveQ-switching dynamics of GaAs is presented.  相似文献   

5.
The intracavity photon density is assumed to be of Gaussian spatial distributions and its longitudinal variation is also considered in the rate equations for a laser diode (LD) end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber. These space-dependent rate equations are solved numerically. The dependences of pulse width, pulse repetition rate, single-pulse energy, and peak power on incident pump power are obtained. In the experiment, the LD end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber is realized and the experimental results are consistent with the numerical solutions.  相似文献   

6.
We demonstrate the first quasi-three-level passively Q-switched Nd:GGG laser at 937nm using a Nd, Cr:YAG crystal as the saturable absorber. The dependences of the average output power, the repetition rate and the pulse width on the incident pump power are obtained. A maximum average output power of 1.18 W with repetition rate of 35kHz and pulse width of 45ns is achieved at an incident pump power of 18.3 W. The corresponding optical-to-optical and slope efficiencies are 6% and 10%, respectively.  相似文献   

7.
Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW.  相似文献   

8.
We demonstrate a passively a Z-folded resonator. Using device, we achieve stable cw average output power under cw mode-locked Nd:LuVO4 laser operating on the quasi-three-level at 916nm with a semiconductor saturable absorber mirror (SESAM) as the passive mode-locking mode locking with 6.7ps pulse duration at repetition rate of 133 MHz and 88mW the pump power of 17.1 W.  相似文献   

9.
A single output Q-switched Nd:GdVO4 laser with a reflective graphene oxide(GO) saturable absorber was demonstrated. The shortest pulse duration in the Q-switched laser is 115 ns, and the output power ranges from1.23 W at 1.71 MHz to 2.11 W at 2.50 MHz when the pump power rises from 7.40 to 10.90 W with the utilization of GO Langmuir–Blodgett(LB) films based on the convenient and low-cost LB technique. To the best of our knowledge, it is the highest output power in a Q-switched laser with a GO saturable absorber.  相似文献   

10.
We demonstrate a diode-pumped passive Q-switched 946nm Nd: YAG laser with a diffusion-bonded composite laser rod and a co-doped Nd, Cr:YAG as saturable absorber. The average output power of 2.1 W is generated at an incident pump power of 14.3 W. The peak power of the Q-switched pulse is 643 W with 80kHz repetition rate and 40.8 ns pulse width. The slope efficiency and optical conversion efficiency are 17.6% and 14.7%, respectively.  相似文献   

11.
A diode-pumped passively mode-locked Nd:YVO4 laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%.  相似文献   

12.
H. Ge  S. Zhao  Y. Li  G. Li  D. Li  K. Yang  M. Li  G. Zhang  K. Cheng  Z. Yu 《Laser Physics》2009,19(6):1226-1229
We present a compact passively Q-switched mode-locked Nd:LuVO4 laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.  相似文献   

13.
A diode-pumped passively Q-switched Nd:Lu0.15Y0.85VO4 laser with a GaAs output coupler is demonstrated. By using a mixed crystal Nd:Lu0.15Y0.85VO4 as laser medium, the passively Q-switched laser can generate shorter pulse width with higher peak power in comparison with the passively Q-switched Nd:LuVO4 or Nd:YVO4 lasers under the same laser cavity. At the incident pump power 11.9 W, the minimum pulse width of 3.23 ns and the maximum peak power 1.67 kW can be obtained. The average output power and the pulse repetition rate of the laser are also measured. The experimental results show that the mixed crystal is a promising laser medium for shorter Q-switched pulse with higher peak power.  相似文献   

14.
We demonstrated a diode-pumped passively mode-locked c-cut Nd:LuVO4 picosecond laser with a semiconductor saturable-absorber mirror (SESAM) at a wavelength of 1067.8 nm. Due to the wide bandwidth of 0.48 nm, stable mode-locking has been generated with a duration as short as 3.7 ps, which is shorter than for the a-cut Nd:LuVO4 laser. A maximum output power of 1.67 W was achieved to give a highest peak power of 3.47 KW at 18 W absorbed pump power.  相似文献   

15.
采用发射波长约为976 nm的半导体激光器作为泵浦源,Yb~(3+)掺杂浓度为1. 5at.%、通光长度为2 mm的Yb∶CaYAlO_4晶体作为增益介质,本文提出了一种基于半导体可饱和吸收镜(SESAM)被动调Q的激光二极管泵浦Yb∶CaYAlO_4以获取稳定脉冲输出的方案。通过合理设计谐振腔,实现了稳定的被动调Q激光脉冲输出,并分析了泵浦功率的大小对输出脉冲的重复频率、脉冲宽度、单脉冲能量以及脉冲峰值功率的影响。  相似文献   

16.
Diffusion bonded Nd:YAG/Cr:YAG composite laser crystal has been employed to perform a compact diode-pumped passively Q-switched laser. At the incident pump power of 3.3 W and pulse repetition rate of 16.3 kHz, the maximum average output of 592 mW has been obtained, corresponding to an optical-to-optical conversion efficiency of 18%. Stable passively Q-switched operation with peak power of 6.5 kW and pulse duration of 6 ns was also achieved. It has been experimentally revealed that Nd:host/Cr:YAG composite structure is a promising material for compact cost-effective Q-switched laser sources with high-peak power and short pulse duration. In addition, thermal lens effect (TLE) in the active medium and its impact on the Q-switched laser performance have been analyzed.  相似文献   

17.
Passively Q-switched quasi-continuous-wave (QCW) diode-pumped Nd:YAG laser with Cr^4+ :YAG as saturable absorber is numerically investigated by solving the coupled rate equations. The threshold pump rate for passively Q-switched QCW-pumped laser is derived. The effects of the pump rate and pump-pulse duration on the laser operation characteristics are studied theoretically. The pump power range can be estimated according to the number of output pulses. The numerical simulation results are in good agreement with the experimental results.  相似文献   

18.
We report the amplification of a low-power 4-mW microchip Nd:YVO4 laser at 1064?nm, passively Q-switched with a semiconductor saturable absorber mirror (SESAM). An end-pumped two-stage amplifier module with small-signal gain of 56?dB has been designed to boost the power, generating 6?W at 550?kHz with 100-ps pulses and M 2?=?1.2. Second-harmonic generation in critically phase-matched LBO yielded 3?W at 532?nm, with pulse stability comparable to that of the fundamental frequency.  相似文献   

19.
The intracavity photon density is assumed to be of Gaussian spatial distributions and its longitudinal variation is also considered in the rate equations for a laser diode(LD)end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber.These space-dependent rate equations are solved numerically.The dependences of pulse width,pulse repetition rate,single-pulse energy,and peak power on incident pump power are obtained.In the experiment,the LD end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber is realized and the experimental results are consistent with the numerical solutions.  相似文献   

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