GaAs量子阱半导体微腔中腔极化激元的动态行为

GaAs量子阱半导体微腔中, 光子同时与重空穴激子、轻空穴激子耦合形成腔极化激元. 本文采用三谐振子耦合模型, 计算了腔极化激元的三支的色散关系、线宽、有效质量及其群速度; 结果表明, 由于腔极化激元的三支中光子、重空穴激子、轻空穴激子所占的权重随着平面波矢（或入射角度）变化, 腔极化激元三支的线宽、有效质量及其群速度呈现出不同的动态行为.     

Bipolariton laser emission from a GaAs microcavity

Biexciton emission properties were studied in a single GaAs quantum well semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower polariton mode. This new mode appears when we detune the cavity resonance out of the lower polariton branch, showing a laser-like behavior. Very small linewidths were measured, lying below 110 μeV and 150 μeV for polariton and bipolariton emission respectively. The input/output power (I/O) measurements show that the bipolariton emission has a weaker coupling efficiency compared to previous results for polariton emission. Varying the pump laser polarization, we were able to show the selection rules for the biexciton particle creation in the quantum well. Simultaneous photoluminescence and near-field measurements show that the polariton and bipolariton emission are spectrally and spatially separated.     

Optical properties of microcavity polaritons

This work contains a theoretical analysis of the optical properties of semiconductor quantum wells embedded in planar Fabry-Perot microcavities. In particular, the properties of the system in correspondence to the excitonic transition are studied by means of the polariton formalism. The polariton states in microcavities are derived and the polar-iton dispersion is presented. Particular emphasis is put on the existence of two well distinct regimes depending on the exciton and cavity parameters: strong coupling and weak coupling regime. The main experimental results are reviewed and compared with the prediction of the theory. After the polariton states have been characterized, the optical response of the system is discussed, with particular attention to the photoluminescence measurements. The polariton formation and relaxation through phonon scattering and the effect of the exciton inhomogeneous broadening are considered and, finally, a phe-nomenological model for the polariton photoluminescence spectra is presented.     

Temperature dependence of linewidths in the Raman spectrum of pyrargyrite (Ag3SbS3)

The linewidths of bands in the Raman spectrum of pyrargyrite (Ag₃SbS₃) have been examined as a function of temperature. A band at 190 cm^-1 arising from stretching of Ag-S bonds has been studied in detail and is shown to broaden with increasing temperature much faster than other bands in the spectrum. The connection between this enhanced broadening and the possible disordering of the Ag ions is discussed. The linewidth behaviour is shown to be similar to the corresponding results for the isomorphous crystal proustite (Ag₃AsS₃) and it is concluded that the disorder or motion of the Ag ions that is responsible for the broadening is unrelated to the phase transitions that occur in proustite.     

Thermodynamics and excitations of condensed polaritons in disordered microcavities

We study the thermodynamic condensation of microcavity polaritons using a realistic model of disorder in semiconductor quantum wells. This approach correctly describes the polariton inhomogeneous broadening in the low density limit, and treats scattering by disorder to all orders in the condensed regime. While the weak disorder changes the thermodynamic properties of the transition little, the effects of disorder in the condensed state are prominent in the excitations and can be seen in resonant Rayleigh scattering.     

Conditions and features of the lasing in traps for the bose condensation of dipolar excitons

We study the conditions and features of the polariton mode lasing in traps for the Bose condensation of dipolar excitons. We discuss the spectral linewidth of lasing modes and the effects of spatial and spectral inhomogeneity of the exciton distribution. We study in detail the possibility of the polariton mode lasing in the vicinity of the Bose condensation threshold. We analyze the impact of the inhomogeneous broadening of the exciton line on the stability of stationary lasing. We also propose additional experiments aimed at obtaining more information on the polariton mode lasing in semiconductor structures for the Bose condensation of excitons.     

The dynamics of a polariton dimer in a disordered coupled array of cavities

We investigate the effect of disorder in the laser intensity on the dynamics of dark-state polaritons in an array of 20 cavities, each containing an ensemble of four-level atoms that is described by a Bose-Hubbard Hamiltonian. We examine the evolution of the polariton number in the cavities starting from a state with either one or two polaritons in one of the cavities. For the case of a single polariton without disorder in the laser intensity, we calculate the wavefunction of the polariton and find that it disperses away from the initial cavity with time. The addition of disorder results in minimal suppression of the dispersal of the wavefunction. In the case of two polaritons with an on-site repulsion to hopping strength ratio of 20, we find that the polaritons form a repulsively bound state or dimer. Without disorder the dimer wavefunction disperses similarly to the single polariton wavefunction but over a longer time period. The addition of sufficiently strong disorder results in localization of the polariton dimer. The localization length is found to be described by a power law with exponent ? 1.31. We also find that we can localise the dimer at any given time by switching on the disorder.     

Lasing threshold in traps for Bose-condensation of dipolar excitons

We consider exciton recombination lasing in heterostructure traps for Bose–Einstein condensation of dipolar excitons. We show that such structures suit well for class D lasers where cavity decay strongly exceeds polarization decay. We evaluate lasing threshold taking into account specific inhomogeneous broadening of the exciton spectral line owing to Bose–Einstein condensation phenomenon under quasi-equilibrium conditions.It is found that narrowing of the exciton momentum distribution just before the condensation onset considerably lowers lasing threshold. At the same time, it is pointed out that a subsequent formation of condensate itself does not help lasing much. We conclude that it is possible to achieve lasing on polariton modes in nowadays experiments aimed on Bose–Einstein condensation of excitons.     

Polariton reflectance spectra from thin ZnSxSe1−x layers

A study of reflectance spectra from thin ZnS_xSe_1−x solid-solution layers in the region of excitonic resonances is reported. It has been found that an increase in sulfur concentration in the layers increases the inhomogeneous broadening of the quantized polariton lines. It has been established that the inhomogeneous line broadening in a reflectance spectrum depends on the magnitude of exciton-photon mixing; it is small in the long-wavelength region where the photon component of the polariton is large, and large at short wavelengths where the mechanical component dominates. Fiz. Tverd. Tela (St. Petersburg) 40, 867–868 (May 1998)     

Spin relaxation for biradical spin probes in anisotropic environments

The large zero-field splitting of certain biradicals makes them important candidates for spin probes of anisotropic systems such as liquid crystals and membranes. The electron resonance spectrum of a biradical dissolved in a liquid crystal may be influenced by the zero-field splitting in two quite distinct ways. Firstly the line positions are affected because the spin probe is partially oriented by the liquid crystal solvent. In addition the zero-field splitting coupled with the molecular reorientation constitutes a powerful spin relaxation process and so may determine the widths of the spectral lines. Here we develop a theory of such line broadening, within the limit of fast motion, and show how it results in an angular dependence of the linewidths. The application of the theory is illustrated by studying the line broadening for a nitroxide biradical dissolved in a nematic mesophase. An analysis of the angular dependence of the linewidths suggests that the diffusion model provides a better account of molecular reorientation in a liquid crystal than the strong-collision approach. Finally we draw attention to the potential value of the theory for understanding the linewidth variations in the deuteron magnetic resonance spectra of liquid crystals.     

Dispersive phonon linewidths: the E2 phonons of ZnO

Phonon linewidths can exhibit a large variation when either pressure or isotopic masses are changed. These effects yield detailed information about the mechanisms responsible for linewidths and lifetimes, e.g., anharmonicity or isotopic disorder. We report Raman measurements of the linewidth of the upper E2 phonons of ZnO crystals with several isotopic compositions and their dependence on pressure. Changes by a factor of 12 are observed at a given temperature. Comparison with calculated densities of one-phonon states, responsible for isotope scattering, and of two-phonon states, responsible for anharmonic decay, yields a consistent picture of these phenomena. Isotopic disorder broadening by 7 cm(-1) is found in samples with mixed 16O-18O content, whereas the anharmonic processes involve decay into sums and differences of two phonons.     

Acoustic detection in millimeter wave spectroscopy: Pressure broadening of CH3CN

The pressure broadening of the different K components of the J=3–4 rotational line of CH₃CN have been measured. A novel experimental apparatus employing a very small cell with an acoustic detector is described and a comparison with theoretically estimated linewidths is discussed.     

Cavity linewidth narrowing with dark-state polaritons

We present a quantum-theoretical treatment of cavity linewidth narrowing with intracavity electromagnetically induced transparency(EIT). By means of intracavity EIT, the photons in the cavity are in the form of cavity polaritons:bright-state polariton and dark-state polariton. Strong coupling of the bright-state polariton to the excited state induces an effect known as vacuum Rabi splitting, whereas the dark-state polariton decoupled from the excited state induces a narrow cavity transmission window. Our analysis would provide a quantum theory of linewidth narrowing with a quantum field pulse.     

Books received

The inhomogeneous broadening of optical transitions in solids is of fundamental importance in understanding the interaction of optical centres with their environment. In perfect crystals optical linewidths are determined by excited state lifetime and other d-phasing mechanisms such as the electron-phonon interaction. However, in real crystals random differences of impurities in crystallographically equivalent sites result in overlapping transitions and inhomogeneously broadened Gaussian lines. The suppression of inhomogeneous broadening of solid-state spectra using optical hole-burning and fluorescence line-narrowing techniques is discussed in terms of the determination of the homogeneous widths, multi-site geometries and the distributions of spectroscopic parameters that accompany disorder in a number of laser crystals and glasses.     

Pressure-broadened linewidths of hydrogen sulfide

Self-broadened and foreign-gas (N₂ and O₂) broadened linewidths of H₂S at 300°K have been calculated using the Anderson-Tsao-Curnutte theory of line broadening for a wide range of quantum numbers J and K_a, in both type A and type B bands. Computed values for self-broadened linewidths are in good agreement with the experimental results of Helminger and De Lucia. Air-broadened linewidths of H₂S at 200°K have also been calculated, so that the temperature dependence can be estimated.     

Polariton parametric amplifier pump dynamics in the coherent regime

We studied the pump coherent dynamics in a II-VI microcavity parametric amplifier, using angle-resolved four-wave mixing. The polariton parametric amplification is found to result in a strong quenching and saturation of the pump coherence lifetime above the threshold. For the polariton scattering processes that remain below the amplification threshold, we find an angle-dependent collision broadening associated with the efficiency of the polariton scattering towards the excitonic reservoir.     

Raman spectra of photorefractive lithium niobate single crystals

We have conducted comparative studies of the Raman spectra of lithium niobate (LiNbO₃) crystals of different compositions for excitation in the visible and near IR regions. We have observed that the photorefractive effect is one of the factors leading to line broadening. For this reason, the linewidths may be greater upon Raman excitation in the visible region than for excitation in the near IR region. This may be explained by formation in the crystal, when illuminated by laser radiation in the visible region, of a three-dimensional sublattice of nanostructures and microstructures (with refractive index and other physical parameters different from the parameters of the host crystal) from which photorefractive light scattering occurs. Formation of nanostructures and microstructures makes an additional contribution (besides the contribution due to random and dynamic disorder in the arrangement of the structural units) to the broadening of the Raman lines in the visible region of the spectrum. Illumination of the crystal by radiation in the near IR region does not induce a sublattice of nanostructures and microstructures, due to a significantly smaller photorefractive effect.     

Study of Be δ-doped GaAs/AlAs multiple quantum wells by the surface photovoltage spectroscopy

We report a surface photovoltage and differential surface photovoltage (DSPV) study of Be δ-doped GaAs/AlAs multiple quantum wells (QWs) with widths ranging from 3 to 20 nm and sheet doping densities from 2 × 10¹⁰ to 2.5 × 10¹² cm⁻² per well aiming to characterize their electronic properties and structural quality. From a line shape analysis of room temperature DSPV spectra the interband excitonic transition energies and broadening parameters for a large number of QW-related subbands have been established. A study of well-width and quantum number dependencies of the excitonic linewidths allowed us to evaluate the various broadening contributions to the spectral line shapes in QWs of different design. It was found that an average half monolayer well-width fluctuations are the dominant broadening mechanism of the excitonic line for QWs thinner than 10 nm. In QWs thicker than 10 nm, the spectral line broadening originates mainly from thermal broadening as well as Stark broadening due to random electric fields of ionized impurities and exciton scattering by free holes.     

Broadening of upper polariton branch in GaAs, GaN, and ZnO semiconductor microcavities

The well-distinguished lower polariton branches (LPBs) and upper polariton branches (UPBs) are characteristics of strong coupling in semiconductor microcavities (MCs). In practice, however, the UPBs are often broadening especially in wide-bandgap material MCs. We present in detail the possible physical mechanisms for the broadening of UPBs for different designs of MCs by numerical simulations based on GaAs, GaN and ZnO materials. The calculated results show that the UPBs of the GaN- and ZnO-based MCs will become indistinct when the thickness of optical cavity is larger than λ and 0.25λ, respectively, mainly attributed to the larger product of the absorption coefficient and the active layer thickness. In wide-bandgap materials, it would be relatively easier to observe the UPB in the case of negative exciton-cavity mode detuning due to the exciton-like UPB and lower absorption of scattering states. In addition, the inhomogeneous broadening would be an important factor causing the invisible UPB in wide-bandgap semiconductor MCs. We demonstrate that in multiple quantum well embedded ZnO-based MCs, the UPB could be well defined due to the large 2D exciton binding energy and the small product of absorption coefficient and active layer thickness. These results show that the UPBs can be properly defined in wide-bandgap semiconductor MCs by appropriate design of the MC structures.     

Dispersive optical bistability in a ring cavity

Equations governing the behaviour of a single mode high-Q ring cavity are obtained for a coherent driving field (detuned to both cavity and atoms) and inhomogeneously broadened atomic transitions using a Hamiltonian approach. We find the region of bistability and critical points in the homogeneous broadening case. Numerical results including inhomogeneous broadening show that bistability is obtained more readily by detuning both the atomic transition and the cavity mode relative to the driving field.