异质结型CuO/ZnO复合纳米线的制备及光催化性能

在室温下,通过溶液法在Cu衬底上制备了CuO纳米线,然后采用溶剂热法在CuO纳米线表面生长ZnO纳米颗粒以构建CuO/ZnO复合纳米线异质结构。利用扫描电镜、透射电镜、X射线衍射仪和X射线光电子能谱分析了样品的形貌、结构和元素组成。结果显示CuO/ZnO复合纳米线由ZnO纳米颗粒和CuO纳米线组成。在模拟太阳光照射下,以亚甲基蓝溶液为模拟污染物研究了样品的光催化性能。结果表明,相比纯CuO纳米线,CuO/ZnO复合纳米线能够使亚甲基蓝溶液的光降解效率达到40%,在相同条件下具有更优异的光催化活性。光催化机理研究表明CuO/ZnO纳米复合材料光催化活性的增强主要是由于CuO与ZnO结合形成的p-n异质结有效促进了光生载流子的分离。     

ZnO/CuO 核壳结构纳米线光致发光性能 与CuO壳层厚度的关系

通过分别生长核层与壳层制备出了ZnO/CuO核壳结构的纳米线。形貌和结构分析表明,ZnO核为单晶纳米线而CuO则以多晶形式覆盖在核层表面上。光致发光(PL)研究表明,ZnO纳米线PL强度随CuO壳层厚度的变化而变化。当壳层比较薄时ZnO的PL强度增大,这主要是由于CuO壳层对ZnO核层的修饰减少了表面态,而当壳层厚度增加到一定程度时,ZnO的PL强度不再变化,这主要是由于在核壳结构中形成了type-I型结构的原因。我们对这一现象做了详细的讨论。     

氧化镁纳米分级结构的合成及生长机理分析

采用气相合成技术合成了MgO三维纳米分级结构.该结构由纳米线、纳米棒、纳米丝3部分组成.高分辨电镜照片显示第一级纳米线的生长方向为[100],纳米棒与纳米丝呈四次对称分布在纳米线的侧面,其生长方向为[110].沉积区的高温和适当的反应物对三维分级纳米结构的形成起了决定性作用,气固生长模式和气液固生长模式共同主导了三维分级纳米结构形成.     

银纳米线的侧向生长及其抑制研究

采用多元醇法,在不同温度,不同PVP滴加速度和加入量的条件下合成了银纳米线。利用XRD,UV-Vis,SEM和TEM对银纳米线及其侧向生长过程进行了观察和分析。UV-Vis表明银纳米线在纵向生长的同时发生了侧向生长。而且表示银纳米线侧向生长的紫外吸收光谱峰在银纳米线合成后期发生了明显的红移,由384nm红移至约388nm处,表明银纳米线合成后期直径迅速增长,银纳米线发生了快速的侧向生长。SEM研究表明银纳米线直径在反应前期(15~23min)只增加了20nm,而在反应后期(23~30min)银纳米线直径增加了近150nm,SEM观察结果与UV-Vis分析结论一致。同时还发现银纳米线直径不仅与晶种大小有关而且与银线外覆盖的银层厚度有关,银源以吸附在银线侧面的小银颗粒为附着点沿其侧面多点沉积导致了银纳米线的侧向生长;降低反应液温度(165℃降至155℃),降低PVP滴加速度(67mL·h~(-1)减小到49mL·h~(-1))以及减少银纳米线合成后期PVP加入量可抑制银纳米线的侧向生长,显著提高银纳米线长径比,银纳米线直径由200nm减小至100nm左右,长度仍保持在100μm以上。     

取向和非取向In2O3纳米线的场发射研究

用自制的设备制备了取向和无取向氧化铟纳米线,并研究了In2O3纳米线的场发射性质,发现取向纳米线比非取向纳米线有着更好的场发射特性.取向纳米线的开启和阈值场强明显低于非取向纳米线,这可能是由于取向纳米线之间的场屏蔽效应较弱以及取向纳米线有较多的顶部发射端的缘故.     

利用氧化辅助气固法生长高磁性的α-Fe2O3和Fe3O4纳米线

探讨生长α-Fe₂O₃和Fe₃O₄纳米线的一个可控制的合成过程. 在研究中发现,高磁性的α-Fe₂O₃纳米线已经成功地利用氧化辅助气固法结晶生成于Fe_0.5Ni_0.5合金基板上;若基板事先浸泡于草酸溶液中,随草酸浓度的增加,所生长的纳米线晶相会逐转变为Fe₃O₄,当草酸浓度达到0.75 mol/L时,所生长的纳米线几乎全部转变成Fe₃O₄晶相. 此外,实验结果也显示所生长的纳米线长度及直径会随着气固过程中的温度上升而增加,生长密度则会随着气固过程中的流量加大而上升. 此过程所提出的合成程序可在2 h內完成.     

取向和非取向In2O3纳米线的场发射研究

用自制的设备制备了取向和无取向氧化铟纳米线，并研究了In₂O₃纳米线的场发射性质，发现取向纳米线比非取向纳米线有着更好的场发射特性.取向纳米线的开启和阈值场强明显低于非取向纳米线，这可能是由于取向纳米线之间的场屏蔽效应较弱以及取向纳米线有较多的顶部发射端的缘故. 关键词： 场发射 纳米线 取向 非取向     

单晶ZnO纳米线的合成和生长机理研究

用化学气相输运(CVT)方法合成了直径在20～120nm呈单晶结构的ZnO纳米线.利用场发射扫描电 镜(FESEM)、高分辨透射电镜(HRTEM)以及选区电子衍射(SAED)等技术对ZnO纳米线的生长机理和结构进行 了系统研究,结果表明,纳米线的成核与Au Zn合金催化颗粒的饱和度有直接的关系,先饱和的颗粒上纳米线首 先成核.纳米线顶端合金颗粒组成的变化是导致纳米线生长终止的重要原因,大量纳米线的生长不是同时进行 的.本工作提供了支持纳米线气液固(V L S)生长机理的新实验证据,提出了氧化物纳米线的生长机理.     

金辅助催化方法制备GaAs和GaAs/InGaAs纳米线结构的形貌表征及生长机理研究

利用金（Au）辅助催化的方法，通过金属有机化学气相沉积技术制备了GaAs纳米线及GaAs/InGaAs纳米线异质结构.通过对扫描电子显微镜（SEM）测试结果分析，发现温度会改变纳米线的生长机理，进而影响形貌特征.在GaAs纳米线的基础上制备了高质量的纳米线轴、径向异质结构，并对生长机理进行分析.SEM测试显示，GaAs/InGaAs异质结构呈现明显的“柱状”形貌与衬底垂直，InGaAs与GaAs段之间的界面清晰可见.通过X射线能谱对异质结样品进行了线分析，结果表明在GaAs/InGaAs轴向纳米线异质结构样品中，未发现明显的径向生长.从生长机理出发分析了在GaAs/InGaAs径向纳米线结构制备过程中伴随有少许轴向生长的现象.     

硅(001)图形衬底上锗硅纳米线的定位生长

纳米线的定位生长是实现纳米线量子器件寻址和集成的前提.结合自上而下的纳米加工和自下而上的自组装技术,通过分子束外延生长方法,在具有周期性凹槽结构的硅(001)图形衬底上首先低温生长硅锗薄膜然后升温退火,实现了有序锗硅纳米线在凹槽中的定位生长,锗硅纳米线的表面晶面为(105)晶面.详细研究了退火温度、硅锗的比例及图形周期对纳米线形成与否,以及纳米线尺寸的影响.     

Geometry and physics of wrinkling

The wrinkling of thin elastic sheets occurs over a range of length scales, from the fine scale patterns in substrates on which cells crawl to the coarse wrinkles seen in clothes. Motivated by the wrinkling of a stretched elastic sheet, we deduce a general theory of wrinkling, valid far from the onset of the instability, using elementary geometry and the physics of bending and stretching. Our main result is a set of simple scaling laws; the wavelength of the wrinkles lambda approximately K(-1/4), where K is the stiffness due to an "elastic substrate" effect with a multitude of origins, and the amplitude of the wrinkle A approximately lambda. These could form the basis of a highly sensitive quantitative wrinkling assay for the mechanical characterization of thin solid membranes.     

Wrinkling of vesicles during transient dynamics in elongational flow

Recent experiments by Kantsler et al. [Phys. Rev. Lett. 99, 178102 (2007)10.1103/PhysRevLett.99.178102] have shown that the relaxational dynamics of a vesicle in external elongation flow is accompanied by the formation of wrinkles on a membrane. Motivated by these experiments we present a theory describing the dynamics of a wrinkled membrane. The formation of wrinkles is related to the dynamical instability induced by negative surface tension of the membrane. For quasispherical vesicles we perform analytical study of the wrinkle structure dynamics. We derive the expression for the instability threshold and identify three stages of the dynamics. The scaling laws for the temporal evolution of wrinkling wavelength and surface tension are established, confirmed numerically, and compared to experimental results.     

Wrinkling of pressurized elastic shells

We study the formation of localized structures formed by the point loading of an internally pressurized elastic shell. While unpressurized shells (such as a ping-pong ball) buckle into polygonal structures, we show that pressurized shells are subject to a wrinkling instability. We study wrinkling in depth, presenting scaling laws for the critical indentation at which wrinkling occurs and the number of wrinkles formed in terms of the internal pressurization and material properties of the shell. These results are validated by numerical simulations. We show that the evolution of the wrinkle length with increasing indentation can be understood for highly pressurized shells from membrane theory. These results suggest that the position and number of wrinkles may be used in combination to give simple methods for the estimation of the mechanical properties of highly pressurized shells.     

The wrinkle and its measurement--a skin surface Profilometric method

This study outlines a simple 'Profilometric' method for measuring the size and function of the wrinkles. Wrinkle size was measured in relaxed conditions and the representative parameters were considered to be the mean 'Wrinkle Depth', the mean 'Wrinkle Area', the mean 'Wrinkle Volume', and the mean 'Wrinkle Tissue Reservoir Volume' (WTRV). These parameters were measured in the wrinkle profiles under relaxed conditions. The mean 'Wrinkle to Wrinkle Distance', which measures the distance between two adjacent wrinkles, is an accurate indicator of the muscle relaxation level during replication. This parameter, identified as the 'Muscle Relaxation Level Marker', and its reduction are related to increased muscle tone or contraction and vice versa. The mean Wrinkle to Wrinkle Distance is very important in experiments where the effectiveness of an anti-wrinkle preparation is tested. Thus, the correlative wrinkles' replicas, taken during follow up in different periods, are only those that show the same mean Wrinkle to Wrinkle Distance. The wrinkles' functions were revealed by studying the morphological changes of the wrinkles and their behavior during relaxed conditions, under slight increase of muscle tone and under maximum wrinkling. Facial wrinkles are not a single groove, but comprise an anatomical and functional unit (the 'Wrinkle Unit') along with the surrounding skin. This Wrinkle Unit participates in the functions of a central neuro-muscular system of the face responsible for protection, expression, and communication. Thus, the Wrinkle Unit, the superficial musculoaponeurotic system (superficial fascia of the face), the underlying muscles controlled by the CNS and Psyche, are considered to be a 'Functional Psycho-Neuro-Muscular System of the Face for Protection, Expression and Communication'. The three major functions of this system exerted in the central part of the face and around the eyes are: (1) to open and close the orifices (eyes, nose, and mouth), contributing to their functions; (2) to protect the eyes from sun, foreign bodies, etc.; (3) to contribute to facial expression, reflecting emotions (real, pretended, or theatrical) during social communication. These functions are exercised immediately and easily, without any opposition ('Wrinkling Ability') because of the presence of the Wrinkle Unit that gives (a) the site of refolding (the wrinkle is a waiting fold, ready to respond quickly at any moment for any skin mobility need) and (b) the appropriate skin tissue for extension or compression (this reservoir of tissue is measured by the parameter of WTRV). The Wrinkling Ability of a skin area is linked to the wrinkle's functions and can be measured by the parameter of 'Skin Tissue Volume Compressed around the Wrinkle' in mm(3) per 30 mm wrinkle during maximum wrinkling. The presence of wrinkles is a sign that the skin's 'Recovery Ability' has declined progressively with age. The skin's Recovery Ability is linked to undesirable cosmetic effects of ageing and wrinkling. This new Profilometric method can be applied in studies where the effectiveness of anti-wrinkle preparations or the cosmetic results of surgery modalities are tested, as well as in studies focused on the functional physiology of the Wrinkle Unit.     

An evaluation method for nanoscale wrinkle

In this paper, a spectrum-based wrinkling analysis method via two-dimensional Fourier transformation is proposed aiming to solve the difficulty of nanoscale wrinkle evaluation. It evaluates the wrinkle characteristics including wrinkling wavelength and direction simply using a single wrinkling image. Based on this method, the evaluation results of nanoscale wrinkle characteristics show agreement with the open experimental results within an error of 6%. It is also verified to be appropriate for the macro wrinkle evaluation without scale limitations. The spectrum-based wrinkling analysis is an effective method for nanoscale evaluation, which contributes to reveal the mechanism of nanoscale wrinkling.     

Single and networked CuO nanowires for highly sensitive p‐type semiconductor gas sensor applications

Development of high‐performance p‐type semiconductor based gas sensors exhibiting fast‐response/recovery times with ultra‐high response are of major importance for gas sensing applications. Recent reports demonstrated the excellent properties of p‐type semiconducting oxide for various practical applications, especially for selective oxidation of volatile organic compounds (VOCs). In this work, sensors based on CuO nanowire (NW) networks have been successfully fabricated via a simple thermal oxidation process on pre‐patterned Au/Cr pads. Our investigation demonstrates high impact of the process temperature on aspect ratio and density of copper oxide NWs. An optimal temperature for growth of thin and densely packed NWs was found to be at 425 °C. The fabricated sensors demonstrated ultra‐high gas response by a factor of 313 to ethanol vapour (100 ppm) at an operating temperature of 250 °C. High stability and repeatability of these sensors indicate the efficiency of p‐type oxide based gas sensors for selective detection of VOCs. A high‐performance nanodevice was fabricated in a FIB‐SEM system using a single CuO NW, demonstrating an ethanol response of 202 and rapid response and recovery of ～198 ms at room temperature. The involved gas sensing mechanism of CuO NW networks has been described. We consider that the presented results will be of a great interest for the development of higher‐performance p‐type semiconductor based sensors and bottom‐up nanotechnologies. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au‐assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation‐free III–V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Self-catalytic growth of horizontal and straight Si nanowires on Si substrates using a sputter deposition technique

We report on the growth of horizontal and straight Si nanowires (NWs) on Si substrate using sputter deposition of the Si layer followed by thermal annealing at 1000 °C and above. The growth of horizontal NWs was achieved without the use of any metal catalyst. Uniform cylindrical shaped Si NWs with a diameter in the range of 50–60 nm and a length of up to 8 μm were synthesized. The as-synthesized Si NWs have a Si core covered with a thin amorphous native oxide layer, as revealed by high resolution transmission electron microscopy. The aspect ratio of these Si NWs is in the range of 100–160. Micro-Raman studies on the NWs reveal a tensile strain on the Si NW core due to presence of a thin oxide layer. From the Raman shift, we calculate a strain of 1.0% for the catalyst free Si NW. FTIR analysis indicates the presence of interstitial oxygen atoms in the Si NWs, as expected from oxidation of Si NWs. For comparison, metal catalyst (Au) assisted Si NWs have also been grown on Si(100) substrate by a similar process. These NWs have a similar diameter and a marginally higher aspect ratio. A model for the growth mechanism of horizontal NWs is presented. This represents one of the first examples of direct horizontal growth of straight Si NWs on commonly used Si substrates suitable for nanoelectronic device fabrication.     

Friction of wrinkles

Sufficiently thin elastic sheets wrinkle when they are in contact with a small adhesive counterbody. Despite significant progress on the dynamics of wrinkle formation and morphology, little is known about how wrinkles impede the relative sliding motion of the counterbody. Using molecular dynamics we demonstrate that instabilities are likely to occur during sliding when the wrinkle pattern has asymmetries not present in the counterbody. The instabilities then cause Coulomb's friction law. The behavior can be rationalized in terms of simple models for multistable elastic manifolds.