ELECTRONIC AND OPTICAL PROPERTIES OF WURTZITE GaN:——A THEORETICAL APPROACH

The band structures of wurtzite GaN(α-GaN) are studied using the nearest and second-nearest neighbour semi-empirical tight-hinding method in sp³ s^* model. The calculated direct fundamental gap of α-GaN is 3.45 eV, which is in good agreement with the experimental data. The density of states and the imaginary pert of dielectric function (ε₂ (ω)) are evaluated to he in the regions - 10.0 - 12 eV and (1.0 - 10.0 eV, respectively. There are mainly three peaks at 6,4, 7,5, 8.4 eV, dominating the ε₂(ω) spectrum. The two components of the ε₂(ω) (i. e. ε_2xy(ω) and ε_2z(ω) ) are also calculated; and the real prat of dielectric function, reflectivity, absorption coefficient, and refractive index are all studied.     

LINEAR AND NONLINEAR INTERSUBBAND OPTICAL PROPERTIES IN A STEP QUANTUM WELL WITH AN APPLIED ELECTRIC FIELD

Within the framework of the effective-mass envelope-function theory , the field-dependent intersubband optical properties of a Al_0.4Ga_0.6As/Al_0.2Ga_0.8As/GaAs step quantum well are investigated theoretic ally based on the periodic boundary condition. A very large Stark shift occurs when the lowest subband electron remains confined to the small well while the hig her subband electron confined to the big well. The optical nonlinearity in a step well due to resonant intersubband transition(ISBT) is analyzed using a density matrix approach. The second-harmonic generation coefficient χ⁽²⁾_2ω and nonlinear optical rectification χ⁽²⁾₀ have also been investigated theoretically. The results show that the ISBT in a step well can generate very large second order optical nonlinearities,χ⁽²⁾₀ and χ⁽²⁾_2ω can be tuned by the electric field over a wide range.     

First-principles study of the optical properties of defect electronic structure and chalcopyrite CdGa2Te4

<正>The electronic and optical properties of the defect chalcopyrite CdGa₂Te₄ compound are studied based on the first-principles calculations.The band structure and density of states are calculated to discuss the electronic properties and orbital hybridized properties of the compound.The optical properties,including complex dielectric function,absorption coefficient,refractive index,reflectivity,and loss function,and the origin of spectral peaks are analysed based on the electronic structures.The presented results exhibit isotropic behaviours in a low and a high energy range and an anisotropic behaviour in an intermediate energy range.     

REFLECTION AND TRANSMISSION CHARACTERISTICS OF PLANE WAVES AT THE INTERFACE INCLUDING CHIRAL MEDIA

The reflection from and transmission characteristic of the plane waves are studied at the interface between media including chiral media. The co-polarized and cross-polarized reflection and transmission coefficients are derived from the chiral constitutive relations. Possible values of chirality admittance ζ_c are determined for fixed Brewster angles. In addition, the features of reflection and transmission in some typical cases including the normal inci dence case and that containing a mirror-conjugated medium are discussed in detail. For example, complex chiral parameters for minimal reflection coefficient in the case of normal incidence are optimized.     

FIRST-PRINCIPLE SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF THE ELECTRONIC STRUCTURES OF SHORT-PERIOD (GaAs)m(AlAs)n SUPERLATT1CES

With the local density approximation, the band structares of the short-period (GaAs)₁(AlAs)₁ and (GaAs)₂(AlAs)₁ superlattices are calculated by using the first-principle self-consistent pseudopotential method. The results show that the (GaAs)₁(AlAs)₁ superlattice is an indirect semiconductor, and the lowest conduction band state is at point R in the Brillouin zone; the (GaAs)₂(AlAs)₁ superlattice is a direct semiconductor and the lowest conduction band state is at point Γ. The squared matrix elements of transition are calculated. The pressure coefficients of energy gaps of the (GaAs)₁(AlAs)₁ and (GaAs)₂(AlAs)₁ superlattices are calculated and compared with those obtained by hydrostatic pressure experiments.     

MEASURE OF CHAOTIC ORBITS FOR STANDARD MAP

In this paper, the measure m₀ of the chaotic orbits in phase space for standard map is studied. As the nonlinearity parameter k→0, the contribution to chaotic measure m₀(k) is mainly from the stochastic layers near separatrices of resonance regions. As k→∞, the contribution to non-chaotic measure (1 - m₀(k)) is mainly from the accelerator modes. The behaviour of m₀(k) in these regions is studied analytically and numerically. For medial k value, the chaotic orbit forms a fat fractal, its boundary is a typical fractal with dimension D_b = 2-β. The behaviour of m₀(k) and D_b(k) is studied numerically.     

Intersubband transitions in In_xAl_(1-x)N/In_yGa_(1-y)N quantum well operating at 1.55 μm

In this paper, we theoretically study the effects of doping concentration NDand an external electric field on the intersubband transitions in InxAl(1-x)N/InyGa(1-y)N single quantum well by solving the Schr¨odinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions(E2- E1),(E3- E1), and(E3- E2) are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration NDexists for which the transition 0.8 eV(1.55 μm) is carried out. Finally, the dependence of the optical absorption α13(ω) on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.     

Optical properties of carbon nanotubes and BaTiO3 composite thin films

Multiwalled carbon nanotubes and BaTiO₃ composite films have been prepared by pulsed-laser deposition technique at room temperature and high temperature of 600℃, separately. The structures of the composite films are investigated by using scanning electron microscopy and x-ray diffraction. The optical behaviours of the samples produced at different temperatures are compared with Raman spectroscopy, and UV-visible absorption. And the observation by Z-scan technique reveals that the composite films have a larger optical nonlinearity, and the samples prepared at high temperatures have better transmittance and opposite sign imaginary part of optical third-order nonlinearity.     

Determination of the depth of formation of magnetooptical effects in CoNi films

The optical constants of CoNi films with magnetic properties that are nonuniform across their thickness are determined in reflected light by two methods, viz., optical and magnetooptical measurements. The values of the parameters L=λ/4πk and Z ₀=λ/8n, one of which (specifically, the one which has the smaller value at a given value of λ) determines the depth of formation of reflective magnetooptical effects (l _mo) according to the current theories, are calculated on the basis of the values obtained for the optical constants n and k of the films (λ is the wavelength of the light used, and n and k are the refractive index and the absorption coefficient of the magnet). It is established for the CoNi films investigated that l _mo is determined by L and varies from about 200 to 300 ? in the range 0.33 μm⩽λ⩽0.83 μm. In CoNi films, which are inhomogeneous across their thickness and are characterized by significant variation of the magnetic properties over distances ∼l _mo, variation of the form of the magnetization curves determined by measuring the equatorial Kerr effect is observed as λ increases. Zh. Tekh. Fiz. 68, 69–72 (February 1998)     

Intersubband transitions in InxAl（l-x）N/InyGa（l-y）N quantum well operating at 1.55 μm

In this paper, we theoretically study the effects of doping concentration ND and an external electric field on the intersubband transitions in InxAl（l-x）N/InyGa（l-y）N single quantum well by solving the Schrodinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions （E2 -El）, （E3 -El）, and （E3 -E2） are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration ND exists for which the transition 0.8 eV （1.55 μm） is carried out. Finally, the dependence of the optical absorption α13（ω） on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.