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1.
采用溶胶-凝胶方法制备ZnO纳米粉体,研究了两种不同溶剂下制备的纳米ZnO的荧光特性。结果表明两种氧化锌有相同的晶型和能带结构,其紫外发光相似,但其带间的可见发射表现出了巨大差异,其原因在于两溶剂的极性不同导致两体系凝胶、烧结的微过程不同,从而使两ZnO样品的表面态结构和布局发生变化。  相似文献   

2.
程兴旺  李祥  高院玲  于宙  龙雪  刘颖 《物理学报》2009,58(3):2018-2022
采用溶胶-凝胶法制备出具有室温铁磁性的Co掺杂的ZnO稀磁半导体材料. 通过对样品的结构、磁性和发光特性的研究发现,样品具有室温铁磁性,并发现其铁磁性源于磁性离子对ZnO中Zn离子的取代. 对不同温度制备的样品的磁性以及其发光特性的变化研究发现,样品的铁磁性与样品中锌间隙位(Zni)缺陷的密度有关. 关键词: ZnO 稀磁半导体 铁磁性  相似文献   

3.
采用溶胶-凝胶工艺,以氯化镧(LaCl3·7H2O)为前驱体,以甲醇和乙醇为溶剂,聚丙烯酸为分散剂,环氧丙烷为凝胶促进剂,分别合成两种性能不同的稀土La基气凝胶。采用扫描电子显微镜、傅里叶红外光谱仪、比表面积与孔径分析仪、力学性能测试仪对不同溶剂制备的两种稀土La基气凝胶的微观结构、成分、比表面积、孔径分布和力学性能进行了研究表征。结果表明,以甲醇和乙醇为溶剂制备的稀土La基气凝胶都具有纳米多孔材料的典型特征,由大量nm量级的球形和长条形颗粒胶连而成,孔洞结构丰富。以乙醇为溶剂制备的稀土La基气凝胶的网络骨架更纤细,孔洞更大,比表面积达到220m2·g-1,密度约为160mg·cm-3,但力学性能较差。而以甲醇为溶剂制备的稀土La基气凝胶的网络骨架更强壮,孔洞更小,比表面积达到95m2·g-1,密度约为350mg·cm-3,力学性能较好。样品性能上的差异可能是由甲醇的极性比乙醇的极性强引起的。  相似文献   

4.
经不同工艺和过程制备二氧化硅气凝胶,初步摸索出制备温度、溶剂、催化剂、反应时间最佳参数.在分析气凝胶干燥开裂的原因后,以三甲基氯硅烷(TMCS)为表面修饰剂,正己烷为干燥介质的表面改性工艺,一定程度控制了气凝胶的干燥收缩和开裂.在室温、常压下的通过不同的改性方案制备出四种不同气凝胶样品,揭示了改性条件、干燥温度对于气凝胶孔隙分布、微观结构的影响.  相似文献   

5.
ZnO/SiO2 复合薄膜的光学性能   总被引:5,自引:4,他引:1       下载免费PDF全文
采用溶胶-凝胶法在玻璃衬底上制备ZnO/SiO2复合薄膜,分别用XRD、TEM、SEM对样品的结构和形貌进行表征,并研究了不同ZnO含量对复合薄膜透过率及荧光特性的影响。结果表明,样品经500 ℃退火处理生成了SiO2和ZnO,其晶粒尺寸为18.7 nm,薄膜具有双层结构。复合薄膜的透过率随着其中ZnO含量的增加而降低,禁带宽度减小,光学吸收边红移。样品在355 nm波长激发下产生了384 nm的紫外发射峰和440 nm的蓝光发射带,并随ZnO含量的增加而增强,它们分别来自ZnO的电子-空穴复合发光和缺陷发光,及ZnO/SiO2复合薄膜双层结构的缺陷发光。  相似文献   

6.
邢兰俊  常永勤  邵长景  王琳  龙毅 《物理学报》2016,65(9):97302-097302
采用化学气相沉积方法在预制好电极的玻璃基底上制备出Sn掺杂ZnO薄膜和纯ZnO薄膜. 两种样品典型的形貌为四足状ZnO晶须, 其直径约为150-400 nm, 呈疏松状结构. 气敏测试结果显示Sn掺杂ZnO薄膜具有优良的室温气敏性, 并对乙醇具有良好的气敏选择性, 而纯ZnO薄膜在室温条件下对乙醇和丙酮均没有气敏响应. X射线衍射结果表明两种样品均为六方纤锌矿结构. Sn掺杂ZnO样品中没有出现Sn及其氧化物的衍射峰, 其衍射结果与纯ZnO样品对比, 衍射峰向小角度偏移. 光致发光结果表明, Sn掺杂ZnO薄膜与纯ZnO薄膜均出现紫外发光峰和缺陷发光峰, 但是Sn的掺杂使得ZnO的缺陷发光峰明显增强. 将Sn掺杂ZnO样品在空气中退火后, 其室温气敏性消失, 说明Sn掺杂ZnO样品的室温气敏性可能与其缺陷含量高有关. 采用自由电子散射模型解释了Sn掺杂ZnO薄膜的室温气敏机理.  相似文献   

7.
热处理参数对溶胶-凝胶法制备氧化锌薄膜特性的影响   总被引:11,自引:0,他引:11       下载免费PDF全文
采用溶胶-凝胶旋涂法在Si(111)衬底上生长了ZnO薄膜,并用荧光光谱、原子力显微镜和XRD对ZnO薄膜样品进行了分析.结果表明,溶胶-凝胶旋涂法制备的ZnO薄膜为纤锌矿结构,其c轴取向程度与热处理温度有很大的关系.当热处理温度小于550℃时,氧化锌薄膜在室温下均有较强的紫外带边发射峰,而可见波段的发射很弱;当热处理温度高于550℃时,可见波段发射明显增强.对经过不同时间热处理的ZnO薄膜样品分析表明,氧化锌薄膜的荧光特性及表面形貌与热处理时间也有很大关系,时间过短可见波段的发射较强,但时间过长会导致晶 关键词: ZnO薄膜 光致发光  相似文献   

8.
 利用溶胶-凝胶法制备出了纳米晶ZnO与含有3%摩尔分数SnO2的ZnO/SnO2复合材料,在六面顶压机上对制备出的两种样品进行了室温下、6GPa的高压处理。采用X射线衍射(XRD)、透射电子显微镜(TEM)和光致荧光谱(PL)等方法,对高压处理前后样品的结构和发光性质进行了表征。结果表明:高压处理后回收到的纳米晶ZnO和ZnO/SnO2复合材料的平均粒径分别减小5.9%和26.3%;高压处理后ZnO和ZnO/SnO2复合材料光致发光谱的发光带强度都有所降低,但ZnO/SnO2复合材料发光带强度降低幅度比纯ZnO小,对产生这些现象的原因进行了讨论。  相似文献   

9.
通过烧结法和溶胶凝胶法分别获得ZnO掺杂和Fe掺杂的SnO_2材料,分析2种掺杂对半导体SnO_2结构和性能的影响。实验结果表明,适量的ZnO掺杂可以提高材料的烧结性能;同时,在一定掺杂浓度下材料的的非线性系数和压敏电压均随温度升高先增大后减小;在1 450℃烧结的掺入0.5 mol%ZnO的材料烧结性最好,非线性系数最高,压敏电压最大;另一方面,Fe掺杂降低了SnO_2纳米颗粒的结晶度;溶胶凝胶后经水热法制备的样品随Fe掺杂浓度增加的变化缓慢,样品更稳定。  相似文献   

10.
ZnO:V薄膜后退火处理前后的微结构与发光特性   总被引:1,自引:2,他引:1       下载免费PDF全文
张丽亭  魏凌  张杨  张伟风 《发光学报》2007,28(4):561-565
利用溶胶-凝胶(Sol-gel)法在单晶硅(100)衬底上分别制备了ZnO:V薄膜和纯ZnO薄膜。为进一步研究后退火对ZnO:V薄膜结构和发光性质的影响,在两段式快速退火后又在800℃下进行了后退火处理。X射线衍射的结果表明:后退火处理前,钒(V)的掺入使ZnO结晶质量变差,而800℃退火处理后,从ZnO的衍射峰中可以看出,相对于无V杂样品其结晶质量变好。扫描电子显微镜形貌图中可以看出制备的样品薄膜颗粒大小均匀,薄膜致密度较高。光致发光(PL)谱的研究表明:ZnO:V薄膜在800℃退火处理后,紫外和绿带发光峰均增强,但紫外发光峰增强得更多;与同样条件下制备的纯ZnO薄膜的PL谱比较,发现V掺杂后样品的紫外激子复合发光峰的强度明显增强且峰位发生蓝移,而缺陷引起的绿带发光峰的强度降低。  相似文献   

11.
In the current work, zinc oxide (ZnO) nano/microstructures are synthesized using a modified thermal-evaporation process by introducing germanium oxide (GeO2) powder mixed with metallic Zn powder as the raw material. Without the use of any catalyst and oxygen flow in the furnace system, GeO2 is utilized to provide an oxygen source for the growth of ZnO structure. The samples are treated by different temperatures ranging from 500 to 900 °C. Morphology, phase structure, and photoluminescence properties are investigated by scanning electron microscopy (SEM), X-ray diffractometer (XRD) and photoluminescence (PL) spectrometer. The structures and morphologies of the samples were found to vary with growth temperature. The XRD diffraction peaks show that the films grown at temperature from 600 to 800 °C consist of hexagonal wurtzite ZnO structures. Room-temperature PL measurement revealed ZnO spectra representing two bands: near-band-edge emission in the ultraviolet (UV) region and broad deep-level emission centered at about 500 nm. The strong UV emission in the PL spectra indicates that the GeO2 supplies sufficient oxygen for formation of ZnO structures with few oxygen vacancies. The growth mechanism and the roles of GeO2 for formation of ZnO structures are discussed in detail.  相似文献   

12.
ZnO nanoparticles and ZnO encapsulated with polyethylene glycol (PEG) was synthesized using zinc acetate as a precursor at low temperature and characterized by different techniques. The influence of the types of solvent, synthesis parameters, and PEG encapsulation on the crystallization, the surface morphology, and the luminescent properties of ZnO nanoparticles prepared by the sol–gel process were investigated. The influence of different addition molar masses of the PEG during the synthesis on the ZnO emission peaks was systematically monitored. The crystallinity, the surface morphology, and the photoluminescence (PL) properties of ZnO depended highly on the synthesis process and PEG encapsulation. X-ray diffraction (XRD) spectra of ZnO nanoparticles show that all the peaks corresponding to the various planes of wurtzite ZnO indicate the formation of a single phase. The absorption edges of these ZnO nanoparticles are shifted by additions of the PEG polymer. The photoluminescence (PL) characterization of the ZnO nanostructures exhibited a broad emission in the visible range with maximum peak at 450 and/or 560 nm.  相似文献   

13.
通过低温光致发光(PL)谱研究氢化对ZnO发光性质的影响。氢通过一个直流等离子体发生装置引入到ZnO晶体。研究发现氢的引入影响了束缚激子的相对发光强度,特别是I4峰(3.363eV)的强度增加和3.366eV峰出现。比较未氢化样品,氢化样品PL谱显示不同的温度依赖。  相似文献   

14.
采用原子层沉积技术(ALD),以二乙基锌和水为前驱体,在衬底温度分别为110和190℃的条件下制备了致密的氧化锌纳米薄膜。采用X射线光电子能谱,荧光光谱和椭偏仪等表征手段对薄膜的成分和光学性质进行了研究。结果表明,随着沉积温度的增加,氧化锌薄膜内—OH含量降低,说明氧化锌薄膜生长过程中的化学反应更加完全;另外,沉积温度增加后,薄膜在365nm处的激子发射峰出现了明显的增强,同时可见光区的荧光发射峰消失,表明薄膜内的缺陷态减少。随着成膜质量的提高,氧化锌薄膜的电子迁移率从25提高至32cm~2·(V·S)~(-1)。椭偏测量的拟合结果表明,在375~800nm的波长范围内,氧化锌薄膜的折射率逐渐从2.33降至1.9,呈现出明显的色散现象;另外,不同温度下制备的氧化锌薄膜光学带隙均为3.27eV左右,这说明沉积温度对薄膜的带隙没有明显影响。  相似文献   

15.
退火温度对ZnO薄膜结构和发光特性的影响   总被引:16,自引:0,他引:16       下载免费PDF全文
采用反应射频磁控溅射法在 Si(100)基片上制备了高c轴择优取向的ZnO薄膜,研究了退火温度对ZnO薄膜的晶粒尺度、应力状态、成分和发光光谱的影响,探讨了ZnO薄膜的紫外发光光谱和可见发光光谱与薄膜的微观状态之间的关系.研究结果显示,在600—1000℃退火温度范围内,退火对薄膜的织构取向的影响较小,但薄膜的应力状态和成分有比较明显的变化.室温下光致发光光谱分析发现,薄膜的近紫外光谱特征与薄膜的晶粒尺度和缺陷状态之间存在着明显的对应关系;而近紫外光谱随退火温度升高所呈现的整体峰位红移是各激子峰相对比例变 关键词: ZnO薄膜 退火 光致发光 射频反应磁控溅射 可见光发射  相似文献   

16.
The absorption and photoluminescence (PL) spectra of MEH-PPV: ZnO composite films have been investigated at different concentrations of ZnO nanoparticles and at different temperatures (in the case of PL). It has been shown that, at 297 K, with increasing concentration of ZnO nanoparticles in the composite, the intensity of the PL lines of MEH-PPV decreases, whereas the intensity of the PL lines of ZnO increases. At a relatively low concentration of ZnO nanoparticles, a decrease in the temperature leads to an increase in the intensity of PL lines associated with MEH-PPV and ZnO, whereas at higher concentrations of ZnO nanoparticles, the intensity of these lines decreases. This is accompanied by a slight shift in the maximum of the PL toward the infrared (IR) region and a narrowing of the PL line of MEH-PPV with a decrease in the temperature and with an increase in the ZnO concentration. The mechanism of energy transfer in composite systems consisting of a polymer and inorganic nanoparticles that can be responsible for the observed effects has been discussed.  相似文献   

17.
LiGaO2衬底上ZnO外延膜的结构与光学特性   总被引:3,自引:2,他引:1  
黄涛华  周圣明  滕浩  林辉  王军 《光学学报》2008,28(7):1420-1424
采用磁控溅射法在(001),(100)及(010)LiGaO2衬底上制备了ZnO薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、透过光谱以及光致发光谱(PL)对薄膜的结构、形貌及光学性质进行了表征.结果表明LiGaO2衬底不同晶面上制备的ZnO薄膜具有不同的择优取向,在(001)、(100)及(010)LiGaO2上分别获得了[001]、[1100]及[1120]取向的ZnO薄膜;不同取向的ZnO薄膜表面形貌差异较大;薄膜在可见光波段具有较高的透过率;在ZnO薄膜的光致发光谱中只观察到了位于378 nm的紫外发射峰,而深能级发射几乎观察不到,(1100)取向的薄膜紫外发射峰强度最大,半高宽也最小,薄膜光致发光件质的差异丰要和晶粒尺寸有关.  相似文献   

18.
ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition (MOCVD) at different total gas flow rates. The current versus voltage and temperature (I - V - T) characteristics, the deep-level transient spectroscopy (DLTS) and the photoluminescence (PL) spectra of the samples were measured. DLTS shows two deep-level centres of E1 (Ec-0.13±0.02eV) and E2 (Ec-0.43±0.05eV) in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.  相似文献   

19.
The temperature-dependent photoluminescence (PL) characteristics of zinc oxide (ZnO) embedded into the voids of synthetic opal were studied. ZnO was infiltrated into opal from aqueous solution with zinc nitrate precursor followed by thermal annealing. The PL spectra of the ZnO powder exhibit very high and broad emission peaks in the green region due to crystal defects, such as oxygen vacancies and zinc ion interstitials. In contrast to the PL spectra of ZnO powder, nanocrystals of ZnO embedded into the voids of FCC packed opal matrix exhibit dominant ultraviolet (UV)-blue and rapidly decreasing green PL emissions with decreasing temperature. The temperature-dependent PL characteristics show that the green band suppression in the ZnO nanocrystals is due to the influence of photonic crystal. The infiltration of nanoparticles into synthetic opal may be used for the fabrication of polycrystalline ZnO with dominant UV-blue PL. These results indicate that the luminescent materials embedded into photonic crystal may be promising for the fabrication of the RGB pixels in full-color displays.  相似文献   

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