半导体瞬态问题的修正迎风有限体积格式

半导体器件的瞬时状态由包含三个拟线性偏微分方程所组成的方程组的初边值问题来描述.其中电子位势方程足椭圆型的,电子和空穴浓度方程是对流扩散型的.对电子位势方程采用一次元有限体积法米逼近,对电子浓度和空穴浓度方程采用修正的迎风有限体积方法来逼近,并进行详细的理论分析,关于位势得到O(h Δt)阶的H1模误差估计结果,关于浓度得到O(h2 Δt)阶的L2模误差估计结果.最后,给出数值例子.     

半导体瞬态问题的混合迎风有限体积格式

半导体器件的瞬时状态由包含3个拟线性偏微分方程所组成的方程组的初边值问题来描述.在三角剖分的基础上,对椭圆型的电子位势方程采用混合有限体积元法来逼近,对对流扩散型的电子浓度和空穴浓度方程采用迎风有限体积元方法来逼近,并进行了详细的理论分析,得到了最优阶的误差估计结果.最后,针对混合有限体积元法和迎风有限体积元法分别单独使用以及两种方法结合使用的情形给出了不同的数值算例.     

三维热传导型半导体问题的特征混合元方法和分析

本文研究三维热传导型半导体态问题的特征混合元方法及其理论分析,其数学模型是一类非线性偏微分方程的初边值问题,对电子位势方程提出混合元逼近,对电子,空穴浓度方程笔挺表限元逼近;对热传导方程采用对时间向后差分的Ｇａｌｅｒｋｉｎ逼近,应用微分方程先验估计理论和技巧得到了最优阶Ｌ＾２误差估计。     

三维热传导型半导体问题的特征有限元方法和分析

本文研究三维热传导型半导体瞬态问题的特征有限元方法及其理论分析,其数学模型是一类非线性偏微分方程的初边值问题,对电子位势方程提出Ｇａｌｅｒｋｉｎ逼近;对电子,空穴浓度方程采用特征有限元逼近;对热传导方程采用对时间向后差分的Ｇａｌｅｒｋｉｎ逼近．应用微分方程先验估计理论和技巧得到了最优阶Ｌ＾２误差估计。     

三维热传导型半导体问题的交替方向特征有限元方法

提出交替方向特征有限元方法,对电场位势方程采用混合元格式,对电子,空穴浓度方程采用交替方向特征有限元格式,对温度方程提出交替方向格式.应用向量积计算及先验估计理论和技巧,得到最佳的L2误差估计.     

半导体问题的交替方向有限元方法

该文用交替方向有限元方法求解半导体问题的Energy Trans port (ET)模型。对模型中椭圆型的电子位势方程采用交替方向迭代法，对流占优扩散的电子浓度和空穴浓度方程采用特征交替方向有限元方法，热传导方程利用Patch逼近采用交替方向有限元方法求解。利用微分方程的先验估计理论和技巧，分别得到了椭圆型方程和抛物型方程的最优H+1和L+2误差估计。     

三维半导体器件问题在时空局部加密复合网格上的有限差分格式

半导体器件的瞬时状态由三个方程组成的非线性偏微分方程组的初边值问题决定,电子位势方程是椭圆型的,电子和空穴浓度方程是抛物型的．依据实际数值模拟的需要,提出了一类三维半导体问题在时间和空间上进行局部加密的复合网格上的有限差分形式,并给出了电子和空穴浓度的最大模误差估计,最后给出了数值算例．     

半导体器件数值模拟的混合元逼近

半导体器件瞬时状态的模型由三个非线性偏微分方程组所决定.一个是关于电子位势的方程外型是椭圆的,另两个是关于电子和空穴浓度方程外型是抛物的,电子位势通过其电场强度在浓度方程中出现,以及相应的边界和初始条件.我们讨论平面区域Ω上的问题:     

半导体器件瞬态模拟的对称正定混合元方法

提出具有对称正定特性的混合元格式求解非稳态半导体器件瞬态模拟问题。提出一个最小二乘混合元方法、一个新的具有分裂和对称正定性质的混合元格式和一个解经典混合元方程的对称正定失窃工格式求解电场位势和电场强度方程;提出一个最小二乘混合元格式求解关于电子与空穴浓度的非稳态对流扩散方程,浓度函数和流函数被同时求解;采用标准的有限元方法求解热传导方程。建立了误差分析理论。     

热传导型半导体瞬态问题的迎风有限体积元方法

半导体瞬态问题的数学模型是由四个方程组成的非线性偏微分方程组的初边值问题所决定．其中电子浓度和空穴浓度方程往往是对流占优扩散问题,普通的方法已不适用,为此本文用迎风格式处理对流项部分,提出一种全离散迎风有限体积元方法,并进行收敛性分析,在最一般的情况下得到了一阶精度L2模误差估计结果．     

UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE

The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind     

IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

The transient behavior of a semiconductor device consists of a Poisson equa-tion for the electric potential and of two nonlinear parabolic equations for the electrondensity and hole density.The electric potential equation is discretized by a mixed finiteelement method. The electron and hole density equations are treated by implicit-explicitmultistep finite element methods. The schemes are very efficient. The optimal order errorestimates both in time and space are derived.     

三维热传导型半导体器件问题在局部加密网格上的有限差分格式

局部网格加密技术能很好地解决局部性很强的问题,半导体器件问题的解在半导体的p-n结附近有很强的局部性质.热传导型半导体器件瞬态问题的数学模型由四个方程组成的非线性偏微分方程组的初边值问题决定,电场位势方程是椭圆型的,电子和空穴浓度方程是抛物型的,温度方程是热传导型的.依据实际数值模拟的需要,提出了一类三维热传导型半导体问题在时间上进行局部加密的复合网格上的有限差分格式,并给出了电子、空穴浓度和温度的最大模误差估计以及数值算例.这些研究结果对半导体器件数值模拟的算法理论、实际应用和工程软件系统的研制,均具有重要的价值.     

An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method

The mathematical model for semiconductor devices in three space dimensions are numerically discretized. The system consists of three quasi-linear partial differential equations about three physical variables: the electrostatic potential, the electron concentration and the hole concentration. We use standard mixed finite element method to approximate the elliptic electrostatic potential equation. For the two convection-dominated concentration equations, a characteristics-mixed finite element method is presented. The scheme is locally conservative. The optimal $L^2$-norm error estimates are derived by the aid of a post-processing step. Finally, numerical experiments are presented to validate the theoretical analysis.     

A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis

The mathematical system is formulated by four partial differential equations combined with initialboundary value conditions to describe transient behavior of three-dimensional semiconductor device with heat conduction. The first equation of an elliptic type is defined with respect to the electric potential, the successive two equations of convection dominated diffusion type are given to define the electron concentration and the hole concentration, and the fourth equation of heat conductor is for the temperature. The electric potential appears in the equations of electron concentration, hole concentration and the temperature in the formation of the intensity. A mass conservative numerical approximation of the electric potential is presented by using the mixed finite volume element, and the accuracy of computation of the electric intensity is improved one order. The method of characteristic fractional step difference is applied to discretize the other three equations, where the hyperbolic terms are approximated by a difference quotient in the characteristics and the diffusion terms are discretized by the method of fractional step difference. The computation of three-dimensional problem works efficiently by dividing it into three one-dimensional subproblems and every subproblem is solved by the method of speedup in parallel. Using a pair of different grids (coarse partition and refined partition), piecewise threefold quadratic interpolation, variation theory, multiplicative commutation rule of differential operators, mathematical induction and priori estimates theory and special technique of differential equations, we derive an optimal second order estimate in L²-norm. This numerical method is valuable in the simulation of semiconductor device theoretically and actually, and gives a powerful tool to solve the international problem presented by J. Douglas, Jr.     

A finite difference scheme for two-dimensional semiconductor device of heat conduction on composite triangular grids

The momentary state of a semiconductor device of heat conduction is described by a system of four nonlinear partial differential equations. One elliptic equation is for the electrostatic, two parabolic equations are for the electron concentration and the hole concentration, and one heat exchange equation is for the temperature. According to the necessary of practical numerical simulations and based on the balance equation, finite difference schemes for two-dimensional transient behavior of a semiconductor device of heat conduction on composite triangular grids are constructed. Studying their stability and convergence properties, the error estimate in the energy norm is obtained. Finally, a numerical example is given.     

A MIXED FINITE ELEMENT METHOD FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

The transient behavior of a semiconductor device is described by a system of three quasilinear partial differential equations. One is elliptic in form for the electric potential and the other two are parabolic in form for the conservation of electron and hole concentrations. The electric potential equation is discretized by a mixed finite element method. The electron and hole density equations are treated by a Galerkin method that applies a variant of the method of characteristics to the transport terms. Optimal order convergence analysis in L2 is given for the proposed method.