Novel neutral hexacoordinate benzamidinatosilicon(IV) complexes with SiN3OF2, SiN3OCl2, SiN3OBr2, SiN5O and SiN3O3 skeletons

The neutral pentacoordinate monoamidinatosilicon(IV) complex 1 (SiN(2)Cl(3) skeleton) and the neutral hexacoordinate monoamidinatosilicon(IV) complexes 2-9 (SiN(3)OF(2), SiN(3)OCl(2), SiN(3)OBr(2), SiN(5)O and SiN(3)O(3) skeletons) were synthesised and characterised by elemental analyses, single-crystal X-ray diffraction (except for 1) and NMR spectroscopy in the solid state and in solution. Compounds 2-9 contain one bidentate monoanionic N,N'-diisopropylbenzamidinato ligand, one bidentate monoanionic ligand derived from 8-hydroxyquinoline and (i) two identical monoanionic ligands (F, Cl, Br, N(3), NCO, NCS, OSO(2)CF(3)) or (ii) one bidentate dianionic benzene-1,2-diolato ligand. The dynamic behavior of 2-4 (SiN(3)OX(2) skeleton; X = F, Cl, Br) and 9 (SiN(3)O(3)) in solution was studied by multinuclear variable-temperature NMR experiments. Compound 1 was synthesised by reaction of SiCl(4) with the corresponding lithium amidinate, and compound 2 was obtained by reaction of 1 with 8-hydroxyquinoline and triethylamine. Compound 2 served as the starting material in the syntheses of 3-9, in which the two chloro ligands of 2 were substituted by two identical (pseudo)halogeno ligands, two trifluoromethanesulfonato ligands or one benzene-1,2-diolato ligand. Compounds 3 and 4 contain the novel SiN(3)OBr(2) and SiN(3)OF(2) skeletons, while compounds 5-7 are the first neutral hexacoordinate silicon(IV) complexes with an SiN(5)O skeleton.     

Data-Driven Investigation of Monosilane and Ammonia Co-Pyrolysis to Silicon-Nitride-Based Ceramic Nanomaterials

With its high strength, high thermal stability, low density, and high electrical resistance, silicon-nitride-based ceramics have been widely used as gate insulating layers, oxidation masks, and passivation layers. Employing SiN nanomaterials in anode applications also improves rate performances and cycling stability of the lithium-ion batteries. However, a fundamental understanding of the SiN synthetic process remains elusive. SiN gas-phase synthesis can be tailored with a comprehensive understanding of the underlying thermodynamics. In comparison to the characterization data available for solid-state SiN materials, high-level theoretical studies on gas-phase materials possessing Si−N bonds and comprehensive investigation of the SiN chemistry, particularly for nanoclusters, are very uncommon. Thus, we performed a theoretical study of Si and SiN alloy acyclic hydrides and polycyclic clusters to predict electronic structures and thermochemistry using quantum chemical calculation and statistical thermodynamics. Electronic properties by way of highest and lowest occupied molecular orbital energy gap and natural bonding orbitals analysis were calculated to explore the influence of elemental composition and geometry on the stability. Our studies provide characteristic data of SiN species for a data-driven approach to map the design space for discovery of novel silicon-nitride-based ceramic materials for advanced electronic and coating applications.     

一种新型有机硅离子液体电解液在超级电容中的应用

设计合成了一种新型有机硅室温离子液体(SiN1IL), 并对其化学结构和电化学窗口进行表征, 通过与具有高介电常数的丙烯碳酸酯(PC)/低粘度的乙腈(AN)匹配组成电解液, 其离子电导率达到商业实际应用的要求(19.6 mS·cm^-1). 对以活性炭(AC)为对称电极的超级电容器的电化学性能测试表明, SiN1IL 基电解液与活性炭有很好的界面相容性, 其高倍率充放电、阻抗性能优于商用四乙基四氟硼酸铵(Et₄NBF₄)/PC 电解液, 在电流密度为1000 mA·g^-1的条件下, 工作电压为2.7 V, 其比电容为108 F·g^-1.     

Synthesis of ((t)Bu3SiNH)2ClW triple bond WCl(NHSi(t)Bu3)2 and its degradation via NH bond activation.

Treatment of NaW2Cl7(THF)5 with 4 equiv of (t)Bu3SiNHLi afforded the C2 W(III) dimer [((t)Bu3SiNH)2WCl]2 (1, d(W triple bond W) = 2.337(2) A), which is a rare, primary amide M2X4Y2 species. Its degradation provided evidence of NH bond activation by the ditungsten bond. Addition of 2 equiv of (t)Bu3SiNHLi or TlOSi(t)Bu3 to 1 yielded H2 and hydride ((t)Bu3SiN)2((t)Bu3SiNH)WH (2, d(WH) = 1.67(3) A) or ((t)Bu3SiN)2((t)Bu3SiO)WH (3). Thermolysis (60 degrees C, 16 h) of 1 in py gave ((t)Bu3SiN)2WHCl(py) (4-py, 40-50%), ((t)Bu3SiN)2WCl2(py) (6-py, 10%), and ((t)Bu3SiN)2HW(mu-Cl)(mu-H)2W(NSi(t)Bu3)py2 (5-py2, 5%), whereas thermolysis in DME produced ((t)Bu3SiN)2WCl(OMe) (7, 30%), ((t)Bu3SiN)2WCl2 (6, 20%), and ((t)Bu3SiN)2HW(mu-Cl)(mu-H)2W(NSi(t)Bu3)DME (5-DME, 3%). Compound 7 was independently produced via thermolysis of 4-py and DME (-MeOEt, -py), and THF and ethylene oxide addition to hydride 2 gave ((t)Bu3SiN)2((t)Bu3SiNH)WO(n)Bu (8) and ((t)Bu3SiN)2((t)Bu3SiNH)WOEt (9), respectively. Dichloride 6 was isolated from SnCl4 treatment of 1 with the loss of H2. Sequential NH bond activations by the W2 core lead to "((t)Bu3SiN)2WHCl" (4) and subsequent thermal degradation products. Thermolysis of 1 in the presence of H2C=CH(t)Bu and PhC triple bond CPh trapped 4 and generated ((t)Bu3SiN)2W((neo)Hex)Cl (10) and a approximately 6:1 mixture of ((t)Bu3SiN)2WCl(cis-CPh=CPhH) (11-cis) and ((t)Bu(3)SiN)2WCl(trans-CPh=CPhH) (11-trans), respectively. Thermolysis of the latter mixture afforded ((t)Bu3SiNH)((t)Bu3SiN)WCl(eta2-PhCCPh) (12) as the major constituent. Alkylation of 1 with MeMgBr produced ((t)Bu3SiN)2W(CH3)2 (13), as did addition of 2 equiv of MeMgBr to 6. X-ray crystal structure determinations of 1, 2, 5-py2, 6-py, 11-trans, and 12 confirmed spectroscopic identifications. A general mechanism that features a sequence of NH activations to generate 4, followed by chloride metathesis, olefin insertion, etc., explains the formation of all products.     

Characterization of SiN and other transient species in a silicon tetrachloride–nitrogen discharge

Infrared diode laser absorption spectroscopy has been used to detect the A–X electronic spectrum of diatomic SiN in a SiCl₄/N₂ plasma. The intensity of the SiN transitions with respect to the ratio of SiCl₄:N₂ flow rate was investigated. A correlation between intense signals of SiN and the optimal growth conditions for a-SiN films reported in literature was found. This observation lends support to the importance of diatomic SiN as a film precursor. The electronic emission spectra of silicon-containing transient species were also recorded in the plasma. A brief discussion of the plasma reaction pathways of SiN is presented.     

On the electron affinity of SiN and spectroscopic constants of SiN(-)

Accurate spectroscopic constants and energetics were calculated for the two lowest-lying states of SiN and SiN- employing the coupled cluster methodology and very large basis sets (up to doubly augmented sextuple-zeta quality) accounting also for core/valence correlation, one-electron Douglas-Kroll-Hess relativistic effects, and atomic spin-orbit couplings. Our best estimate for the adiabatic electron affinity of SiN is 3.002 eV, in very good agreement with the recent, experimentally determined value of 2.949(8) eV. However, the calculated bond length of the SiN- X 1sigma+ state at the same level, r(e) = 1.5904 angstroms, is smaller than the indirectly extracted experimental value of 1.604(5) angstroms, pointing out that the latter value is either a bit overestimated or not as accurate as the +/- 0.005 angstroms error bar indicates. For the neutral SiN, all calculated data are in excellent agreement with previous accurate experimental results.     

Coupling of an aldehyde or ketone to pyridine mediated by a tungsten imido complex

The reactivity of W(NPh)(o-(Me3SiN)2C6H4)(py)2 and W(NPh)(o-(Me3SiN)2C6H4)(pic)2 (py=pyridine; pic=4-picoline) with unsaturated substrates has been investigated. Treatment of W(NPh)(o-(Me3SiN)2C6H4)(py)2 with diphenylacetylene or 2,3-dimethyl-1,3-butadiene generates W(NPh)(o-(Me3SiN)2C6H4)(eta2-PhCCPh) and W(NPh)(o-(Me3SiN)2C6H4)(eta4-CH2=C(Me)C(Me)=CH2), respectively, while the addition of ethylene to W(NPh)(o-(Me3SiN)2C6H4)(py)2 generates the known metallacycle W(NPh)(o-(Me3SiN)2C6H4)(CH2CH2CH2CH2). The addition of 2 equiv of acetone to W(NPh)(o-(Me3SiN)2C6H4)(pic)2 provides the azaoxymetallacycle W(NPh)(o-(Me3SiN)2C6H4)(OCH(Me)2)(OC(Me)2-o-C5H3N-p-Me), the result of acetone insertion into the ortho C-H bond of picoline. Similarily, the addition of 2 equiv of RC(O)H [R=Ph, tBu] to W(NPh)(o-(Me3SiN)2C6H4)(py)2 generates W(NPh)(o-(Me3SiN)2C6H4)(OCH2R)(OCHR-o-C5H4N) [R=Ph, tBu,]. In contrast, reaction between W(NPh)(o-(Me3SiN)2C6H4)(py)2 and 2-pyridine carboxaldehyde yields the diolate W(NPh)(o-(Me3SiN)2C6H4)(OCH(C5H4N)CH(C5H4N)O). The synthesis of W(NPh)(o-(Me3SiN)2C6H4)(PMe3)(py)(eta2-OC(H)C6H4-p-Me), formed by the addition of p-tolualdehyde to a mixture of W(NPh)(o-(Me3SiN)2C6H4)(py)2 and PMe3, suggests that an eta2-aldehyde intermediate is involved in the formation of the azaoxymetallacycle, while the isolation of W(NPh)(o-(Me3SiN)2C6H4)(Cl)(OC(Me)(CMe3)-o-C5H4N), formed by the reaction of pinacolone with W(NPh)(o-(Me3SiN)2C6H4)(py)2, in the presence of adventitious CH2Cl2, suggests that the reaction proceeds via the hydride W(NPh)(o-(Me3SiN)2C6H4)(H)(OC(Me)(CMe3)-o-C5H4N).     

Theoretical investigation of the mechanisms of reactions of H2CN and H2SiN with NO

The mechanisms of the reaction of H2XN (X = C, Si) with NO were studied at the level CCSD(T)/aug-cc-PVTZ//B3LYP/6-31++G(d,p). The results indicate that there are two most favorable reaction pathways in the reaction H2CN + NO that have similar energy barriers; these two pathways lead to the formation of HCN + HNO (P1) and H2CO + N2 (P3), with the calculated barriers 11.1 and 10.2 kcal/mol, respectively, with respect to the reactants (H2CN + NO). In the reaction H2SiN + NO the difference of the barriers in these two analogous pathways becomes large, and the preferable pathway shifts to the production of H2SiO + N2 (P3s), which has no barrier with respect to the reactants (H2SiN + NO). A direct reduction of NO into a stable and nontoxic nitrogen molecule with no energy input becomes possible. As a consequence, H2SiN might be an effective reagent to convert the reactive and toxic NO into a benign gas N2 in several NO-producing combustion systems. We offer a possible explanation of the differences between H2CN and H2SiN toward NO as well as the calculated potential energies for these reactions.     

Explicitly correlated treatment of H2NSi and H2SiN radicals: electronic structure calculations and rovibrational spectra

Various ab initio methods are used to compute the six dimensional potential energy surfaces (6D-PESs) of the ground states of the H(2)NSi and H(2)SiN radicals. They include standard coupled cluster (RCCSD(T)) techniques and the newly developed explicitly correlated RCCSD(T)-F12 methods. For H(2)NSi, the explicitly correlated techniques are viewed to provide data as accurate as the standard coupled cluster techniques, whereas small differences are noticed for H(2)SiN. These PESs are found to be very flat along the out-of-plane and some in-plane bending coordinates. Then, the analytic representations of these PESs are used to solve the nuclear motions by standard perturbation theory and variational calculations. For both isomers, a set of accurate spectroscopic parameters and the vibrational spectrum up to 4000 cm(-1) are predicted. In particular, the analysis of our results shows the occurrence of anharmonic resonances for H(2)SiN even at low energies.     

Formation and grain analysis of spin-cast magnetic nanoparticle monolayers

Ligand-stabilized magnetic nanoparticles (NPs) with diameters of 4-7 nm were spin-cast into monolayers on electron-transparent silicon nitride (SiN) substrates. SiN membranes facilitate detailed high-resolution characterization of the spin-cast monolayers by transmission electron microscopy (TEM) and approximate spin-casting onto wafers. Suspending the NPs in hexanes and pretreating the substrate with ultraviolet light and ozone (UVO) gives the best results. Computer-aided analysis of the arrays elucidates their grain structures, including identification of the grain boundaries and defects and measurements of the grain orientations and translational correlation lengths. Narrow NP size distributions result in close-packed arrays with minimal defects and large grains containing thousands of NPs. Edge dislocations, interstitials, vacancies, and overlapping NPs were observed. Deviations from close packing occur as the normalized standard deviation of the sample's size distribution increases above approximately 11%. Polydisperse size distributions and deviations from spherical NP shapes frustrate assembly and prevent ordered packing.     

Cell membranes suspended across nanoaperture arrays

We present a method for spreading large (>100 microm(2)) cell membrane fragments across nanoapertures in planar supports. Electron-beam and focused-ion-beam lithography were used to fabricate arrays of 50-600 nm diameter holes in free-standing silicon nitride (SiN) solid films 100-500 nm thick. By pressing adhering live cells onto the nanostructured SiN surface and then removing them, planar cell membrane sheets (CMSs) were transferred in a well-defined orientation onto the SiN support. We demonstrate the accessibility to both extracellular and intracellular surfaces of CMSs by targeting membrane constituents side-specifically with fluorescent markers. Our approach is of interest for studying ligand-receptor interactions using optical, electrical, and scanning probe techniques at the single-molecule level.     

Coordinatively unsaturated W(IV)-bis(pyridine) complexes, a reactive source of W(IV)

Addition of 2 equiv of a sigma-donor ligand (L = pyridine, 4-picoline, or quinoline) to complexes of the type [W(NPh)(eta(4)-arene)(o-(Me3SiN)2C6H4)] (arene = CH3CH2C6H5 (3), CH3CH2CH2C6H5 (4)) gave the W(IV)L2 compounds, [W(NPh)(o-(Me3SiN)2C6H4)(C5H5N)2] (5), [W(NPh)(o-(Me3SiN)2C6H4)(p-C6H7N)2] (6), and [W(NPh)(o-(Me3SiN)2C6H4)(C9H7N)2] (7). Synthesis of compounds 5 and 6 by Na degrees reduction of [W(NPh)(o-(Me3SiN)2C6H4)Cl2] in the presence of 3 equiv of L (L = 5, pyridine or 6, 4-picoline) is also presented. Compounds 5, 6, and 7 display hindered rotation of the donor ligands about the W-N bonds, resulting from a steric interaction with the Me3Si groups of the diamide ligand. The coordinative unsaturation of 5 and 6 has also been explored. Compounds 5 and 6 readily react with either CO and PMe3 to generated the six coordinate complexes [W(NPh)(o-(Me3SiN)2C6H4)(C5H5N)2(CO)] (8a), [W(NPh)(o-(Me3SiN)2C6H4)(C6H7N)2(CO)] (8b), [W(NPh)(o-(Me3SiN)2C6H4)(C5H5N)(PMe3)2] (10a), and [W(NPh)(o-(Me3SiN)2C6H4)(C6H7N)(PMe3)2] (10b), respectively.     

The influence of dielectric layer on the thermal boundary resistance of GaN-on-diamond substrate

The cooling behavior of GaN-on-diamond substrate can be enhanced by reducing the thermal boundary resistance (TBR), which is mainly determined by the nature of interlayer. Although SiN film is considered as the primary candidate of dielectric layer, it is still needed to be optimized. In order to facilitate the understanding of the influence of dielectric layer on the TBR of GaN-on-Diamond substrate, aluminum nitride (AlN), and silicon nitride (SiN) film were compared systematically, both of which are 100 nm. The time-domain thermoreflectance (TDTR) measurements, adhesion evaluation, and microstructural analysis methods were adopted to analyse these two interlayers. The results show the TBR of SiN interlayer is as low as 38.5 ± 2.4 m²K GW⁻¹, comparing with the value of 56.4 ± 5.5 m²K GW⁻¹ for AlN interlayer. The difference of TBR between these two interlayers is elucidated by the diamond nucleation density, and the adhesion between the diamond film and GaN substrate, both of which are affected by the surface charge and chemical groups of the dielectric layer.     

The synthesis and reactivity of a molybdenum (IV) stretched-dihydrogen complex

Reaction of [Mo(NPh)(PMe3)3(o-(Me3SiN)2C6H4)] (1) with molecular hydrogen (ca. 1 atm) at -10 degrees C in toluene-d8 results in the formation of dihydrogen complex [Mo(NPh)(PMe3)2(H2)(o-(Me3SiN)2C6H4)] (2) by 1H and 31P NMR spectroscopy. In solution at -50 degrees C 1 and 2 are present in a 1:3 ratio, respectively. The nature of dihydrogen ligand bonding in 2 was probed by T1 analysis and analysis of the JH-D coupling constant in the deuterium hydride isotopomer of 2 giving H-H distances of 1.18 A and 1.17 A, respectively. When allowed to warm to 30 degrees C, 2 reacts affording [Mo(NPh)(PMe3)3(o-(Me3SiN)(NH)C6H4)] (3) over a 1 h period. The X-ray structures of 1 and 3 are reported.     

Matrix isolation infrared observation of HxSi(N2)y (x = 0, 1, 2 and y = 1, 2) transient species using a 121-nm vacuum ultraviolet photolysis source

Vacuum ultraviolet photolysis (121.6 nm) of silane in a nitrogen matrix at 12 K leads to the observation of several transient species, which have been characterized using Fourier transform infrared spectroscopy. Four transient species containing silicon and nitrogen have been observed (SiN2, Si(N2)2, HSiN2, and H2SiN2), and one transient species containing only silicon and hydrogen has been observed. The assignment of the infrared bands due to each of these species is accomplished by performing isotopic substitution experiments (SiD4, 15N2, and mixtures with SiH4 and 14N2), matrix annealing experiments, UV-visible photolysis experiments, by comparison with previous experimental matrix isolation frequencies, where available, and for HSiN2 and H2SiN2 by comparison to B3LYP/aug-cc-pVTZ-calculated vibrational frequencies. The observation and infrared assignment of the HSiN2 and H2SiN2 molecules in these experiments is significant in that HSiN2 has not been previously reported in the matrix isolation literature, and H2SiN2 has only been reported once previously by a different route of formation. The energetics of the overall formation pathways for the molecules observed in these experiments is discussed using B3LYP/aug-cc-pVTZ calculations.     

Synthesis and characterization of mixed-substituent N-silylphosphoranimines

The preparation of a large series of new N-silyl-P-alkylphosphoranimines and their (silylamino)phosphine precursors is reported. Oxidative bromination of the P-functional (silylamino)phosphines, (Me(3)Si)(2)NP(R)X [R = n-Pr, n-Bu, i-Pr, t-Bu; X = Br, OR' (R' = CH(2)CF(3), Ph)], occurred smoothly at 0 degrees C and afforded the desired P-bromophosphoranimines, Me(3)SiN=P(R)(X)Br. Nucleophilic substitution reactions of the P-dibromo members of this series with LiOR' gave the corresponding P-trifluoroethoxy- and P-phenoxyphosphoranimines, Me(3)SiN=P(R)(OR')(2) (R' = CH(2)CF(3), Ph). All of these N-silylphosphoranimines, which are potential precursors to new cyclic and/or polymeric phosphazenes, were obtained as thermally stable, distillable liquids and were characterized by NMR ((1)H, (13)C, and (31)P) spectroscopy and elemental analysis.     

Investigation of the surface topography for the characterization of microstructures of amorphous SiNx-coatings

SiN(x)-coatings have been deposited by reactive magnetron sputtering. Gas pressure and film thickness have been varied. Scanning electron microsopic views of the cross sections show a columnar structure as well as polycrystalline films varying with deposition parameters. For quantitative comparisons of the film morphology an average column diameter has been used as a characteristic value obtained from TEM images. Similar results have been obtained by scanning tunneling microscope avoiding a large expenditure of preparation. Scanning tunneling microscopy is suitable for investigations of the fractal nature of top surface of thin films and to determine the height function of thin SiN(x)-coatings on silicon wafers directly. Computer simulations of sputter processes allow to discuss the evolution of microstructures qualitatively.     

P-Amino-cyclopentadienylidene-phosphoranes versus P-cyclopentadienyl-iminophosphoranes--tautomeric protic forms of a new bidentate CpPN ligand system

The Staudinger reaction of cyclopentadienyl-phosphanes C5H5-PMe2 (P1), C5H5-PPh2 (P2), and C5Me4H-PMe2 (P3) with azides Me3SiN3, 1-AdN3 (Ad = 1-adamantyl) and DipN3 (Dip = 2,6-diisopropylphenyl) has been studied. The nature of the products depends on the substituents at the C5 ring, at the phosphorus and nitrogen atoms: A series of new P-amino-cyclopentadienylidene-phosphoranes 2-6 was synthesized by reactions of P1-P3 with 1-AdN3 (2-4) and DipN3 (5,6). In contrast, P-cyclopentadienyl-iminophosphoranes 1 and 7 were obtained as predominant tautomers by reaction of less CH-acidic P3 with less N-basic Me3SiN3 and DipN3. Both tautomers are protonated forms of ambident, potentially chelating constrained-geometry ligands. The molecular structures of three members of this "CpPN" ligand family, 3, 4 and 6, are characterized by X-ray crystallography.     

Azide addition to give a tetra-azazirconacycle complex

Addition of the dilithium salt, ortho-(Me3SiNLi)2C6H4, to ZrCl4 affords a base-free, D2d-symmetric complex Zr(IV)[ortho-(Me3SiN)2C6H4]2 (2), with rigorously planar ortho-phenylenediamine ligands. Lewis acidic 2 readily coordinates donor ligands such as NHEt2 to give the five-coordinate complex, Zr(IV)(NHEt2)[ortho-(Me3SiN)2C6H4]2 (3), which is also accessible by the reaction of Zr(NEt2)4 with 2 equiv of ortho-(Me3SiNH)2C6H4. Aryl azides react with 2 and 3 to give an unusual tetra-azametallacycle complex, 4, via 1,2-addition of a ligand N-Si bond to the organic azide. An X-ray crystal structure of 4 reveals a planar, five-membered metallacycle comprising the zirconium atom, one nitrogen atom of the ortho-(Me3SiN)2C6H4 ligand, and all three nitrogen atoms of the aryl azide.     

Label-free detection of C-reactive protein using reflectometric interference spectroscopy-based sensing system

Reflectometric interference spectroscopy (RIfS) is a label-free, time-resolved technique, and suitable for detecting antibody–antigen interaction. This work describes a continuous flow biosensor for C-reactive protein (CRP), involving an effective immobilization method of a monoclonal antibody against CRP (anti-CRP) to achieve highly sensitive RIfS-based detection of CRP. The silicon nitride-coated silicon chip (SiN chip) for the RIfS sensing was first treated with trimethylsilylchloride (TMS), followed by UV-light irradiation to in situ generation of homogeneous silanols on the surface. Following amination by 3-aminopropyltriethoxysilane, carboxymethyldextran (CMD) was grafted, and subsequently, protein A was immobilized to create the oriented anti-CRP surface. The immobilization process of protein A and anti-CRP was monitored with the RIfS system by consecutive injections of an amine coupling reagent, protein A and anti-CRP, respectively, to confirm the progress of each step in real time. The sensitivity was enhanced when all of the processes were adopted, suggesting that the oriented immobilization of anti-CRP via protein A that was coupled with the grafted CMD on the aminated surface of TMS-treated SiN chip. The feasibility of the present sensing system was demonstrated on the detection of CRP, where the silicon-based inexpensive chips and the simple optical setup were employed. It can be applied to other target molecules in various fields of life science as a substitute of surface plasmon resonance-based expensive sensors.