Andreev Tunneling Through a Ferromagnet/Quantum-Dot/Superconductor System

We study Andreev tunneling through a ferromagnet/quantum-dot (QD)/superconductor system. By usingnonequilibrum Green function method, the averaged occupation of electrons in QD and the Andreev tunneling currentare studied. Comparing to the norma-metal/quantum-dot/superconductor, the system shows significant changes: (i)The averaged occupations of spin-up and spin-down electrons are not equal. (ii) With the increase of the polarizationof ferromagnetic lead, the Andreev reflection current decreases. (iii) However, even the ferromagnetic lead reaches fullpolarization, the averaged occupation of spin-down electrons is not zero. The physics of these changes is discussed.     

Influence of intradot Coulomb correlations on the Andreev reflection in a ferromagnetic metal/quantum dot/superconductor hybrid junction

Spin-dependent tunneling through a quantum dot coupled to one ferromagnetic and onesuperconducting electrodes is studied in the Andreev reflection (AR) regime. Electricalconductance is calculated within the nonequilibrium Green function technique. Features ofthe AR current involved by the intradot Coulomb correlations (or the dot’s chargingenergy U) and in the presence of the Zeeman splitting of the dotdiscrete level are analyzed in both linear and nonlinear transport regimes. A newinterference effect due to AR is predicted to appear in the case of a weak on-dotrepulsion. Strong Coulomb correlations studied in nonequilibrium situation revealedsignificant modifications of the AR differential conductance occurring only in case ofspin-polarized transmission. Origin of a variety of the multipeak structure of theconductance for the system with the interacting quantum dot, as well as the conditions forthe perfect U-dependent AR transmission are also discussed.     

耦合Majorana束缚态T形双量子点中的Andreev反射

研究了连接在正常金属电极和超导电极之间的耦合Majorana束缚态(MBSs)T形双量子点结构中的Andreev反射.研究发现,对于T形双量子点结构,当入射能量等于边耦合量子点能级时Andreev反射电导出现Fano振荡,连接MBSs之后,零费米能附近出现一对新的Fano型振荡峰.如果忽略两个MBSs之间的相互作用,零费米能点的Andreev反射电导为定值1/2G_0(G_0=2e~2/h),不受量子点能级、双量子点之间耦合强度以及量子点与MBSs之间的耦合强度的影响.此外,在没有耦合MBSs的T形双量子点结构中,调节双量子点间的耦合强度可以使零费米能附近的Andreev反射电导出现由共振带向反共振带的转变,而耦合MBSs之后,又可以使反共振消失转而出现新的共振峰.     

Transport properties of quantum dots

Linear and nonlinear transport through a quantum dot that is weakly coupled to ideal quantum leads is investigated in the parameter regime where charging and geometrical quantization effects coexist. The exact eigenstates and spins of a finite number of correlated electrons confined within the dot are combined with a rate equation. The current is calculated in the regime of sequential tunneling. The analytic solution for an Anderson impurity is given. The phenomenological charging model is compared with the quantum mechanical model for interacting electrons. The current-voltage characteristics show Coulomb blockade. The excited states lead to additional fine-structure in the current voltage characteristics. Asymmetry in the coupling between the quantum dot and the leads causes asymmetry in the conductance peaks which is reversed with the bias voltage. The spin selection rules can cause a ‘spin blockade’ which decreases the current when certain excited states become involved in the transport. In two-dimensional dots, peaks in the linear conductance can be suppressed at low temperatures, when the total spins of the corresponding ground states differ by more than 1/2. In a magnetic field, an electron number parity effect due to the different spins of the many-electron ground states is predicted in addition to the vanishing of the spin blockade effect. All of the predicted features are consistent with recent experiments.     

Time-dependent transport through a quantum dot: influence of the Coulomb interaction on the quantum dot charge states

We consider the electron transport through one-level quantum dot, out of the Kondo regime, under the influence of the external microwave fields. The influence of the intra-dot Coulomb electron-electron interaction is studied using the equation of motion method for appropriate correlation functions. The formula for the current and the closed set of the integro-differential equations for the expectation values of the quantum dot charge states are given. The most characteristic feature of these time-averaged expectation values is an appearance of the additional structure (sidebands) on the curves of the derivatives of the expectation values with respect to the gate voltage. The sidebands structure formed on both sides of the ‘ionization’ and ‘affinity’ quantum dot levels are also found on the current and differential conductance curves.     

Dynamics of spins in a quantum dot in the presence of a stationary current

We investigate the dynamics of spins of a quantum dot coupled to two leads by considering the transport process of electrons in the Coulomb blockade regime. A magnetic field with a constant and an oscillating components perpendicular to each other is applied. With the nonequilibrium-Green-function technique, we calculate the stationary current and show that a spin satellite peak appears apart from the resonance peak. This satellite peak is the result of the spin flip inside the dot caused by the oscillating component of the field. It is shown that the heights of the two peaks are influenced mutually. The curve of the current versus the frequency of the oscillating field exhibits an asymmetric line shape.     

Dynamic localization of two electrons in AC-driven triple quantum dots and quantum dot shuttles

We analyze the dynamic localization of two interacting electrons induced by alternating current electric fields in triple quantum dots and triple quantum dot shuttles. The calculation of the long-time averaged occupation probability shows that both the intra-and inter-dot Coulomb interaction can increase the localization of electrons even when the AC field is not very large. The mechanical oscillation of the quantum dot shuttles may keep the localization of electrons at a high level within a range if its frequency is quite a bit smaller than the AC field. However, the localization may be depressed if the frequency of the mechanical oscillation is the integer times of the frequency of the AC field. We also derive the analytical condition of two-electron localization both for triple quantum dots and quantum dot shuttles within the Floquet formalism.     

Even-odd effect in Andreev transport through a carbon nanotube quantum dot

We have measured the current (I)-voltage (V) characteristics of a single-wall carbon nanotube quantum dot coupled to superconducting source and drain contacts in the intermediate coupling regime. Whereas the enhanced differential conductance dI/dV due to the Kondo resonance is observed in the normal state, this feature around zero-bias voltage is absent in the superconducting state. Nonetheless, a pronounced even-odd effect appears at finite bias in the dI/dV subgap structure caused by Andreev reflection. The first-order Andreev peak appearing around V=Delta/e is markedly enhanced in gate-voltage regions, in which the charge state of the quantum dot is odd. This enhancement is explained by a "hidden" Kondo resonance, pinned to one contact only. A comparison with a single-impurity Anderson model, which is solved numerically in a slave-boson mean-field approach, yields good agreement with the experiment.     

Pure spin-current diode based on interacting quantum dot tunneling junction

A magnetic field-controlled spin-current diode is theoretically proposed, which consists of a junction with an interacting quantum dot sandwiched between a pair of nonmagnetic electrodes. By applying a spin bias V_S across the junction, a pure spin current can be obtained in a certain gate voltage regime,regardless of whether the Coulomb repulsion energy exists. More interestingly, if we applied an external magnetic field on the quantum dot, we observed a clear asymmetry in the spectrum of spin current I_S as a function of spin bias, while the charge current always decays to zero in the Coulomb blockade regime. Such asymmetry in the current profile suggests a spin diode-like behavior with respect to the spin bias, while the net charge through the device is almost zero. Different from the traditional charge current diode, this design can change the polarity direction and rectifying ability by adjusting the external magnetic field, which is very convenient. This device scheme can be compatible with current technologies and has potential applications in spintronics or quantum processing.     

Modelling inter-dot Coulomb interaction effects in field effect transistors with an embedded quantum dot layer

By a computer simulation we study the real space and energy distributions of 0D electrons bound in a planar array of quantum dots, including both intra-dot charging and inter-dot Coulomb interaction effects, size fluctuations, as well as the screening by a parallel gas of 2D electrons.It is demonstrated that the mutual Coulomb shifts between different dots cause pronounced many-body correlation effects and in-plane potential fluctuations, which can be significant for experiments such as capacitance and tunneling spectroscopy. In addition we investigate the influence of charged dot scattering on the mobility of a conducting channel parallel to the dot layer.     

Spin-dependent Andreev reflection in a three-terminal Aharonov-Bohm interferometer with coherent indirect coupling

Within the framework of non-equilibrium Green’s functions, we investigate the spin-dependent Andreev reflection (AR) in a three-terminal Aharonov-Bohm interferometer with double quantum dot, taking account of the coherent indirect coupling via the superconducting reservoir. It is found that the time-reversal symmetry is broken by the crossed Andreev reflection (CAR) process, and moreover that the spin-value effect of the linear conductance, the spin-polarised AR current, and a pure spin current can be generated by means of the normal AR and the CAR. Expressions for the AR conductances (the transport coefficients) governing the AR properties of this system are derived analytically. The effect of the coherent indirect coupling on the conductance, the Andreev reflected tunneling magnetoresistance (ARTMR), and the spin-related current in the presence of the AR are amply analyzed. Our results indicate that the optimal properties of this system can be realised by tuning the external parameters.     

Andreev reflection current through a molecule quantum dot in the presence of the electron-phonon interaction and the spin-flip scattering

With the aid of the nonequilibrium Green's function and the Lang-Firsov canonical transformation, we investigate the joint effects of a phononic environment and the spin-flip scattering on the Andreev reflection (AR) in a ferromagnet/single-molecular quantum dot/superconductor (FM/MQD/SC) system. In the presence of the strong electron-phonon interaction (EPI), it is found that the EPI strongly suppresses the AR current (called the Franck-Condon blockade). When the coherent spin-flip (similar to a transverse magnetic field) is taken into account within the MQD, the AR current is significantly enhanced, furthermore, the spin-polarized AR current or even the pure spin-polarized AR current can be generated. By tuning the system parameters, the amplitude and direction of the AR current can be changed, this provides an efficient mechanism for controlling the AR process.     

Nonlocal Andreev reflection in a three-terminal Aharonov-Bohm interferometer

We theoretically report a nonlocal Andreev reflection in an Aharonov-Bohm interferometer, which is a three-terminal normal metal/superconductor (NS) mesoscopic hybrid system. It is found that this nonlocal Andreev reflection is sensitive to the systematic parameters, such as the bias voltages, the quantum dot levels, and the external magnetic flux. If we set the chemical potential of one normal metal lead equal to zero, the electronic current in the lead results from two competing processes: the quasiparticle transmission and nonlocal Andreev reflection. The appearance of zero electronic current signals unambiguously the existence of this nonlocal Andreev reflection.     

Transmission of electron through an Aharonov－Bohm interferometer with a quantum dot in Coulomb blockade regime

We calculate conductance of an Aharonov－Bohm (AB) interferometer for which a single-level quantum dot in the Coulomb blockade regime is embedded in one of its arms. Using the Schr?dinger equations and taking into account the Coulomb interaction on the dot, we calculate conductance G as a function of flux φ threaded through the ring and as a function of gate voltage V applied to the dot. It is found that the AB oscillations of G(φ) depend on the particle occupation on the dot, controlled by V. If the system is closed, there is no loss of particles, G(φ) is periodic and G(φ)=G(-φ), satisfying the Onsager relation. In this case G(φ) can reach its maximum value, 2e^2/h, at the resonance. When the system is open, one has G(φ)≠G(-φ), G(φ) yields a phase shift which depends on the loss rate of electrons in this open system.     

Spin-Polarized Electron Tunneling TD:\pdf\.PDFhrough a Quantum Dot

Nonequilibrium Green's function is uscd to study spin-polarized electron tunneling through a quantum dot connected to two ferromagnetic electrodes with different orientations via two insulating barriers (FM/I/QD/I/FA.f). Intra-level Coulomb interaction in the dot is considered. General formula of tunneling current which can be used for arbitrary angle between the two electrodes' magnetizations is derived for both the weak and strong intra-dot interactions.We find that the transport current can be divided into two parts: the current with the spin-flip and the current without the spin-flip, which critically depend on the linewidth function near the Fermi level of the ferromagnetic electrodes. If a magnetic field is applied in the quantum dot, different behaviors will be found for weak and strong interactions.     

Nonlocal Andreev reflection with Rashba spin-orbital interaction in a triple-quantum-dot ring

We theoretically studied the nonlocal Andreev reflection with Rashba spin-orbital interaction in a triple-quantumdot(QD) ring,which is introduced as Rashba spin-orbital interaction to act locally on one component quantum dot.It is found that the electronic current and spin current are sensitive to the systematic parameters.The interdot spin-flip term does not play a leading role in causing electronic and spin currents.Otherwise the spin precessing term leads to shift of the peaks of the the spin-up and spin-down electronic currents in different directions and results in the spin current.Moreover,the spin-orbital interaction suppresses the nonlocal Andreev reflection,so we cannot obtain the pure spin current.     

Andreev-Fano Effect in a Hybrid Normal-Metal/Superconductor Interferometer

We report on a new type of Fano effect, named as Andreev-Fano effect, in a hybrid normal-metal/superconductor (N/S) interferometer embedded with a quantum dot. Compared with the conventional Fano effect, Andreev-Fano effect has some new features related to the characteristics of Andreev reflection. In the linear response regime, the line shape is the square of the conventional Fano shape, while in the nonlinear transport, a sharp resonant structure is superposed on an expanded interference pattern, which is qualitatively different from the conventional Fano effect. The phase dependence of the hybrid N/S interferometer is also distinguished from those of all-N or all-S interferometers.     

Spacing and width of Coulomb blockade peaks in a silicon quantum dot

We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. The ratio of charging energy to single-particle energy is considerably larger than in comparable GaAs/AlGaAs quantum dots. The statistical distribution of the conductance peak spacings in the Coulomb blockade regime was found to be unimodal and does not follow the Wigner surmise. The fluctuations of the spacings are much larger than the typical single-particle level spacing and thus clearly contradict the expectation of random matrix theory. Measurements of the natural line width of a set of several adjacent conductance peaks suggest that all of the peaks in the set are dominated by electrons being transported through a single-broad energy level.     

Andreev-Fano Effect in a Hybrid Normal-Metal/Superconductor Interferometer

We report on a new type of Fano effect, named as Andreev-Fano effect, in a hybrid normal-metal/supeeconductor (N/S) interferometer embedded with a quantum dot. Compared with the conventional Fano effect, AndreevFano effect has some new features related to the characteristics of Andreev reflection. In the Iinear response regime, the line shape is the square of the conventional Fano shape, while in the nonlinear transport, a sharp resonant structure is superposed on an expanded interference pattern, which is qualitatively different from the conventional Fano effect. The phase dependence of the hybrid N/S interferometer is also distinguished from those of all-N or all-S interferometers.     

Generation and manipulation of spin current via a hybrid four-terminal single-molecule junction

We present a new device which consists of a molecular quantum dot (MQD) attached to a normal-metal, two ferromagnetic (FM), and a superconducting leads. The spin-related Andreev reflection (AR) current and the spin-dependent single-particle tunneling current through the normal-metal terminal are obtained, and it is found that the spin current exhibits the transistor-like behavior. The joint effects of the coherent spin flip and the angle between magnetic moments of the two FM leads on the spin current are also studied, these results provide the possibility to manipulate the spin current with the system parameters.