Low-temperature thermal properties of Pb2P2Se6 and Pb1.424Sn0.576P2Se6

The heat capacities of Pb₂P₂Se₆ and Pb_1.424Sn_0.576P₂Se₆ were measured at temperatures between 10 and 320 K for the former and between 10 and 330 K for the latter. The heat capacities values were analyzed by harmonic approximation using the Debye and Einstein functions. They were calculated using 3 Debye and 7, 7, 7, 6 Einstein sets. The calculated heat capacities were in good agreement with the observed ones.     

Synthesis and characterization of quaternary selenides Sn2Pb5Bi4Se13 and Sn8.65Pb0.35Bi4Se15

Quaternary selenides Sn₂Pb₅Bi₄Se₁₃ and Sn_8.65Pb_0.35Bi₄Se₁₅ were synthesized from the elements in sealed silica tubes; their crystal structures were determined by single-crystal and powder X-ray diffraction. Both compounds crystallize in monoclinic space group C2/m (No.12), with lattice parameters of Sn₂Pb₅Bi₄Se₁₃: a = 14.001(6) Å, b = 4.234(2) Å, c = 23.471(8) Å, V = 1376.2(1) Å³, R₁/wR₂ = 0.0584/0.1477, and GOF = 1.023; Sn_8.65Pb_0.35Bi₄Se₁₅: a = 13.872(3) Å, b = 4.2021(8) (4) Å, c = 26.855(5) Å, V = 1557.1(5) Å³, R₁/wR₂ = 0.0506/0.1227, and GOF = 1.425. These compounds exhibit tropochemical cell-twinning of NaCl-type structures with lillianite homologous series L(4, 5) and L(4, 7) for Sn₂Pb₅Bi₄Se₁₃ and Sn_8.65Pb_0.35Bi₄Se₁₅, respectively. Measurements of electrical conductivity indicate that these materials are semiconductors with narrow band gaps; Sn₂Pb₅Bi₄Se₁₃ is n-type, whereas Sn_8.65Pb_0.35Bi₄Se₁₅ is a p-type semiconductor with Seebeck coefficients −80(5) and 178(7) μV/K at 300 K, respectively.     

Synthesis and phase width of new quaternary selenides PbxSn6−xBi2Se9 (x=0-4.36)

Quaternary chalcogenides Pb_xSn_6−xBi₂Se₉ (x=0-4.36) were synthesized with solid-state methods; their structures were determined from the X-ray diffraction of single crystals. Pb_xSn_6−xBi₂Se₉ crystallizes in an orthorhombic space group Cmcm (No. 63); the structure features a three-dimensional framework containing slabs of NaCl-(3 1 1) type that exhibits identical layers containing seven octahedra units, which expand along the direction [0 1 0]. Each slab contains fused rectangular units that are connected to each other with M-Se contacts in a distorted octahedral environment. Calculations of the band structure, measurements of Seebeck coefficient and electrical conductivity confirm that these compounds are n-type semiconductors with small band gaps and large electrical conductivities.     

Quaternary selenostannates Na2−xGa2−xSn1+xSe6 and AGaSnSe4 (A=K, Rb, and Cs) through rapid cooling of melts. Kinetics versus thermodynamics in the polymorphism of AGaSnSe4

The quaternary alkali-metal gallium selenostannates, Na_2−xGa_2−xSn_1+xSe₆ and AGaSnSe₄ (A=K, Rb, and Cs), were synthesized by reacting alkali-metal selenide, Ga, Sn, and Se with a flame melting-rapid cooling method. Na_2−xGa_2−xSn_1+xSe₆ crystallizes in the non-centrosymmetric space group C2 with cell constants a=13.308(3) Å, b=7.594(2) Å, c=13.842(3) Å, β=118.730(4)°, V=1226.7(5) Å³. α-KGaSnSe₄ crystallizes in the tetragonal space group I4/mcm with a=8.186(5) Å and c=6.403(5) Å, V=429.1(5) Å³. β-KGaSnSe₄ crystallizes in the space group P2₁/c with cell constants a=7.490(2) Å, b=12.578(3) Å, c=18.306(5) Å, β=98.653(5)°, V=1705.0(8) Å³. The unit cell of isostructural RbGaSnSe₄ is a=7.567(2) Å, b=12.656(3) Å, c=18.277(4) Å, β=95.924(4)°, V=1741.1(7) Å³. CsGaSnSe₄ crystallizes in the orthorhombic space group Pmcn with a=7.679(2) Å, b=12.655(3) Å, c=18.278(5) Å, V=1776.1(8) Å³. The structure of Na_2−xGa_2−xSn_1+xSe₆ consists of a polar three-dimensional network of trimeric (Sn,Ga)₃Se₉ units with Na atoms located in tunnels. The AGaSnSe₄ possess layered structures. The compounds show nearly the same Raman spectral features, except for Na_2−xGa_2−xSn_1+xSe₆. Optical band gaps, determined from UV-Vis spectroscopy, range from 1.50 eV in Na_2−xGa_2−xSn_1+xSe₆ to 1.97 eV in CsGaSnSe₄. Cooling of the melts of KGaSnSe₄ and RbGaSnSe₄ produces only kinetically stable products. The thermodynamically stable product is accessible under extended annealing, which leads to the so-called γ-form (BaGa₂S₄-type) of these compounds.     

Specific heat on Sr<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>7</Subscript> and Sr<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>7</Subscript>

Summary Specific heats on the single crystals of Sr₂Nb₂O₇, Sr₂Ta₂O₇ and (Sr_1-xBa_x)₂Nb₂O₇ were measured in a wide temperature range of 2-600 K. Heat anomalies of a λ-type were observed at the incommensurate phase transition of T_INC (=495 K) on Sr₂Nb₂O₇ and at the super-lattice phase transition of T_SL (=443 K) on Sr₂Ta₂O₇; the transition enthalpies and the transition entropies were estimated. Furthermore, a small heat anomaly was observed at the low temperature ferroelectric phase transition of T_LOW (=95 K) on Sr₂Nb₂O₇. The transition temperature T_LOW decreases with increasing Ba content x and it vanishes for samples of x>2%.     

Crystallization Kinetics of Pb20Ge17Se63 and Pb20Ge22Se58 Chalcogenide Glasses

Two glasses of the chalcogenide system Pb₂₀Ge_xSe_80-x, with x =17 and 22 at.%, were prepared by the melt quench technique. Differential scanning calorimetry emphasized that the investigated Pb₂₀Ge₁₇Se₆₃ and Pb₂₀Ge₂₂Se₅₈ glasses are crystallized to GeSe₂ and PbSe₂ as well as GeSe₂ and PbSe, respectively as revealed by X-ray diffraction analysis. It was found that the glass transition temperatures of the Pb₂₀Ge₂₂Se₅₈ glass are higher than those of Pb₂₀Ge₁₇Se₆₃ ones. The respective values for the activation energy of glass transition (E _t ) for Pb₂₀Ge₁₇Se₆₃ and Pb₂₀Ge₂₂Se₅₈ are found to be 434±20 and 761±77 kJ mol^-1, while those for the annealed samples are 928±85 and 508±23 kJ mol^-1, respectively. The activation energies of crystallization (E _c) before and after annealing were determined using different methods. Applying the modified Johnson-Mehl-Avrami (JMA) equation, it could be found that GeSe₂ is crystallized by surface crystallization, while both PbSe₂ and PbSe are crystallized by bulk crystallization in three dimensions . This revised version was published online in August 2006 with corrections to the Cover Date.     

SIMS accurate determination of matrix composition of topological crystalline insulator material Pb1 − xSnxSe

Substitutional alloy Pb_1 − xSn_xSe is a new class of electronic materials called topological crystalline insulators, which at the temperature range from 0 K to 300 K exhibit topological state at compositions in the range 0.18 < x < 0.40 (in the rock-salt structure). In this report, we present a secondary ion mass spectrometry (SIMS) analysis technique to provide accurate Pb and Sn composition based on the measurement of PbCs⁺ and SnCs⁺ cluster ions intensities. Studies of Pb_1 − xSn_xSe bulk samples with various values of x show that x/(1 − x) is linear in relation to the intensity ratio of PbCs⁺/SnCs⁺ over the range from x = 0.15 to x = 0.41. This technique allows us to obtain an accurate Sn content for multilayered heterostructures, quantum wells containing Pb_1 − xSn_xSe with different x values for each layer.     

Effect of antimony on glass transition and thermal stability of Se<Subscript>78−x</Subscript>Te<Subscript>18</Subscript>Sn<Subscript>2</Subscript>Sb<Subscript>x</Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0, 2, 4 and 6 at.%) multicomponent glassy alloys

Multicomponent glassy alloys Se_78?xTe₁₈Sn₂Sb_x (x?=?0, 2, 4 and 6) have been synthesized using melt quench technique. The prepared samples have been characterized by X-ray diffraction technique and differential scanning calorimetry (DSC). Glass transition kinetics of Se_78?xTe₁₈Sn₂Sb_x (x?=?0, 2, 4 and 6 at.%) glassy alloys has been examined using DSC. DSC runs have been recorded at different heating rates (5, 10, 15 and 20 K min^?1) for each sample under investigation. Heating rate dependence of glass transition temperature (T_g) has been studied using Lasocka empirical relation. The activation energy of glass transition has been evaluated using Kissinger and Moynihan’s relation. The effect of antimony concentration on glass transition temperature and activation energy has been investigated in the prepared samples. Glass-forming ability and thermal stability of Se_78?xTe₁₈Sn₂Sb_x (x?=?0, 2, 4 and 6) glassy alloys have been monitored through the evaluation of thermal stability using Dietzal relation, Hurby parameter, and Saad and Poulin parameter. The above-mentioned parameters are found to be compositionally dependent, which indicates that among the studied glass samples the stability is maximum for Sb at 2% content.     

Evaluation of specific heat and related thermodynamic properties of Ge1?xSnxSe2.5 (0?≤?x?≤?0.5) glasses

This paper presents the result of thermodynamic studies on Ge_1−x Sn _x Se_2.5 (0 ≤ x ≤ 0.5) glasses using differential scanning calorimetry. The obtained experimental results on phase transformations have been employed to obtain thermodynamic parameters like entropy difference between metastable states in the glassy region, difference of Gibbs free energy, specific heat, entropy between the glassy and the crystalline phase and the enthalpy released during phase transformation (glassy to crystalline). The results yield that, Ge_0.7Sn_0.3Se_2.5 sample is least stable among all the samples. The stability increases on addition of Sn beyond 0.3 at. mass% upto 0.5 at. mass%.     

Crystallization study of Sn additive Se–Te chalcogenide alloys

Calorimetric study of Se_85−x Te₁₅Sn _x (x = 0, 2, 4 and 6) glassy alloys have been performed using Differential Scanning Calorimetry (DSC) under non-isothermal conditions at four different heating rates (5, 10, 15 and 20 °C/min). The glass transition temperature and peak crystallization temperature are found to increase with increasing heating rate. It is remarkable to note that a second glass transition region is associated with second crystallization peak for Sn additive Se–Te investigated samples. Three approaches have been employed to study the glass transition region. The kinetic analysis for the first crystallization peak has been taken by three different methods. The glass transition activation energy, the activation energy of crystallization, and Avrami exponent (n) are found to be composition dependent. The crystallization ability is found to increase with increasing Sn content. From the experimental data, the temperature difference (T _p − T _g) is found to be maximum for Se₈₃Te₁₅Sn₂ alloy, which indicates that this alloy is thermally more stable in the composition range under investigation.     

Synthesis and characterization of quaternary chalcogenides InSn2Bi3Se8 and In0.2Sn6Bi1.8Se9

Quaternary chalcogenides InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ were synthesized on direct combination of their elements in stoichiometric ratios at T>800 °C under vacuum. Their structures were determined with X-ray diffraction of single crystals. InSn₂Bi₃Se₈ crystallizes in monoclinic space group C2/m (No. 12) with a=13.557(3) Å, b=4.1299(8) Å, c=15.252(3) Å, β=115.73(3)°, V=769.3(3) Å³, Z=2, and R₁/wR₂/GOF=0.0206/0.0497/1.092; In_0.2Sn₆Bi_1.8Se₉ crystallizes in orthorhombic space group Cmc2₁ (No. 36) with a=4.1810(8) Å, b=13.799(3) Å, c=31.953(6) Å, V=1843.4(6) Å³, Z=4, and R₁/wR₂/GOF=0.0966/0.2327/1.12. InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ are isostructural with CuBi₅S₈ and Bi₂Pb₆S₉ phases, respectively. The structures of InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ feature a three-dimensional framework containing slabs of NaCl-(311) type with varied thicknesses. Calculations of the electronic structure and measurements of electrical conductivity indicate that these materials are semiconductors with narrow band gaps. Both compounds show n-type semiconducting properties with Seebeck coefficients −270 and −230 μV/K at 300 K for InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉, respectively.     

Differential scanning calorimetry study of Ge1−xSnxSe2.5 glasses

The glass-forming tendency and specific heat in ice cold water-quenched Ge_1?xSn_xSe_2.5 glassy alloys with 0H _f, the heat ΔH _c associated with the crystallization of an amorphous phase and the glass transition temperatureT _g were deduced from the DSC curves. The composition dependence of glass forming ability,T _g and crystallization behavior has been discussed.     

Thermodynamic investigation of the systems <Emphasis Type="Italic">Ln</Emphasis>Se<Subscript>2</Subscript>–<Emphasis Type="Italic">Ln</Emphasis>Se<Subscript>1.5</Subscript> (<Emphasis Type="Italic">Ln</Emphasis> = La,Nd)

A detailed thermodynamic study of the systems LnSe₂–LnSe_1.5 (Ln = La, Nd) was performed by static method of vapour pressure measurement using quartz membrane-gauge manometers within the temperature range 713–1,395 K. The p _Se–T–x dependences obtained in this study have shown that the phase regions in composition intervals studied consist of discrete phases: LnSe_1.95 LnSe_1.90, LnSe_1.85, LnSe_1.80 (Ln = La, Nd). The enthalpies and the entropies for the stepwise dissociation process were calculated from the experimental data. The standard enthalpies of formation and the absolute entropies were estimated for the compounds investigated using literature data.     

Preparation and magnetic properties of Fe-Nb co-doped SnO2

Fe³⁺-Nb⁵⁺ co-doped SnO₂ was prepared at 1200 °C by a simple chemical co-precipitation method. The Sn_1−2xFe_xNb_xO₂ solid solutions kept cassiterite structure in the range of 0<x?0.33, and their cell parameters decrease with increasing x. While x=0.40, a second phase with orthorhombic FeNbO₄ structure co-exists with the cassiterite phase, and the second phase becomes dominant while x?0.45. The magnetic measurements indicated that low doping ratio sample (x=0.03) exhibits paramagnetic behavior. A paramagnetic-to-antiferromagnetic phase transition was observed for the samples with higher doping ratio (x?0.15).     

Dimensional Reduction of a Selenido Stannate Salt in Ionic Liquids to form 2D-K2Sn2Se5, a Direct Heavy Analogue of an Oxo Silicate

The structural motifs of SiO₂ or silicates, on one hand, and their heavier homologues of group 14 (T) and group 16 (E) elements, on the other hand, commonly differ, as the strict adherence to corner-sharing is not necessary in the latter owing to larger interatomic distances. On the contrary: larger coordination numbers as well as edge-sharing of the coordination polyhedra are preferred in [T_xE_y] subunits with T = Si, Ge, Sn and E = S, Se, Te. Hence, we were surprised to find a new modification of the selenido stannate K₂Sn₂Se₅, which is comprised of exclusively corner-sharing [SnSe₄] tetrahedra in a layer-type anionic substructure 2D-{[Sn₂Se₅]^2–}. While the structure of the title compound 2D-K₂Sn₂Se₅ ( 1 ) differs significantly from the known parent compound, 3D-K₂Se₂Se₅, it shows similarities with layered silicates of the apophyllite family. To the best of our knowledge, 1 represents the first known selenido stannate with an oxo silicate-like 2D structure. It formed besides known selenido stannes upon heating 3D-K₂Sn₂Se₅ in in imidazolium-based ionic liquids (C₂C₂Im)[BF₄] or (C₂C₂Im)[BF₄] in the presence of DMMP and Cd²⁺ or Zn²⁺.     

Phase equilibria in the PbSe-Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript>-Se system and thermodynamic properties of intermediate phases

The Pb-Bi-Se system in the PbSe-Bi₂Se₃-Se-Se composition region was studied by measurement of concentration circuits of the type (−) PbSe(solid) liquid electrolyte, Pb²⁺(Pb-Bi-Se)(solid) (+) in the temperature range 300–430 K and by X-ray powder diffraction. A solid-phase equilibrium diagram was constructed, and the formation was confirmed for the ternary compounds Pb₅Bi₆Se₁₄, Pb₅Bi₁₂Se₂₃, and Pb₅Bi₁₈Se₃₂, which belong to the homologous series [(PbSe)₅] _m · [(Bi₂Se₃)₃] _n . From the emf versus temperature equations, the partial thermodynamic functions [`(DG)]\overline {\Delta G}, [`(DH)]\overline {\Delta H}, [`(DS)]\overline {\Delta S} of PbSe in alloys were calculated. Based on the solid-phase equilibrium diagram from these partial molar quantities using the corresponding data for PbSe and Bi₂Se₃, the standard thermodynamic functions of formation and standard entropies of the above ternary compounds were calculated.     

Lattice temperature and hyperfine interactions of Pb1−xSnxTe (0.21 ≤ x ≤ 0.75)

Thin (<15 μm) samples of lead tin telluride, Pb_1?xSn_xTe (x = 0.21, 0.25, 0.55, and 0.75) have been studied by temperature dependent Mössbauer spectroscopy using the 23.8 keV gamma radiation of ^119mSn. The tin atom occupies a lattice site having cubic symmetry (QS = 0 ± 0.020 mm sec^?1) over the temperature range 78 ≤ T ≤ 240 K, and there is no evidence for a rhombic (low temperature) to cubic (high temperature) phase transition such as that reported for SnTe in this temperature interval. The lattice temperature as probed by the Sn atom is independent of the compositional parameter x and is similar to that reported for SnTe from Mössbauer studies and for Pb_0.63Sn_0.37Te from X-ray powder diffraction data. Radiation damage produced by 2-MeV proton irradiation to a total fluence of ～10¹⁷ cm^?2 at liquid nitrogen temperature does not have any effect on the Mössbauer parameters, possibly because the major damage is annealed at temperatures below 150 K.     

Crystal Structure, Phase Transition, and Thermodynamic Properties of Bis-dodecylammonium Tetrachlorozincate (C12H25NH3)2ZnCl4(s)

The crystal structure and composition of (C₁₂H₂₅NH₃)₂ZnCl₄(s) were characterized by chemical and elemental analysis, X‐ray powder diffraction technique and X‐ray crystallography. The lattice energy of the title compound was calculated to be U_POT=888.82 kJ·mol^?1. Low temperature heat capacities of the title compound have been measured by a precision automated adiabatic calorimeter over the temperature range from 80 to 403 K. An obvious solid to solid phase transition occurred in the heat capacity curve, and the peak temperature, molar enthalpy and molar entropy of the phase transition of the compound were determined to be T_trs= (364.02±0.03) K, (_trsH_m= (77.567±0.341) kJ·mol^?1, and (_trsS_m= (213.77±1.17) J·K^?1·mol^?1, respectively. Experimental molar heat capacities before and after the phase transition were respectively fitted to two polynomial equations. The smoothed molar heat capacities and fundamental thermodynamic functions of the sample relative to the standard reference temperature 298.15 K were calculated and tabulated at an interval of 5 K.     

Synthesis and Structure of [Sn4Se11]6–, [Sn2Se52–], and [Sn3Se72–] – Model Anions for the Solventothermal Reaction Pathway to Lamellar Selenidostannates(IV)

Reaction of A₂CO₃ (A = K, Rb) with Sn and Se in an H₂O/CH₃OH mixture at 115–130°C affords the isotypic selenidostannates(IV) A₆Sn₄Se₁₁ _. xH₂O (A = K, x = 8) 1 and 2 whose discrete [Sn₄Se₁₁]^6– anions each contain two corner‐bridged ditetrahedral [Sn₂Se₆]^4– species. Similar reaction conditions with A = Cs afford Cs₂Sn₂Se₅ _. H₂O ( 3a ) and Cs₂Sn₂Se₅ ( 3b ) in which such [Sn₂Se₆]^4– building blocks are connected through common Se atoms into infinite [Sn₂Se₅^2–] chains. The [Sn₃Se₇^2–] ribbons of (Et₄N)₂Sn₃Se₇ ( 4 ), formed by treating (Et₄N)I with Sn and Se in methanol at 130°C, can be regarded as resulting from the condensation of [Sn₂Se₅^2–] chains with molecular [SnSe₄]^4– anions. The anions [Sn₄Se₁₁]^6–, [Sn₂Se₅^2–], and [Sn₃Se₇^2–] represent the products of individual reaction steps on the potential condensation pathway of [Sn₂Se₆]^4– to the lamellar selenidostannates(IV) [Sn₄Se₉^2–] or [Sn₃Se₇^2–].     

Low temperature heat capacities of mechanically alloyed La-doped PbWO4 system

Heat capacity measurements were carried out on Pb_1-xLa_xWO_4+x/2 (x=0.2) and Pb_1-xLa_2x/3WO₄ (x=0.2, 0.5) solid solutions prepared by sintering and mechanical alloying (MA) methods. For all the solid solutions, sintered samples showed slightly larger heat capacity around 100 K in comparison with MA samples, which was presumably caused by the excitation of mobile oxide ion motion. For sintered scheelite-type structured PbWO₄s, high-temperature synthesis introduced oxide ion interstitials even for the Pb_1-xLa_2x/3WO₄ system, which resulted in the excess heat capacity at low temperature for excitation. On the other hand, for the samples prepared by room-temperature MA technique, oxide ion seemed to occupy the regular sites rather than interstitial ones and excess heat capacities were not observed. This revised version was published online in August 2006 with corrections to the Cover Date.