Fabrication and growth rate estimation of PrBa2Cu3O7−δ single crystal by the modified top seeded crystal pulling method

Recently, we succeeded in fabricating single crystals of PrBa₂Cu₃O_7−δ by a modified top seeded crystal pulling method called the SRL-CP (Solute Rich Liquid-Crystal Pulling) method. Y₂O₃ and MgO polycrystalline crucibles and a MgO single crystal crucible were used to grow the single crystals. The crystal growth temperature was set in the range of 968°C to 972°C. The grown crystals were identified as PrBa₂Cu₃O_7−δ by X-ray diffraction. In the case of using Y₂O₃ crucibles the composition of the grown crystals was Y_xPr_1−xBa₂Cu₃O_7−δ (0.48 < x < 0.57) and in the case of using MgO crucibles a relatively small amount of Mg contamination to the grown crystals occurred at a typical concentration of approximately 1 at.% of the sum of cations. According to the crystal growth model of the SRL-CP method [1–5], a maximum growth rate of 1.7 × 10⁻⁵ cm/s was calculated with the aid of the phase diagram studies we reported earlier [6]. This value is reasonably in agreement with the experimental results.     

Determination of different oxygen transport mechanisms and measurement of the oxygen ion conductivity of Y1Ba2Cu3O7−x

By undertaking AC electrochemical impedance experiments on yttria stabilised zirconia electrolytes with polished Y₁Ba₂Cu₃O_7−x electrodes, the activation energy for oxygen ion transport within the bulk of Y₁Ba₂Cu₃O_7−x, in air, over the temperature range 823 K–1043 K, was determined to be 1.50 ± 0.05 eV. At 1000 K the oxygen ionic conductivity was calculated to be around one order of magnitude lower than that in yttria stabilised zirconia. Typical calculated values were σ=5×10⁻⁵ (ω cm)⁻¹ and 6×10⁻³ (ω cm)⁻¹ at the respective temperatures 823 K and 1043 K. By employing a similar cell but with Y₁Ba₂Cu₃O_7−x paste electrodes, oxygen transfer between the Y₁Ba₂Cu₃O_7−x and the electrolyte was found to occur via a surface diffusional processes. Over the temperature range 873 K–1098 K, in air, the activation energy for in-diffusion at the surface was found to be 1.4±0.1 eV and that for out-diffusion at the surface to be 1.76±0.05 eV.     

The effects of substrate temperature on the superconducting properties of Tl2Ca2Ba2Cu3O10 films sputter-deposited from stoichiometric oxide targets

The annealing characteristics and the superconducting properties of Tl₂Ca₂Ba₂Cu₃O₁₀ thin films sputter-deposited onto yttrium- stabilized ZrO₂ substrate at up to 500°C from two stoichiometric oxide targets are reported. The films deposited at 400–500°C were found to require a lower post-annealing temperature than the films deposited at lower temperatures to attain the highest T_c superconducting state, due to a more pronounced Ba diffusion toward the substrate as indicated by their secondary ion mass spectrometry depth profiles. The highest T_c achieved tends to degrade with increasing substrate temperatures, a zero resistance T_c of 121 and ≈90 K, respectively, being observed for the films deposited at -ambient temperature and at 500°C. The formation of the highest T_c phase (Tl₂Ca₂Ba₂Cu₃O₁₀) generally is associated with a sheet type of crystal growth morphology with smooth and aligned surfaces which can be obtained only from the films capable of sustaining prolonged annealing at 900°C. Annealing at lower temperatures (≈860°C) results in the formation of rod or sphere type of morphologies with rough and randomly oriented crystals and the lower T_c phases such as Tl₂Ca₁Ba₂Cu₂O₈.     

Superconducting oxide formation in the Yb---Ba---Cu---O system

Conditions for forming YbBa₂Cu₄O₈, Yb₂Ba₂Cu₃O_7−δ and YbBa₂Cu₃O_7−δ were determined in oxygen at 1.0 atm pressure by experiments with oxidized Yb---Ba---Cu---Ag alloys. YbBa₂Cu₃O_7−δ formed in less than 10 s when oxidized alloy ribbons were baked in the 805°C–890°C range. Large amounts of Ba₂Cu₃O₅ formed below 870°C. Yb₂Ba₄Cu₇O_15−δ and YbBa₂Cu₄O ₈ then formed in the 10²s–10³s range at temperatures in the 840°C–870°C and <840°C ranges, respectively. Ba₂Cu₃O₅ decomposition supplied Cu²⁺ and O²⁻ for the rapid transformation of YbBa₂Cu₃O_7−δ grains into Yb₂Ba₄Cu₇O_15−δ grains by intercalation. Intercalation was much slower in the absence of Ba₂Cu₃O₅. All of these transformation products underwent coarsening with increasing bake time. Rapid YbBa₂Cu₄O₈ and Yb₂Ba₄Cu₇O_15−δ formation, compared to the slow formation of these phase types when Yb was substituted by Y, Is due to the differing effects of Y and Yb on formation kinetics. Superconducting oxide-silver composite ribbons containing mainly YbBa₂Cu₃O_7−δ, Yb₂Ba₄Cu₇O_15−δ or YbBa₂Cu₄O₈ can be prepared from Yb---Ba ---Ba---Cu---Ag alloys.     

Electrical and structural properties of epitaxially grown Y1Ba2Cu3O7 − x and Y2Ba4Cu8O16 − x thin films using the BaF2 method

Thin films of Cu, Y and BaF₂ are co-condensed in ultrahigh vacuum onto SrTiO₃ (1 0 0)-substrates at room temperature without any additional oxygen supply. It is found that the temperature of the ex situ fluorine-oxygen exchange reaction in flowing wet oxygen essentially determines whether the Y₁Ba₂Cu₃O_{7 − x}-phase (T_ex = 850°C) or the Y₂Ba₄Cu₈O_{16 − x}-phase (T_ex = 800°C) forms or any mixture of both phases in between. Small-angle X-ray diffraction verifies the strictly epitaxial growth of the superconducting phases. The variation of the composition around the ideal 1,2,3-stoichiometry affects only the superconducting and normal conducting properties which are measured using the four-probe Montgomery method. The values of the normal state resistivity and its temperature dependence are discussed in combination with a reduced cross section of the conduction paths in the films.     

Surface atomic imaging of La2CuO4 and superconducting Tl2Ba2Ca2Cu3O10

Surface structures of the high T_c oxide superconductors Tl₂Ba₂Ca₂Cu₃O₁₀ and La₂CuO₄ have been studied by high resolution electron microscopy. In addition to the single atomic layer of La on the (113) surface observed previously, several atomic layers of the C-form of La₂O₃ were found to coat the (001) surfaces of La₂CuO₄. Surface reconstruction with the incorporation of excess Ba on the (110) surface of Tl₂Ba₂Ca₂Cu₃O₁₀ has been observed together with a stepped (11l) surface produced by a combination of the (110) and (001) planes. The (001) surface of Tl₂Ba₂Ca₂Cu₃O₁₀ was also found to terminate with a Ba-O layer. Possible mechanisms for the formation of these surface structures are discussed.     

Synthesis and structural characterisation of YSr2Cu3−xMxO7±y (M = Fe, Ti, Al, Co, Ga, Pb; 0.5 < x < 1), and the non-existence of the parent phase YSr2Cu3O7

The possibility of synthesising phases of general composition YSr₂Cu_3−xM_xO_7±y has been examined for a wide variety of metals M. Single phase tetragonal products (typically a = 3.83 Å, c = 11.5 Å) can be synthesised provided that the concentration of M is sufficiently large (x > 0.5), and M has a preference for the Cu(1) sites (the four-coordinate sites) of the YBa₂Cu₃O₇, structure. Neutron diffraction has demonstrated that a high degree of disorder exists in the (001) planes containing the M cations and, in particular, significant oxygen displacements are found. The non-existence of the unsubstituted variant YSr₂Cu₃O₇ is explained in terms of the high degree of compressive stress on the Cu(1) sites which could exist in such a material.     

Trapping mechanism of superconductivity suppression induced by Pr substitution in the Ho1−xPrxBa2Cu3O7−δ system

Pr concentration dependence of the superconducting transition temperature T_c in the Ho_1−xPr_xBa₂Cu₃O_7−δ system is determined from measurements of DC electrical resistance. This dependence coincides with that for the parallely studied Y_1−xPr_xBa₂Cu₃O_7−δ reference system. Both systems have the same value of the critical concentration x_c=0.58, in accordance with nearly equal ionic radii of Ho³⁺ and Y³⁺ ions. It has been shown that the T_c(x) curve can be described with a single mechanism based on a decreasing number of sheet holes trapped by Pr^IV-ions, if one takes also into account that the number of these ions changes with x.     

Ion-implantation-induced structural modifications in Y1Ba2Cu3O7−δ superconductor

Ion-implantation-induced structural modifications in Y₁Ba₂Cu₃O_7−δ superconductor are examined by a grazing angle X- ray diffraction technique. By employing a range of grazing angles from 0.3° to 10° it is shown that 100 KeV Ar⁺ inplantation of the superconductor leads to amorphization as well as modification of grain size and orientation at dose values lower than 10¹⁶ ions/ cm². At the dose of 5 × 10¹⁶ ions/ cm² the X-ray diffraction intensity is a factor of 6 less as compared to the original pellet, though the lines themselves are sharp. This shows coexistence of perovskite grains and amorphous matrix.     

Synthesis of YBa2Cu3O7−x superconducting thin films on LaAlO3 by means of PAMOCVD

High-T_c superconducting thin films have been deposited in situ by means of a plasma assisted metal-organic chemical vapour deposition (PAMOCVD) process on LaAlO₃. An EMCORE high-speed rotating disc reactor was used to deposit the films at a substrate temperature of 600°C to 800°C. The system is equipped with a (remote) 120 W microwave plasma generator. The oxidising plasma gas is N₂O and/or O₂ while Ar was used as the inert carrier gas for the different metal-organics. The influence of different process parameters (such as the temperatures of the metal-organics, substrate temperature, and plasma gas composition) on the superconductive properties and on the morphology of the films was investigated. Surface morphology and composition were studied by SEM/EDX or EPMA, and AC susceptibility measurements were used to investigate the superconductive properties (T_c and J_c). X-ray diffraction measurements indicated that single-phase YBa₂Cu₃O_7−x films were epitaxially grown with the 00l orientation perpendicular to the substrate surface. The critical temperature (T_c) of the films is about 90 K and the critical current density (J_c) is higher than 10⁶ A/cm² at 77 K and zero field.     

A new procedure for the preparation of Tl2Ba2CaCu2O8-δ characterization by neutron diffraction, electron diffraction and HREM

A new procedure for the preparation of Tl₂Ba₂CaCu₂O_8-δ is presented. In the first step stoichiometric amounts of Cu(NO₃)₂·3H₂O, Ba(OH)₂·H₂O, CaO and Tl₂O₃ are reacted in a closed alumina crucible at 760°C to form a mixture of Tl- 2212, CuO, CaO and other oxide phases. In the second step this material is milled, pelletized and fired in a gold-sealed alumina crucible at 860–900°C for three to eight hours. Three batches of Tl-2212 prepared by this method were investigated showing less than 1% loss of thallium while T_c was close to 110 K. Rietveld refinements using time-of-flight neutron-diffraction data demonstrate that the method produces pure material in a reproducible way and that the materials are substoichiometric with respect to oxygen (δ=0.3). Investigations using electron diffraction and high-resolution electron microscopy indicate the absence of stacking faults.     

(Tl, Pb, Cu)Sr2(Tl, Pb, Cu)2Cu2O8−δ: a nonsuperconducting Tl-1222 cuprate with both heavy atom single and oxygen depleted double layer motifs

An account is given of the synthesis and structural investigation of a newly discovered tetragonal (Tl, Pb, Cu)Sr₂(Tl, Pb, Cu)₂Cu₂O_8−δ compound (Tl-1222^* phase) with both (Tl, Pb, Cu)O single and oxygen depleted (Tl, Pb, Cu)₂O_x double layer motifs, space group I4/mmm, lattice parameters a=3.8405(2), c=29.2536(5) Å, and D_x=7.46 g cm⁻³. Micaceous and highly reflecting black single crystals of 1 mm×1 mm×3–5 μm size were obtained from a Tl₂O₃- and CuO-rich partial melt. The as-grown compound is nonsuperconducting. The very thin crystals are extremely liable to bend out of shape. Deterioration could not be observed within the period of a year under ambient conditions. The complex crystal structure has been solved using single crystals. We take note of the similarity of the unit cell dimensions to superconducting (Tl, Cu)₂Ba₂(Ca, Tl)Cu₂O₈ (Tl-2212 phase) with TlO double rocksalt layers, and compare crystal-chemical details of similar compounds. Apart from the possibility of obtaining superconducting properties by suitable doping, the mechanical properties of the new material are very attractive from the point of view of its use as highly scattering composite layers of an X-ray monochromator.     

The effect of Ag or Au overlayers on underlying YBa2Cu3O7 thin films

Although Ag and Au are commonly used to provide low-resistance contacts to YBa₂Cu₃O₇ (YBCO), their effect on the electrical properties of the underlying YBCO has been largely neglected. Epitaxial YBCO thin films on LaAlO₃ substrates were used in this study. Thin (50 nm) and thick (1 μm) layers of Ag or Au were deposited as overlayers, and in some cases annealed in oxygen at 550–650°C. Compared to samples with no metal overlayers, for both Ag and Au the normal-state parameters changed (resistivity, its temperature coefficient, and the transition width), whereas the transition temperature and critical current density remained unaltered. These results are encouraging for the use of these metals as contacts and/or conducting overlayers on YBCO.     

Infrared optical response of YBa2Cu3O7 and PrBa2Cu3O7 An ellipsometric study

Ellipsometry was used to study (110) and (001) oriented films of YBa₂Cu₃O₇ and PrBa₂Cu₃O₇ in the mid-and near-infrared spectral regions. Below a photon energy of 0.1 eV, the in-plane component of the dielectric tensor of YBa₂Cu₃O₇ is dominated by a Drude term with a squared plasma energy of (3.0 ± 0.3) eV². This “oscillator strength”, and the Lorentzian broadening energy of (0.104 ± 0.005) eV at room temperature, are confirmed by the changes induced in Pr-substituted material, and by low-temperature measurements in the near-infrared. The deviation from the Drude behavior observed above 0.1 eV is accounted for by a broad absorption band with an oscillator strength of (3.6 ± 0.1) eV² in YBa₂Cu₃O₇ which shifts to higher energies and takes over almost all of the oscillator strength of the Drude term when Y is substituted by Pr. The response to electric fields perpendicular to the planes is much weaker, with an upper bound of 0.63 eV² for the squared plasma energy. The in-plane loss function computed from the measured dielectric function follows the Drude-like lineshape, modified by the bound-state absorption band, down to the lowest energy reached in our measurements (0.058 eV).     

Preparation and superconducting properties of YBa2Cu4O8

Samples of YBa₂Cu₄O₈ are prepared by means of a new high oxygen pressure technique employing oxygen-HIP. Both magnetization and resistivity measurements show the superconductivity transition at 82.5 K. The lower and upper critical fields of YBa₂Cu₄O₈ are obtained from the magnetization measurements. The Ginzburg-Landau parameters, ζ(0)=17 Å, λ(0)=2400 Å, are estimated from these results.     

Ramans study of Y1−xPrxBa2Cu3O7−δ and YB2Cu3−xZnxO7−δ single crystals

Single crystals with known T_c values of Y_1−xPr_xBa₂Cu₃O_7−δ (Y---Pr1:2:3) and YBa₂Cu_3−xZn_3−xZn_xO_7−δ (Y---Zn1:2:3) systems are studied by Raman measurements. The Raman spectra for (Y---Pr1:2:3) single crystals show that the frequencies of Ba and O_z modes increase as the Pr content increases. The results are consistent with the hole-localization scheme proposed for the suppression of superconductivity in the polycrystalline Y---Pr1:2:3 systems. On the other hand, in the Y---Zn1:2:3 system, all the Raman modes do not change in frequencies. However, the FWHM of the Cu(2) mode increases with the decrease of T_c, indicating strong scattering of charge carriers by the substituted Zn ions in the CuO₂ planes. The induced disorder in the CuO₂ planes may be related with suppression of T_c in the Y---Zn1:2:3 system. Thus, the suppression mechanism in the Y---Zn1:2:3 systems seems to be different from that in the Y---Pr1:2:3 systems.     

Fabrication and characteristics of all YBCO sandwich-type junctions using highly crystalline DC sputtered superconducting a-axis oriented Y1Ba2Cu3O7-x films

We report on the fabrication and characteristics of sandwich-type tunnel junctions with highly crystalline sputtered a-axis oriented thin film of Y₁Ba₂Cu₃O_7-x (YBC) as the base and the counter electrode. The junctions have been fabricated on SrTiO₃ (100) and MgO (100) substrates. A non-superconducting phase of YBC corresponding to a lattice constant of 4.08 Å is used as the barrier layer making this an all YBC sandwich junction. For all temperatures below T_ce (R=0) of the device, a zero voltage current was observed. The critical current density (J_c) of the device was found to be dependent on the thickness of the barrier layer and the crystallinity of the a-axis oriented YBC electrodes. At 40 K, such a junction fabricated on a SrTiO₃ (100) substrate was found to have a J_c of 1.8 X 10⁴ A/cm² and an I_cR_n product of 0.2 mV.     

Phonon Raman scattering in Nd1+xBa2−xCu3O7−δ and Pr1+xBa2−xCu3O7−δ single crystals

The polarized Raman spectra of Nd_1+xBa_2−xCu₃O_7−δ (−0.023≤x≤0.107) and Pr_1+xBa_2−xCu₃O_7−δ (0.01≤x≤0.15) single crystals have been investigated. It was found that the Cu(2) A_g mode softens by 6 cm⁻¹ in Nd 1:2:3 and 4 cm⁻¹ in Pr 1:2:3 as x increases. These frequency shifts cannot be explained by the change in the relevant bond lengths due to Nd(Pr)-substitution for Ba. The variations with x of the two low frequency modes may be affected by change of their hybridization and/or change of their force constants. The linewidths of Ba mode in Pr 1:2:3 are broader than those in Y 1:2:3. This result suggests that the Pr substitution on Ba sites occurred even in a very small value of x. In x(yy) geometry the relative intensity of the Ba and O(4) modes in Nd 1:2:3 is greater than those in Pr 1:2:3. The difference between Nd 1:2:3 and Pr 1:2:3 in the relative intensity of the Ba and O(4) modes may be produced by the chains.     

Realization and properties of ramp-type YBa2Cu3O7−δ/Au/Nb junctions

All-thin-film ramp type Josephson junctions between YBa₂Cu₃O_7−δ and Nb have been fabricated. This procedure allows connections between high-T_c and low-T_c superconductors at different crystal sides of the high-T_c superconductor on one chip, which is of great interest for novel phase devices. A thin Au layer is incorporated as a chemical barrier to avoid oxygen transfer from the YBa₂Cu₃O_7−δ to the Nb. Critical current densities up to 600 A/cm² are obtained at T=4.2 K, with typical R_nA values of 0.8 μΩ cm². The variation of the magnetic field dependence of the critical current with the angle between the junction barrier and the YBa₂Cu₃O_7−δ crystal axes is explained by considering a predominant d_x²−y² order parameter symmetry of the YBa₂Cu₃O_7−δ. The successful fabrication of these junctions allows the implementation of novel superconducting electronics, such as complementary Josephson circuitry or proposed qubit concepts, using the unconventional order parameter symmetry of the high-T_c superconductor.     

High TcYBa2Cu3O7−δ superconducting transition-edge microbolometers

High T_c superconducting thin film YBa₂Cu₃O_7−δ (YBCO) bolometers have been fabricated on various substrates such as MgO, LaAlO₃, YSZ and Si using laser ablation technique. Performance of these IR bolometers operating with a Joule-Thomson refrigerator has been investigated. Measurements of the responsivity and low frequency noise near T_c in the current biased YBCO bolometers show that reliable devices can be fabricated. Measured noise equivalent power (NEP), for YBCO/YSZ bolometer, reaches 6 × 10⁻¹⁰W/Hz^1/2 at 165 Hz and has a responsivity of 60 V/W with a blackbody source. This performance is comparable to that of the optimized pyroelectric detectors. The characteristics of YBCO films deposited on Si substrates reveal that superconducting thin film multi-elements or focal plane array with silicon integrated readout circuit are feasible. Such bolometers exhibit NEP of 7 × 10⁻⁹W/Hz^1/2, and significant improvement appears possible. Electrical measurements show no noticeable film degradation after the bolometer is exposed to atmosphere for three months.