Cu2O/还原氧化石墨烯复合材料的构筑及其在NOx气体分子检测方面的应用

采用氧化石墨(GO)为碳源,CuSO4为铜源,葡萄糖为还原剂,70℃回流,制备得到Cu2O/还原氧化石墨烯复合材料.该复合材料具有层状结构,八面体的Cu2O粒子均匀地生长在还原氧化石墨的表面.采用Cu2O/还原氧化石墨烯复合材料组装成气敏元件,在室温下对NOx气体分子进行检测,结果表明,该材料在室温下对97.0 ppm NOx有很较好的气敏响应,灵敏度为17.42;以上,响应时间为13.33 s.该传感器的最低检测浓度为0.97 ppm NOx,对NOx分子具有非常高的气敏选择性.     

纳米Cu2O/Ag复合材料的制备、表征和抗菌活性研究

通过溶胶-凝胶法制备了单分散性的球形纳米Cu2O,采用无还原剂的取代反应法在上面负载一层纳米Ag,制备了核壳结构的Cu2O/Ag纳米复合材料.利用透射电镜(TEM)分析了纳米Cu2O/Ag的形貌、并用X射线衍射测(XRD)X射线光电子能谱(XPS)分析了其物相组成,利用紫外-可见光谱(UV-Vis)和光致发光光谱(PL)研究了其光谱特征,用大肠杆菌和金黄色葡萄球菌作为测试菌研究Cu2O/Ag抑菌性能.结果表明,Cu2O平均直径为150 nm,表面纳米Ag粒子直径为7 nm,形成核壳结构Cu2O/Ag对大肠杆菌抑菌率为93 ;, 对金黄色葡萄球菌为95;.     

Cu-Cu2O/RGO复合材料的制备及NOx气敏性能

采用改进Hummers方法制备氧化石墨(GO).以还原态氧化石墨与铜和氧化亚铜复合(Cu-Cu2O/RGO).对GO和Cu-Cu2O/RGO复合材料进行了TEM、FT-IR、XRD、SEM等表征.研究结果表明,氧化石墨为片状结构,其边缘处存在较为明显的褶皱和折叠,氧化石墨中含有大量的含氧的亲水官能团(如:羧基、羟基、羰基等).而在Cu-Cu2O/RGO复合材料中,Cu和Cu2O粒子能够比较均匀地分布于还原态氧化石墨的层间.另外,在室温下对Cu-Cu2O/RGO复合材料的NOx气体敏感性测试结果发现,当注入NOx后,其电阻下降,反之当脱离NOx时电阻又会上升到平缓位置;而且随着NOx的浓度递减,灵敏度也随之下降,表现出较好的响应-恢复气敏特性.     

氧化石墨烯与氧化锌复合材料的制备及室温NOx气敏性能研究

以Zn(NO3)2·6H2O为锌源,尿素为沉淀剂,氧化石墨烯(GO)为碳源,采用均匀沉淀法合成碱式碳酸锌与氧化石墨烯复合材料前驱体,350℃下焙烧前驱体2h,获得ZnO/GO复合材料,在室温下研究了该复合材料对NOx的气敏性能.通过X射线衍射、拉曼光谱、扫描电子显微镜和透射电子显微镜对材料的形貌和结构进行表征.结果表明,所得样品为六方ZnO与GO复合材料,ZnO纳米粒子较均匀的覆盖在GO的表面.当硝酸锌溶液浓度为0.3mol/L时,所合成的复合材料对NOx有较高的灵敏度,且注入NOx体积浓度97 ppm时,灵敏度为27.5;,响应时间1s,最低检测浓度可达0.97 ppm.     

MnO2/NiO纳米复合微球的制备及室温NOx气敏性能研究

采用低温沉淀法合成含有Mn和Ni的碳酸盐前驱体.经焙烧处理制备了MnO2/NiO纳米复合微球.采用SEM和XRD研究了复合材料的形貌和结构.结果表明:所制备的MnO2/NiO复合微球直径约为2μm.微球表面纳米粒子稀松的排列,且粒子端口呈介孔结构.在室温下,MnO2/NiO-2薄膜传感器对NOx具有较好的气敏响应.当NOx气体浓度为100 ppm时,灵敏度达36;,响应时间为11s.MnO2/NiO-2传感器对NOx气体的最低检测线为3 ppm.     

Ni/NiO纳米复合材料的制备及其室温下NOx气敏性研究

采用静电纺丝法合成了直径为300 nm Ni(CH3COO) 2/PS纳米纤维,并且通过煅烧得到Ni/NiO纳米复合材料.对Ni/NiO纳米复合材料的NOx气敏性检测研究发现,该材料在室温下对97 ppm NOx有很较好的气敏响应,灵敏度可达到30;以上,响应时间小于4 min.     

水热/溶剂热法制备锂电池负极材料碳气凝胶/Fe2O3及其电化学性能

采用水热/溶剂热法,通过在碳气凝胶(CA)表面负载纳米Fe2O3颗粒,制备了具有不同外观形貌的CA/Fe2O3复合负极材料.通过X射线粉末衍射(XRD)、扫描电镜(SEM)和热重(TG)等测试手段表征了碳气凝胶、Fe2O3及CA/Fe2O3的结构、形貌和Fe2O3负载率,并对复合负极的电化学储锂性能进行了研究.结果表明,采用水热或溶剂热法时,在碳气凝胶表面合成的Fe2O3颗粒分别呈橄榄球状和微球状.电化学结果表明,采用溶剂热法合成的CA/Fe2O3复合材料作为锂电池负极材料具有较高的储锂容量和倍率性能,在100 mA·g-1电流密度下循环50次,可逆容量为634.9 mAh·g-1,充电容量保持率高达97.9;.     

石墨烯/Fe3O4/TiO2磁性纳米复合材料的光催化性能研究

利用石墨烯纳米(GNs)片作为载体,将钛酸四正丁酯包裹Fe3O4纳米粒子的微乳液通过搅拌和超声负载于其表面或镶嵌于其二维结构的片层间,制备GNs/Fe3O4/TiO2磁性复合光催化材料.通过FrIR、SEM、TEM、EDX、XRD、VSM等手段对样品进行了表征,并对其光催化机理进行了分析.测试结果表明,TiO2含量对复合材料的光催化性能有显著影响,对对硝基苯酚和罗丹明B的光催化降解率最高分别可达96.0;和98.3;.     

CuO/氧化石墨烯复合材料合成、表征及光催化研究

以醋酸铜Cu(Ac)2和氧化石墨烯(GO)为原料,去离子水作溶剂,十六烷基三甲基溴化铵(CTMAB)为表面活性剂,通过水热反应制备了CuO/GO纳米复合材料.傅里叶红外光谱(FT-IR)、X-射线粉末衍射(XRD)以及光电子能谱仪(XPS)和透射电镜(TEM)对合成的复合材料结构表征以及形貌分析,结果发现CuO纳米粒子均匀地分散在GO上.并将制备的复合材料对罗丹明B溶液进行光催化降解研究,结果发现在光反应80 min后,罗丹明B的浓度降低率达到85;,因此CuO/GO复合材料对罗丹明B表现出了良好的光催化性能.     

三维花状Ni(OH)2/CNT纳米复合材料制备及NOx气敏性能研究

为了制备室温下对NOx气敏性能优异的纳米材料,本文采用简单的一步回流法制备出呈三维花状的Ni(OH)2/碳纳米管(CNT)纳米复合材料.分别采用XRD、SEM、TEM等表征手段研究了复合材料的形貌和结构.结果表明:三维花状结构是由Ni(OH)2纳米薄片层层堆叠组装起来的,CNT很好的嵌入在花状结构内.该材料在室温条件下对NOx有较好的气敏性能,当CNT的加入量为20 mg时,对于97 ppm NOx气体响应最快为8 s,灵敏度可达到24;,最低检测限为0.97 ppm.对其气敏机理进行研究发现,CNT的加入,有利于提高该复合材料的导电性能和气体的传输能力.该复合材料具有3D结构和独特的化学组成有望在气敏器件、催化等领域得到广泛的应用.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Synthesis and structure of new phases of the Am?1Bi2BmO3m+3 (m = 2) type

Three polycrystalline bismuth-containing layered perovskite-like oxides are synthesized by high-temperature solid-state reactions. One of these compounds was described previously, namely, Bi₃Ti_1.5W_0.5O₉, for which the unit cell parameters a = 5.372(5) Å, b = 5.404(4) Å, and c = 24.95(2) Å are determined in this study. The other two compounds, namely, Na_0.75Bi_2.25Nb_1.5W_0.5O₉ with the unit cell parameters a = 5.463(1) Å, b = 5.490(7) Å, and c = 24.78(0) Å and Ca_0.5Bi_2.5Ti_0.5Nb_1.5O₉ with the unit cell parameters a = b = 3.843(2) Å and c = 24.97(6) Å, are synthesized for the first time. The compositions of these compounds are based on the composition of the well-known compound Bi₃TiNbO₉ with a high Curie temperature (T _C = 1223 K), in which bismuth, niobium, and titanium atoms are partially or completely replaced by other atoms. The experimental and calculated interplanar distances determined from the X-ray diffraction patterns of the studied compounds are presented. __________ Translated from Kristallografiya, Vol. 50, No. 1, 2005, pp. 59–64. Original Russian Text Copyright ? 2005 by Geguzina, Shuvaev, Shuvaeva, Shilkina, Vlasenko.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers

We propose a new growth scheme of digitally alloyed modulated precursor flow epitaxial growth (DA-MPEG) using metalorganic and hydride precursors for the growth of Al_xGa_1−xN layers with high-Al content at relatively low temperatures. The growth of high-quality, high-Al content Al_xGa_1−xN layers (x_Al>50%) that are composed of AlN and Al_yGa_1−yN monolayers on AlN/sapphire template/substrates by DA-MPEG was demonstrated. The overall composition of the ternary Al_xGa_1−xN material by DA-MPEG can be controlled continuously by adjusting the Column III mole fraction of the atomic Al_yGa_1−yN sub-layer. X-ray diffraction and optical transmittance results show that the AlGaN materials have good crystalline quality. The surface morphology of DA-MPEG AlGaN samples measured by atomic force microscopy are comparable to high-temperature-grown AlGaN and are free from surface features such as nano-pits.     

Crystallization behaviours ofCo100−1(x+y)NbxBy amorphous alloys

The crystallization behaviours of Co_100?1(x+y)Nb_xB_y amorphous alloys were investigated by means of differential thermal analysis and a conventional X-ray diffractometer. The crystallization sequences are discussed in terms of the equilibrium phase diagram of the ternary alloy system.Assuming crystallization occurs as a result of nucleation and growth, the stabilizing effect of eutectic phase separation on the crystallization is shown by introducing the effective free energy of the critical nucleus.