Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy

Feasibility of growth of InGaAs ridge quantum wire (QWR) hexagonal network structures by atomic hydrogen (H^*)-assisted selective molecular beam epitaxy (MBE) is investigated for use in novel hexagonal quantum circuits based on the binary-decision diagram (BDD) architecture. The fabricated structures were characterized in detail by SEM, AFM, PL and CL measurements.

By using patterned substrates with mesa-pattern directions of 1 0 0– and 5 1 0– together with optimized H^*-assisted selective MBE, hexagonal networks of the sharp and uniform InGaAs ridge structures were realized down to submicron pitches. Embedded InGaAs QWR hexagonal networks were successfully formed on the ridge structures, giving prospects of realizing a node device density lager than 10⁸ cm⁻².     

Fabrication of BDD quantum node switches on embedded GaAs quantum wires grown by selective MBE

In view of applications to hexagonal binary decision diagram (BDD) LSIs, a first attempt is made to form quantum BDD node switches on selectively grown (SG) embedded quantum wires (QWRs) by molecular beam epitaxy (MBE). SG branch switches controlled by a Schottky wrap gate (WPG) were successfully fabricated by MBE growth and subsequent device processing. Gate control characteristics were studied by gate-dependent Shubnikov–de-Haas measurements, and the behavior was found to be similar to that of devices fabricated on wires by etching. The switch exhibited clear conductance quantization at low temperature, and temperature dependence of the voltage slope of conductance jump was clarified. A Y-branch BDD node device using two SG branch switches was successfully fabricated, and realized clear path switching characteristics.     

Quantum dots in quantum well structures

Recent progress toward fabricating and characterizing quantum dots in III–V quantum well structures is reviewed. Quantum dots made by use of lithography and etching, including deep-etched, barrier-modulated, strain-induced and interdiffused quantum dots, are described. Quantum dots fabricated by growth, including natural quantum dots, dots on patterned substrates, and self-assembled dots, are discussed. Dot sizes and uniformity, energy-level splittings, and luminescence efficiencies that are now being achieved are discussed. The status of key issues, such as the energy relaxation in quantum dots, is mentioned.     

A quantum electromechanical device: the electromechanical single-electron pillar

A new nanoelectromechanical device is introduced, useful for quantum electromechanics. The focus will be on single-electron transistors with a mechanical degree of freedom. The technical approach as well as the experimental realization of a new vertical mechanical single-electron tunneling device are discussed. This transistor is fabricated in a semiconductor material, forming a nanopillar between source and drain contacts. This concept can readily be transferred to large scale fabrication, being of importance for building integrated sensors and amplifier stages for quantum electromechanical circuits. Operation of the device at room temperature in the frequency range of 350–400 MHz is presented. A straightforward theoretical model of device operation is given.     

Comparison of cross-talk effects between colloidal quantum dot and conventional waveguides

We present cross-talk calculations for a subdiffraction nanophotonic waveguide that consists of a colloidal quantum dot (QD) array 10 nm in diameter and compare the results with conventional continuous dielectric waveguides, assuming the same 10 nm size as well as a 200 nm cutoff diameter for guided mode. We find that the QD cascade has much lower cross talk than 10 nm dielectric waveguides at an identical separation >30 nm. Moreover, results for 200 nm dielectric waveguides at a 280 nm gap are comparable with those of QD structures spaced 110 nm apart. Hence the proposed QD device is potentially superior to conventional waveguides in achieving lower cross talk in the subdiffraction regime and provides a new route to achieving high-density photonic integrated circuits.     

Adaptive computation by interacting quantum dots

We present a theoretical study and discussion of computationally useful nanoelectronic circuits which use adaptive control methods both to achieve the circuit function and to compensate for unpredictable nonuniformities in the circuit environment. In the regime where the scaling of conventional digital electronics breaks down, nanoelectronic circuitry will be required to perform robustly in the presence of inevitable device–device interactions, sensitivity to circuit parameters of quantum devices, and deviations from ideal circuit design. To examine the role of adaption in addressing these issues, we focus on a specific class of scaleable circuit architectures composed of Coulombically interacting polarizable anisotropic quantum dots which include input polarization dots, output polarization dots, and an array of processing dots. We implement the adaptive control of these circuits by assuming that particular features of the processing dots such as energy barriers, charge, shape, or orientation can be experimentally modified. A method of adaptive feedback is used to modify the processing dots and produce desired correlations between the input and output dot polarizations as computed by the circuit. A variational quantum Monte Carlo method has been used to simulate the many-body response of model GaAs dot circuits in which the mutual orientation of the dots is adapted to successfully achieve different desired patterns of correlation. We demonstrate the robustness of the adaptive circuits for circuit nonuniformities and for sensitivity to circuit parameters due to quantum effects.     

Linear optics implementation for quantum game under quantum noise

It has recently been shown that linear optics alone would suffice to implement efficient quantum computation. Quantum computation circuits using coherent states as the logical qubits can be constructed from very simple linear networks, conditional measurements and coherent superposition resource states. We present the quantum game under quantum noise and a proposal for implementing the noisy quantum game using only linear optics.     

Electroluminescence of excitons in an InGaAs quantum well

We report on electrical injection of excitons in a quantum well placed in the intrinsic region of a p–i–n photodiode. Both the narrow linewidth of the electroluminescence at 70 K and the evolution of the emission spectra with increasing current are signatures of the excitonic character of the emission. This structure is ready to be integrated in semiconductor microcavities in order to evidence the strong coupling regime under electrical injection.     

Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots

Current–voltage and low frequency excess electrical noise characteristics of two different—Schottky diode and n-i-n diode—GaAs structures embedded with self-assembled In(Ga)As quantum dots are reported. We find the growth of quantum dots induces defects not only near the quantum dot but also extended to quite a distance toward the growth direction. In Schottky diode structure, comparing with the reference sample without the quantum dot layer, the current dependence of the low frequency noise spectral density indicated that the noise is from the generated interface states with the density increasing towards the band tail. Also the crystal quality of the Schottky diode including the quantum dot layer, deduced from the Hooge parameter, was slightly worse than that of the reference sample. For n-i-n diode structure, the current–voltage relation was linear, and a quadratic current dependence of the noise spectral density was observed. The Hooge parameter for the n-i-n structure was determined to be on the order of unity indicating the general degradation of the structure.     

Nanoscale superconducting quantum bits

Various physical systems were proposed for quantum information processing. Among those nanoscale devices appear most promising for integration in electronic circuits and large-scale applications. We discuss Josephson junction circuits in two regimes where they can be used for quantum computing. These systems combine intrinsic coherence of the superconducting state with control possibilities of single-charge circuits. In the regime where the typical charging energy dominates over the Josephson coupling, the low-temperature dynamics is limited to two states differing by a Cooper-pair charge on a superconducting island. In the opposite regime of prevailing Josephson energy, the phase (or flux) degree of freedom can be used to store and process quantum information. Under suitable conditions the system reduces to two states with different flux configurations. Several qubits can be joined together into a register. The quantum state of a qubit register can be manipulated by voltage and magnetic field pulses. The qubits are inevitably coupled to the environment. However, estimates of the phase coherence time show that many elementary quantum logic operations can be performed before the phase coherence is lost. In addition to manipulations, the final state of the qubits has to be read out. This quantum measurement process can be accomplished using a single-electron transistor for charge Josephson qubits, and a d.c.-SQUID for flux qubits. Recent successful experiments with superconducting qubits demonstrate for the first time quantum coherence in macroscopic systems.     

Screening model of magnetotransport hysteresis observed in bilayer quantum Hall systems

We report on theoretical and experimental investigations of a novel hysteresis effect that has been observed on the magnetoresistance of quantum Hall bilayer systems. Extending to these system a recent approach, based on the Thomas–Fermi–Poisson nonlinear screening theory and a local conductivity model, we are able to explain the hysteresis as being due to screening effects such as the formation of “incompressible strips”, which hinder the electron density in a layer within the quantum Hall regime to reach its equilibrium distribution.     

Nonequilibrium Zeeman splitting in quantum transport through nanoscale junctions

We calculate the differential conductance G(V) through a quantum dot in an applied magnetic field. We use a Keldysh conserving approximation for weakly correlated and the scattering-states numerical renormalization group for the intermediate and strongly correlated regime out of equilibrium. In the weakly correlated regime, the Zeeman splitting observable in G(V) strongly depends on the asymmetry of the device. In contrast, in the strongly correlated regime the position Δ(K) of the Zeeman-split zero-bias anomaly is almost independent of such asymmetries and of the order of the Zeeman energy Δ(0). We find a crossover from the purely spin-fluctuation driven Kondo regime at small magnetic fields with Δ(K)<Δ(0) to a regime at large fields where the contribution of charge fluctuations induces larger splittings with Δ(K)>Δ(0) as it was observed in recent experiments.     

Extended entanglement to quantum networks

Connecting individual quantum systems through quantum channels leads to develop quantum networks crucial to perform multipartite communication or quantum cryptography. We present two techniques to generate entanglement among different parties at larger scale. In the first approach cavity QED technique is used to produce extended entanglement in atomic internal and external degrees of freedom. In this scheme we entangle two tagged atoms in their momentum state with cavity fields. Later, interaction of two auxiliary atoms with the two cavity fields in non-dispersive and dispersive fashion transforms the atoms–fields entanglement to atoms–atoms entanglement. Quantum measurement on auxiliary atoms generates extended entangled state in atomic degrees of freedom. In the second approach we take three cavities in which the two cavities have separate entangled state with third cavity in two modes which are distinguishable. Applying quantum measurement process on third cavity, we develop extended entangled state among the three cavities. We provide experimental parameters to realize the work in laboratory experiment.     

Electronic and structural properties of hydrogen on semiconductor surfaces

In this paper we will review the scientific literature which addresses the atomic geometry and electronic structure of clean and hydrogenated semiconductor surfaces. In particular, results related to vibrational studies will be presented. First, surfaces of elemental semiconductors (Ge, Si), Ge/Si-alloys, and III–V compound semiconductors chemisorb in a first stage atomic hydrogen by saturating surface atom dangling bonds. In a second step surface bonds are broken and a change of the geometrical structure results. Finally, higher hydrogen exposures are able to etch semiconductor surfaces. Best understood to date are surfaces of Si(1 0 0), Si(1 1 1), Ge_xSi_1−x(1 0 0), and III–V's after cleavage which have been modeled by dimerized and undimerized structures. (1 0 0) surfaces of III–V semiconductors, like GaAs and InP, tend to be dimerized, too.     

Reservoir induced activation of a quantum neuron

Artificial neural networks are one of the building blocks of artificial intelligence. And their quantum versions have a superior performance possibility. This work proposes an open quantum neuron as a unit structure of an open quantum network and demonstrates that it can be activated through the connected reservoir. It's been shown that the model successfully classifies the temperature data coming from distinct quantum thermal reservoirs and exhibits an activation through the reservoir parameters. Also, a possible physical version of the model operating in the microwave regime discussed to be three orders of magnitude faster than the classical classifiers.     

Remarks on quantum symmetry

We discuss the concept of Quantum Symmetry in quantum field theory, and in particular the role of the gauge principle. We present a scheme how quantum symmetries can be realized in a Hilbert space, and sketch its construction from the theory of superselection sectors of the gauge invariant (observable) quantities. The approach is independent of (Drinfeld's) quantum groups.Presented at the Colloquium on the Quantum Groups, Prague, 18–20 June, 1992.     

飞秒激光直写光量子逻辑门

量子比特在同一时刻可处于所有可能状态上的叠加特性使得量子计算机具有天然的并行计算能力,在处理某些特定问题时具有超越经典计算机的明显优势.飞秒激光直写技术因其具有单步骤高效加工真三维光波导回路的能力,在制备通用型集成光量子计算机的基本单元—量子逻辑门中发挥着越来越重要的作用.本文综述了飞秒激光直写由定向耦合器构成的光量子比特逻辑门的进展.主要包括定向耦合器的功能、构成、直写和性能表征,集成波片、哈达玛门和泡利交换门等单量子比特逻辑门、受控非门和受控相位门等两量子比特逻辑门的直写加工,并对飞秒激光加工三量子比特逻辑门进行了展望.     

Shape effects on the ground-state energy of a three-electron quantum dot

In this work we will theoretically study the ground-state electronic structure of three-electron polygonal quantum dots by means of the configuration interaction method. Transition from a weakly correlated regime to a strongly correlated regime is investigated for quantum dots with hexagonal, square, and triangular geometries. Our numerical results reveal that the ground-state spin and the charge density distribution of the system are sensitive to the shape of the quantum dot.     

The fabrication technique and electrical properties of a free-standing GaN nanowire

We fabricated a free-standing structure of a GaN nanowire by selectively etching Si₃N₄, previously grown on a SiO₂ substrate, for application to three-dimensional integrated circuits such as nanorelays and actuators. In the nanowire-deposition process we adopted electrophoresis and reactive ion etching techniques to achieve a well-aligned and free-standing nanowire. The electrical transport measurements were performed from room temperature down to liquid-nitrogen temperature. The current–voltage (I–V) characteristics showed a rectifying behavior in the whole temperature range. We analyze this property as a Schottky barrier formation between the nanowire and electrodes. PACS  61.46.+w; 73.22.-f; 73.40.Ei; 81.07.Bc; 81.16.Rf     

Few-electron quantum dot fabricated with layered scanning force microscope lithography

Few-electron quantum dots with integrated charge read-out have been fabricated by layered local anodic oxidation of a Ga[Al]As heterostructure and a thin Titanium top gate. The additional set of gates provided by the metallic film is used to tune the quantum dots into the few-electron regime. Current through the quantum dots and the quantum dot charge have been simultaneously measured for electron numbers varying between zero and two. The singlet–triplet splitting varies in two different samples between 0.5 and 1.5 meV. The Zeeman splitting of the first conductance resonance is observed in parallel magnetic field. The high tunability and straightforward implementation of these structures are promising for future nanostructure design.