Electron cooling in three‐dimensional Dirac fermion systems at low temperature: Effect of screening

Hot electron cooling rate P, due to acoustic phonons, is investigated in three‐dimensional Dirac fermion systems at low temperature taking account of the screening of electron–acoustic phonon interaction. P is studied as a function of electron temperature T_e and electron concentration n_e. Screening is found to suppress P very significantly for about T_e < 0.5 K and its effect reduces considerably for about T_e > 1 K in Cd₃As₂. In Bloch–Grüneisen (BG) regime, for screened (unscreened) case the T_e dependence is P ～ T_e⁹(T_e⁵) and the n_e dependence gives P ～ n_e^–5/3 (n_e^–1/3). The T_e dependence is characteristic of 3D phonons and n_e dependence is characteristics of 3D Dirac fermions. The plot of P /T_e⁴ vs. T_e shows a maximum at temperature T_em which shifts to higher values for larger n_e. Interestingly, the maximum is nearly same for different n_e and T_em/n_e^1/3 being nearly constant. More importantly, we propose, the n_e dependent measurements of P would provide a clearer signature to identify 3D Dirac semimetal phase. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

The Dual Mode Microwave Afterglow Apparatus for Measuring the Electron Temperature Dependence of the Electron‐Ion Recombination

Three dual mode microwave apparatus (one using S ‐band and two using X ‐band) have been developed to determine ambipolar diffusion and electron‐ion recombination rates under conditions such that T_gas = 300K and T_e is varied from 300 K to 6300 K, in the afterglow period of the dc glow discharge. TheTM₀₁₀ cylindrical cavity (in S ‐band) and TM₀₁₁ open cylindrical cavity (X ‐band) are used to determine the electron density during the afterglow period and a non‐resonant waveguide mode is used to apply a constant microwave heating field to the electrons. To test the properties of the apparatus the neon afterglow plasma has been investigated. At T_e = 300 K a value of α (Ne⁺₂) = (1.7± 0.2) × 10^–7cm³/s is obtained which is in good agreement with values of other investigators. Also similar variations of α as T^–0.4_e (S ‐band) and as T^–0.42_e (X ‐band) obeyed over the range 300 ≤ Te ≤ 6300K are in good agreement with some other previous measurements. The simplicity of the X‐band microwave apparatus also allows the measurements of the gas temperature dependency and the study of electron attachment and may be used simultaneously with optical or mass spectrometry investigations. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Untersuchungen zum Existenzbereich einer BOLTZMANN-Verteilung im Argonbogenplasma

Using as plasma source a wall stabilized argon arc working within a restricted parameter range (inner tube diameter = 7 mm, pressure = 30–120 Torr, current = 5-20 A)) the existence of a Boltzmann equilibrium between spectral energy levels is checked by comparing measured occupation number densities of higher excited levels (N_{m, exp}) with the corresponding number densities calculated under the assumption of Boltzmann equilibrium (N_{m, calc}). The methods for determination of the quantities N_{m, exp'} T_g (2300–5405°K), T_e (7170–9950°K) and N_e (0.33 – 2.4 × 10¹⁵ cm^?3) needed for this comparison are described. It can be shown within the limit of experimental error that a Boltzmann equilibrium exists at least for electron densities of N_e > 3 · 10¹⁴ cm^?3. The problem of energy balance of that type of arcs used in these experiments is discussed.     

DC Townsend Discharge in Nitrogen: Temperature‐Dependent Phenomena

Low‐current Townsend discharge in nitrogen has been studied in the temperature range of T = 100–300 K in a semiconductor‐gas‐discharge structure. It was found that the sustaining voltage U_S increases with time when a current is passed through the structure at low T. This effect was not observed at room temperature. A hypothesis is put forward that a film of a neutral phase of nitrogen is formed on the electrodes under cryogenic discharge conditions. The presence of the condensed thin‐film phase leads to a decrease in the secondary electron emission from the electrode and to a corresponding increase in U_S. A possible mechanism of the phenomenon is associated with the formation of large neutral aggregates in the form of [N⁺₂(N₂)_n]^– in the gas discharge volume. The condensation of these aggregates seems to yield a phase that is comparatively stable at cryogenic temperatures (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Double‐probe measurement in recombining plasma using NAGDIS‐II

We have studied the validity of the double‐probe method in recombining plasmas. Electron temperature (T_e) measured with a double probe was quantitatively evaluated by taking into account the influences of plasma potential fluctuation, plasma resistivity, and electron density fluctuation on the current–voltage characteristics. Differential potential fluctuation and plasma resistivity between two electrodes have a minor effect on T_e especially when the inter‐distance is small (typically 1 mm). Scattering of measured T_e due to the density fluctuation was sufficiently suppressed by making the data acquisition time long (typically 4 s) and taking the average. There is a good agreement between T_e measured with the optimized double‐probe method and that with laser Thomson scattering diagnostics.     

双温度氦等离子体输运性质计算

获得覆盖较宽温度和压力范围内的等离子体输运性质是进行等离子体传热和流动过程数值模拟的必要条件.本文采用Saha方程计算等离子体组分, 采用基于将Chapman-Enskog方法扩展到高阶近似的方法, 计算获得了电子温度(T_e)不等于重粒子温度(T_h)的情形下, 在300 K到40000 K的温度范围内氦等离子体的黏性、热导率和电导率. 研究结果表明压力和热力学非平衡参数(θ =T_e/T_h)对氦等离子体的输运性质有较大的影响. 在局域热力学平衡条件下,计算获得的氦等离子体输运性质和文献报道的数据符合良好.     

Atomic Model Calculations of Gain Saturation in the 46.9 nm Line of Ne‐like Ar

The gain saturation in the 46.9 nm line of the Ar⁺⁸ laser is analyzed using an atomic kinetics code. The dependence of the gain (G) on the electron kinetic temperature (T_e) in the region (50 ‐150 eV) is calculated in the quasi steady‐state approximation for the different values of the electron density (N_e) and the plasma radius (r_pl). The influence of radiat on trapping, ion random and mean velocities, Stark line broadening and refraction losses on the gain saturation is taken into consideration. For r_pl = 150‐600 μm, the amplplication (G > 0 cm^‐1) exists in the large temperature/density domain (T_e = 60‐150 eV, N_e = 0.5‐10 × 10¹⁸ cm^‐3). However, the value G_s ∼ 1.4 cm^‐1 required for the gain saturation at the typical plasma length L_pl ∼ 15 cm is reached in the extremely narrow density regions at the high temperatures. The saturation is reached for r_pl = 600 μm at T^s_e = 150 eV in the region N^s_e = 1.8‐2 × 10¹⁸ cm ^‐3, for r_pl = 300 μm at T^s_e = 125 eV and N^s_e = 2.5‐3 × 10¹⁸ cm^‐3, and for r_pl = 150 μm at T^s_e = 110 eV and N^s_e = 3‐4 × 10¹⁸ cm^‐3. The broadest density region (N^s_e = 2 ‐8 × 10¹⁸ cm^‐3) is predicted for the narrowest column (r_pl = 150 μm) at the highest temperature (T^s_e = 150 eV). The operation in the broadest density region N^s_e, should make easier achievement of the gain saturation in the experiments.     

Autosolitons in electron-hole plasma in p-Ge

The self-organization of an electron-hole plasma (EHP) heated by an electric field in pure p-Ge samples at T = 77 K has been studied experimentally. The derived current-voltage characteristics (CVCs) and the distributions of the electric field and IR emission of the hot carriers along the samples show that the segments of a steep rise or the S-shaped segments of the CVCs in samples with n-p junctions are related to the formation of longitudinal thermal-diffusion autosolitons (AS_‖); as a result, thin (d = 2–20 μm in diameter), melted-through current channels appear. Such AS_‖ are formed at high EHP densities (n ≥ 1 × 10¹⁶ cm⁻³), when the electron-hole scattering is dominant, and at electron temperatures T _e = (2–4.5)T ₀ (T ₀ is the lattice temperature). The saturation segments and the N-shaped segments in the CVCs are attributable to the generation of transverse thermal-diffusion high-field autosolitons (AS_⊥) in the form of narrow strata with electric field strengths = 1–20 kV cm⁻¹. High-field AS_⊥ are formed at EHP densities n = 5 × 10¹³−1 × 10¹⁶ cm⁻³, when the electron-phonon scattering is dominant, and at electron temperatures T _e ∼ Θ ≥ 5T ₀ (Θ is the Debye temperature). The generated longitudinal and transverse autosolitons have high temperatures (T _e ≥ 1000 K) and reduced carrier densities and can exist simultaneously in different parts of the sample. Original Russian Text ? M.N. Vinoslavskiĭ, P.A. Belevskii, A.V. Kravchenko, 2006, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2006, Vol. 129, No. 3, pp. 477–492.     

Initiation and Sustainment of Unipolar Arc Discharges by a Microsecond Pulse Plasma

Unipolar arcs have been produced by contacting metal surfaces with microsecond pulse plasmas. Plasma temperature T_e, density n_e and potential (with respect to ground) were controlled in the limits 7–12 eV, 10¹⁸–10¹⁹ m^?3, 20–40 V, respectively, and the influence of these parameters on arc current amplitude (50–500 A) and ignition probability has been investigated. It was found that the ignition is the most limiting process requiring surface contaminations as well as the transport of net currents to the surface. The amplitude of the current was proportional to n_eT_e^1/2.     

Gasket temperature: an alternate technique for estimating sample temperature in a multi-anvil apparatus

It is common for sample temperatures to be estimated by the power input to the furnace in multi-anvil experiments in which a thermocouple cannot be used or the thermocouple failed during heating. Uncertainties using this technique are often on the order of ±85°C or larger. This paper describes a new method for estimating sample temperature using a second thermocouple outside all pressure media. Temperatures recorded at this external (gasket) thermocouple trend linearly with the internal (sample) thermocouple temperature. Because of thermal lag, it is necessary to determine the first gasket temperature (T₀) corresponding to the desired sample temperature. Accurate prediction of T₀ for the desired sample temperature can come from relatively few (5–6) gasket-temperature measurements made during the initial temperature ramp over a small temperature range (500–600°C). Using this method and manually ramping to T₀ allows for uncertainties in sample temperature estimation as small as ±20°C.     

Influence of Plasma Resistance and Fluctuation on Probe Characteristics in Detached Recombining Plasmas

In order to find the causes of the strong anomaly of current‐voltage characteristics of Langmuir probe observed in detached recombining plasmas in a linear divertor plasma simulator, NAGDIS‐II, we have investigated plasma resistance along a magnetic field and potential fluctuations in the detached recombining plasmas. Simple calculation on the ratio between the plasma length, at which plasma resistance and resistance of ion sheath formed around a probe tip become equal, and an electron collection length indicates that the evaluation of electron temperature T_e becomes inaccurate at T_e of less than 0.6 eV when plasma density and neutral pressure are 1.0 × 10¹⁸ m^—3 and 10 mtorr, respectively. The potential fluctuation in detached recombining plasmas was found to be so large compared to T_e/e, which can also modify the probe characteristics.     

Path integral approach for Stark broadening of Lyman lines in hydrogen plasma

New results for Lyman lines from hydrogen plasmas are presented using the path integral approach. The influence of plasma components (electrons and ions) on the radiator is analysed separately. The ionic contribution is treated within the path integral approach, while the electronic contribution is estimated by the standard collision operator. The Stark effect, including the ion quadrupole contribution, is considered. The time‐dependent ionic microfield is treated within the path integral approximation using the model microfield method (MMM). The comparison with the quantum statistical approach is performed using a wide range of temperatures (T = 10⁴–10⁷ K) and electron densities (N_e = 10²³–10²⁶ m^?3). Good agreement is mainly obtained for low density and high temperature.     

Collective Grain Interactions II. Non‐linear Collective Drag Force

It is found that the collective effects operating at large distances from the grain surface can produce substantial scattering of the ion flux and create an additional collective drag force dominant for large grain densities. The consideration is restricted to large grain charges β = Z_de ²a /T_iλ_Di ? 1 and T_i /T_e ? 1 (–eZ_d being the grain charge in units of electron charge, a being the grain size, λ_Di being the ion Debye radius and T_e,i being electron and ion temperatures, respectively). For present dusty plasma experiments β ≈ 10–50, the large charges of grains are screened non‐linearly and the ion scattering creates non‐linear drag force. The present investigation considers effects of scattering by collective grain fields at large distances from the grains. It is found that the physical reason of the importance of collective drag force, calculated in this paper, is related to presence of weakly screened collective field of grains outside the non‐linear screening distance depending on grain densities. The amplitude of this collective fields of the grains is determined by non‐linear screening at non‐linear screening radius. It is shown that for dust densities of present experiments the collective drag force related to this scattering can be of the order of the non‐linear drag force caused by scattering inside the non‐linear screening radius or even larger. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Diagnostics of Tin Plasma Produced by Visible and IR Nanosecond Laser Ablation

We present the optical emission spectroscopic studies of the Tin (Sn) plasma, produced by the fundamental (1064 nm) and second (532 nm) harmonics of a Q switched Nd: YAG pulsed laser having pulse duration of 5 ns and 10 Hz repetition rate which is capable of delivering 400 mJ at 1064 nm, and 200 mJ at 532 nm using Laser Induced Breakdown Spectroscopy (LIBS). The laser beam was focused on target material by placing it in air at atmospheric pressure. The experimentally observed line profiles of four neutral tin (Sn I) lines at 231.72, 248.34, 257.15 and 266.12 nm were used to extract the electron temperature (T_e) using the Boltzmann plot method and determined its value 6360 and 5970 K respectively for fundamental and second harmonics of the laser. Whereas, the electron number density (N_e) has been determined from the Stark broadening profile of neutral tin (Sn I) line at 286.33 nm and determined its value 5.85 x 10¹⁶ and 6.80 x 10¹⁶cm^–3 for fundamental and second harmonics of the laser respectively. Both plasma parameters (T_e and N_e) have also been calculated by varying distance from the target surface along the line of propagation of plasma plume and also by varying the laser irradiance. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electron‐Ion Relaxation,Phase Transitions,and Surface Nano‐Structuring Produced by Ultrashort Laser Pulses in Metals

Fundamental physical phenomena in metals irradiated by ultrashort laser pulses with absorbed fluences higher than few tens of mJ/cm² are investigated. For those fluences, laser‐produced electron distribution function relaxes to equilibrium Fermi distribution with electron temperature T_e within a short time of 10‐100 fs. Because the electron subsystem has T_e highly exceeding much the ion subsystem temperature T_i the well‐known twotemperature hydrodynamic model (2T‐HD) is used to evaluate heat propagation associated with hot conductive electron diffusion and electron‐ion energy exchange. The model coefficients of electron heat conductivity κ (?, T_e, T_i) and electron‐ion coupling parameter α (?, T_e) together with 2T equation of state E (?, T_e, T_i) and P (?, T_e, T_i) are calculated. Modeling with 2T‐HD code shows transition of electron heat wave from supersonic to subsonic regime of prop‐agation. At the moment of transition the heat wave emits a compression wave moving into the bulk of met al. Nonlinear evolution of the compression wave after its separation from the subsonic heat wave till spallation of rear‐side layer of a film is traced in both 2T‐HD modeling and molecular dynamics (MD) simulation. For fluences above some threshold the nucleation of voids in frontal surface layer is initiated by strong tensile wave following the compression wave. If the absorbed fluence is ～30 % above the ablation threshold than void nucleation develops quickly to heavily foam the molten met al. Long‐term evolution of the metal foam including foam breaking and freezing is simulated. It is shown that surface nano‐structures observed in experiments are produced by very fast cooling of surface molten layer followed by recrystallization of supercooled liquid in disintegrating foam having complex geometry. Characteristic lengths of such surface nanostructures, including frozen pikes and bubbles, are of the order of thickness of molten layer formed right after laser irradiation. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Coulomb effects in spatially separated electron and hole layers in coupled quantum wells

We report on the (magneto-) optical study of many-body effects in spatially separated electron and hole layers in GaAs/Al_xGa_1?x As coupled quantum wells (CQWs) at low temperatures (T = 1.4 K) for a broad range of electron-hole (e-h) densities. Coulomb effects were found to result in an enhancement of the indirect (interwell) photoluminescence (PL) energy with increasing the e-h density both for a zero magnetic field and at high fields for all Landau level transitions; this is in contrast to the electron-hole systems in single QWs where the main features are explained by the band-gap renormalization resulting in a reduction of the PL energy. The observed enhancement of the ground state energy of the system of the spatially separated electron and hole layers with increasing the e-h density indicates that the real space condensation to droplets is energetically unfavorable. At high densities of separated electrons and holes, a new direct (intrawell) PL line has been observed: its relative intensity increased both in PL and in absorption (measured by indirect PL excitation) with increasing density; its energy separation from the direct exciton line fits well to the X ^? and X ⁺ binding energies previously measured in single QWs. The line is therefore attributed to direct multiparticle complexes.     

AC conductivity analysis and dielectric relaxation behavior of (C6H20N3)BiBr6.H2O

The N‐(3‐ammoniumpropyl)‐1,3 diammoniumpropane hexabromobismuthate (III) monohydrate exhibits a structural phase transition at T = 330 °K, which has been characterized by differential scanning calorimetric. The alternating current electrical conductivity and the dielectric relaxation properties of the (C₆H₂₀N₃)BiBr₆.H₂O compound have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 100 Hz–1 MHz and 290–355 °K, respectively. The Z′ and Z″ versus frequency plots are well fitted to an equivalent circuit consisting of series of combination of grains and grain boundary elements. The frequency dependent alternating current conductivity is well described by Jonscher's universal power law: σ(ω,T) = σ_DC(T) + A(T)ω^s(T). The nature of direct current conductivity variation suggests the Arrhenius type of electrical conductivity. Furthermore, the modulus plots can be characterized by full width at half height or in terms of a non‐experiential decay function φ(t) = exp(?t/τ)^β. The variation of the value of these elements with temperatures confirmed the result detected by differential scanning calorimetry measurements. Thus, the near values of activation energies obtained from the impedance and modulus spectra confirm that the transport is through an ion hopping mechanism. Copyright © 2015 John Wiley & Sons, Ltd.     

Electron Temperature Dependence of the Dissociative Recombination Coefficient of Molecular Argon Ions Ar+2 with Electrons

A dual mode (TM₀₁₀ cylindrical cavity/cylindrical waveguide) microwave apparatus is used to study the ion mobility and dissociative recombination of molecular argon ions with electrons in the afterglow period of a d.c. glow discharge as a function of electron temperature when electrons were heated by microwaves up to T_e ≤ 10300K, with T₊ = T_gas = 300K. The electron temperature dependence of the total rate coefficient of dissociative recombination may be represented by α (Ar⁺₂) = (8.1 ± 0.5) × 10^–7[300/T_e(inK)]^0.64cm³s^–1 which is in very good agreement with most previous experimental results but not with the recent theoretical calculations (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Analysis of temperature-dependent electrical resistivity of ZnO nano-structures

The temperature–dependent electrical resistivity ρ(T) in metallic and semiconducting phase of ZnO nanostructures is theoretically analysed. ρ(T) shows semiconducting phase in low temperature regime (140 K<T<180 K), shows an absolute minimum near 180 K and increases linearly with T at high temperatures (200 K<T<300 K). The resistivity in metallic phase is estimated within the framework of electron–phonon and electron–electron scattering mechanism. The contributions to the resistivity by inherent acoustic phonons (ρ_ac) as well as high frequency optical phonons (ρ_op) were estimated using Bloch–Gruneisen (BG) model of resistivity. The electron–electron contributions ρ_e?e=BT² in addition with electron–phonon scattering is also estimated for complete understanding of resistivity in metallic phase. Estimated contribution to resistivity by considering both phonons, i.e., ω_ac and ω_op and the zero limited resistivity are added with electron–electron interaction ρ_e–e to obtain the total resistivity. Resistivity in Semiconducting phase is discussed with small polaron conduction (SPC) model. The SPC model consistently retraces the low temperature resistivity behaviour (140 K<T<180 K). Finally the theoretically calculated resistivity is compared with experimental data which appears favourable with the present analysis in wide temperature range.     

Optical Emission Diagnostics of an U-Shaped Argon Stabilized d.c. Arc

The radial distribution of parameters has been measured by using the optical emission spectroscopy of an U-shaped argon stabilized low current arc at atmospheric pressure. All the measurements reported here were performed from a side-on observation direction by applying the Abel inversion routine. Radial distributions of apparent temperatures (T_exc., T_e, T_i, T_g) and of electron number density (n_e) for the plasma were measured, with and without presence of KCl (spectrochemical buffer). The measured data of n_e are compared to the theoretically calculated values of the equilibrium plasma composition. On the basis of the measured data, the validity of LTE concept is considered. It was found that deviation from LTE increases to the plasma periphery.