Investigations of the exciton condensate

Recent experiments on quantum Hall bilayers in the vicinity of total filling factor 1 (ν_T=1) have revealed many exciting observations characteristic of a superfluidic exciton condensate. We report on our experimental work involving the ν_T=1 exciton condensate in independently contacted bilayer two-dimensional electron systems. We observe previously reported phenomena as a zero-bias resonant tunneling peak, a quantized Hall drag resistivity, and in counter-flow configuration, the near vanishing of both ρ_xx and ρ_xy resistivity components. At balanced electron densities in the layers, we find for both drag and counter-flow current configurations, thermally activated transport with a monotonic increase of the activation energy for d/ℓ_B<1.65 with activation energies up to 0.4 K. In the imbalanced system the activation energies show a striking asymmetry around the balance point, implying that the gap to charge excitations is considerably different in the separate layers that form the bilayer condensate. This indicates that the measured activation energy is neither the binding energy of the excitons, nor their condensation energy.     

Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing

We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the longitudinal and Hall counterflow resistances tend to vanish in the quantum Hall state at total bilayer filling nu=1, demonstrating the pairing of oppositely charged carriers in opposite layers. The counterflow Hall resistance decreases much more strongly than the longitudinal resistances as the temperature is reduced.     

Observations of nascent superfluidity in a bilayer two-dimensional electron system at

Single-layer longitudinal and Hall resistances have been measured in a bilayer two-dimensional electron system at ν_T=1 with equal but oppositely directed currents flowing in the two layers. At small effective layer separation and low temperature, the bilayer system enters an interlayer coherent state expected to exhibit superfluid properties. We detect this nascent superfluidity through the vanishing of both resistances as the temperature is reduced. This corresponds to the counterflow conductivity rising rapidly as the temperature falls, reaching by . This supports the prediction that the ground state of this system is an excitonic superfluid.     

Frequency-dependent Hall effect in spintronic systems under zero magnetic field

It is shown that in an electronic system with finite Rashba coupling and in the absence of external magnetic field, the Hall resistivity (ρ_xy) is finite at both zero and finite frequencies. This Hall resistivity is determined by the reactive part (real part) of the inverse dielectric functions. This allows us to probe the real part of the dielectric function in a spintronic system by using a transport measurement.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

Spin-dependent resistivity and quantum Hall ferromagnetism in two-dimensional electrons confined to AlAs quantum wells

We observe a strong dependence of the amplitude and field position of longitudinal resistivity (ρ_xx) peaks in the spin-resolved integer quantum Hall regime on the spin orientation of the Landau level (LL) in which the Fermi energy resides. The amplitude of a given peak is maximal when the partially filled LL has the same spin as the lowest LL, and amplitude changes as large as an order of magnitude are observed as the sample is tilted in field. In addition, the field position of both the ρ_xx peaks and plateau–plateau transitions in the Hall resistance shift depending on the spin orientation of the LLs. The spin dependence of the resistivity points to a new explanation for resistivity spikes, associated with first-order quantum Hall ferromagnetic transitions, that occur at the edges of quantum Hall states.     

Bistability of quantum magnetotransport in a multilayer Ge/p-Ge1−x Six heterostructure with wide potential wells

Two metastable states of a multilayer Ge/p-Ge_1−x Si_x heterosystem with wide (∼ 35 nm) potential wells (Ge) are observed in strong magnetic fields B at low temperatures. In the first state, the Hall resistivity exhibits an inflection near the value ρ_xy=h/e ² scaled to one Ge layer. The longitudinal magnetoresistivity ρ_xx(B) possesses a minimum in the range of fields where this inflection occurs. The temperature evolution of the inflection in ρ_xy(B), the minimum of ρ _xx(B), and the value of ρ_xy at the inflection indicates a weakly expressed state of the quantum Hall effect with a uniform current distribution over the layers. In the second metastable state, an unusually wide plateau near h/2e ² with a very weak field dependence is observed in ρ_xy(B). Estimates show that in these samples the Fermi level lies below but close to the top of the inflection in the bottom of the well. For this reason, the second state can be explained by separation of a hole gas in the Ge layers into two sublayers, and the saturation of ρ_xy(B) near h/2e ² can be explained by the formation of a quantum Hall insulator state. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 4, 290–297 (25 August 1999)     

Electrical transport, magnetic and thermal properties of icosahedral Al–Pd–Mn quasicrystals

We report measurements of electrical resistivity (ρ), Hall coefficient (R_H), magnetization (M) and specific heat (C_p(T)) of high-quality icosahedral Al_70.4Pd_20.8Mn_8.8 phases with different thermal treatment. An improvement in the quasi-crystallinity upon the annealing treatment caused a drastic increase in ρ up to 7000 μΩ cm accompanied by a very small electronic specific heat coefficient γ. The low temperature ρ(T) data has been analyzed in terms of weak localization and electron–electron interaction effects. The Hall resistivity (ρ_H) is found to be strongly temperature-dependent and varies linearly with the magnetization (M) for the same field and temperature. Magnetization measurement reveals that more conductive samples are more magnetic and vice versa. Magnetic susceptibility (χ) data of all the annealed samples agrees with the Curie–Weiss-like behavior implying the existence of localized moments. The negative Curie–Weiss temperature (θ) indicates strong antiferromagnetic coupling between individual Mn atoms. The magnetic Mn concentration is found to be small, ranging from 1.73×10^-4 for the less magnetic sample studied up to 3×10^-3 for the more magnetic one. The small electronic specific heat coefficient obtained for all the samples suggests a significant reduction in the electronic density of states (DOS) at the Fermi level (E_F) upon thermal annealing treatment.     

Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures

The weak-field Hall voltage in Si-MOS structures with different mobility is studied on both sides of the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, the Hall voltage is found to deviate by 6–20 % from its classical value. The deviation does not correlate with the strong temperature dependence of the diagonal resistivity ρ _xx (T). In particular, the smallest deviation in R _xy is found in the highest-mobility sample, which exhibits the largest variation in the diagonal resistivity ρ _xx with temperature. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 1, 48–52 (10 July 1999) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Nuclear-spin-lattice relaxation in a bilayer quantum Hall system

We examined the electron spin degree of freedom around the total Landau-level filling factor ν=1 in a bilayer system via nuclear spins. In a balanced bilayer system, nuclear-spin-lattice relaxation rate 1/T₁, which probes low-energy electron spin fluctuations, increases gradually as the system is driven from the quantum Hall (QH) state through a phase transition to the compressible state. This result demonstrates that the electron spin degree of freedom is not frozen either in the QH or compressible states. Furthermore, as the density difference between the two layers is increased from balanced bilayer to monolayer configurations, 1/T₁ around ν=1 shows a rapid yet smooth increase. This suggests that pseudospin textures around the bilayer ν=1 system evolves continuously into the spin texture for the monolayer system.     

Thermopower evidence for Wigner crystallization in the insulating phase of two-dimensional GaAs bilayer hole systems

We report on low-temperature thermopower measurements of interacting GaAs bilayer hole systems in the limit of no interlayer tunneling. These systems exhibit a reentrant insulating phase near the many-body quantum Hall state (QHS) at total filling factor ν=1, when both layers have the same density. The diffusion thermopower is expected to diverge as T^-1 in the presence of an energy gap (Wigner crystal) or to vanish in the case of a disordered induced mobility gap. Our results show that, as the temperature is decreased, the diffusion thermopower exhibits a T^-1 dependence in the insulating phase around ν=1. This behavior clearly indicates the opening of an energy gap at low temperature, in agreement with the formation of a pinned Wigner solid. Finally, we report on the T-dependence of the thermopower at ν=1.     

Quantum Hall effect in the bulk semiconductors bismuth and antimony tellurides: Proof of the existence of a current-carrier reservoir

The quantization of the Hall resistivity ρ_xy in the form of plateaus in the dependence of ρ_xy on the magnetic field B is observed in the semiconductors Bi₂Te₃ and Sb₂Te₃; the minima of the transverse magnetoresistivity ρ_xx correspond to the start of the plateaus. The quantization of ρ_xy is due to the presence of a current-carrier reservoir. An impurity band with a high density of states or a different band with a much higher current-carrier effective mass serves as the reservoir. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 11, 754–758 (10 December 1999)     

Magnetotransport measurements on overgrown cleaved edge heterostructures in Hall bar geometry

We present new methods to pattern and characterize the overgrown cleaved egde (CE) of GaAs/AlGaAs heterostructures. Four point measurements, which allow a direct measurement of the magnetotransport coefficients ρ_xx and ρ_xy of a two-dimensional electron system on the CE, have been out of reach so far. By means of novel preparation techniques a contacted Hall bar structure can be created on the edge of the cleavage plane. The potential of the new method is first tested on a system which is density modulated in a direction parallel to the current flow due to an underlying GaAs/AlGaAs superlattice. To create a two-dimensional electric modulation we managed to pattern the active area of the Hall bar with periodically arranged lines in the direction perpendicular to the MBE-grown superlattice. The resulting unit cells are reflected in magnetoresistance oscillations associated with the most prominent one-dimensional Fermi contours along x- and y-direction.     

Temperature- and magnetic field dependence of the Hall effect in the heavy fermion system CeCu6

The temperature dependence of the Hall coefficient and the magnetic field dependence of the Hall resistivity of CeCu₆ have been determined in the temperature range 80 mK<T<10 K and in magnetic fields up to 10T. The Hall coefficientR _H shows a very strong temperature dependence with two extrema and a change of sign, and the Hall resistivity _xy has a strong field dependence with up to two changes of sign. The observed behavior can partially be explained by the field- and temperature dependence of the skew scattering contribution to the Hall coefficient.     

Topological invariant and the quantization of the Hall conductance

The topological aspects of wavefunctions for electrons in a two dimensional periodic potential with a magnetic field are discussed. Special attention is paid to the linear response formula for the Hall conductance σ_xy. It is shown that the quantized value of σ_xy is related to the number of zeros of wavefunctions in the magnetic Brillouin zone. A phase of wavefunctions cannot be determined in a unique and smooth way over the entire magnetic Brillouin zone unless the magnetic subband carries no Hall current.     

Anomalous quantum Hall effect induced by nearby quantum dots

Transport measurements in high magnetic fields have been performed on two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear feature of quantum Hall effect was observed in spite of presence of QDs nearby 2DES. However, both magnetoresistance, ρ_xx, and Hall resistance, ρ_xy, are suppressed significantly only in the magnetic field range of filling factor in 2DES ν<1 and voltage applied on a front gate . The results indicate that the electron state in QDs induces spin-flip process in 2DES.     

Spatial evolution of the generation and relaxation of excited carriers near the breakdown of the quantum Hall effect

We have measured the generation and relaxation of excited carriers along their drift direction near the breakdown of the quantum Hall effect (QHE). The dissipative resistivity ρ_xx(x) at current densities close to the critical value for the QHE breakdown was measured as a function of the distance x from the electron injection at x=0. By injecting “cold” electrons into constrictions at supercritical current levels, the evolution of the breakdown along the drift direction was monitored. After a smooth increase of the resistivity with the drifting distance, an avalanche-like rise towards a saturation value occurs. Drastic changes of the resistivity profiles with the applied current were found in a narrow range around the critical current. The observed behavior is attributed to impurity-assisted tunneling between Landau levels. By injecting hot electrons (excited in a periodic set of constrictions) into a region with subcritical current density, the relaxation process was analyzed. Inelastic relaxation lengths with typical values in the range from 0.3 to 4 μm were found, which agree within 10% with the elastic mean free path determined from the Hall mobility at zero magnetic field. We conclude that the energy relaxation process is triggered by scattering at impurity potentials.     

The Hall effect in amorphous (Zr0.64Ni0.36)1−x M x alloys (M=Al,Ga)

Values of the room temperature Hall coefficients and electrical resistivity of amorphous melt spun (Zr_0.64Ni_0.36)_1–x Al _x and (Zr_0.64Ni_0.36)_1–x Ga _x alloys forx=0–0.25 are reported. Addition of Al or Ga to Zr_0.64Ni_0.36 dramatically increases the already positive Hall coefficient of this alloy and also increases the electrical resistivity and crystallization temperature.     

Changes in electrical properties in α- and γ-exposed PADC track detector

The changes in the dielectric properties and temperature dependence of the d.c. conductivity of α-exposed poly allyl diglycol carbonate (PADC) have been studied. On α-irradiation the dielectric constant (′) as a function of frequency has been found to decrease significantly. The temperature dependence of resistivity in pristine and γ-irradiated samples is of the form ρ(T)=ρ_∝ exp(T₀/T) which can be attributed to conduction of thermally generated carriers. In case of (γ+α) irradiated samples the temperature dependence of resistivity is of the form ρ(T)=ρ_∝ exp(T₀/T)^1/2 which is due to one-dimensional hopping of carriers.     

Exchange interaction effects in the crossing of spin-polarized Landau levels in a silicon-germanium heterostructure: transition into a ferromagnetic state

The crossing of spin-split Landau levels in a Si/SiGe heterostructure is investigated by means of magneto-transport experiments in tilted magnetic fields. We observe a transition from a paramagnetic into a fully spin polarized state. During the transition strongly enhanced maxima in the transverse resistivity ρ_xx appear when the parallel field component is oriented along the Hall bar. We assign this effect to an energy level structure strongly modified by exchange interaction effects between different Landau levels. Surprisingly the maximum in ρ_xx totally disappears when the parallel field component is perpendicular to the Hall bar.