Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

The growth of highly oriented 3C–SiC directly on an oxide release layer, composed of a 20-nm-thick poly-Si seed layer and a 550-nm-thick thermally deposited oxide on a (1 1 1)Si substrate, was investigated as an alternative to using silicon-on-insulator (SOI) substrates for freestanding SiC films for MEMS applications. The resulting SiC film was characterized by X-ray diffraction (XRD) with the X-ray rocking curve of the (1 1 1) diffraction peak displaying a FWHM of 0.115° (414″), which was better than that for 3C–SiC films grown directly on (1 1 1)Si during the same deposition process. However, the XRD peak amplitude for the 3C–SiC film on the poly-Si seed layer was much less than for the (1 1 1)Si control substrate, due to slight in-plane misorientations in the film. Surprisingly, the film was solely composed of (1 1 1) 3C–SiC grains and possessed no 3C–SiC grains oriented along the 3 1 1 and 1 1 0 directions which were the original directions of the poly-Si seed layer. With this new process, MEMS structures such as cantilevers and membranes can be easily released leaving behind high-quality 3C–SiC structures.     

Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates

Growth on AlN/4H–SiC substrates of coalesced, non-polar GaN films having volumes of material with reduced densities of dislocations and stacking faults has been achieved from etched stripes via the statistical and experimental determination of the effect of temperature and V/III ratio on the lateral and vertical growth rates of the GaN{0 0 0 1} faces combined with pendeo-epitaxy. AFM of the uncoalesced GaN(0 0 0 1) and GaN vertical faces revealed growth steps with some steps terminating at dislocations on the former and a pitted surface without growth steps, indicative of decomposition, on the latter. Coalescence was achieved via (a) a two-step route and the parameters of (1) and V/III=1323 for 40 min and (2) 1020 °C and V/III=660 for 40 min and (b) a one-step route that employed and a V/III ratio=660 for 6 h. The densities of dislocations in the GaN grown vertically over and laterally from the stripes were 4×10¹⁰ cm⁻² and 2×10⁸ cm⁻², respectively; the densities of stacking fault in these volumes were 1×10⁶ cm⁻¹ and 2×10⁴ cm⁻¹, respectively. The defects in the wing material were observed primarily at the bottom of the film where lateral growth of the GaN occurred from the AlN and the SiC. Plan view AFM also revealed different microstructures and a reduction in the RMS roughness values from 1.2 to 0.95 nm in these respective regions.     

Microstructural characteristics and crystallographic evolutions of Ga-doped ZnO films grown on sapphire substrates at high temperatures by RF magnetron sputtering

The microstructural characteristics and crystallographic evolutions of Ga-doped ZnO (GZO) films grown at high temperatures were examined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The GZO films with various film thicknesses were grown on (0 0 0 1) Al₂O₃ substrates at 750 °C by RF magnetron sputtering using a 2 wt% Ga-doped ZnO single target. The (0 0 0 2) ZnO peaks in the XRD patterns shifted to a higher angle with increasing film thickness and an additional (1 0 1¯ 1) ZnO peak was observed in the final stage of film growth. HRTEM showed the epitaxial growth of GZO films in the initial growth stage and the formation of surface protrusions in the intermediate stage due to elastic relaxation. The surface protrusions consisted of {1 0 1¯ 1}, {1 0 1¯ 3}, and {0 0 0 2} planes. After the surface protrusions had formed, a GZO film with many c-axis tilted grains formed due to plastic relaxation, where the tilted grain boundaries had an angle of 62° to the substrate. The formation of the protrusions and c-axis tilted grains was closely related to the strain status of the film induced by Ga incorporation, high-temperature growth and a high film thickness.     

Growth of epitaxial ZnO films on Si (1 1 1) substrates with Cr compound buffer layer by plasma-assisted molecular beam epitaxy

Single crystalline ZnO film was grown on (1 1 1) Si substrate through employing an oxidized CrN buffer layer by plasma-assisted molecular beam epitaxy. Single crystalline characteristics were confirmed from in-situ reflection high energy electron diffraction, X-ray pole figure measurement, and transmission electron diffraction pattern, consistently. Epitaxial relationship between ZnO film and Si substrate is determined to be (0 0 0 1)_ZnO‖(1 1 1)_Si and [1 1 2¯ 0]_ZnO‖[0 1 1]_Si. Full-width at half-maximums (FWHMs) of (0 0 0 2) and (1 0 1¯ 1) X-ray rocking curves (XRCs) were 1.379° and 3.634°, respectively, which were significantly smaller than the FWHMs (4.532° and 32.8°, respectively) of the ZnO film grown directly on Si (1 1 1) substrate without any buffer. Total dislocation density in the top region of film was estimated to be ∼5×10⁹ cm⁻². Most of dislocations have a screw type component, which is different from the general cases of ZnO films with the major threading dislocations with an edge component.     

Synchrotron X-ray diffraction studies of heteroepitaxial ZnO films grown by pulsed laser deposition

Heteroepitaxial ZnO films were grown by pulsed laser deposition on various substrates such as GaN-buffered C-Al₂O₃, C-Al₂O₃, A-Al₂O₃, and R-Al₂O₃. The epitaxy nature of the films was investigated mainly by synchrotron X-ray diffraction. The results showed that the GaN interlayer plays a positive role in growing an unstrained, well-aligned epitaxial ZnO film on the basal plane of Al₂O₃. Importantly, the ZnO film grown on R-Al₂O₃ has two differently aligned domains. The dominant (1 1 0) oriented domain has much better alignment in the in-plane direction than the minor portion of (0 0 1) oriented domain, while in the out-of-plane direction the two domains have almost the same mosaic distribution.     

Microstructural changes in epitaxial YBa2Cu3O7−δ thin films due to creation of O vacancies

Structural and transport properties of YBa₂Cu₃O_7−δ thin films subjected to different heat treatments and, consequently, having different O vacancy contents are investigated. It is observed that lattice parameters of the films follow the trend of the bulk material, indicating that either the additional stresses created in c-axis oriented films by O vacancies are negligibly small or they are relaxed at elevated temperatures. In addition, heat treatment under relatively low O₂ partial pressures, used to create O vacancies, leads to considerable reduction in local variations of lattice spacings in YBa₂Cu₃O_7−δ thin films.     

Growth, thermal and spectral properties of Nd-doped NaGd(MoO4)2 crystal

Nd³⁺-doped NaGd(MoO₄)₂ crystal with dimensions were grown by Czochralski method. Nd³⁺:NaGd(MoO₄)₂ crystal melts at 1182 °C. The hardness of Nd³⁺:NaGd(MoO₄)₂ crystal is 334 VDH. The specific heat is 72.6 cal/mol K. The thermal expansion coefficients are for c-axis and for a-axis, respectively. The absorption cross-sections of Nd³⁺:NaGd(MoO₄)₂ crystal are with a FWHM of 9 nm at the 804 nm for π-polarization and with a FWHM of 17 nm at 807 nm for σ-polarization, respectively. The emission cross-section σ_em are at 1063 nm for π-polarization and 1.94×10^-20 at 1070 nm cm² for σ-polarization, respectively. The fluorescence lifetime τ_f is 93.9 μs at room temperature.     

Controllable growth of ZnO nanowires with different aspect ratios and microstructures and their photoluminescence and photosensitive properties

ZnO nanowires with variable aspect ratios and microstructures have been prepared by a hydrothermal reaction of Zn foil and Na₂C₂O₄ solution at 140 °C. The ZnO nanowires are single crystalline with the wurtzite structure and grow in the [0 0 0 1] direction, and their aspect ratios and microstructures can be changed by tuning the reaction time and the Na₂C₂O₄ concentration. UV and blue-green emissions that depended on the Na₂C₂O₄ concentration are observed from the ZnO nanowires with different aspect ratios. The photosensitivity of ZnO ultralong nanowires with honeycomb-like micropatterns is found to be about 10 at 5 V.     

Effect of substrate temperature on the room-temperature ferromagnetism of Cu-doped ZnO films

Wurtzite structure ZnO films doped with ~2 at% Cu were deposited at substrate temperatures (T_s) from 350 to 600 °C by helicon magnetron sputtering. All the films exhibited room-temperature (RT) ferromagnetism (FM) and the maximum saturation magnetization (M_s) was 1.2 emu/cm³ (~0.15 μ_B/Cu). Cu ions were mainly in a divalent state as identified by X-ray photoelectron spectroscopy. FM tended to increase with decreasing T_s, and vacuum annealing enhanced the M_s. These results suggested that oxygen vacancies and/or zinc interstitials might contribute to the ferromagnetic performance. Thus, the observed FM was explained in terms of the defect related mechanism.     

Crystallization of sputtered amorphous silicon induced by silver–copper alloy with high crystalline volumeratio

Silver–copper alloy-induced crystallization of sputtered a-Si has been studied. In this alloy, Cu acts as a catalyst to accelerate the crystallization, while Ag acts as a new kind of buffer layer, different from Al₂O₃ and Si₃N₄, to obtain well-crystallized poly-Si films with short annealing time and free of post-treatment for ohmic contact. When the Cu content is limited to below 30%, Ag can effectively slow down the diffusion of Cu into Si and decrease the Cu–silicide nuclei density to improve the crystalline volume ratio from 80% to over 90%. A 1:4 ratio of Cu to Ag yields the best result. The crystalline volume ratio and Hall mobility reach nearly 100% and 29.4 cm²/V s, respectively. This high quality poly-Si film demonstrates a promising application in solarcells.     

MOCVD growth of GaN on Si(1 1 1) substrates using an ALD-grown Al2O3 interlayer

GaN thin films have been grown on Si(1 1 1) substrates using an atomic layer deposition (ALD)-grown Al₂O₃ interlayer. This thin Al₂O₃ layer reduces strain in the subsequent GaN layer, leading to lower defect densities and improved material quality compared to GaN thin films grown by the same process on bare Si. XRD ω-scans showed a full width at half maximum (FWHM) of 549 arcsec for GaN grown on bare Si and a FWHM as low as 378 arcsec for GaN grown on Si using the ALD-grown Al₂O₃ interlayer. Raman spectroscopy was used to study the strain in these films in more detail, with the shift of the E₂(high) mode showing a clear dependence of strain on Al₂O₃ interlayer thickness. This dependence of strain on Al₂O₃ thickness was also observed via the redshift of the near bandedge emission in room temperature photoluminescence (RT-PL) spectroscopy. The reduction in strain results in a significant reduction in both crack density and screw dislocation density compared to similar films grown on bare Si. Screw dislocation density of the films grown on Al₂O₃/Si substrates approaches that of typical GaN layers on sapphire. This work shows great promise for the use of oxide interlayers for growth of GaN-based LEDs on Si.     

Influence of oxygen/argon ratio on structural,electrical and optical properties of Ag-doped ZnO thin films

Ag-doped ZnO (ZnO:Ag) thin films were deposited on quartz substrates by radio frequency magnetron sputtering technique. The influence of oxygen/argon ratio on structural, electrical and optical properties of ZnO:Ag films has been investigated. ZnO:Ag films gradually transform from n-type into p-type conductivity with increasing oxygen/argon ratio. X-ray photoelectron spectroscopy measurement indicates that Ag substitutes Zn site (Ag_Zn) in the ZnO:Ag films, acting as acceptor, and being responsible for the formation of p-type conductivity. The presence of p-type ZnO:Ag under O-rich condition is attributed to the depression of the donor defects and low formation energy of Ag_Zn acceptor. The I–V curve of the p-ZnO:Ag/n-ZnO homojunction shows a rectification characteristic with a turn-on voltage of ∼7 V.     

Suppression of phase separation in InGaN layers grown on lattice-matched ZnO substrates

Sapphire and SiC are typical substrates used for GaN growth. However, they are non-native substrates and result in highly defective materials. The use of ZnO substrates can result in perfect lattice-matched conditions for 22% indium InGaN layers, which have been found to suppress phase separation compared to the same growths on sapphire. InGaN layers were grown on standard (0 0 0 2) GaN template/sapphire and (0 0 0 1) ZnO substrates by metalorganic chemical vapor deposition. These two substrates exhibited two distinct states of strain relaxation, which have direct effects on phase separation. InGaN with 32% indium exhibited phase separation when grown on sapphire. Sapphire samples were compared with corresponding growths on ZnO, which showed no evidence of phase separation with indium content as high as 43%. Additional studies in Si-doping of InGaN films also strongly induced phase separation in the films on sapphire compared with those on ZnO. High-resolution transmission electron microscopy results showed perfectly matched crystals at the GaN buffer/ZnO interface. This implied that InGaN with high indium content may stay completely strained on a thin GaN buffer. This method of lattice matching InGaN on ZnO offers a new approach to grow efficient emitters.     

Shape evolution of zinc oxide from twinned disks to single spindles through solvothermal synthesis in binary solvents

Shape evolution of ZnO crystals from twinned disks to single spindles was studied through solvothermal synthesis in binary solvents N,N-diethylformamide (DEF) and methanol (MeOH). The MeOH content in DEF had large influence on the morphology of the obtained ZnO crystals. In MeOH-free DEF, well-shaped ZnO twinned disks with perfect mirror symmetry could be formed through the assembly of ZnO₄⁶⁻–julolidinium–ZnO₄⁶⁻ growth units on the (0 0 0 1) growth interfaces. For small amounts of MeOH (MeOH/DEF=0.04), elongated twinned disks were formed since the growth along the polar c-axis was enhanced. With increasing MeOH content (MeOH/DEF=0.1), twinned rods with reduced mirror symmetry were formed. When a large amount of MeOH was added to DEF (MeOH/DEF=0.5), single spindles rather than twinned disks or twinned rods were obtained. A similar shape evolution of zinc oxide was observed in binary solvents DEF and N,N-dimethylformamide (DMF), suggesting that the growth of ZnO crystals with tuneable shape and size can be controlled by the composition of the binary solvent mixture.     

Local structural,magnetic, and optical properties of Zn1−xFexO thin films

High quality Zn_1−xFe_xO thin films were deposited on α-sapphire$\alpha \text{-sapphire}$ substrates by RF magnetron sputtering. X-ray absorption fine structure measurements showed that the chemical valence of Fe ions in the films was a mixture of 2+ and 3+ states, and Fe ions substituted mainly for the Zn sites in the films. DC-magnetization measurements revealed ferromagnetic properties from 5 to 300 K. The photoluminescence measurements at 15 K showed a sharp main transition peak at 3.35 eV along with a broad impurity peak at 2.45 eV. The structural and magnetization analyses of the Zn_1−xFe_xO films strongly suggested that the ferromagnetism was the intrinsic properties of the films.     

Surface morphology of as-deposited and illuminated As–Se chalcogenide thin films

The role of the composition and of the related changes of the structure in the formation of the surface of amorphous As_xSe_1−x (0 < x < 0.5) layers before and after light treatment was investigated by direct measurements of the surface roughness at nanometer-scale and surface deformations at micrometer-scale under influence of illumination. It was established that the surface roughness of the films, deposited by vacuum thermal evaporation, decreased with increasing As content, especially in compositions 0.1  x  0.3, where the maximum light stimulated surface deformations (localized expansion) occurs. Both relate to the rigidity percolation range and the maximum photoplastic effects, which are not directly connected to the known photodarkening effect, since it is minimal for these compositions.     

SIMS and Raman characterizations of ZnO:N thin films grown by MOCVD

Nitrogen was incorporated into ZnO films grown by metalorganic chemical vapour deposition (MOCVD) on ZnO substrates using DMZn-TEN, tert-butanol and diallylamine, respectively, as zinc, oxygen and doping sources. The carrier gas was either hydrogen or nitrogen and the partial pressure ratio (R_VI/II) was varied in order to favor the nitrogen incorporation and/or reduce carbon related defects. The ZnO films have been characterized by Micro-Raman scattering and SIMS measurements. SIMS measurements confirm the nitrogen incorporation with concentrations extending from ∼10¹⁹ cm⁻³ to ∼4×10²⁰ cm⁻³. Raman spectra show nitrogen local vibration modes in films grown at low R_VI/II ratio and using H₂ as carrier gas. However, a vibration band attributed to carbon clusters dominates the Raman spectra for films grown with N₂ carrier. The contribution of N complexes was discussed. The strain was calculated for the as-grown and annealed films and it changes from tensile to compressive after annealing.     

Phase stability and oxygen doping in the Cu-N-O system

A growth stability diagram for the CuNO system has been determined in the temperature range 250-500 °C for a thermally activated CVD process, based on copper (II) hexafluoroacetylacetonate (Cu(hfac)₂), NH₃ and H₂O. Without any addition of water only Cu₃N was obtained. Addition of water introduces oxygen into the Cu₃N structure to a maximum amount of 9 at% at a water/nitrogen molar ratio of 0.36 at 325 °C. Above this molar ratio Cu₂O starts to deposit, in addition to an oxygen doped Cu₃N phase. Only Cu₂O is deposited at large excess of water.     

The effect of aluminum sources on synthesis of low expansion glass–ceramics in lithia–alumina–silica system by sol–gel route

This paper investigated the effect of different aluminum sources on the crystallization behaviors, thermal expansion and morphology of lithium aluminosilicate glass–ceramics sintered at different temperatures. Specimens were prepared by sol–gel technology. The crystalline phase in the specimen with Al(NO₃)₃9H₂O aluminum source sintered at 1300 °C has shown a major phase of Li₂Al₂Si₃O₁₀ accompanied by minor phase of LiAl₅O₈ and trace amount of SiO₂. The β-eucryptite appeared as the only phase in the specimens with aluminum isopropoxide or aluminum isopropoxide mixed with Al(NO₃)₃9H₂O aluminum sources sintered at 1300 °C. The sintering temperature has significant effect on the thermal expansion behavior of all the specimens. SEM indicated that microstructures were spherulitic crystals and no distinct differences were observed in the specimens with different aluminum sources.