Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD

We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550 oC and the reaction pressure of 4 kPa by hot filament chemical vapor deposition method, in which CH₄ and H₂ act as a source and diluting gases, respectively. N₂, H₂, and NH₃ were used as the etching gases, respectively. Results show that the optimum conditions can be obtained only for the case of H₂ gas. The crystal morphology and crystallinity of the samples have been examined by scanning electron microscopy and X-ray diffraction, respectively.     

红外吸收法测定炼钢碳化硅类脱氧剂中的碳化硅

为了满足炼钢碳化硅类脱氧剂中碳化硅的分析,在参照国家标准方法的基础上,通过烧失率、助熔剂选择、线性化考核及精密度和准确度等条件试验,建立了红外吸收法测定炼钢碳化硅类脱氧剂中的碳化硅的分析方法。方法的回收率大于98%,相对标准偏差为0.5%～0.7%,准确度高,误差小,实用性强。     

Limiting Size of Monolayer Graphene Flakes Grown on Silicon Carbide or via Chemical Vapor Deposition on Different Substrates

Russian Journal of Physical Chemistry A - The maximum size of homogeneous monolayer graphene flakes that form during the high-temperature evaporation of silicon from a surface of SiC or during...     

Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)

Russian Journal of General Chemistry - A review of advances in the growth of SiC epitaxial films on silicon is presented. All the main classical methods used at present to grow SiC films on silicon...     

Field Emission Properties of Multi-walled Carbon Nanotubes Grown on Silicon Nanoporous Pillar Array

"Multi-walled carbon nanotubes (CNTs) were grown on a silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition. Surface morphologies and microstructure of the resultant were studied by a field emission scanning electron microscope, Raman spectrum, transmission electron microscope, and highresolution transmission electron microscopy. The composition of samples was determined by energy dispersive X-ray spectroscopy (EDS). The results showed that a great deal of CNTs, with diameter in the range of 20-70 nm, incorporated with Si-NPA and a large scale nest array of CNTs/Si-NPA (NACNT/Si-NPA) was formed. EDS analysis showed that the composition of carbon nanotubes was carbon. Field emission measurements showed that a current density of 5 mA/cm2 was obtained at an electric field of 4.26 V/1m, with a turn-on field of 1.3 V/1m. The enhancement factor calculated according to the Fowler-Nordheim theory was ?11,000. This excellent field emission performance is attributed to the unique structure and morphology of NACNT/Si-NPA, especially the formation of a nest-shaped carbon nanotube array. A schematic drawing that illustrates the experimental configuration is given. These results indicate that NACNT/Si-NPA might be an ideal candidate cathode for potential applications in flat panel displays."     

硅桥调控的聚茂钒体系电子结构和输运性质

利用密度泛函理论和非平衡格林函数的方法对硅桥调控后的聚茂钒体系（[V（Cp）₂（SiH₂）_n]_m（n=1（a）,n=2（b）,n=3（c）;m=∞;Cp=环戊二烯基））的电子结构和输运性质进行了研究。研究结果表明：随着硅桥的增长,V-V的铁磁性耦合变弱而反铁磁性耦合增强。a和b证实为铁磁性基态,而c更倾向为反铁磁性基态。a和b的铁磁性基态中的每个钒原子的磁距为3.0μ_B,超过钒-苯络合物或者纯聚茂钒体系的3倍。a-c的输运性质同它们的电子结构相一致,导电性变化规律为c > b > a。对于a和b,自旋向下状态的导电性略强于自旋向上状态。a和c都发生了明显的负微分电阻效应而b却没有,这主要是由于两个二茂钒的排列取向不同：a和c（SiH₂为奇数）中二茂钒呈V-型取向排列,进而导致了类似于离子键的量子点耦合,而b（SiH₂是偶数）中二茂钒是平行-型取向排列,从而导致了类似于共价键的量子点耦合。此外,由于散射区和两个电极之间的不对称耦合,a-c的导电性对电压施加方向较敏感。     

Structures and Properties of Silicon Oxide Clusters by Theoretical Investigations

In this paper, we outline our computational work in the area of silicon oxide clusters. To reduce the computational cost, we designed an economic basis set for silicon oxide systems, and reliable structures were obtained by this approach. To reveal the formation mechanism of silicon nanowires, we investigated the structures and properties of silicon suboxide clusters in particular monoxide clusters that play an important role in the oxide-assisted growth. And to improve our understanding of the silicon dioxide clusters and to bridge the gap between gas phase and solid phase silica, we proposed several models based on the two-membered ring (2MR), three-membered ring (3MR), four-membered ring (4MR), the hybrid of the 2MR and 3MR, or the 3MR and 4MR.     

Ti基纳米TiO_2-CNT-Pt复合电极制备、表征及电化学性能

以电合成前驱体Ti(OEt)4直接水解法和电化学扫描电沉积法制备Ti基纳米TiO2-CNT-Pt(Ti/nanoTiO2-CNT-Pt)复合电极.透射电镜(TEM)和X射线衍射(XRD)测试表明,锐钛矿型纳米TiO2粒子(粒径5～10nm)和碳纳米管(CNT)结合形成网状结构,Pt纳米粒子(平均粒径9nm)均匀地分散在纳米TiO2-CNT复合膜表面.循环伏安及计时电流测试表明,Ti/nanoTiO2-CNT-Pt复合电极具有高活性表面,对甲醇的电化学氧化具有高催化活性和稳定性,Pt载量为0.32mg/cm2时,常温常压下甲醇氧化峰电流达到480mA/cm2.     

水热法制备纳米ZnS的光催化性能研究

采用水热法制备了结晶良好的ZnS纳米粒子,通过XRD、FT-IR、TEM、UV-Vis DRS等手段对所合成的ZnS粉体的结构、粒度和理化性能进行表征,并以亚甲基蓝为目标降解物,评价了ZnS粉体在紫外光和可见光下的光催化性能。研究结果表明,水热法制备的纳米ZnS为典型的六方晶系,粒径大致为10～20 nm,不论是在紫外光或可见光下对亚甲基蓝均具有优异的脱色率,呈现出良好的光催化性能。     

Effect of Cadmium Substitution on Structural and Magnetic Properties of Nano Sized Nickel Ferrite

The structure and crystal phase of the nanocrystalline powders of Ni_1-xCd_xFe₂O₄ (0≤x≤0.5) mixed ferrite, synthesized by wet chemical co-precipitation method, were characterized by X-ray diffraction. Results showed that the lattice parameter increased with increasing Cd concentration. Microstructure was studied by scanning electron microscopy. TG/DTA stud-ies were carried out on co-precipitated sulphate complexes. These studies revealed the low ferritization temperature (650 oC) of the ferrite system synthesized by presently adopted route of synthesis and occurrence of simultaneous decomposition and ferritization processes.Further studies by infrared spectroscopy were also conducted. Moreover, magnetic properties of the prepared nanoparticles were studied by magnetization and a.c. susceptibility mea-surements. The response of prepared Ni_1-xCd_xFe₂O₄ mixed ferrites to magnetic field was investigated. Results show that, magnetic susceptibility, Curie temperature, and effective magnetic moment decreased as the Cd content increases.     

Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

ＩｎｔｒｏｄｕｃｔｉｏｎＳｉｎｇｌｅ ｗａｌｌｅｄｃａｒｂｏｎｎａｎｏｔｕｂｅｓ(ＳＷＮＴｓ)ｈａｖｅｂｅｅｎｓｙｎｔｈｅｓｉｓｅｄｂｙｕｓｉｎｇｖａｒｉｏｕｓｍｅｔｈｏｄｓ[1— 3] ａｎｄｔｈｅｃｈｅｍｉｃａｌｖａｐｏｕｒｄｅｐｏｓｉｔｉｏｎ (ＣＶＤ )ｍｅｔｈｏｄｈａｓｂｅｅｎｃｏｎｓｉｄｅｒｅｄａｓａ ｐｒｏｍｉｓｉｎｇｍｅｔｈｏｄｔｏ ｐｒｏｄｕｃｅＳＷＮＴｓｏｎａｎｉｎｄｕｓｔｒｉａｌｓｃａｌｅ[3— 5] .Ｈｏｗｅｖｅｒ ,ａｌｌｔｈｅＳＷＮＴ ｐｒｏｄｕｃｔｓｓｙｎｔｈｅｓｉｓｅｄｔｏｄａｔｅｃｏ…     

TiO2-SA纳米光催化材料接枝动力学、结构及性能

采用后处理表面改性法在纳米TiO₂表面接枝水杨酸(SA)(TiO₂-SA), 分别考察了超声搅拌、溶剂、物料比、pH值及温度等因素对接枝过程及光催化材料性能的影响, 并研究了接枝反应动力学. 通过傅里叶变换红外(FT-IR)光谱、X射线光电子能谱(XPS)、X射线衍射(XRD)等对TiO₂-SA纳米光催化材料进行了结构表征, 并提出了结构模型. 通过接触角测定、同步热分析(热重-差示扫描量热法(TG-DSC))、紫外-可见漫反射光谱(UV-VisDRS)、扫描电子显微镜(SEM)对光催化材料进行了性能表征. 结果表明, 水杨酸改性纳米TiO₂可以提高疏水性及分散性, 减缓在溶剂中的沉降速度, 并能稳定吸附在油-水界面, 实现了光谱响应范围向可见光的拓展. 在紫外光照射下, TiO₂-SA表现出优异的光催化降解硝基苯性能.     

硅(111)衬底上直接接枝巯基的方法

硅衬底是很有应用前景的表面。这是因为硅衬底在机械上和化学上的适应性能够抵御水环境和有机环境带来的影响。除此之外,优良的电学性质也是它们成为具有应用前景的表面的原因。目前有许多方法来进行硅表面的巯基化,很多情况下是将具有―SH末端的分子接枝到硅衬底上。但这些方法存在反应时间长的问题。在这篇报导中,我们发展了一种新的硅表面巯基化方法。这种方法可以实现将巯基直接接枝到硅片表面。新方法需要对硅衬底进行氯化和巯基化反应,所需的反应时间缩短。X射线光电子能谱（XPS）和接触角测量被用于研究反应中每个步骤的表面表征。     

Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

IntroductionZnOis one of the most promising materials for pro-ducing ultraviolet laser at room temperature because ofits wide direct band gap(Eg=3.37eV)and large ex-citonic binding energy of60meV.Recently,much at-tention has been paid to short-wavelength …     

绿色化制备纳米木薯渣的微结构与性能

以NaOH、NaClO和H_2O_2为助剂,采用均质、球磨和超声3种机械力相结合的绿色方法对木薯渣(CDs)进行纳米化处理,得到纳米化的木薯渣(NCDs)。利用FT-IR、SEM、AFM、TG、DSC和粒径测试等手段对NCDs进行表征,研究不同助剂及不同工艺对CDs纳米化效果的影响。结果表明:加入15%质量分数的H_2O_2作为助剂,在均质、球磨和超声3种工艺手段共同处理的条件下,CDs纳米化效果最佳,NCDs最小粒径达到30nm,与CDs相比,其稳定性不仅得到提高,而且在悬浮液中的沉降速率变慢。