Magnetic resonance in multilayer Gd/Si/Co magnetic films

The magnetic properties of multilayer Gd/Si/Co magnetic films are experimentally studied by electron magnetic resonance and analyzed theoretically. The introduction of a semiconductor silicon interlayer is found to substantially affect the magnetic interlayer coupling and the magnetic dynamics of the system. The interlayer coupling is shown to be ferromagnetic for the (Gd/Si)_n films and to be antiferromagnetic for the (Gd/Si/Co/Si)_n films. The temperature dependences of the exchange parameters and the gyromagnetic ratios are determined. Possible mechanisms responsible for the formation of the interlayer coupling are discussed.     

Magnetic tuning of biquadratic exchange coupling in magnetic thin films

The effective interlayer coupling between antiferromagnetically coupled hard and soft ferromagnetic thin films is investigated as a function of the magnetic bit length in the hard layer, which is controlled using a magnetic recording system. The interlayer coupling is explored by studying the magnetization reversal of the soft layer. As the bit length decreases, the coupling evolves from antiferromagnetic to biquadratic to uncoupled. These results are reproduced using a micromagnetic model and determine the applicability range of Slonczewski's fluctuation model of biquadratic coupling.     

Interlayer exchange coupling in ferromagnet-semiconductor digital magnetic alloys

The interlayer exchange coupling in ferromagnet-semiconductor digital magnetic alloys in which monolyers (submonolayers) of transition metals are embedded into a semiconductor matrix is studied theoretically. A mechanism of an indirect exchange between ferromagnetic δ layers is proposed; it is based on the confinement of carriers in two-dimensional spin-polarized states inside the energy gap of the semiconductor. These appear due to strong potential and exchange carrier scattering by the δ layers. The interlayer exchange coupling is shown to occur through a nondegenerate semiconductor interlayer because of virtual electron excitations through an energy barrier separating these partly filled two-dimensional spin-polarized states and the edge of the bulk semiconductor band. The interlayer coupling intensity decreases exponentially with increasing distance between neighboring δ layers, and the type of this coupling can change from ferromagnetic into antiferromagnetic or vice versa as the interlayer thickness or the degree of filling the two-dimensional states increases.     

Magnetic resonance studies of three-layer FeNi/Bi/FeNi films

The interlayer coupling in three-layer FeNi/Bi/FeNi films is studied by electron magnetic resonance. The magnetic anisotropy at the permalloy–bismuth interface is shown to play a significant role in the formation of the magnetic state of the film structure. The interlayer coupling oscillation period is found to be about 8 nm. The interlayer coupling and the interface anisotropy and their temperature dependences are determined.     

EXCHANGE COUPLING BETWEEN TWO MAGNETIZED LAYERS IN A METAL

The exchange coupling energy for two magnetized monolayers embedded symmetrically in a metal and polarized in an arbitrary direction has been investigated in contact interaction approximation. Since the model can be solved exactly in particular for free-electron case, the coupling energy contributed from both extended state electrons and bound state electrons is calculated rigorously. For weak interaction, it is found that the leading term in the power-series expansion of density of states can give a correct coupling energy compared with rigorous one while extended state electrons give a much larger coupling energy. Furthermore, the relevant problems such as phase shift, 90°coupling and lattice effects have been discussed; an asymptotic expression of the interlayer coupling has been derived in a different way and used to calculate the exchange energy between magnetic layers in copper with Fermi surface obtained from de Haas-van Alphen effect.     

Interlayer exchange coupling in iron/silicon nanostructures

A superexchange mechanism is considered for the interlayer exchange coupling in Fe/Si nanostructures. It is assumed that the most important role in this mechanism is played by iron-silicon interfaces, in whose immediate vicinity the contact-induced ferromagnetic phase of body-centered iron monosilicide forms and spin-polarized interface states arise. The magnetic coupling between iron layers is accomplished by means of the interaction of interface states through the normal-semiconductor spacer layer and involves both intraband and interband processes. The nonmonotonic character of the dependence of the interband exchange coupling on the spacer thickness and composition (the occurrence of a maximu, the change in shape, the possible sign reversal of the bilinear component) is caused by competition between the ferro-and antiferromagnetic super-exchange components and by the complex character of the spacer electronic spectrum (in particular, by the occurrence of several equivalent extrema in the semiconductor bands). This model qualitatively reproduces the main features of the mechanism of interlayer exchange coupling in real Fe/Si nanostructures.     

Multilayer structures of the iron/chromium type with almost ideal interfaces in an external magnetic field

The magnetic phase diagram of the Fe/Cr/Fe three-layer structure with almost ideal interlayer boundaries was constructed. The effective interlayer interaction in this structure was described by the “half-angle coupling” model. Various system configurations were analyzed taking into account crystalline anisotropy, and the ground state of the system was determined. The behavior of the structure in an external magnetic field applied along easy and hard magnetic axes was studied. The magnetization curves M(H) characteristic of structures with various interface roughness parameter and interlayer exchange values were described and analyzed. The experimental situation is discussed.     

Electronic and magnetic properties of semihydrogenated,fully hydrogenated monolayer and bilayer MoN_2 sheets

Based on density functional theory, we investigate the electronic and magnetic properties of semi-hydrogenated, fully hydrogenated monolayer and bilayer MoN_2. We find that the AB stacking bilayer MoN_2 exhibits ferromagnetic coupling of intralayer and antiferromagnetic coupling of interlayer, however, the ground states of the semi-hydrogenated, fully hydrogenated monolayer and AA stcaking bilayer MoN_2 are nonmagnetic. The fully hydrogenated system has a quasidirect band-gap of 2.5 eV, which has potential applications in light-emitting diode and photovoltaics. The AB stacking bilayer MoN_2 shows the Dirac cone at K point in BZ around Fermi energy. Furthermore, the interlayer of the AB stacking bilayer MoN_2 is subjected to a weak van der Waals force, while the interlayer of the AA stacking forms N-N covalent bond.     

Edge magnetization in Bernal-stacked trilayer zigzag graphene nanoribbons

We have used a tight-binding Hamiltonian of an ABA-stacked trilayer zigzag graphene nanoribbon with β-alignment edges to study the edge magnetizations. Our model includes the effect of the intralayer next-nearest-neighbor hopping, the interlayer hopping responsible for the trigonal warping and the interaction between electrons, which is considered by a single band Hubbard model in the mean field approximation. Firstly, in the neutral system we analyzed the two magnetic states in which both edge magnetizations reach their maximum value; the first one is characterized by an intralayer ferromagnetic coupling between the magnetizations at opposite edges, whereas in the second state that coupling is antiferromagnetic. The band structure, the location of the edge-state bands and the local density of states resolved in spin are calculated in order to understand the origins of the edge magnetizations. We have also introduced an electron doping so that the number of electrons in the ribbon unit cell is higher than in neutral case. As a consequence, we have obtained magnetization steps and charge accumulation at the edges of the sample, which are caused by the edge-state flat bands.     

Interlayer exchange coupling,crystalline and magnetic structure in Fe/CsCl–FeSi multilayers grown by molecular beam epitaxy

Crystalline and magnetic structure as well as the interlayer exchange coupling in MBE grown Fe/FeSi multilayers are investigated. From conversion electron Mössbauer spectroscopy and ion beam channeling measurements the spacer FeSi material is found to be stabilized in a crystalline metastable metallic FeSi phase with the CsCl structure. Strong non-oscillatory interlayer exchange coupling is identified with magnetometry and synchrotron Mössbauer reflectometry. From the fits of the time spectrum and the resonant ?—? scans a model for the sublayer magnetization of the multilayer is deduced.

     

Domain size and structure in exchange coupled [Co/Pt]/NiO/[Co/Pt] multilayers

We investigate the competing effects of interlayer exchange coupling and magnetostatic coupling in the magnetic heterostructure ([Co/Pt]/NiO/[Co/Pt]) with perpendicular magnetic anisotropy (PMA). This particular heterostructure is unique among coupled materials with PMA in directly exhibiting both ferromagnetic and antiferromagnetic coupling, oscillating between the two as a function of spacer layer thickness. By systematically tuning the coupling interactions via a wedge-shaped NiO spacer layer, we explore the energetics that dictate magnetic domain formation using high resolution magnetic force microscopy coupled with the magneto-optical Kerr effect. This technique probes the microscopic and macroscopic magnetic behavior as a continuous function of thickness and the interlayer exchange coupling, including the regions where interlayer coupling goes through zero. We see significant changes in domain structure based on the sign of coupling, and also show that magnetic domain size is directly related to the magnitude of the interlayer exchange coupling energy, which generally dominates over the magnetostatic interactions. When magnetostatic interactions become comparable to the interlayer exchange coupling, a delicate interplay between the differing energy contributions is apparent and energy scales are extracted. The results are of intense interest to the magnetic recording industry and also illustrate a relatively new avenue of undiscovered physics, primarily dealing with the delicate balance of energies in the formation of magnetic domains for coupled systems with PMA, defining limits on domain size as well as the interplay between roughness, domains and magnetic coupling.     

The influence of interlayer exchange coupling on magnetic ordering in Fe/V superlattices

The relation between the interlayer exchange coupling and magnetic order is addressed, using Fe/V(0 0 1) superlattices as a model system. Large decrease in the ordering temperature (T_c) is observed with decreasing interlayer exchange coupling. The effective exponents of the magnetization were determined to be larger than 0.5 for all the samples, which is strongly deviating from the classical values of both two- and three-dimensional systems. This effect can partially be ascribed to the presence of boundaries, invoked by the finite number of magnetic layers.     

Ab initio calculations of magnetic structure and lattice dynamics of Fe/Pt multilayers

The magnetization distribution, its energetic characterization by the interlayer coupling constants and lattice dynamics of (001)-oriented Fe/Pt multilayers are investigated using density functional theory combined with the direct method to determine phonon frequencies. It is found that ferromagnetic order between consecutive Fe layers is favoured, with the enhanced magnetic moments at the interface. The bilinear and biquadratic coupling coefficients between Fe layers are shown to saturate fast with increasing thickness of nonmagnetic Pt layers which separate them. The phonon calculations demonstrate a rather strong dependence of partial iron phonon densities of states on the actual position of Fe monolayer in the multilayer structure.     

The effect of interlayer coupling on critical current density in Bi2212 system

The dependences of critical current density J _c on the interlayer coupling strength and magnetic field in Bi2212 crystals were obtained by measuring the magnetic loop of the crystals with different interlayer coupling strengths. It was revealed that J _c decreases with the decrease in the interlayer coupling of the crystals. The relation of J _{c ∞ exp} (−H ^β) was also found in the crystals, and further analysis indicated that it was the result of Zeldov pinning potential model. __________ Translated from Chinese Journal of Low Temperature Physics, 2005, 27(1) (in Chinese)     

Interlayer exchange between impurity states in iron/silicon multilayers

A model is proposed for exchange coupling between ferromagnetic metal layers through a nondegenerate semiconductor interlayer with point defects. The asymptotics of the exchange integrals is calculated. It is shown that the interlayer exchange can reverse sign depending on the position and occupation of impurity states in the interlayer. The results provide a qualitative explanation of the experimental data obtained for iron/silicon multilayers.     

Phase Diagram of Antiferromagnetically Exchange-Coupled Bilayer

Magnetic hysteresis properties of antiferromagnetically exchange-coupled bilayer structures, in which the two magnetic layers have different magnetic parameters and thicknesses, are studied within the framework of the Stoner-Wohlfarth model. Analytical expressions for the switching fields corresponding to the linear magnetic states are obtained. By adjusting the magnetic parameters or thicknesses of layers, nine different types of easy-axis hysteresis loops may exist. The phase diagram of easy-axis hysteresis loops is mapped in the k1 and k2 plane, where k1 and k2 are the ratios of magnetic anisotropy to the interlayer exchange coupling of the two magnetic layers, respectively.     

应力场对多层膜Permalloy/Cu/Co/NiO铁磁共振性质影响的理论研究

采用能量极小原理研究了Permalloy(Py)/Cu/Co/NiO多层膜结构中层间耦合强度和应力各向异性场对薄膜共振频率的影响,得到共振频率随外磁场强度变化关系式．结果发现外应力场强度和方向对系统共振频率的影响在本文中要强于层间耦合强度和交换各向异性场．外应力场方向对光学模共振频率的影响强于声学模,而外应力场强度对声学模共振频率的影响强于光学模．     

应力场对多层膜Permalloy/Cu/Co/NiO铁磁共振性质影响的理论研究

采用能量极小原理研究了Permalloy(Py)/Cu/Co/Ni O多层膜结构中层间耦合强度和应力各向异性场对薄膜共振频率的影响,得到共振频率随外磁场强度变化关系式.结果发现外应力场强度和方向对系统共振频率的影响在本文中要强于层间耦合强度和交换各向异性场,外应力场方向对光学模共振频率的影响强于声学模,而外应力场强度对声学模共振频率的影响强于光学模.     

Exponential suppression of interlayer conductivity in very anisotropic quasi-two-dimensional compounds in high magnetic field

It is shown that in rather strong magnetic field the interlayer electron conductivity is exponentially damped by the Coulomb barrier arising from the formation of polaron around each localized electron state. The theoretical model is developed to describe this effect, and the calculation of the temperature and field dependence of interlayer magnetoresistance is performed. The results obtained agree well with the experimental data in GaAs/AlGaAs heterostructures and in strongly anisotropic organic metals. The proposed theory allows to use the experiments on interlayer magnetoresistance to investigate the electron states, localized by magnetic field and disorder.