Ion-beam erosion of carbon fibers of the composites

The results of experimental studies of the structural and morphological changes of the surface of carbon PAN fibers of a carbon-carbon KUP-VM (1D) composite as a result of high-dose irradiation (10¹⁸–10¹⁹ ion/cm²) with Ne⁺ and Ar⁺ ions with an energy of 10–30 keV are presented. The threshold values of radiation damage, resulting in an amorphization of the PAN carbon fibers at room temperature and ion-induced crimping at temperatures greater than the annealing temperature of the radiation damage, are determined.     

A first study of dielectronic recombination with the super-expanded electron beam in CRYRING

A first temperature measurement of the expanded electron beam from a super-conducting magnet in the cooler of CRYRING is reported. It is based on detection of a dielectronic recombination resonance in C²⁺. For this measurement C³⁺ was stored in the ring at 3 rm{MeV/amu} energy. A fit to the resonance with free transverse and longitudinal temperatures gave 3.9 × 10^-3 eV and 4.5 × 10^-5 eV, respectively. The result is also compatible with the values of 10^-3 eV for the transverse and 6.7 ×10-5 eV for the longitudinal component, in good agreement with expected values. This revised version was published online in July 2006 with corrections to the Cover Date.     

The GaP(001) surface and the adsorption of Cs

GaP(001) cleaned by argon-ion bombardment and annealed at 500°C showed the Ga-stabilized GaP(001)(4 × 2) structure. Only treatment in 10^?5 Torr PH₃ at 500°C gave the P-stabilized GaP(001)(1 × 2) structure. The AES peak ratio $\text{P}\text{Ga}$ is 2 for the (4 × 2) and 3.5 for the (1 × 2) structure. Cs adsorbs with a sticking probability of unity up to 5 × 10¹⁴ Cs atoms cm^?2 and a lower one at higher coverages. The photoemission measured with uv light of 3660 Å showed a maximum at the coverage of 5 × 10¹⁴ atoms cm^?2. Cs adsorbs amorphously at room temperature, but heat treatment gives ordered structures, which are thought to be reconstructed GaP(001) structures induced by Cs. The LEED patterns showed the GaP(001)(1 × 2) Cs structure formed at 180°C for 10 h with a Cs coverage of 5 × 10¹⁴ atoms cm^?2, the GaP(001)(1 × 4) Cs formed at 210°C for 10 hours with a Cs coverage of 2.7 × 10¹⁴ atoms cm^?2, the GaP(001)(7 × 1) and the high temperature GaP(001)(1 × 4), the latter two with very low Cs content. Desorption measurements show three stability regions: (a) between 25–150°C for coverages greater than 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.2 eV; (b) between 180–200°C with a coverage of 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.8 eV; (c) between 210–400°C with a coverage of 2.7 × 10¹⁴ atoms cm^?2, and an activation energy of 2.5 eV.     

Fundamental absorption edge of evaporated amorphous WO3 films

The fundamental absorption edge of evaporated WO₃ films is investigated. The optical gap of the virgin film is estimated to be 3.41 eV at room temperature and it decreases with increase of annealing temperature up to 200°C. Annealing at 300°C leads to change in the spectral shape, which is caused by crystallization. For the films annealed at 200°C, temperature coefficient of the optical gap is estimated to be ?2×10^?4 eV/K and the slope of Urbach's tail is found to be independent of measuring temperature up to 200°C. With electrolytic coloration, shift of the optical gap toward higher energy is observed. Magnitude of this shift is estimated to be 0.05 eV at the color center concentration of 7.5×10²¹ cm^?3 when H⁺ electrolyte is used. If Li⁺ electrolyte is used, the magnitude of this shift is about three times larger than in the case of H⁺ electrolyte. This fact is interpreted by a small change in the host matrix structure owing to the injection of proton or Li⁺ during coloration.     

Fundamental absorption edge of evaporated amorphous WO3 films

The fundamental absorption edge of evaporated WO₃ films is investigated. The optical gap of the virgin film is estimated to be 3.41 eV at room temperature and it decreases with increase of annealing temperature up to 200°C. Annealing at 300°C leads to change in the spectral shape, which is caused by crystallization. For the films annealed at 200°C, temperature coefficient of the optical gap is estimated to be −2×10⁻⁴ eV/K and the slope of Urbach's tail is found to be independent of measuring temperature up to 200°C. With electrolytic coloration, shift of the optical gap toward higher energy is observed. Magnitude of this shift is estimated to be 0.05 eV at the color center concentration of 7.5×10²¹ cm⁻³ when H⁺ electrolyte is used. If Li⁺ electrolyte is used, the magnitude of this shift is about three times larger than in the case of H⁺ electrolyte. This fact is interpreted by a small change in the host matrix structure owing to the injection of proton or Li⁺ during coloration.     

Swift heavy ion provoked structural, optical and electrical properties in SnO2 thin films

SnO₂ thin films grown on glass substrates at 300 ^°C by reactive thermal evaporation and annealed at 600 ^°C were irradiated by 120 MeV Ag⁹⁺ ions. Though irradiation is known to induce lattice disorder and suppression of crystallinity, we observe grain growth at a certain fluence of irradiation. X-ray diffraction (XRD) revealed the crystalline nature of the films. The particle size estimated by Scherrer’s formula for the irradiated films was in the range 10–25 nm. The crystallite size increases with increase in fluence up to 1×10¹² ions?cm^?2, whereas after that the size starts decreasing. Atomic force microscope (AFM) results showed the surface modification of nanostructures for films irradiated with fluences of 1×10¹¹ ions?cm^?2 to 1×10¹³ ions?cm^?2. The UV–visible spectrum showed the band gap of the irradiated films in the range of 3.56 eV–3.95 eV. The resistivity decreases with fluence up to 5×10¹² ions?cm^?2 and starts increasing after that. Rutherford Backscattering (RBS) reveals the composition of the films and sputtering of ions due to irradiation at higher fluence.     

Fluence dependant formation of <Emphasis Type="Italic">β</Emphasis>-SiC by ion implantation and thermal annealing

The β-SiC nanocrystals were synthesized by the implantation of carbon ions (C⁻) into silicon followed by high-temperature annealing. The carbon fluences of 1×10¹⁷, 2×10¹⁷, 5×10¹⁷, and 8×10¹⁷ atoms/cm² were implanted at an ion energy of 65 keV. It was observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100 °C for 1 h. However, it was observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×10¹⁷ atoms/cm². Above this fluence the amount of β-SiC appears to saturate. The Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and X-ray diffraction (XRD) techniques were used to characterize the samples.     

On EAS spectrum with extremely low content of hadrons in the primary-energy range ∼10<Superscript>14</Superscript>−10<Superscript>15</Superscript> eV

The distribution of energy fluxes of the hadron component of extensive air showers through an ion-ization calorimeter in the primary-energy range ～3 × 10¹³?10¹⁶ eV is considered. Extensive air showers with zero and minimum energy fluxes of the hadron component are selected. It is concluded that the primary-energy range E ₀ ≈ 1 × 10¹⁴?2 × 10¹⁵ eV contains isotropic γ radiation with a spectrum close to bell-shaped, having a maximum near E ₀ ≈ 2.2 × 10¹⁴ eV and an additional peak near E ₀ ≈ 1.6 × 10¹⁵ eV.     

Magnetic structure of ion-implanted bubble garnets

The surface magnetic structure of bubble garnet films implanted with 80 keV Ne⁺ ions has been investigated by conversion-electron Mössbauer spectroscopy in conjunction with backscattered X-ray Mössbauer spectroscopy. For lower doses (～1–3 × 10¹⁴Ne⁺cm^-2) a ferrimagnetic component with in-plane magnetization coexists with a smaller paramagnetic phase in the implanted layer; for a dose of 5 × 10¹⁴Ne⁺cm^-2 only a paramagnetic phase is observed.     

Energy spectrum of primary cosmic rays at energies of 2 × 10<Superscript>13</Superscript> to 5 × 10<Superscript>17</Superscript> eV,according to Tien Shan data

The primary cosmic ray energy spectrum at energies of 10¹⁵ to 5 × 10¹⁷ eV is presented using the results from observations by the Tien Shan HADRON array. The spectrum was obtained from the spectrum of showers according to the number of electrons using a new way of determining the parameter of spatial distribution function S of electrons. The energy spectrum can be extended to low energies up to 2 × 10¹³ eV using data from separate experiments at the former Tien Shan array. Conclusions are drawn regarding changes in the form of the spectrum and its chemical composition at energies over 10¹⁶ eV. The spectrum is compared to the results from the TUNKA installation.     

反冲原子对低速离子轰击Si表面时电子发射产额的影响

在兰州重离子加速器国家实验室电子回旋共振离子源高电荷态原子物理实验平台上,用低能(0.75keV/u≤EP/MP≤10.5keV/u,即3.8×105m/s≤vP≤1.42×106m/s)He2+,O2+和Ne2+离子束正入射到自清洁Si表面时二次电子发射产额的实验结果.结果表明电子发射产额γ近似正比于入射离子动能EP/MP.在相同动能下,γ(O)γ(Ne)γ(He),对于原子序数ZP比较大的O2+和Ne2+离子,ZP大者反而γ小,这与较高入射能量时的结果截然不同.通过计算不同入射能量下入射离子的阻止能损S,发现反冲原子对激发二次电子的作用随入射离子能量的降低显著增大,这正是导致在较低能量范围内二次电子发射产额与较高入射能量时存在差异的主要原因.     

Tribological characterization of TiCN coatings deposited by two crossed laser ablation plasma beams

The simultaneous laser ablation of two targets (graphite and titanium) in an Ar-N₂ gas mixture was carried out to deposit thin films of the ternary compound TiCN at room temperature. The base conditions used to produce the TiN without carbon were taken from our previous studies. The experimental conditions for the ablation of the carbon target were varied so that the carbon content in the films could be changed depending on the carbon ion energy. The control of the experimental conditions was carried out using a Langmuir planar probe which permitted the determination of the mean kinetic ion energy. The maximum hardness value of 35 GPa, was obtained with a carbon ion energy of about 250 eV, which corresponds to a film with 5 at% carbon content. In order to perform tribological and scratch tests, two types of substrate were used: nitrided AISI 316 stainless steel and AISI 316 stainless steel previously coated with a thin titanium layer (～50 nm). Values of the wear rate in the range of 1.39×10^?6 to 7.45×10^?5 mm³?N^?1?m^?1, friction coefficient from 0.21 to 0.28 and adhesion from scratch test measurements up to 80 N for final critical load, were obtained.     

Dielectronic recombination of Li-like neon and argon

We have measured dielectronic recombination rates and energies for n=0 transitions of Ne⁷⁺ and Ar¹⁵⁺ beams stored in CRYRING. The energy resolution was in the order of 10^–2 eV FWHM; the absolute accuracy in the position of the resonances is in the same order. The energy positions of the dielectronic recombination resonances are compared to theoretical calculations of the fine-structure splittings.     

Photodesorption from powdered zinc oxide

Mass spectrometric measurements of photodesorption from powdered ZnO under controlled radiation are reported. Neutral carbon dioxide and atomic oxygen prevail as the desorbing species. From photodesorption rate decay curves we obtain cross sections for photodesorption of ~ 2 × 10^?17 cm² for O and ~4 × 10^?19 cm² for CO₂. Both species desorb only when the incoming photon energy exceeds the ZnO band gap energy (3.2 eV). The desorption rate is linear with incoming photon flux. All the data seem to support a substrate dependent process of photodesorption by neutralization of chemisorbed species by photogenerated holes. The temperature dependence of the photodesorption rate for CO₂ yields a value of 0.26 eV for the apparent binding energy of the physisorbed CO₂ molecule.     

Subject index

Field-emission energy distributions from the (100) facet of Ge exhibit a double peak. Comparison of the measured distributions with theory shows that the lower energy peak arises from valence band emission while the higher energy peak represents emission from a band of surface states overlapping the valence band. The field-emission energy distribution from the surface states is a maximum at 0.18 eV above the valence band edge. The surface of the emitter is found to be 4kT degenerate n-type with an applied field of $\text{3 × 10}{}^7\text{V}\text{cm}$. This implies 6.3 × 10¹² surface states/cm² at the center of the clean, annealed (100) facet. The effect of the applied field is to broaden the surface state distribution. The degree of broadening can be accounted for by the Stark effect. Adsorption of contamination from the vacuum system ambient or geometric alteration of the surface from the annealed end form reduces the number of surface states.     

Radiation defects in Si of high purity

Abstract

Radiation defects created by γ-irradiation of Co⁶⁰ and fast neutrons in high purity p-Si (p = 5×10³ to 4 × 10⁴ Ω.cm) and n-Si (p = 4 × 10² to 5 × 10³ Ω.cm) are investigated by measurements of Hall effect, resistivity and minority carrier lifetime. The oxygen concentration in the crystals is in the range of 5 × 10¹⁴ to 5 × 10¹⁵ cm^?3.

It is shown that stable γ-defects at 300 °K are divacancies and complexes of vacancies with donor or acceptor impurities. Divacancies introduced by γ-irradiation are the secondary defects. They become predominant after ‘exhaustion’ of the dopant. When divacancies become the predominant defects the Fermi level occupies its boundary position E_v +0.39 eV in the gap. At low doses (Φ<10¹⁶ photons/cm²) vacancy-impurity complexes and at heavy doses (Φ>10¹⁷ photons/cm²) divacancies play the main role in the recombination process.

In neutron irradiation disordered regions are introduced and the level at E_v +0.35 eV is observed. The Fermi level in both n- and p-Si shifts to the middle of the gap. At the annealing of disordered regions in the interval 200 to 250 °C the level at E_v +0.27 eV appears and Fermi level occupies its boundary position at E_v +0.39 eV. This indicates that divacancies become the predominant defects which can be formed as secondary defects at the destruction of the disordered regions.     

Effect of Thermal Treatment on the Structure of Multi-walled Carbon Nanotubes

The effects of vacuum annealing and oxidation in air on the structure of multi-walled carbon nanotubes (MWCNTs) produced by a large-scale catalytic chemical vapor deposition (CCVD) process are studied using Raman spectroscopy and transmission electron microscopy (TEM). A detailed Raman spectroscopic study of as-produced nanotubes has also been conducted. While oxidation in air up to 400°C removes disordered carbon, defects in tube walls are produced at higher temperatures. TEM reveals that MWCNTs annealed at 1,800°C and above become more ordered than as-received tubes, while the tubes annealed at 2,000°C exhibit polygonalization, mass transfer and over growth. The change in structure is observable by the separation of the Raman G and D′ peaks, a lower R-value (I _D/I _G ratio), and an increase in the intensity of the second order peaks. Using wavelengths from the deep ultraviolet (UV) range (5.08 eV) extending into the visible near infrared (IR) (1.59 eV), the Raman spectra of MWCNTs reveal a dependence of the D-band position proportional to the excitation energy of the incident laser energies.     

Surface diffusion of lead on tungsten

Field electron microscopy is used to study the surface diffusion of lead on tungsten. A simple method to measure rough values of the diffusion coefficient and its dependence on sub-monolayer coverage is described and tested. In the region around (001) the displacement energy found is about 1.30 eV/atom up to 10¹⁵ atoms/cm² where it decreases to 0.78 eV/atom. In the residual region except (110) this energy at 1.5×10¹⁴ atoms/cm² is 1.22 eV/atom, it decreases at 4 × 10¹⁴ atoms/cm² to 0.61 eV/atom and increases at 10¹⁵ atoms/cm² to 0.78 eV/atom. Corresponding values of the diffusion coefficient D and of the preexponential D₀ are given. The dependence of D on submonolayer coverage is discussed.     

Absolute cross sections and kinetic energy release distributions for electron-impact ionization and dissociation of CD<Superscript>+</Superscript><Subscript>4</Subscript>

Absolute cross sections for electron-impact dissociative excitation and ionization of CD⁺ ₄ leading to formation of ionic products (CD²⁺ ₄, CD⁺ ₃, CD⁺ ₂, CD⁺, C⁺, D⁺ ₃, D⁺ ₂, and D⁺) have been measured. The animated crossed-beams method is applied in the energy range from the reaction threshold up to 2.5 keV. Around 100 eV, the maximum cross sections are found to be (3.8±0.2) ×10^-19 cm²,  cm², (7.1±0.8) ×10^-17 cm², (9.0±0.8) × 10^-17 cm² and (3.7±0.4) ×10^-17 cm² for the heavy carbonaceous ions CD²⁺ ₄, CD⁺ ₃, CD⁺ ₂, CD⁺ and C⁺ respectively. For the light fragments, D⁺ ₃, D⁺ ₂, and D⁺, the cross sections around the maximum are found to be (5.0±0.6) ×10^-19 cm², (1.7± 0.2) ×10^-17 cm² and (10.6±1.0) ×10^-17 cm², respectively. The cross sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. The analysis of ionic product velocity distributions allows determination of the kinetic energy release distributions which are seen to extend from 0 to 9 eV for heavy fragments, and up to 14 eV for light ones. The comparison of present energy thresholds and kinetic energy release with available published data gives information about states contributing to the observed processes. Individual contributions for dissociative excitation and dissociative ionization are determined for each detected product. A complete database including cross sections and energies is compiled for use in fusion application.     

On the bound states in the muonic molecular ions

Absolute cross sections for electron impact ionization and dissociation of OH⁺ and OD⁺ leading to the formation of the OH²⁺, O⁺, O²⁺, O³⁺ and D⁺ ions have been measured by applying the animated electron-ion beam method in the energy range from the respective reaction thresholds up to 2.5 keV. The maximum of the single ionization cross section is found to be (0.95? ± ?0.02) × 10^?19 cm² at 155 eV. The maximum total cross sections for O⁺ and D⁺ fragments production are observed to be (15.7? ± ?0.2) × 10^?17 cm² at 95 eV and (10.8? ± ?0.5) × 10^?17 cm² at 95 eV, respectively. The cross sections for O²⁺ and O³⁺ are much smaller, (5.37? ± ?0.04) × 10^-18 cm² at 135 eV and (7.95? ± ? 0.23) × 10^-20 cm² at 315 eV, respectively. The collected data are analyzed in details in order to determine separately the contributions of dissociative excitation and of dissociative ionization to the O⁺ and D⁺ fragments production.