霍尔线位移传感器静态特性的研究

在不同环境温度下,互换霍尔位移传感器的输入/输出端,对其静态特性进行实验测试。结果表明：在霍尔元件顺、反接及不同的环境温度下,其静态特性差异明显,从理论上对实验现象进行了分析。     

Magnetism and Hall effect of the Heusler alloy Co2ZrSn synthesized by melt-spinning process

Magnetization and Hall resistivity have been measured for the Heusler alloy Co₂ZrSn synthesized by the melt-spinning process. The temperature dependence of magnetization follows the spin-wave theory at a low temperature. Abnormal behaviors are observed both in resistance and Hall effect below 8 K. The present Hall resistivity measurement shows that the anomalous Hall effects coexist with normal Hall effects. The negative value of normal Hall coefficient over the whole temperature range reveals that the major charge carriers are electrons. The anomalous Hall coefficient is proportional to the zero-field resistivity, suggesting that magnetic skew scattering is the dominant mechanism in the ferromagnetic regime. The reason for the abnormity below 8 K during transport is discussed.     

Metamorphosis of the quantum Hall ferromagnet at nu=2/5

We report on the dramatic evolution of the quantum Hall ferromagnet in the fractional quantum Hall regime at nu=2/5 filling. A large enhancement in the characteristic time scale gives rise to a dynamical transition into a novel quantized Hall state. The observed Hall state is determined to be a zero-temperature phase distinct from the spin-polarized and spin-unpolarized nu=2/5 fractional quantum Hall states. It is characterized by a strong temperature dependence and puzzling correlation between temperature and time.     

高性能石墨烯霍尔传感器

本文回顾了石墨烯霍尔传感器的相关研究工作.通过改善石墨烯生长转移和霍尔元件的微加工工艺,石墨烯霍尔元件和霍尔集成电路都展示出超越传统霍尔传感器的优异性能.石墨烯霍尔元件的灵敏度、分辨率、线性度和温度稳定性等重要指标都优于传统商用霍尔元件.通过开发一套钝化工艺,霍尔元件的稳定性有了明显提升.结合石墨烯材料的特点,展示了石墨烯在柔性磁传感和多功能传感领域的新颖应用.此外,成功实现了石墨烯/硅互补型金属-氧化物-半导体(CMOS)混合霍尔集成电路,并进行了应用展示.通过发展一套低温加工工艺(不超过180℃),将石墨烯霍尔元件制备在硅基CMOS芯片的钝化层上,从而与硅基CMOS电路实现了单片集成.本文的研究结果表明石墨烯在霍尔磁探测方向拥有重大的性能优势,在产业化应用中有巨大发展潜力.     

Tunable anomalous Hall effect in a nonferromagnetic system

We measure the low-field Hall resistivity of a magnetically doped two-dimensional electron gas as a function of temperature and electrically gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew scattering of carriers by disorder near the crossover to localization.     

Contributions to photodoping in oxygen-deficient YBa2Cu3Ox films

We report our studies on the superconducting and normal-state properties of metallic thin films ( 52 K) exposed to long-term white-light illumination (photodoping). It was observed that the effects of photoexcitation strongly depended on the temperature at which the photodoping was performed. At low temperatures, both the Hall mobility and the Hall number were photoenhanced, whereas, at temperatures slightly below room temperature, the Hall mobility initially showed an abrupt increase followed by a long-term decrease, and the Hall number increased even stronger than at low temperatures. The enhancement of the film's superconducting transition temperature T_c, caused by photodoping, exhibited the same temperature dependence as the enhancement of the Hall number, being largest ( 2.6 K) at high temperatures. From the asynchronous behavior of the Hall quantities, we conclude that both the photoassisted oxygen ordering and charge transfer mechanisms contribute to photodoping. The relative contributions of both mechanisms and, thus, the electronic properties of the photoexcited state are strongly temperature dependent. Studies of the relaxation of the photoexcited state at 290 K showed an unexpectedly short relaxation time of the Hall mobility after termination of the illumination. The relaxation saturated somewhat below the initial, undoped value, similarly to the decrease of the Hall mobility, observed upon long illumination. These latter findings give evidence for a competition between the oxygen ordering and thermal disordering processes during and after the photoexcitation in the high-temperature range. Received: 13 October 1997 / Accepted: 19 November 1997     

Anomalous Hall effect and electron transport in ferromagnetic MnBi films

The electron transport properties of highly c-axis oriented MnBi thin films of various thicknesses have been investigated. Samples are metallic but the low temperature resistivity shows an unusual T(3) dependence. Transverse Hall effect measurements show that both the ordinary and anomalous Hall coefficients decrease with decreasing temperature below 300 K, but the ordinary Hall coefficient (R(0)) undergoes a sign reversal around 105 K, where the magnetic anisotropy also changes sign. Analysis of the Hall data for various samples shows that the anomalous Hall coefficient (R(s)) exhibits a strong ρ(2) dependence, where ρ is the longitudinal resistivity.     

Temperature- and magnetic field dependence of the Hall effect in the heavy fermion system CeCu6

The temperature dependence of the Hall coefficient and the magnetic field dependence of the Hall resistivity of CeCu₆ have been determined in the temperature range 80 mK<T<10 K and in magnetic fields up to 10T. The Hall coefficientR _H shows a very strong temperature dependence with two extrema and a change of sign, and the Hall resistivity _xy has a strong field dependence with up to two changes of sign. The observed behavior can partially be explained by the field- and temperature dependence of the skew scattering contribution to the Hall coefficient.     

Temperature dependent weak field Hall resistance in two-dimensional carrier systems

Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers. The temperature-dependent 2D Hall coefficient shows striking nonmonotonicity in strongly screened systems, and, in particular, we qualitatively explain the recent puzzling experimental observation of a decreasing Hall resistance with increasing temperature in a dilute 2D hole system. We predict that the impurity scattering limited Hall coefficient will eventually increase with temperature at higher temperatures.     

高灵敏度Sb基量子阱2DEG的霍尔器件

用分子束外延技术将高灵敏度的InAs/AlSb量子阱结构的Hall器件赝配生长在GaAs衬底上。设计了由双δ掺杂构成的Hall器件的新结构,有效地提高了器件的面电子浓度。与传统的没有掺杂的InAs/AlSb量子阱结构的Hall器件相比,室温下器件电子迁移率从15 000 cm²·V^-1·s^-1 提高到16 000 cm²·V^-1·s^-1。AFM测试表明材料有好的表面形态和结晶质量。从77 K 到300 K对Hall器件进行霍尔测试,结果显示器件不同温度范围有不同散射机构。双δ掺杂结构形成高灵敏度、高二维电子气（2DEG）浓度的InAs/AlSb异质结Hall器件具有广阔的应用前景。     

Room-temperature reversible spin Hall effect

Reversible spin Hall effect comprising the direct and inverse spin Hall effects was electrically detected at room temperature. A platinum wire with a strong spin-orbit interaction is used not only as a spin current absorber but also as a spin-current source in the specially designed lateral structure. The obtained spin Hall conductivities are 2.4 x 10(4) (Omega m)(-1) at room temperature, 10(4) times larger than the previously reported values of semiconductor systems. Spin Hall conductivities obtained from both the direct and inverse spin Hall effects are experimentally confirmed to be the same, demonstrating the Onsager reciprocal relations between spin and charge currents.     

Temperature dependence of Hall electron density of GaN-based heterostructures

The theoretic calculation and analysis of the temperature dependence of Hall electron density of a sample AlGaN/GaN heterostructure has been carried out in the temperature range from 77 to 300K. The densities of the two-dimensional electron gas and the bulk electrons are solved by self-consistent calculation of one-dimensional Schr?dinger and Poisson equations at different temperatures, which allow for the variation of energy gap and structure strain, and are used for evaluation of the temperature dependence of Hall electron density. The calculated Hall electron density agrees with the measured one quite well with the appropriate bulk mobility data. Analysis revealed that for the temperature range considered, even in the heterostructures with a small bulk conductance the factors that determine the Hall mobility and electron density could be of different sources, and not just the two-dimensional electron gas as generally supposed.     

Effect of Hall and ion-slip on the peristaltic transport of nanofluid: A biomedical application

The peristaltic flow of viscous nanofluid in a channel with compliant walls is examined. The flow analysis is presented in the presence of Hall and ion-slip effects. The resulting equations through long wavelength and low Reynolds number approaches are solved. Stream function is obtained in closed form. Attention has been given to the influence of Brownian motion, thermophoresis and Hall and ion slip parameters on the velocity, temperature and concentration profiles. The results show an affective increase in the temperature and nanoparticles concentration with the increase in the strength of Brownian motion effects. Similar results are observed for Hall and ion slip parameters. Further heat transfer coefficient is an increasing function of Hall and ion-slip parameters. Also decrease in the size of trapped bolus is shown for Hall and ion-slip parameters.     

Explanation of the temperature variation of Hall coefficient of doped bismuth

The Hall effect in single crystals of bismuth doped with tin and lead has been measured in the temperature range 80 to 300 K. An attempt has been made here to explain the observed variations of Hall coefficient with temperature by considering the relative variation of the free carrier concentrations with temperature in different bands in alloys of bismuth in addition to variation of other parameters. Calculations have been made to see the effect of the overlap on Hall coefficient for different values of band overlap. The experimental curves are in satisfactory agreement with the theoretical calculations.     

Lorenz number determination of the dissipationless nature of the anomalous Hall effect in itinerant ferromagnets

We have measured the thermal Hall conductivity for ferromagnetic Ni and Ni0.97Cu0.03. In the low temperature region ( less, similar 100 K), we show for the first time that the Wiedemann-Franz law is satisfied even for the anomalous Hall current. While the Hall Lorenz number for the normal part decreases rapidly with temperature, that for the anomalous part shows much less deviation from the free-electron Lorenz number. This evidences the dissipationless nature of the anomalous Hall effect.     

Study under high pressure on the Hall effect in the magnetically ordering Kondo lattice material CeAl2

Measurements of the Hall effect in CeAl₂ have been performed between 1.5 K and 4.2 K under pressures up to 2 GPa. The temperature dependence of the Hall coefficient has been found to show increasingly distinct structure with rising pressure, which is obviously correlated to the magnetic ordering transition in this material. Under pressures exceeding about 1.6 GPa the Hall coefficient changes its sign in the temperature range under consideration.     

Reconstruction of fractional quantum Hall edges

We study the interplay of electron-electron interaction, confining potential and effects of finite temperature at the edge of a quantum Hall liquid. Our exact diagonalization calculation indicates that edge reconstruction occurs in the fractional quantum Hall regime for a variety of confining potential, including ones that correspond to a "sharp" edge. Our finite temperature Hartree-Fock calculation for integer quantum Hall edges indicates that reconstruction is suppressed above a certain temperature. We discuss the implication of our results on recent edge tunneling and microwave absorption experiments.     

Direct measurement of the coherence length of edge states in the integer quantum Hall regime

We have determined the finite temperature coherence length of edge states in the integer quantum Hall effect regime. This was realized by measuring the visibility of electronic Mach-Zehnder interferometers of different sizes, at filling factor 2. The visibility shows an exponential decay with the temperature. The characteristic temperature scale is found inversely proportional to the length of the interferometer arm, allowing one to define a coherence length l_(phi). The variations of l_(phi) with magnetic field are the same for all samples, with a maximum located at the upper end of the quantum Hall plateau. Our results provide the first accurate determination of l_(phi) in the quantum Hall regime.     

Hall resistivity sign reversal in superconductor's mixed state

In this Letter, we propose a mixed-charge model to explain the sign reversals of Hall resistivity for p-type high T_c superconductors in the mixed state. The applied field vs temperature boundaries separating positive and negative Hall resistivities would be suppressed in both the underdoped and overdoped regimes, and the suppression is more severe in the overdoped regime. Although flux pinning damps the magnitude of Hall resistivity, from both positive and negative sides, it does not change either the temperature or the applied field values where the Hall resistivity changes sign.     

PID自动控温仪在变温霍耳效应研究中的应用简

应用计算机控制的PID控温仪研究了锑化铟样品的变温霍耳效应。通过在线控制并记录77K～300K温度范围内锑化铟样品的霍耳电压，估测了样品的禁带宽度。