Influence of oxygen growth pressure on laser ablated Cr-doped In2O3 thin films

We present a systematic investigation of the effects of oxygen growth pressure on the structural, optical, and electrical properties of In₂O₃:Cr thin films grown by pulsed laser deposition. X-ray diffraction analysis showed increases in lattice constant from 10.103 Å to 10.337 Å, and in particle size from 13.9 nm to 35.5 nm as the oxygen growth pressure increased from 7.5 × 10⁻⁶ Torr to 7.5 × 10⁻³ Torr, respectively. The observed shift in the X-ray diffraction peaks to lower angles was assumed to be caused by the reduction in the lattice defect density, precisely oxygen vacancies. The optical transparency increased with partial oxygen pressure (P_O2), and an average transmittance of 85% was obtained at 7.5 × 10⁻³ Torr. The films are highly conducting with resistivity as low as 2 × 10⁻⁴ Ω cm and mobility as high as 133 cm/V s. Temperature dependent resistivity measurements in the 45 < T < 300 K temperature range reveal that films grown at 7.5×10⁻⁶≤P_O2≤7.5×10⁻⁴ Torr exhibit negative temperature coefficient of resistivity (TCR) below approximately T = 60 K, T = 120 K, T = 160 K; then positive TCR in the temperature intervals 60 < T < 300 K, 120 < T < 300 K, and 160 < T < 300 K, respectively. This suggests that two disparate mechanisms govern electrical dc transport in the two temperature regions. Film grown at P_O2 of 7.5 × 10⁻³ Torr displayed typical semiconducting behavior with negative TCR in the whole temperature region.     

Spectral characterization and energy levels of Cr:Sc2(MoO4)3 crystal

This paper reports the spectral properties and energy levels of Cr³⁺:Sc₂(MoO₄)₃ crystal. The crystal field strength Dq, Racah parameter B and C were calculated to be 1408 cm⁻¹, 608 cm⁻¹ and 3054 cm⁻¹, respectively. The absorption cross sections σ_α of ⁴A₂→⁴T₁ and ⁴A₂→⁴T₂ transitions were 3.74×10⁻¹⁹ cm² at 499 nm and 3.21×10⁻¹⁹ cm² at 710 nm, respectively. The emission cross section σ_e was 375×10⁻²⁰ cm² at 880 nm. Cr³⁺:Sc₂(MoO₄)₃ crystal has a broad emission band with a broad FWHM of 176 nm (2179 cm⁻¹). Therefore, Cr³⁺:Sc₂(MoO₄)₃ crystal may be regarded as a potential tunable laser gain medium.     

Preparation and mass transport properties of Li2.3Mo6S7.7

Unsuccessful attempts were made to prepare Li_xMo₆S_7.7 by direct ionic exchange of Cu₂Mo₆S_7.7 using aqueous, acetontrille, and molten salt solvents. Li_2.3Mo₆S_7.7 was eventually prepared by lithiation of Mo₆S₈ using n-butyl lithium reagent. The mass transport properties of hot-pressed samples were measured using a four-point dc technique and the following values at 415°C for the lithium ionic conductivity, .4×10⁻⁴ (ohms cm⁻¹) and lithium chemical diffusion coefficient 3.5×10⁻⁷ cm²/s, were derived. A possible explanation for the relatively low lithium ion mobility in Li_2.3Mo₆S_7.7 is discussed.     

Exceptional sensitivity to neutrino parameters with a two-baseline Beta-beam set-up

We examine the reach of a Beta-beam experiment with two detectors at carefully chosen baselines for exploring neutrino mass parameters. Locating the source at CERN, the two detectors and baselines are: (a) a 50 kton iron calorimeter (ICAL) at a baseline of around 7150 km which is roughly the magic baseline, e.g., ICAL@INO, and (b) a 50 kton Totally Active Scintillator Detector at a distance of 730 km, e.g., at Gran Sasso. We choose ⁸B and ⁸Li source ions with a boost factor γ of 650 for the magic baseline while for the closer detector we consider ¹⁸Ne and ⁶He ions with a range of Lorentz boosts. We find that the locations of the two detectors complement each other leading to an exceptional high sensitivity. With γ=650 for ⁸B/⁸Li and γ=575 for ¹⁸Ne/⁶He and total luminosity corresponding to 5×(1.1×10¹⁸) and 5×(2.9×10¹⁸) useful ion decays in neutrino and antineutrino modes respectively, we find that the two-detector set-up can probe maximal CP violation and establish the neutrino mass ordering if sin²2θ₁₃ is 1.4×10⁻⁴ and 2.7×10⁻⁴, respectively, or more. The sensitivity reach for sin²2θ₁₃ itself is 5.5×10⁻⁴. With a factor of 10 higher luminosity, the corresponding sin²2θ₁₃ reach of this set-up would be 1.8×10⁻⁵, 4.6×10⁻⁵ and 5.3×10⁻⁵ respectively for the above three performance indicators. CP violation can be discovered for 64% of the possible δ_CP values for sin²2θ₁₃10⁻³ (8×10⁻⁵), for the standard luminosity (10 times enhanced luminosity). Comparable physics performance can be achieved in a set-up where data from CERN to INO@ICAL is combined with that from CERN to the Boulby mine in United Kingdom, a baseline of 1050 km.     

Substrate temperature influenced structural, electrical and optical properties of dc magnetron sputtered MoO3 films

Molybdenum oxide (MoO₃) films were deposited on glass and (1 1 1) silicon substrates by sputtering of metallic molybdenum target in an oxygen partial pressure of 2 × 10⁻⁴ mbar and different substrate temperatures in the range 303-623 K using dc magnetron sputtering technique. X-ray photoelectron spectrum of the films formed at 303 K showed asymmetric Mo 3d_5/2 and Mo 3d_3/2 peaks due to the presence of mixed oxidation states of Mo⁵⁺ and Mo⁶⁺ while those deposited at substrate temperatures ≥473 K were in Mo⁶⁺ oxidation state of MoO₃. The films formed at substrate temperatures ≥473 K were polycrystalline in nature with orthorhombic α-phase MoO₃. Fourier transform infrared spectra of the films showed an absorption band at 1000 cm⁻¹ correspond to the stretching vibration of MoO, the characteristic of the α-MoO₃ phase. The electrical resistivity increased from 3.3 × 10³ to 8.3 × 10⁴ Ω cm with the increase of substrate temperature from 303 to 473 K respectively due to improvement in the crystallinity of the films. Optical band gap of the films increased from 3.03 to 3.22 eV with the increase of substrate temperature from 303 to 523 K.     

Rotational absorption spectrum of methylene fluoride in the 20–100 cm region

The pure rotational spectrum of CH₂F₂ was recorded in the 20–100 cm⁻¹ spectral range and analyzed to obtain rotation and centrifugal distortion constants. Analysis of the data yielded rotation constants: A = 1.6392173 ± 0.0000015, B = 0.3537342 ± 0.00000033, C = 0.3085387 ± 0.00000027, τ_aaaa = −(7.64 ± 0.46) × 10⁻⁵, τ_bbbb = −(2.076 ± 0.016) × 10⁻⁶, τ_cccc = −(9.29 ± 0.12) × 10⁻⁷, T₁ = (4.89 ± 0.20) × 10⁻⁶, and T₂ = −(1.281 ± 0.016) × 10⁻⁶cm⁻¹.     

Effect of fluorine doping on highly transparent conductive spray deposited nanocrystalline tin oxide thin films

The undoped and fluorine doped thin films are synthesized by using cost-effective spray pyrolysis technique. The dependence of optical, structural and electrical properties of SnO₂ films, on the concentration of fluorine is reported. Optical absorption, X-ray diffraction, scanning electron microscope (SEM) and Hall effect studies have been performed on SnO₂:F (FTO) films coated on glass substrates. The film thickness varies from 800 to 1572 nm. X-ray diffraction pattern reveals the presence of cassiterite structure with (2 0 0) preferential orientation for FTO films. The crystallite size varies from 35 to 66 nm. SEM and AFM study reveals the surface of FTO to be made of nanocrystalline particles. The electrical study reveals that the films are degenerate and exhibit n-type electrical conductivity. The 20 wt% F doped film has a minimum resistivity of 3.8 × 10⁻⁴ Ω cm, carrier density of 24.9 × 10²⁰ cm⁻³ and mobility of 6.59 cm² V⁻¹ s⁻¹. The sprayed FTO film having minimum resistance of 3.42 Ω/cm², highest figure of merit of 6.18 × 10⁻² Ω⁻¹ at 550 nm and 96% IR reflectivity suggest, these films are useful as conducting layers in electrochromic and photovoltaic devices and also as the passive counter electrode.     

Polarization spectroscopy of ion-pair states of ICl

Molecular constants for the E0⁺(³P₂) and 1(³P₂) ion-pair states of ICl vapor have been determined using sequential two-photon polarization-labeling spectroscopy. The two states are coupled by a heterogeneous perturbation which is analyzed in some detail for low-lying vibrational levels of 1(³P₂). The I³⁵Cl potential constants for the 1(³P₂) state and the rotation-vibration constants for the set of f sublevels—i.e., the constants unaffected by coupling with the E state—are (in cm⁻¹) 1(³P₂): Y_0,0= 39103.814(32), Y_1,0= 170.213(15), Y_2,0= −0.4528(22), Y_3,0= −7.0(12) × 10⁻⁴, Y_4,0= −1.48(24) × 10⁻⁵ and Y_5,0= −6.6(19) × 10⁻⁸, Y^(f)_0,1= 5.6878(17) × 10⁻² Y^(f)_1,1= −2.110(24) × 10⁻⁴, Y^(f)_2,1= −1.23(62) × 10⁻⁷, and Y^(f)_0,1= −3.08(22) × 10⁻⁸Likewise, the I³⁵Cl constants determined for the E 0⁺(³P₂) state are E 0⁺(³P₂: Y_0,0= 39054.38(61), Y_1,0= 166.96(10), Y_2,0 = −0.3995(42), Y_0,1= 5.738(31) × 10⁻², and Y_1,1= −1.67(26) × 10⁻⁴Practical constraints in pumping the sequence E 0⁺ ← B 0⁺ ← × 0⁺ restrict the analysis of the E state to levels v = 9–15. Given the long extrapolation to the equilibrium state the 3σ statistical uncertainties quoted for these constants should be treated with caution.     

Fourier Transform Spectroscopy of theYΣ–XΠiTransition of CuO

TheY²Σ⁺–X²Π_inear-infrared electronic transition of CuO was observed at high resolution for the first time. The spectrum was recorded with the Fourier transform spectrometer associated with the McMath–Pierce Solar Telescope at Kitt Peak. The excited CuO molecules were produced in a low pressure copper hollow cathode sputter with a slow flow of oxygen. Constants for theY²Σ⁺states of CuO are:T₀= 7715.47765(54) cm⁻¹,B= 0.4735780(28) cm⁻¹,D= 0.822(12) × 10⁻⁶cm⁻¹,H= 0.46(10) × 10⁻¹⁰cm⁻¹, γ = −0.089587(42) cm⁻¹, γ_D= 0.1272(79) × 10⁻⁶cm⁻¹,b_F= 0.12347(22) cm⁻¹, andc= 0.0550(74) cm⁻¹. ImprovedX²Π_iconstants are also presented.     

Ohmic contact and space-charge-limited current in molybdenum oxide modified devices

The effect of indium-tin oxide (ITO) surface treatment on hole injection of devices with molybdenum oxide (MoO₃) as a buffer layer on ITO was studied. The Ohmic contact is formed at the metal/organic interface due to high work function of MoO₃. Hence, the current is due to space charge limited when ITO is positively biased. The hole mobility of N, N′-bis-(1-napthyl)-N, N′-diphenyl-1, 1′biphenyl-4, 4′-diamine (NPB) at various thicknesses (100–400 nm) has been estimated by using space-charge-limited current measurements. The hole mobility of NPB, 1.09×10⁻⁵ cm²/V s at 100 nm is smaller than the value of 1.52×10⁻⁴ cm²/V s at 400 nm at 0.8 MV/cm, which is caused by the interfacial trap states restricted by the surface interaction. The mobility is hardly changed with NPB thickness for the effect of interfacial trap states on mobility which can be negligible when the thickness is more than 300 nm.     

Growth of single crystal PrFeAsO1−y and its characterization

We have successfully grown single crystals of oxygen deficient oxypnictide superconductor PrFeAsO_1−y using high pressure synthesis technique. Typical crystal size is about 600 × 800 × 30 μm³, with its T_c = 44 K. Their resistivity measurements under magnetic field yield the anisotropic factor Γ  5, consistent with previous results on smaller single crystals.     

Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

The influence of the oxygen partial pressure on the properties of indium tin oxide films deposited by rf reactive magnetron sputtering has been studied. The oxygen partial pressure was varied from 3.2 × 10⁻⁴ to 1.0 × 10⁻³ mbar. It has been found that the 4 × 10⁻⁴ mbar of oxygen partial pressure is a critical point. When the oxygen partial pressure is lower than 4 × 10⁻⁴ mbar, the deposition rate of the films is high; the films have low transmittance and electrical resistivity; the X-ray diffraction shows that the films have a random orientation and the images of the scanning electron microscopy show that the films surface are smooth without structure. When the pressure is higher than 4 × 10⁻⁴ mbar, the deposition rate is low and does not change as the oxygen partial pressure is further increased; the transmittance and the electrical resistivity are both high; the films show the preferred orientation along the (440) direction; the films surface show a clear structure and as the pressure is increased further, the films become porous. Considering both the factor of transmittance and resistivity, the optimum oxygen partial pressure will be 3.6 × 10⁻⁴ mbar. The films prepared at this pressure have 80% transmittance and 9 × 10⁻⁴ Ω cm resistivity.     

Carrier-induced ferromagnetic order in the narrow gap III–V magnetic alloy semiconductor (In,Mn)Sb

Preparation and physical properties of p- and n-InMnSb epitaxial films with Mn contents up to 10% were studied with the aim of seeking phenomena induced by the spin exchange interaction between carrier and Mn spins. For p-type samples with Mn_eff=4.5×10²⁰ and p=1.1×10²⁰ cm⁻³, carrier-induced ferromagnetic order with a Curie temperature of 20 K was observed. The sign of the anomalous Hall coefficient is found to be negative. Tellurium-doped n-type samples (n=8.6×10¹⁸ cm⁻³) with net Mn contents of 10% are found to be paramagnetic.     

Analysis of the 2ν3 band of CD3F at 5.06 μm recorded under high resolution

The 2ν₃(A₁) band of ¹²CD₃F near 5.06 μm has been recorded with a resolution of 20–24 × 10⁻³ cm⁻¹. The value of the parameter (α^B − α^A) for this band was found to be very small and, therefore, the K structure of the R(J) and P(J) manifolds was unresolved for J < 15 and only partially resolved for larger J values. The band was analyzed using standard techniques and values for the following constants determined: ν₀ = 1977.178(3) cm⁻¹, B″ = 0.68216(9) cm⁻¹, D″_J = 1.10(30) × 10⁻⁶ cm⁻¹, α^B = (B″ − B′) = 3.086(7) × 10⁻³ cm⁻¹, and β^J = (D″_J − D′_J) = −3.24(11) × 10⁻⁷ cm⁻¹. A value of α^A = (A″ − A′) = 2.90(5) × 10⁻³ cm⁻¹ has been obtained through band contour simulations of the R(J) and P(J) multiplets.     

Nonlinear optical properties of Cu nanocluster composite fabricated by 180 keV ion implantation

Metal nanocluster composite glass prepared by 180 keV Cu ions into silica with dose of 5×10¹⁶ ions/cm² has been studied. The microstructural properties of the nanoclusters has been verified by optical absorption spectra and transmission electron microscopy (TEM). Third-order nonlinear optical properties of the nanoclusters were measured at 1064 and 532 nm excitations using Z-scan technique. The nonlinear refraction index, nonlinear absorption coefficient, and the real and imaginary parts of the third-order nonlinear susceptibility were deduced. Results of the investigation of nonlinear refraction by the off-axis Z-scan configuration were presented and the mechanisms responsible for the nonlinear response were discussed. Third-order nonlinear susceptibility χ⁽³⁾ of this kind of sample was determined to be 8.7×10⁻⁸ esu at 532 nm and 6.0×10⁻⁸ esu at 1064 nm, respectively.     

Sensitization of uranium fluorescence using 2,6-pyridinedicarboxylic acid: Application for the determination of uranium in the presence of lanthanides

The 2,6-pyridinedicarboxylic acid (PDA) has been shown to efficiently sensitize and enhance the fluorescence of uranium in aqueous medium. Interestingly, this ligand stabilizes the UO₂²⁺ species, which without the ligand is known to be in a negligible concentration, in aqueous medium at pH 6. The ligand sensitized enhancement of UO₂²⁺ fluorescence by PDA, provides an analytical tool for the determination of uranium at trace levels, in aqueous medium. Furthermore, PDA is also known to enhance the fluorescence of lanthanides; consequently, the simultaneous determination of uranium and lanthanides, using PDA as a fluorescence sensitizing agent, becomes a possibility, which has been demonstrated in this work. We have shown that the use of PDA yields detection limits of 2.2×10⁻⁷ M for UO₂²⁺, 1×10⁻⁸ M for Tb³⁺ and 5×10⁻⁹ M for Eu³⁺ in the simultaneous determination of these analytes.     

The bending energy levels of C2H2

Absorption spectra of C₂H₂ have been recorded between 50 and 1450 cm⁻¹, with a resolution always better than 0.005 cm⁻¹, using two different Fourier transform spectrometers. Analysis of the data provided two sets of results. First, the bending levels with Σ_t V_t(t = 4, 5) ≤ 2 were characterized by a coherent set of 34 parameters derived from the simultaneous analysis of 15 bands, performed using a matrix Hamiltonian. The following main parameters were obtained (in cm⁻¹): ω₄⁰ = 608.985196(14), ω₅⁰ = 729.157564(10); B₀ = 1.17664632(18), α₄ = −1.353535(86) × 10⁻³, α₅ = −2.232075(40) × 10⁻³; q₄⁰ = 5.24858(12) × 10⁻³, and q₅⁰ = 4.66044(12) × 10⁻³, with the errors (1σ) on the last quoted digit. Second, a more complete set of bending levels with Σ_t V_t ≤ 4, some of which have never previously been reported, and also including V₂ = 1 have been fitted to 80 parameters. This simultaneous fit involved 43 bands and used the same full Hamiltonian matrix. Some perturbations which affect the higher excited levels are discussed.     

Volatile metal β-diketonates — new precursors for the sonochemical synthesis of nanosized materials — sonolysis of thorium(IV) β-diketonates

Ultrasonic irradiation (22 kHz, Ar atmosphere) of Th(IV) β-diketonates Th(HFAA)₄ and Th(DBM)₄, where HFAA and DBM are hexafluoroacetylacetone and dibenzoylmethane respectively, causes them to decompose in hexadecane solutions, forming solid thorium compounds. The first-order rate constants for Th(IV) β-diketonate degradation were found to be (9.3±0.8)×10⁻³ for Th(HFAA)₄ and (3.8±0.4)×10⁻³ min⁻¹ for Th(DBM)₄, (T=92°C, I=3 W cm⁻²). The rate of the sonochemical reaction increased with the rising β-diketonate volatility and decreased with the rising hydrocarbon solvent vapor pressure. Solid sonication products consisted of a mixture of thorium carbide ThC₂ and Th(IV) β-diketonate partial degradation products. The average ThC₂ particle size was estimated to be about 2 nm. ThC₂ formation was attributed to the high-temperature reaction occurring within the cavitating bubble. The thorium β-diketonate partial degradation products formed in the liquid reaction zones surrounding the cavitating bubbles.     

Electron stimulated desorption of CO from

The electron impact behavior of CO adsorbed on was investigated. The desorption products observed were neutral CO, CO⁺, and O⁺. After massive electron impact residual carbon, C/W = 0.15, but not oxygen was also found, suggesting that energetic neutral O, not detected in a mass analyzer must also have been formed. Formation of β-CO, i.e., dissociated CO with C and O on the surface was not seen. The total disappearance cross section varies only slightly with coverage, ranging from 9 × 10 ⁻¹⁸ cm² at low to 5 × 10⁻¹⁸ cm² at saturation (CO/W = 0.75). The cross section for CO⁺ formation varies from 4 × 10⁻²² cm² at satura to 2 × 10⁻²¹ cm² at low coverage. That for O⁺ formation is 1.4 × 10⁻²² cm² at saturation and 2 × 10⁻²¹ cm² Threshold energies are similar to those found previously [J.C. Lin and R. Gomer, Surf. Sci. 218 (1989) 406] for and CO/Cu₁/W(110) which suggests similar mechanisms for product formation, with the exception of β-CO on clean W(110). It is argued that the absence or presence of β-CO in ESD hinges on its formation or absence in thermal desorption, since electron impact is likely to present the surface with vibrationally and rotationally activated CO in all cases; β-CO formation only occurs on surfaces which can dissociate such CO. It was also found that ESD of CO led to a work function increase of the remaining Pd₁/W(110) surface of 500 meV, which could be annealed out only at 900 K. This is attributed to surface roughness, caused by recoil momentum of energetic desorbing entities.     

Structural and optical characterization of DC magnetron sputtered molybdenum oxide films

Thin films of molybdenum trioxide were deposited on glass substrates employing direct current (DC) magnetron sputtering by sputtering of molybdenum at different oxygen partial pressures in the range 8 × 10⁻⁵–1 × 10⁻³ mbar and at a substrate temperature of 473 K. The glow discharge characteristics of magnetron cathode target of molybdenum were studied. The influence of oxygen partial pressure on the structural and optical properties of molybdenum trioxide films was investigated. The films formed at an optimum oxygen partial pressure of 2 × 10⁻⁴ mbar were polycrystalline in nature with orthorhombic α- phase and an optical band gap of 3.16 eV. The refractive index of the films formed at an oxygen partial pressure of 2 × 10⁻⁴ mbar decreased from 2.08 to 1.89 with increase of wavelength from 450 to 1,000 nm, respectively. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.