Growth of a Si nanocrystal in an oxygen atmosphere. Computer simulation

Growth of a Si nanocrystal in vacuum and in atomic-oxygen atmosphere was simulated on the basis of molecular dynamics. SiO_x nanoparticles (x = 0–0.42) containing up to 302 atoms were obtained. The shape of the nanocrystals was primarily determined by the amount of oxygen contained in them. The growth of nanocrystals in an oxygen atmosphere was accompanied by the formation of oxygen clusters inside a nanoparticle, which gave rise to considerable internal stresses. In most cases, structural relaxation increases the volume of SiO_x nanocrystals and decreases internal pressure. The angular and topological statistical characteristics of Voronoi polyhedra are indicative of a structural irregularity in oxygen clusters formed inside Si nanoparticles.     

Diffusion and reactions of interstitial oxygen species in amorphous SiO2: A review

This article briefly summarizes the diffusion and reactions of interstitial oxygen species in amorphous SiO₂ (a-SiO₂). The most common form of interstitial oxygen species is oxygen molecule (O₂), which is sensitively detectable via its characteristic infrared photoluminescence (PL) at 1272 nm. The PL observation of interstitial O₂ provides key data to verify various processes related to interstitial oxygen species: the dominant role of interstitial O₂ in long-range oxygen transport in a-SiO₂; formation of the Frenkel defect pair (Si–Si bond and interstitial oxygen atom, O⁰) by dense electronic excitation; efficient photolysis of interstitial O₂ into O⁰ with F₂ laser light (λ = 157 nm, hν = 7.9 eV); and creation of interstitial ozone molecule via reaction of interstitial O₂ with photogenerated O⁰. The efficient formation of interstitial O⁰ by F₂ laser photolysis makes it possible to investigate the mobility, optical absorption, and chemical reactions of interstitial O⁰. The observed properties of O⁰ are consistent with the model that O⁰ takes the configuration of Si–O–O–Si bond. Interstitial O₂ and O⁰ react with dangling bonds, oxygen vacancies, and chloride groups in a-SiO₂. Reactions of interstitial O₂ and O⁰ with mobile interstitial hydrogen species produce interstitial water molecules and hydroperoxy radicals. Interstitial hydroxyl radicals are formed by F₂ laser photolysis of interstitial water molecules.     

Highly efficient broadband near-infrared luminescence in Ni-doped glass ceramics films containing cordierite nanocrystals

We report on highly efficient broadband near-infrared photoluminescence (PL) in Ni²⁺-doped glass ceramics (GCs) films fabricated by annealing Si/Ni²⁺-doped glass superlattices (SNGS). Over two orders of magnitude enhancement of PL can be achieved in comparison with that from the annealed glass film. The PL lifetime of the annealed SNGS is several milliseconds, which is much longer than those of bulk GCs. The strong PL enhancement results from the formation of high-quality cordierite nanocrystals because the Si layers act as Si source for the crystal growth. This technique can be extended to fabricate other types of high-quality GCs films.     

Photoluminescence properties of erbium-doped structures of silicon nanocrystals in silicon dioxide matrix

We present a study of the photoluminescence (PL) of structures of Si nanocrystals (nc-Si) in erbium-doped amorphous silicon dioxide. It is shown that the energy of excitons confined in nc-Si of 2–5 nm sizes is efficiently transferred to Er³⁺ ions in surrounding SiO₂ and a strong PL line at 1.5 μm appears. At high excitation intensity the population inversion of Er³⁺ ion states is achieved. These results demonstrate good perspectives of Er-doped nc-Si/SiO₂ structures for possible applications in Si-based optical amplifiers and lasers.     

Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition

Dielectric layer containing CoSi₂ nanocrystals was directly fabricated by plasma-enhanced atomic layer deposition using CoCp₂ and NH₃ plasma mixed with SiH₄ without annealing process. Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy results confirmed the formation of CoSi₂ nanocrystal. The gate stack composed of dielectric layer containing CoSi₂ nanocrystals with ALD HfO₂ capping layer together with Ru metal gate was analyzed by capacitance–voltage (C–V) measurement. Large hysteresis of C–V curves indicated charge trap effects of CoSi₂ nanocrystals. The current process provides simple route for the fabrication of nanocrystal memory compatible with the current Si device unit processes.     

Structure and optical properties of light-emitting Si films fabricated by neutral cluster deposition and subsequent high-temperature annealing

As a new development of our previous study on the production of light-emitting amorphous Si (a-Si) films by the neutral cluster deposition (NCD) method, we have fabricated light-emitting Si films with improved emission intensity by the combined methods of NCD and subsequent high-temperature annealing. The structure of these films is best characterized by Si nanocrystals, surrounded by an interfacial a-SiO_x (x < 2) layer, embedded in an a-SiO₂ film. These improved Si films were observed by atomic force microscopy and high-resolution transmission electron microscopy, and analyzed by means of X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence (PL) and Fourier transform infrared-attenuated total reflection measurements. The PL curves of the annealed samples exhibit peaks around 600 nm, at almost the same position as the unannealed samples. Their PL intensities, however, have increased to approximately five times those of the unannealed samples. The source of the luminescence is most likely due to electron-hole recombination in the a-SiO₂/Si interfacial a-SiO_x layer.     

Optical and selected thermal properties of samarium-doped fluorochlorozirconate (FCZ) glass-ceramics: Formation and growth of BaCl2 nanocrystals in FCZ glass-ceramics

Photoluminescence (PL) and conventional and modulated temperature differential scanning calorimetry (DSC and MDSC) experiments have been carried out on a typical fluorochlorozirconate glass and glass-ceramics doped with Sm³⁺ and Sm²⁺ introduced by the addition of SmF₃ and a reducing agent, NaBH₄, into the initial mixture of constituents. The nominal FCZ composition was 53% ZrF₄, 20% NaF, 3% AlF₃, 3% LaF₃, 1% SmF₃, 1% BaF₂, 19% BaCl₂ (molar percentages). Prior to DSC and PL measurements, some of the glasses have been heat treated (annealed at an elevated temperature) under different conditions, which has resulted in glass-ceramics containing BaCl₂ nanocrystals with a hexagonal and/or orthorhombic crystal structure, depending on the heat treatment conditions. Hexagonal nanocrystals may be obtained by a simple one step annealing process while the formation of orthorhombic crystallites requires sequential multistep annealing treatments. Long duration, low temperature annealing, required for the formation of orthorhombic BaCl₂ nanocrystals, leads to the appearance of an endothermic enthalpy peak at around 250 °C on the conventional DSC thermogram. Temperature modulated DSC experiments identify a clear glass transformation in this regions; and the endothermic peak has been attributed to the structural relaxation enthalpy in the host glass which is usually obscured by the thermal effects associated with the formation of BaCl₂ nanocrystals. The observed thermodynamic effects correlate with the suppression of the broad PL band around 900 nm, which is most likely due to Sm²⁺ ions near or in the “shell-region” of the glass surrounding the nanocrystals.     

The effect of B2O3 on the luminescent properties of Eu ion-doped aluminoborosilicate glasses

A series of Eu ion-doped aluminoborosilicate glasses was prepared by melt-quenching method and characterized by spectroscopic techniques, including Fourier transform infrared (FTIR), absorption, photoluminescence (PL), and electron paramagnetic resonance (EPR). The FTIR spectra showed that various glass structures formed when Al₂O₃ was partially replaced by B₂O₃. The PL characterization revealed that the emission intensity of Eu²⁺ ions firstly increased and then decreased with an increasing amount of Al₂O₃ replaced by B₂O₃. Meanwhile, the emission intensity ratio of [Eu²⁺]/[Eu³⁺] also followed the same trend. The EPR spectra confirmed the concentration variation of Eu²⁺ ions in the glass samples, which agreed well with the PL results. The possible mechanism of the effect of the glass network structure on the reduction behavior of Eu ions is discussed.     

Raman investigation of ZnO and Zn1−xMnxO nanocrystals synthesized by precipitation method

Zn_1?xMn_xO nanocrystal samples have been successfully synthesized using the chemical precipitation method in aqueous solution. Comparing with pure ZnO NC, the Raman data recorded from the manganese-doped nanocrystals shows an enhancement of the peaks located at 334 and 439 cm^?1. Besides, a new feature at 659 cm^?1 emerges. X-ray diffraction (XRD) of the as-precipitated nanocrystal samples illustrates that Mn-doping only makes the XRD peaks of the as-precipitated Mn-doped nanocrystals shift towards lower angle values, but the crystal structure of bulk ZnO is still preserved in the Mn-doped samples. Hence, the high quality Zn_1?xMn_xO (x ? 0) nanocrystals are formed through the replacement of zinc ions by manganese ions.     

Porous silicon grains in SiO2 matrix: Ultrafast photoluminescence and optical gain

We search for the presence of stimulated emission in samples of porous silicon embedded in the sol–gel derived SiO₂ matrix. By modifying the etching conditions of the porous silicon using hydrogen peroxide, we decrease substantially the nanocrystal size and produce a significant blue shift of the PL emission. Femtosecond variable-stripe length experiments combined with the shifting-excited spot technique demonstrates positive optical gain (modal gain ∼25 cm⁻¹) in the range 550–730 nm. Ultrafast photoluminescence dynamics indicates the origin of the stimulated emission as possibly due to recombination of excitonic states inside silicon nanocrystals.     

Photoluminescence of Si nanocrystallites in different types of matrices

This paper presents the comparative investigation of photoluminescence (PL) and its temperature dependence for rf-magnetron co-sputtered Si-enriched SiO_x systems and amorphous Si films prepared by hot-wire CVD method with Si nanocrystallites of different sizes. It is shown that PL spectra of Si–SiO_x films consist of the five PL bands peaked at 1.30, 1.50, 1.76, 2.05 and 2.32 eV. Amorphous Si films with Si nanocrystallites are characterized by three PL bands only peaked at 1.35, 1.50 and 1.76 eV. The peak position of the 1.50 eV PL band shifts with the change of Si quantum dot sizes and it is attributed to exciton recombination inside of Si quantum dots. The nature of four other PL bands is discussed as well.     

ZnS-CdS核壳纳米微晶的制备与光学特性

采用微乳液法制备了核壳结构ZnS/CdS纳米微晶.以XRD、TEM表征其结构、粒度和形貌,UV、PL表征其光学性能.制得的纳米微晶近似呈球形,粒径4～5nm.研究了不同CdS壳层厚度的ZnS/CdS纳米微晶的光学性能,PL谱表明壳层CdS的修饰可减少ZnS的表面缺陷,表面态发射和非辐射跃迁减少,带边直接复合发光的几率增大,发光效率大大提高;在壳层CdS达到一定厚度时,PL谱却表现为CdS的特征发射,同时发现核心ZnS对壳层CdS的发光具有增强作用,提出了ZnS/CdS发光机理的能带模型.     

Relationship between morphology and structure of shape‐controlled CeO2 nanocrystals synthesized by microwave‐assisted hydrothermal method

The influence of synthesis conditions on morphology and structure of CeO₂ nanocrystals prepared by microwave‐assisted hydrothermal method were studied by XRD, TEM, Raman spectroscopy and photoluminescence measurements. Decisive effect of the OH^‐/Ce³⁺ molar ratio in the reaction mixture on the size and shape of CeO₂ nanocrystals was established and explained. Rise of the concentration of OH^‐ groups at the surface of growing CeO₂ nanocrystals promotes shape transformation from irregular (spheroidal) to cube and enables oriented attachment mode of particle growth. I was found that the unit cell parameter and intensity of Ce³⁺ defect related band in the luminescence and Raman spectra in ceria nanoparticles increase as follows: irregular shape nanocrystals < large cube < small primary cube shape particles. The reason is growing contribution of total subsurface volume under {100} faces, exposed by ceria nanocubes, where enhanced concentration of Ce³⁺ and oxygen vacancies occur.     

Microwave‐assistant route to hybrid semiconductor nanocrystals with quasi solution‐solid‐solid mechanism

A facile microwave‐assistant route was developed for the synthesis of hybrid nanocrystals. Colloidal hybrid nanocrystals, Ag₂S‐CdS, were prepared by using Ag₂S nanocrystals and cadmium diethyldithiocarbamate as raw materials under microwave irradiation. The fast ion conductor, Ag₂S nanocrystal, catalyzes the growth of CdS nano‐building blocks through a quasi solution‐solid‐solid mechanism. The ultraviolet‐visible absorption and photoluminescence spectra of the Ag₂S‐CdS hybrid nanocrystals were investigated. One of the main advantages for this synthesis is the efficiency of dramatically reducing overall processing time. This report provides a new route for the growth of semiconductor hybrid nanocrystals based on Ag₂S and may be extended to the preparation of other hybrid colloidal nanostructures.     

Thermal treatment-dependent chemical composition of ternary CdS1−xSex nanocrystals grown in borosilicate glass

Variation of the chemical composition of ternary CdS_1−xSe_x nanocrystals grown in borosilicate glass depending on the thermal treatment is studied by resonant Raman spectroscopy. It is shown that only for the nanocrystals with roughly equal content of substitutive S and Se chalcogen atoms (0.4<x<0.6) the nanocrystal composition is independent of the thermal treatment parameters. In other cases an increase of the thermal treatment temperature (625–700 °C) and duration (2–12 h) results in a considerable increase of the predominant chalcogen content in the nanocrystals.     

Photoluminescence in silicon rich oxide thin films under different thermal treatments

Photoluminescence (PL) was studied in silicon rich oxide (with the atomic percentage ranges of Si from 35% to 75%) thin film samples, fabricated by the plasma assisted CVD technique. A broad PL peak, blue-shifted from the bulk silicon band edge of ～1.1 eV, was observed. In one typical sample, the PL peak intensity shows a non-monotonic temperature dependence. This non-monotonic dependence was also observed in previous work by others and attributed to an energy splitting between the excitonic singlet and triplet levels in silicon nanocrystals, a consequence of quantum confinement effect. Finally, in more than 20 samples under different thermal treatments (with the annealing temperature range from 800 °C to 1100 °C), the wavelength of PL peak was observed to be pinned between ～900 and ～1000 nm, independent of thermal budget. This pinning effect, we believe, is probably due to the formation of oxygen-related interface states.     

Nanocrystallization mechanisms of Al-rich glass-forming alloys

The partial devitrification of Al₈₈Y₇Fe₅ upon controlled thermal treatments results in a microstructure consisting of fine dispersions of Al-nanocrystals (>10²¹ m^?3) in a residual Al–Y–Fe matrix. These nanostructures offer improved performance and exceptional properties. While the origin of the nanocrystals is still uncertain, experiments coupled with kinetics analyses indicate that the nanocrystals originate from quenched-in nuclei. In this respect, the increase of the nanocrystal number density requires the control of the nucleation site density in the molten material. For this purpose, Al–Y–Fe glasses containing 1 at.% Pb or 1 at.% In, respectively, have been produced by rapid melt quenching. Calorimetry experiments show for both alloys a decreased onset temperature of the primary crystallization reaction compared to Al₈₈Y₇Fe₅. While possible mechanisms have been proposed, careful microstructure analyses by TEM of the as-spun and the thermally-treated In-containing sample give new evidence that the inclusions generate a modification of the local structural arrangements of the amorphous matrix by promoting the retention of precursor nuclei during rapid quenching.     

Structural and magnetic properties of ZnO and Zn1−xMnxO nanocrystals

Chemical precipitation of metal-ions from aqueous solution has been successfully used to produce Zn_1?xMn_xO nanocrystals, in the form of nano-powder. X-ray diffraction (XRD) measurements reveal that the as-prepared samples are single-phase materials and their lattice constant changes with the variation of Mn-concentration, which indicates the incorporation of Mn²⁺ into the hosting ZnO. These findings are corroborated by the observation of the well defined six hyperfine lines of Mn²⁺ ion in the electron paramagnetic resonance (EPR) spectra of the samples with a low Mn-concentration, and of a broad EPR line, which manifests the onset of Mn–Mn exchange interaction, in the samples with an elevated value of x.     

GaN-based nitride semiconductor films deposited on nitrified HfO2/Si substrate by molecular beam epitaxy

Nitrified HfO₂/Si substrate was used to grow GaN-based film with molecular beam epitaxy. Four-period InGaN/GaN layered structure and p/n junction were deposited on the nitrified HfO₂/Si. X-ray photoelectron spectroscopy (XPS) result shows that N was effectively incorporated into the HfO₂. The crystallographic relationship of the GaN/HfO₂/Si is GaN(0 0 0 2)∥HfO₂(1 1 1)∥Si(1 1 1). Temperature-dependent photoluminescence (PL), PL peak wavelength, PL peak intensity, and PL full-width at half-maximum of the p/n junction were investigated. Light-emitting diode was fabricated from the p/n junction. Red light was emitted at low voltage and yellow light was emitted when increasing the voltage.     

Formation mechanisms of tripod and tetrapod CdTe0.67Se0.33 nanocrystals

CdTe_0.67Se_0.33 nanocrystals were synthesized using a typical organic route. Two major morphologies are observed from transmission electron microscopy (TEM) images, one being a tripod, and the other being a tripod‐like with a black dot in the center of the nanocrystal. The nanocrystals have two distinct geometrical shapes, one being a tripod, and the other being a tetrapod. High‐resolution TEM (HRTEM) examinations show that the tetrapod nanocrystals consist of a zinc‐blende nucleus and four wurtzite arms connected through a common facet, whereas the tripod nanocrystals result from the coalescence of three zinc‐blende nanorods. These results are helpful to interpret the growth process of other II–VI semiconductor NCs.