AC conductivity and dielectric relaxation in Ba(Sm1/2Nb1/2)O3 ceramic

The complex perovskite oxide a barium samarium niobate (BSN) synthesized by solid-state reaction technique has single phase with cubic structure. The scanning electron micrograph of the sample shows the average grain size of BSN∼1.22 μm. The field dependence of dielectric response and loss tangent were measured in the temperature range from 323 to 463 K and in the frequency range from 50 Hz to 1 MHz. The complex plane impedance plots show the grain boundary contribution for higher value of dielectric constant in the low frequency region. An analysis of the dielectric constant (ε′) and loss tangent (tan δ) with frequency was performed assuming a distribution of relaxation times as confirmed by the scaling behaviour of electric modulus spectra. The low frequency dielectric dispersion corresponds to DC conductivity. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with an activation energy of 0.71 eV. The frequency dependence of electrical data is also analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behaviour of imaginary part of electric modulus M″ and dielectric loss spectra suggest that the relaxation describes the same mechanism at various temperatures in BSN. All the observations indicate the polydispersive relaxation in BSN.     

The impedance spectroscopic study and dielectric relaxation in A(Ni1/3Ta2/3)O3 [A=Ba,Ca and Sr]

We present the results of impedance spectroscopic study with its analytical interpretations in the framework of electric modulus formalism for Barium Nickel Tantalate Ba(Ni_1/3Ta_2/3)O₃ (BNT), Calcium Nickel Tantalate Ca(Ni_1/3Ta_2/3)O₃ (CNT) and Strontium Nickel Tantalate Sr(Ni_1/3Ta_2/3)O₃ (SNT) synthesized by the solid-state reaction technique. The results of powder X-ray diffraction study reveal that BNT and SNT crystallize in cubic structure with lattice parameter a=4.07 Å and 3.98 Å respectively, whereas CNT crystallizes in monoclinic structure having lattice parameters, a=5.71 Å, b=13.45 Å and c=5.47 Å with β=118.3°. The logarithmic angular frequency dependence of the real part of complex dielectric permittivity and loss tangent as a function of temperature indicate significant dielectric relaxation in the samples, which have been explained by the Debye theory. The frequency dependence of the loss peak and the imaginary part of electrical modulus are found to obey the Arrhenius law. The relaxation mechanism of these samples is modeled by the Cole–Cole equation. This confirms that the polarization mechanism in BNT, CNT and SNT is due to the bulk effect arising in semiconductive grains. The scaling behavior of imaginary part of electric modulus M″ suggests that the relaxation describes the same mechanism at various temperatures but relaxation frequency is strongly temperature dependent. The normalized peak positions of tan δ/tan δ_m and M″/M″_m versus log ω for BNT, CNT and SNT do not overlap completely and are very close to each other. These indicate the presence of both long-range and localized relaxation. Due to their high dielectric constant and low loss tangent, these materials may find several technological applications such as in capacitors, resonators, filters and integrated circuits.     

Dielectric relaxation and ac conductivity of double perovskite oxide Ho2ZnZrO6

Double perovskite oxide holmium zinc zirconate Ho₂ZnZrO₆ (HZZ) is synthesized by solid state reaction technique under a calcination temperature of 1100 °C. The crystal structure has been determined by powder X-ray diffraction, which shows monoclinic phase at room temperature. The variation of dielectric constant (ε′) and loss tangent (tan δ) with frequency is carried out assuming a distribution of relaxation times. The frequency corresponding to loss tangent peak is found to obey an Arrhenius law with activation energy of 89.7 meV. The frequency-dependant electrical data are analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behaviour of imaginary electric modulus shows the temperature-independent nature of the distribution of relaxation times. Nyquist plots are drawn to identify an equivalent circuit and to know the bulk and interface contributions.     

Synthesis, crystal structure, dielectric and optical properties of a new rare earth double perovskite: Ca2CeNbO6

In order to develope and understand the phenomena involved in producing advanced materials, a rare earth double perovskite oxide calcium cerium niobate, Ca₂CeNbO₆ (CCN) is synthesized for the first time. The x-ray diffraction pattern of CCN at room temperature (300K) shows orthorhombic perovskite structure, with the lattice parameters, a=9.36Å, b=6.61Å and c=5.88Å and α=β=γ= 90°. A scanning electron micrograph shows the formation of grains with average size ∼2μm. Impedance spectroscopy and Fourier transform infrared spectroscopy are applied to investigate the dielectric and optical properties of CCN. The frequency-dependent electrical data are analyzed in the framework of the conductivity and modulus formalisms. The experimental data of real part of dielectric permittivity (ε′) and imaginary part of electric modulus (M″) are fitted with Davidson-Cole equation to explore the idea of dielectric relaxation (conduction) mechanism in CCN. The frequency-dependent conductivity spectra follow a power law. The scaling behaviour of imaginary electric modulus (M″) suggests that the relaxation describes the same mechanism at various temperatures.     

Study of (Bi2O3)(BaxMo1−xO3) polycrystalline ceramic as relaxor ferroelectric

Solid solutions of bismuth layered (Bi₂O₃)(Ba_xMo_1−xO₃) (0.2≤x≤0.8, x is in step of 0.2) ceramics were prepared by conventional solid-state reaction of the constitutive oxides at optimized temperatures with a view to study its electrical properties. Powder X-ray diffraction has been employed for physical characterization and an average grain size of ∼16 to 22 nm was obtained. XRD study reveals the single phase structure of the samples. Dielectric properties such as dielectric constant (ε′), dielectric loss (tanδ) and ac electrical conductivity (σ_ac) of the prepared ceramics sintered at various temperatures in the frequency range 10¹–10⁷ Hz have been studied. A strong dispersion observed in the dielectric properties shows the relaxor type behavior of the ceramic. The presence of maxima in the dielectric permittivity spectra indicates the ferroelectric behavior of the samples. Impedance plots (Cole–Cole plots) at different frequencies and temperatures were used to analyze the electric behavior. The value of grain resistance increases with the increase in Ba ion concentration. The conductivity mechanism shows a frequency dependence, which can be ascribed to the space charge mainly due to the oxygen vacancies. The relaxation observed for the M″ (ω) or Z″ (ω) curves is correlated to both localized and long range conduction. A single ‘master curve’ for the normalized plots of all the modulus isotherms observed for a given composition indicates that the conductivity relaxation is temperature independent.     

Structural and ac electrical properties of a newly synthesized single phase rare earth double perovskite oxide: Ba2CeNbO6

A single phase rare earth double perovskite oxide Ba₂CeNbO₆ (BCN) is synthesized by solid-state reaction technique for the first time. The X-ray diffraction pattern of the sample at room temperature shows monoclinic structure, with the lattice parameters, a=5.9763 Å, b=5.975 Å and c=8.48 Å and β=90.04°. Impedance spectroscopy is used to study the ac electrical behavior of this material as a function of frequency (10²-10⁶ Hz) at various temperatures (30-450 °C). A relaxation is observed in the entire temperature range. Conduction mechanism is investigated by fitting the complex impedance data to Cole-Cole equation. Complex impedance plane plots show only one semicircular arc, indicating only the grain contribution of dielectric relaxation. The scaling behavior of imaginary part of electric modulus (M″) and imaginary part of electrical impedance (Z″) suggests that the relaxation describes the same mechanism at various temperatures. The frequency dependence of conductivity is interpreted in terms of the jump relaxation model and is fitted to Jonscher's power law. The values of dc conductivities extracted from the Jonscher power law varies from 2.79×10⁻⁷ to 3.5×10⁻⁵ Sm⁻¹ with the increase in temperature from 100 to 450 °C. The activation energies (0.37 eV) extracted from M″(ω) and Z″(ω) peaks are found to follow the Arrhenius law.     

Impedance spectroscopy study and ground state electronic properties of In(Mg1/2Ti1/2)O3

The complex perovskite oxide In(Mg_1/2Ti_1/2)O₃ (IMT) is synthesized by a solid state reaction technique. The X-ray diffraction of the sample at 30 °C shows a monoclinic phase. The dielectric properties of the sample are investigated in the temperature range from 143 to 373 K and in the frequency range from 580 Hz to 1 MHz using impedance spectroscopy. An analysis of the dielectric constant ε′ and loss tangent (tan δ) with frequency is performed assuming a distribution of relaxation times. The Cole-Cole model is used to explain the relaxation mechanism in IMT. The scaling behavior of imaginary part of electric modulus (M″) shows that the relaxation describes the same mechanism at various temperatures. The electronic structure and hence the ground state properties of IMT is studied by X-ray photoemission spectroscopy (XPS). The valence band XPS spectrum is compared with the electronic structure calculation. The electronic structure calculation indicates that the In-5s orbital introduces a significant density of states at the Fermi level, which is responsible for a high value of conductivity in IMT.     

Electrical conductivity and complex electric modulus of titanium doped nickel-zinc ferrites

The samples Ni_1+x−yZn_yTi_x Fe_2−2xO₄; y=0.1, 0.0≤x≤0.5 were prepared in a single-phase spinel structure as indicated from X-ray analysis. Electrical conductivity and dielectric measurements at different temperatures from 300 K to 600 K in the frequency range from 42 Hz to 5 MHz have been analyzed. The relation of conductivity with temperature revealed a semiconductor to semimetallic behavior as Ti⁴⁺ concentration increases. The conduction mechanism depends mainly on the valence exchange between the different metal ions in the same site or in different sites. The dielectric constant as a function of temperature and frequency showed that there is a strong dependence on the compositional parameter x. The electrical modulus has been employed to study the relaxation dynamics of charge carriers. The result indicates the presence of correlation between motions of mobile ion charges. The activation energies extracted from M′(ω) and M″(ω) peaks are found to follow the Arrhenius law. The electrical conductance of the samples found to be dependent on the temperature and frequency.     

Dielectric loss,conductivity relaxation process and magnetic properties of Mg substituted Ni–Cu ferrites

The dielectric properties, dc and ac electrical resistivities of Mg substituted Ni–Cu ferrites with general formula Ni_0.5Cu_0.5−xMg_xFe₂O₄ (0.0≤x≤0.5) have been investigated as a function of frequency, temperature and composition. ac resistivity of all the samples decreases with increase in the frequency exhibiting normal ferrimagnetic behavior. The frequency dependence of dielectric loss tangent showed a maximum in between 10 Hz and 1 kHz in all the ferrites. The conductivity relaxation of the charge carriers was examined using the electrical modulus formulism, and the results indicate the presence of the non-Debye type of relaxation in the prepared ferrites. Similar values of activation energies for dc conduction and for conductivity relaxation reveal that the mechanism of electrical conduction and dielectric polarization is the same in these ferrites. A single ‘master curve’ for normalized plots of all the modulus isotherms observed for a given composition indicates that the distribution of relaxation time is temperature independent. The saturation magnetization and coercivity as calculated from the hysteresis loop measurement show striking dependence on composition.     

Probing the microstructure of cement mortars through dielectric parameters’ variation

The present work deals with the electrical properties of typical cement mortars during the hardening process, cured at low relative humidity. Measurements were made by using dielectric spectroscopy (DS) over a broad frequency range of 10 Hz–1 MHz and isothermal depolarization current (IDC) techniques, for several weeks after sample preparation. This work presents a coherent study of the various formalisms employed in dielectric spectroscopy. Each of these formalisms contributes to the development of the complete relaxation mechanisms that are responsible for the frequency spectrum. After the first week of hardening, when the DC conductivity effects were absent, two distinct dielectric relaxation mechanisms were observed in the frequency spectrum of the complex permittivity ε* and tan δ functions. The mechanism positioned at low-frequency region (few kHz) is observed for the first time, as we know from the literature, on cement mortars. The relaxation times of both mechanisms were found to increase gradually, while the strength of the relaxation mechanisms varied also as a function of the hardening time. Fitting analysis in complex impedance Z* and electric modulus M* formalisms revealed also the existence of two short-range relaxation mechanisms of conductivity. We suggest that the low-frequency relaxation is related to the closed capillary pores and the high-frequency relaxation to the C-S-H gel pores. An increase of the mean dimension, of both types of pores, estimated from our data analysis with hardening time.     

Influence of lithium potassium zirconate nanoparticles on the electrical properties and structural characteristics of poly(vinyl alcohol) films

We investigated the influence of lithium potassium zirconate (LiKZrO₃) nanoparticles on the electrical properties and structural characteristics of poly(vinyl alcohol) (PVA) films. PVA/LiKZrO₃ nanocomposite films were prepared by casting of aqueous solutions with varying LiKZrO₃ content (0.5, 1.0, and 2.0 wt.%). The dielectric constant (ε′), dielectric loss (ε″), AC conductivity (σ_ac), dielectric loss tangent (tan δ), and electric modulus (M′ and M″) of the nanocomposite films were measured over a range of frequencies at ambient temperature. The results show increases in σ_ac and M′ with frequency, whereas ε′, ε″, and tan δ decreased with increasing frequency. The films were also characterized using differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), and X-ray diffraction (XRD) techniques. DSC and XRD revealed the nature of LiKZrO₃ nanoparticle interaction with the PVA matrix. TGA analysis revealed an increase in thermal stability of the nanocomposites with increasing nanoparticle concentration. Scanning electron microscopy confirmed uniform dispersion of LiKZrO₃ nanoparticles in the PVA matrix.     

BiFeO3 ceramic matrix with Bi2O3 or PbO added: Mössbauer, Raman and dielectric spectroscopy studies

In this paper Mössbauer, Raman and dielectric spectroscopy studies of BiFeO₃ (BFO) ceramic matrix with 3 or 10 wt% of Bi₂O₃ or PbO added, obtained through a new procedure based on the solid-state method, are presented. Mössbauer spectroscopy shows the presence of a single magnetically ordered phase with a hyperfine magnetic field of 50 T. Raman spectra of BFO over the frequency range of 100-900 cm⁻¹ have been investigated, at room temperature, under the excitation of 632.8 nm wavelength in order to evaluate the effect of additives on the structure of the ceramic matrix. Detailed studies of the dielectric properties of BiFeO₃ ceramic matrix like capacitance (C), dielectric permittivity (ε) and dielectric loss (tan δ), were investigated in a wide frequency range (1 Hz-1 MHz), and in a temperature range (303-373 K). The complex impedance spectroscopy (CIS) technique, showed that these properties are strongly dependent on frequency, temperature and on the added level of impurity. The temperature coefficient of capacitance (TCC) of the samples was also evaluated. The study of the imaginary impedance (−Z″) and imaginary electric modulus (M″) as functions of frequency and temperature leads to the measurement of the activation energy (E_ac), which is directly linked to the relaxation process associated with the interfacial polarization effect in these samples.     

Dielectric properties and relaxation behavior of [TMA]2Zn0.5Cu0.5Cl4 compound

The [TMA]₂Zn_0.5Cu_0.5Cl₄ hybrid material was prepared and its dielectric spectra were measured in the 10⁻¹ Hz-10⁶ Hz frequency range and 200-305 K temperature interval. The dielectric permittivity showed a ferroelectric-paraelectric phase transition at 293 K. Double relaxation peaks are observed in the imaginary part of the electrical modulus, suggesting the presence of grain and grain boundary in the sample. The frequency dependent conductivity was interpreted in term of Jonscher's law: σ(ω)=σ_dc+Aωⁿ. The temperature dependent of the dc conductivity (σ_dc) was well described by the Arrhenius equation: σ_dcT=σ_o×exp(−E_a/kT).     

Spectroscopic investigations and electrical properties of PVA/PVP blend filled with different concentrations of nickel chloride

Films of PVA/PVP blend (50/50) filled with different concentrations of NiCl₂ were prepared by casting method. The prepared films were investigated by different techniques. XRD scans demonstrated that the peak intensity at 2θ≈20° decreased and the band width increased with increase in the concentrations of NiCl₂ content, which implied decrease in the degree of crystallization and hence causes increase in the amorphous region. UV-vis analysis revealed that the values of the optical band gap are affected with increase in NiCl₂ content. This indicates the formation of charge transfer complexes between the polymer blend and the filler. The rise of conductivity is significant with increased concentration of NiCl₂ filler; this reveals an increase in degree of amorphosity. AC conductivity (σ_ac) behavior of all the prepared films was investigated over the frequency range 42 Hz-5 MHz and under different isothermal stabilization in the temperature range 313-393 K. It suggests that the hopping mechanism might be playing an important role in the conduction process in high frequency region. The dielectric behavior was analyzed using dielectric permittivity (ε´, ε″) dielectric loss tangent (tan δ) and electric modulus (M″). The decrease in dielectric permittivity was observed with increase in the concentration of NiCl₂ filler. This suggests the role of NiCl₂ as filler to improve the electrical conductivity of PVA/PVP blend.     

Dielectric relaxation of CdSe nanoparticles

Nanoparticles of cadmium selenide (CdSe) have been synthesized by soft chemical route using mercaptoethanol as a capping agent. X-ray diffraction and transmission electron microscope measurements show that the prepared sample belongs to sphalerite structure with the average particle size of 25 nm. The band gap of the material is found to be 2.1 eV. The photoluminescence (PL) emission spectra of the sample are measured at various excitation wavelengths. The PL spectra appear in the visible region, and the emission feature depends on the wavelength of the excitation. Impedance spectroscopy is applied to investigate the dielectric relaxation of the sample in a temperature range from 323 to 473 K and in a frequency range from 42 Hz to 1.1 MHz. The complex impedance plane plot has been analyzed by an equivalent circuit consisting of two serially connected R-CPE units, each containing a resistance (R) and a constant phase element (CPE). The dielectric relaxation of the sample is investigated in the electric modulus formalism. The temperature dependent relaxation times obey the Arrhenius law. The Havriliak–Negami model is used to investigate the dielectric relaxation mechanism in the sample. The frequency dependent conductivity spectra are found to obey the power law.     

Dielectric relaxation in complex perovskite oxide BaCo1/2W1/2O3

Polycrystalline BaCo_1/2W_1/2O₃ (BCW) is prepared by the solid-state reaction technique. The X-ray diffraction study of the compound at room temperature reveals the monoclinic phase. The field dependence of the dielectric constant and the conductivity are measured in the frequency range from 50 Hz to1 MHz and in the temperature range from 300 to 413 K. An analysis of the real and imaginary parts of the dielectric permittivity with frequency is performed. The frequency-dependent maxima in the imaginary impedance are found to obey an Arrhenius law with an activation energy=0.86 eV. The frequency-dependent electrical data are also analysed in the framework of the conductivity and modulus formalisms.     

Rietveld refinement and impedance spectroscopy of calcium titanate

Single phase perovskite CaTiO₃ has been synthesized by conventional solid state reaction technique. The ceramic was characterized by XRD at room temperature and its Rietveld refinement inferred orthorhombic crystal structure with the space group Pbnm. The field dependence of dielectric relaxation and conductivity was measured over a wide frequency range from room temperature to 673 K. Analysis of Nyquist plots of CaTiO₃ revealed the contribution of many electrically active regions corresponding to bulk mechanism, distribution of grain boundaries and electrode processes. The dc conductivity depicted a semiconductor to metal type transition. Frequency dependence of dielectric constant (ε′) and tangent loss (tan δ) show a dispersive behavior at low frequencies and is explained on basis of Maxwell-Wagner model and Koop's theory. Both conductivity and electric modulus formalisms have been employed to study the relaxation dynamics of charge carriers. The variation of ac conductivity with frequency at different temperatures obeys the universal Jonscher's power law (σ_ac α ω^s). The values of exponent ‘s’ lie in the range 0.13 ≤ s ≤ 0.33, which in light of CBH model suggest a large polaron hopping type of conduction mechanism.     

Ionic conduction and dielectric relaxation in polycrystalline Na2SO4

In the present paper, the ionic conductivity and the dielectric relaxation properties of Na₂SO₄ have been investigated by means of impedance spectroscopy measurements over wide ranges of frequencies and temperatures. The frequency dependent impedance data has been modeled by appropriate equivalent circuit representing the bulk and grain boundary properties of the sample. Phase transition temperatures and the activation energies of conduction in different phases have been determined from the temperature dependence of the dc conductivity. Dielectric relaxation has been studied using the complex electric modulus and permittivity formalisms. From the electric modulus formalism it is concluded that the relaxation mechanism is independent of temperature. The dielectric permittivity spectra were analyzed by the Cole–Cole formula where different parameters are determined.     

Impedance study of polymethyl methacrylate composites/multi-walled carbon nanotubes (PMMA/MWCNTs)

The dielectric behavior of polymethyl methacrylate/multi-walled carbon nanocomposites (PMMA/MWCNTs) was investigated using impedance spectroscopy technique. The composites were prepared using melt mixing with MWCNTs loading ranging from 0.01 to 10 wt%. The experimental results showed that the measured impedance reflects the insulating behavior of the host material (PMMA) with no appreciable effects of the filler less than 8.5 wt%. However, for the sample containing 10 wt%, the calculated value of dc conductivity increases with increasing temperature from 2.0×10⁻⁶ (Ω m)⁻¹ to attain a value of 4.8×10⁻⁶ (Ω m)⁻¹ at 110 °C. The percolation threshold derived from the dielectric data was estimated to be higher than 8.5 wt% and lower than 10 wt%. A temperature dependent electrical relaxation phenomenon was only observed in the sample containing 10 wt% of MWCNTs. The frequency dependence of the ac conductivity data followed a power law.     

Dielectric spectroscopy on Bi3Zn2Sb3O14 ceramic: an approach based on the complex impedance

The dielectric properties and loss of Bi_1.5ZnSb_1.5O₇ a poor-semiconducting ceramic were investigated by impedance spectroscopy, in the frequency range from 5 Hz to 13 MHz. Electric measurements were performed from 100 to 700 °C. Pyrochlore type phase was synthesized by the polymeric precursor method. Dense ceramic with 97% of the theoretical density was prepared by sintering via constant heating rate. The dielectric permittivity dependence as a function of frequency and temperature showed a strong dispersion at frequency lower than 10 kHz. The losses exhibit slight dependence with the frequency at low temperatures presenting a strong increase at temperatures higher than 400 °C. A decrease of the loss magnitude occurs with increasing frequency. Relaxation times were extracted using the dielectric functions Z″(ω) and M″(ω). The plots of the relaxation times τ_Z′ and τ_M″ as a function of temperature follow the Arrhenius law, where a single slope is observed with activation energy values equal to 1.38 and 1.37 eV, respectively.