Polygallide RE2MGa9Ge2 (RE = Ce, Sm; M = Ni, Co) phases grown in molten gallium

The quaternary intermetallics Ce2CoGa9Ge2, Ce2NiGa9Ge2, and Sm2NiGa9Ge2 were prepared by reacting elemental metals in excess of gallium at 850 degrees C. The title compounds crystallize in the tetragonal space group P4/nmm in the Sm2Ni(Si(1-x)Ni(x))Al4Si6 structure type with cell parameters a = 5.9582(5) A, c = 15.0137(18) A, and a = 5.9082(17) A, c = 14.919(6) A, Z = 2, for Ce2CoGa9Ge2 and Sm2NiGa9Ge2, respectively. The structures are composed of covalently bonded three-dimensional networks of [CoGa9Ge2] in which the rare-earth metals fill the voids forming a 2D square net. The structures of RE2MGa9Ge2 are Ga-rich and possess extensive Ga-Ga bonding even though the Ga atoms do not form a network on their own. Magnetic susceptibility measurements for Ce2CoGa9Ge2 and Ce2NiGa9Ge2 show Curie-Weiss paramagnetism, consistent with presence of Ce(3+) ions. Magnetocrystalline anisotropy was observed for Ce2NiGa9Ge2, with the magnetically easy axis lying along the [001] crystallographic direction. A transition to an antiferromagnetic state was observed below 4 K in the easy direction of magnetization. In the magnetically hard direction of the basal plane, paramagnetic behavior was observed down to 1.8 K.     

Isolation of the new cubic phases RE4FeGa(12-x)Ge(x) (RE = Sm,Tb; x = 2.5) from molten gallium: single-crystal neutron diffraction study of the Ga/Ge distribution

The compounds RE4FeGa(12-x)Ge(x) (RE = Sm, Tb) were discovered in reactions employing molten Ga as a solvent at 850 degrees C. However, the isostructural Y4FeGa(12-x)Ge(x) was prepared from a direct combination reaction. The crystal structure is cubic with space group Imm, Z = 2, and a = 8.657(4) A and 8.5620(9) A for the Sm and Tb analogues, respectively. Structure refinement based on full-matrix least squares on F(o)2 resulted in R1 = 1.47% and wR2 = 4.13% [I > 2(I)] for RE = Sm and R1 = 2.29% and wR2 = 7.12% [I > 2(I)] for RE = Tb. The compounds crystallize in the U4Re7Si6 structure type, where the RE atoms are located on 8c (1/4, 1/4, 1/4) sites and the Fe atoms on 2a (0, 0, 0) sites. The distribution of Ga and Ge in the structure, investigated with single-crystal neutron diffraction on the Tb analogue, revealed that these atoms are disordered over the 12d (1/4, 0, 1/2) and 12e (x, 0, 0) sites. The amount of Ga/Ge occupying the 12d and 12e sites refined to 89(4)/11 and 70(4)/30%, respectively. Transport property measurements indicate that these compounds are metallic conductors. Magnetic susceptibility measurements and M?ssbauer spectroscopy performed on the Tb analogue show a nonmagnetic state for Fe, while the Tb atoms carry a magnetic moment corresponding to a mu(eff) of 9.25 mu(B).     

Structure and properties of Gd3Ge4: the orthorhombic RE3Ge4 structures revisited (RE = Y, Tb-Tm)

The new binary compound Gd(3)Ge(4) has been synthesized and its structure has been determined from single-crystal X-ray diffraction. Gd(3)Ge(4) crystallizes in the orthorhombic space group Cmcm (No. 63) with unit cell parameters a = 4.0953(11) A, b = 10.735(3) A, c = 14.335(4) A, and Z = 4. Its structure can be described as corrugated layers of germanium atoms with gadolinium atoms enclosed between them. The bonding arrangement in Gd(3)Ge(4) can also be derived from that of the known compound GdGe (CrB type) through cleavage of the (infinity)(1)[Ge(2)] zigzag chains in GdGe and a subsequent insertion of an extra germanium atom between the resulting triangular fragments. Formally, these characteristics represent isotypism with the Er(3)Ge(4) type (Pearson's oC28). However, re-examination of the crystallography in the whole RE(3)Ge(4) series (RE = Y, Tb-Tm) revealed discrepancies and called into question the accuracy of the originally determined structures. This necessitated a new rationalization of the bonding, which is provided in the context of a comparative discussion concerning both the original and revised structure models, along with an analysis of the trends across the series. The temperature dependence of the magnetic susceptibility of Gd(3)Ge(4) shows that it is paramagnetic at room temperature and undergoes antiferromagnetic ordering below 29 K. Magnetization, resistivity, and calorimetry data for several other members of the RE(3)Ge(4) family are presented as well.     

Intermetallics as zintl phases: Yb2Ga4Ge6 and RE3Ga4Ge6 (RE=Yb, Eu): structural response of a [Ga4Ge6]4- framework to reduction by two electrons

Two new intermetallic compounds, Yb(2)Ga(4)Ge(6) and Yb(3)Ga(4)Ge(6), were obtained from reactions in molten Ga. A third compound, Eu(3)Ga(4)Ge(6), was produced by direct combination of the elements. The crystal structures of these compounds were studied by single-crystal X-ray diffraction. Yb(2)Ga(4)Ge(6) crystallizes in an orthorhombic cell with a=4.1698(7), b=23.254(4), c=10.7299(18) A in the polar space group Cmc2(1). The structure of RE(3)Ga(4)Ge(6) is monoclinic, space group C2/m, with cell parameters a=23.941(6), b=4.1928(11), c=10.918(3) A, beta=91.426(4) degrees for RE=Yb, and a=24.136(2), b=4.3118(4), c=11.017(1) A, beta=91.683(2) degrees for RE=Eu. The refinement [I>2 sigma(I)] converged to the final residuals R(1)/wR(2)=0.0229/0.0589, 0.0411/0.1114, and 0.0342/0.0786 for Yb(2)Ga(4)Ge(6), Yb(3)Ga(4)Ge(6), and Eu(3)Ga(4)Ge(6), respectively. The structures of these two families of compounds can be described by a Zintl concept of bonding, in which the three-dimensional [Ga(4)Ge(6)](n-) framework serves as a host and electron sink for the electropositive RE atoms. The structural relation of RE(3)Ga(4)Ge(6) to of Yb(2)Ga(4)Ge(6) lies in a monoclinic distortion of the orthorhombic cell of Yb(2)Ga(4)Ge(6) and reduction of the [Ga(4)Ge(6)] network by two electrons per formula unit. The results of theoretical calculations of the electronic structure, electrical transport data, and thermochemical and magnetic measurements are also reported.     

Closely related rare-earth metal germanides RE2Li2Ge3 and RE3Li4Ge4 (RE = La-Nd, Sm): synthesis, crystal chemistry, and magnetic properties

Reported are the syntheses, crystal structures, and magnetic susceptibilities of two series of closely related rare-earth metal-lithium germanides RE(2)Li(2)Ge(3) and RE(3)Li(4)Ge(4) (RE = La-Nd, Sm). All title compounds have been synthesized by reactions of the corresponding elements at high temperatures, and their structures have been established by single-crystal X-ray diffraction. RE(2)Li(2)Ge(3) phases crystallize in the orthorhombic space group Cmcm (No. 63) with the Ce(2)Li(2)Ge(3) structure type, while the RE(3)Li(4)Ge(4) phases crystallize in the orthorhombic space group Immm (No. 71) with the Zr(3)Cu(4)Si(4) structure type, respectively. Both of their structures can be recognized as the intergrowths of MgAl(2)Cu- and AlB(2)-like slabs, and these traits of the crystal chemistry are discussed. Temperature-dependent direct-current magnetization measurements indicate Curie-Weiss paramagnetism in the high-temperature regime for RE(2)Li(2)Ge(3) and RE(3)Li(4)Ge(4) (RE = Ce, Pr, Nd), while Sm(2)Li(2)Ge(3) and Sm(3)Li(4)Ge(4) exhibit Van Vleck-type paramagnetism. The data are consistent with the local-moment magnetism expected for RE(3+) ground states. At temperatures below ca. 20 K, magnetic ordering transitions have been observed. The experimental results have been complemented by tight-binding linear muffin-tin orbital electronic-band-structure calculations.     

Gd5-xYxTt4 (Tt = Si or Ge): effect of metal substitution on structure, bonding, and magnetism

A crystallographic study and theoretical assessment of the Gd/Y site preferences in the Gd 5- x Y x Tt 4 ( Tt = Si, Ge) series prepared by high-temperature methods is presented. All structures for the Gd 5- x Y x Si 4 system belong to the orthorhombic, Gd 5Si 4-type (space group Pnma). For the Gd 5- x Y x Ge 4 system, phases with x < 3.6 and x >or= 4.4 adopt the orthorhombic, Sm 5Ge 4-type structure. For the composition range of 3.6 相似文献   

Layered rare-earth gallium antimonides REGaSb(2) (RE = La--Nd, Sm).

The ternary rare-earth gallium antimonides, REGaSb(2) (RE = La--Nd, Sm), have been synthesized through reaction of the elements. The structures of SmGaSb(2) (orthorhombic, space group D(5)(2)-C222(1), Z = 4, a = 4.3087(5) A, b = 22.093(4) A, c = 4.3319(4) A) and NdGaSb(2) (tetragonal, space group D(19)(4h)-I4(1)/amd, Z = 8, a = 4.3486(3) A, c = 44.579(8) A) have been determined by single-crystal X-ray diffraction. The SmGaSb(2)-type structure is adopted for RE = La and Sm, whereas the NdGaSb(2)-type structure is adopted for RE = Ce--Nd. The layered SmGaSb(2) and NdGaSb(2) structures are stacking variants of each other. In both structures, two-dimensional layers of composition (2)(infinity)[GaSb] are separated from square nets of Sb atoms [Sb] by RE atoms. Alternatively, the structures may be considered as resulting from the insertion of zigzag Ga chains between (2)(infinity)[RE Sb(2)] slabs. In SmGaSb(2), all of the Ga chains are parallel and the (2)(infinity)[SmSb(2)] layers are stacked in a ZrSi(2)-type arrangement. In NdGaSb(2), the Ga chains alternate in direction, resulting in a doubling of the long axis relative to SmGaSb(2), and the (2)(infinity)[NdSb(2)] layers are stacked in a Zr(3)Al(4)Si(5)-type arrangement. Extended Hückel band structure calculations are used to explain the bonding in the [GaSb(2)](3-) substructure.     

RE2MAl6Si4 (RE = Gd, Tb, Dy; M = Au, Pt): layered quaternary intermetallics featuring CaAl2Si2-type and YNiAl4Ge2-type slabs grown from aluminum flux

Six new intermetallic aluminum silicides--Gd(2)PtAl(6)Si(4), Gd(2)AuAl(6)Si(4), Tb(2)PtAl(6)Si(4), Tb(2)AuAl(6)Si(4), Dy(2)PtAl(6)Si(4), and Dy(2)AuAl(6)Si(4)--have been obtained from reactions carried out in aluminum flux. The structure of these compounds was determined by single-crystal X-ray diffraction. They form in space group Rthremacr;m with cell constants of a = 4.1623(3) A and c = 51.048(5) A for the Gd(2)PtAl(6)Si(4) compound. The crystal structure is comprised of hexagonal nets of rare earth atoms alternating with two kinds of layers that have been observed in other multinary aluminide intermetallic compounds (CaAl(2)Si(2) and YNiAl(4)Ge(2)). All six RE(2)MAl(6)Si(4) compounds show antiferromagnetic transitions at low temperatures (T(N) < 20 K); magnetization studies of the Dy compounds show metamagnetic behavior with reorientation of spins at 6000 G. Band structure calculations indicate that the AlSi puckered hexagonal sheets in this structure are electronically distinct from the other surrounding structural motifs.     

Synthesis, crystal chemistry, and magnetic properties of RE7Li8Ge10 and RE11Li12Ge16 (RE = La-Nd, Sm): new members of the [REGe2](n)[RELi2Ge](m) homologous series

Eight new rare-earth metal-lithium-germanides belonging to the [REGe(2)](n)[RELi(2)Ge](m) homologous series have been synthesized and structurally characterized by single-crystal X-ray diffraction. The structures of the title compounds can be rationalized as linear intergrowths of imaginary RELi(2)Ge (MgAl(2)Cu structure type) and REGe(2) (AlB(2) structure type) slabs. The compounds with general formula RE(7)Li(8)Ge(10) (RE = La-Nd, Sm), i.e., [REGe(2)](3)[RELi(2)Ge](4), crystallize in the orthorhombic space group Cmmm (No. 65) with a new structure type. Similarly, the compounds with general formula RE(11)Li(12)Ge(16) (RE = Ce-Nd), i.e., [REGe(2)](5)[RELi(2)Ge](6), crystallize in the orthorhombic space group Immm (No. 71) also with its own structure type. Temperature-dependent DC magnetization measurements indicate Curie-Weiss paramagnetism in the high-temperature regime and hint at complex magnetic ordering at low temperatures. The measured effective moments are consistent with RE(3+) ground states in all cases. The experimental results have been complemented by tight-binding linear muffin-tin orbital (TB-LMTO) electronic structure calculations.     

Ternary rare-earth arsenides REZn3As3 (RE = La-Nd, Sm) and RECd3As3 (RE = La-Pr)

Ternary rare-earth zinc arsenides REZn(3)As(3) (RE = La-Nd, Sm) with polymorphic modifications different from the previously known defect CaAl(2)Si(2)-type forms, and the corresponding rare-earth cadmium arsenides RECd(3)As(3) (RE = La-Pr), have been prepared by reaction of the elements at 800 °C. LaZn(3)As(3) adopts a new orthorhombic structure type (Pearson symbol oP28, space group Pnma, Z = 4, a = 12.5935(8) ?, b = 4.1054(3) ?, c = 11.5968(7) ?) in which ZnAs(4) tetrahedra share edges to form ribbons that are fragments of other layered arsenide structures; these ribbons are then interconnected in a three-dimensional framework with large channels aligned parallel to the b direction that are occupied by La(3+) cations. All remaining compounds adopt the hexagonal ScAl(3)C(3)-type structure (Pearson symbol hP14, space group P6(3)/mmc, Z = 2; a = 4.1772(7)-4.1501(2) ?, c = 20.477(3)-20.357(1) ? for REZn(3)As(3) (RE = Ce, Pr, Nd, Sm); a = 4.4190(3)-4.3923(2) ?, c = 21.4407(13)-21.3004(8) ? for RECd(3)As(3) (RE = La-Pr)) in which [M(3)As(3)](3-) layers (M = Zn, Cd), formed by a triple stacking of nets of close-packed As atoms with M atoms occupying tetrahedral and trigonal planar sites, are separated by La(3+) cations. Electrical resistivity measurements and band structure calculations revealed that orthorhombic LaZn(3)As(3) is a narrow band gap semiconductor.     

Anomalous thermal expansion in the square-net compounds RE4TGe8 (RE = Yb, Gd; T = Cr-Ni, Ag)

The family of materials RE(4)TGe(8) (RE = Yb, Gd; T = transition metal) exhibits directional zero thermal expansion (ZTE) via a process that is associated with the linking of planar square nets in the third dimension. The Ge square nets in these compounds exhibit commensurate long-range modulations similar to those observed in charge-density-wave compounds. The ZTE is manifested in the plane of the square nets from 10 to 300 K with negligible volume expansion below ～160 K. The specific atomic arrangement in RE(4)TGe(8) enables a Poisson-like mechanism that allows the structure to contract along one direction as it expands only slightly in the perpendicular direction.     

Ternary rare-earth titanium antimonides RE2Ti(11-x)Sb(14+x) (RE = Sm, Gd, Tb, Yb)

The isostructural rare-earth titanium antimonides RE 2Ti 11 - x Sb 14 + x ( RE = Sm, Gd, Tb, Yb) have been synthesized by arc-melting reactions of the elements. Single-crystal X-ray diffraction revealed that they adopt a new structure type (Pearson symbol oP54, space group Pnma, Z = 2; a = 15.8865(6)-15.9529(9) A, b = 5.7164(2)-5.7135(3) A, c = 12.9244(5)-12.9442(7) A for RE = Sm-Yb). The structure consists of titanium-centered octahedra (CN6) and pentagonal bipyramids (CN7) connected to form a 3D framework whose cavities are filled with RE atoms. 1D linear skewers of titanium atoms, within face-sharing octahedral chains, and similar skewers of antimony atoms, associated with the titanium-centered pentagonal bipyramids, extend along the b direction. On proceeding from Sm 2Ti 11Sb 14 to Tb 2Ti 10.41(1)Sb 14.59(1) and Yb 2Ti 10.58(1)Sb 14.42(1), antimony atoms are disordered within some of the titanium sites. Resistivity measurements on the samarium and ytterbium members indicated metallic behavior.     

Cubic aluminum silicides RE8Ru12Al49Si9(Al(x)Si12-x) (RE = Pr, Sm) from liquid aluminum. Empty (Si,Al)12 cuboctahedral clusters and assignment of the Al/Si distribution with neutron diffraction.

Two new quaternary aluminum silicides, RE8Ru12Al49Si9(Al(x)Si12-x) (x approximately 4; RE = Pr, Sm), have been synthesized from Sm (or Sm2O3), Pr, Ru, and Si in molten aluminum between 800 and 1000 degrees C in sealed fused silica tubes. Both compounds form black shiny crystals that are stable in air and NaOH. The Nd analog is also stable. The compounds crystallize in a new structural type. The structure, determined by single-crystal X-ray diffraction, is cubic, space group Pm3m with Z = 1, and has lattice parameters of a = 11.510(1) A for Sm8Ru12Al49Si9(Al(x)Si12-x) and a = 11.553(2) A for Pr8Ru12Al49Si9(Al(x)Si12-x) (x approximately 4). The structure consists of octahedral units of AlSi6, at the cell center, Si2Ru4Al8 clusters, at each face center, SiAl8 cubes, at the middle of the cell edges, and unique (Al,Si)12 cuboctohedral clusters, at the cell corners. These different structural units are connected to each other either by shared atoms, Al-Al bonds, or Al-Ru bonds. The rare earth metal atoms fill the space between various structural units. The Al/Si distribution was verified by single-crystal neutron diffraction studies conducted on Pr8Ru12Al49Si9(Al(x)Si12-x). Sm8Ru12Al49Si9(Al(x)Si12-x) and Pr8Ru12Al49Si9(Al(x)Si12-x) show ferromagnetic ordering at Tc approximately 10 and approximately 20 K, respectively. A charge of 3+ can be assigned to the rare earth atoms while the Ru atoms are diamagnetic.     

Ternary rare-earth manganese bismuthides: structures and physical properties of RE(3)MnBi(5) (RE = La-Nd) and Sm(2)Mn(3)Bi(6)

Investigations in the ternary RE-Mn-Bi systems where RE is an early rare earth element have revealed the existence of the polybismuthides RE3MnBi5 (RE = La-Nd), previously known only for the Ce member, and the new compound Sm2Mn3Bi6. Their structures were determined from single-crystal X-ray diffraction data. The RE3MnBi5 compounds adopt the hexagonal inverse Hf5Cu3Sn-type structure (Pearson symbol hP18, space group P63/mcm, a = 9.7139(11)-9.5438(16) A, c = 6.4883(7)-6.4089(11) A for RE = La-Nd), containing chains of face-sharing Mn-centered octahedra. Sm2Mn3Bi6 adopts a new monoclinic structure type (Pearson symbol mP22, space group P21/m, a = 10.3917(8) A, b = 4.4557(3) A, c = 13.2793(10) A, beta = 108.0100(10) degrees ) in which the Mn centers are coordinated by Bi atoms in diverse geometries (distorted octahedral, trigonal bipyramidal, and distorted tetrahedral (seesaw)) and participate in extensive metal-metal bonding in the form of chains of Mn3 clusters. Homoatomic bonding interactions involving nominally anionic Bi atoms are manifested as one-dimensional Bi chains in RE3MnBi5 and as four-atom-wide Bi ribbons in Sm2Mn3Bi6. Electrical resistivity measurements on single crystals revealed metallic behavior with prominent transitions near 40 K for RE3MnBi5 and 50 K for Sm2Mn3Bi6. Magnetic susceptibility measurements showed that Pr3MnBi5 undergoes magnetic ordering near 25 K.     

Synthesis,crystal structures and chemical bonding of RE5−xLixGe4 (RE = Nd,Sm and Gd; x≃ 1) with the orthorhombic Gd5Si4 type

The syntheses and single‐crystal and electronic structures of three new ternary lithium rare earth germanides, RE_5−xLi_xGe₄ (RE = Nd, Sm and Gd; x≃ 1), namely tetrasamarium lithium tetragermanide (Sm_3.97Li_1.03Ge₄), tetraneodymium lithium tetragermanide (Nd_3.97Li_1.03Ge₄) and tetragadolinium lithium tetragermanide (Gd_3.96Li_1.03Ge₄), are reported. All three compounds crystallize in the orthorhombic space group Pnma and adopt the Gd₅Si₄ structure type (Pearson code oP36). There are six atoms in the asymmetric unit: Li1 in Wyckoff site 4c, RE1 in 8d, RE2 in 8d, Ge1 in 8d, Ge2 in 4c and Ge3 in 4c. One of the RE sites, i.e. RE2, is statistically occupied by RE and Li atoms, accounting for the small deviation from ideal RE₄LiGe₄ stoichiometry.     

Phase transformation driven by valence electron concentration: tuning interslab bond distances in Gd5GaxGe4-x

X-ray single crystal and powder diffraction studies on the Gd(5)Ga(x)()Ge(4)(-)(x)() system with 0 < or = x < or = 2.2 reveal dependence of interslab T-T dimer distances and crystal structures themselves on valence electron concentration (T is a mixture of Ga and Ge atoms). While the Gd(5)Ga(x)()Ge(4)(-)(x)() phases with 0 < or = x < or = 0.6 and valence electron concentration of 30.4-31 e(-)/formula crystallize with the Sm(5)Ge(4)-type structure, in which all interslab T-T dimers are broken (distances exceeding 3.4 A), the phases with 1 < or = x < or = 2.2 and valence electron concentration of 28.8-30 e-/formula adopt the Pu(5)Rh(4)- or Gd(5)Si(4)-type structures with T-T dimers between the slabs. An orthorhombic Pu(5)Rh(4)-type structure, which is intermediate between the Gd(5)Si(4)- and Sm(5)Ge(4)-type structures, has been identified for the Gd(5)GaGe(3) composition. Tight-binding linear-muffin-tin-orbital calculations show that substitution of three-valent Ga by four-valent Ge leads to larger population of the antibonding states within the dimers and, thus, to dimer stretching and eventually to dimer cleavage.     

New layered germanide halides RE2GeX2 (RE = Y, Gd; X = Br, I)

The title compounds were synthesized from RE, REX3, and Ge under an Ar atmosphere at 1200-1370 K. Y2GeI2 and Gd2GeI2 crystallize in space group Rm with lattice constants a = 4.2135(3) and 4.2527(1) A and c = 31.480(2) and 31.657(1) A, respectively. Gd2GeBr2 crystallizes in two modifications, the 1T-type (space group Pm1; a = 4.1668(2) A, c = 9.8173(6) A) and the 3R-type (space group Rm; a = 4.1442(9) A, c = 29.487(7) A). The structural motifs of RE2GeX2 compounds are Ge-centered slightly distorted RE6 octahedra connected via their common edges and extending in the a and b directions. The resulting close-packed double layers are separated by halogen atoms. The electrical resistivity measurements revealed semiconductor behavior for Y2GeI2 and Gd2GeI2 and a metal-semiconductor transition for 1T-Gd2GeBr2. Magnetic susceptibility and heat capacity measurements show long-range magnetic ordering for Gd2GeI2 and 1T-Gd2GeBr2 at approximately 15 and approximately 13 K, respectively.     

Intermetallic compounds with near Zintl phase behavior: RE2Zn3Ge6 (RE = La, Ce, Pr, Nd) grown from liquid indium

A series of compounds has been discovered while investigating reactions of rare earth, transition metals, and Ge in excess indium. These compounds, RE2Zn3Ge6 (RE = La, Ce, Pr, Nd), are isostructural, crystallizing in the orthorhombic space group Cmcm with lattice parameters a = 5.9691(9) angstroms, b = 24.987(4) angstroms, and c = 5.9575(9) angstroms for La2Zn3Ge6, a = 5.9503(5) angstroms, b = 24.761(2) angstroms, and c = 5.9477(5) angstroms for the Ce analogue, a =5.938(2) angstroms, b = 24.708(8) angstroms, and c = 5.936(2) angstroms for Pr2Zn3Ge6, and a = 5.9094(7) angstroms, b = 24.619(3) angstroms, and c = 5.9063(5) angstroms for the Nd analogue. The structure is composed of PbO-like ZnGe layers and ZnGe4 cage layers and is related to the Ce4Zn8Ge(11-x) structure type. The bonding in the system can be rationalized using the Zintl concept resulting in a material that is expected to be a valence precise semiconductor, although its behavior is more consistent with it being a semimetal, making it an intermediate case. The results of band structure calculations and magnetic measurements of these compounds are discussed.     

Structure and physical properties of ternary rare-earth cobalt bismuth intermetallics (RE)12Co5Bi (RE = Y, Gd, Tb, Dy, Ho, Er, Tm)

The rare-earth intermetallic compounds (RE)12Co5Bi (RE = Y, Gd, Tb, Dy, Ho, Er, Tm) were prepared by arc-melting and annealing at 600 degrees C. These compounds extend the previously known (RE)6M2+xX1-x (M = Co, Ni; X = Ga, In, Sn, Pb) series with the Ho6Co2Ga-type structure to X = Bi. The crystal structure of Ho12Co5Bi was refined by the Rietveld method from powder X-ray diffraction data obtained using synchrotron radiation (Pearson symbol oI36, orthorhombic, space group Immm, Z = 2, a = 9.37598(14) A, b = 9.37871(14) A, c = 9.85465(13) A). Unlike other Ho6Co2Ga-type compounds, the 2a site in Ho12Co5Bi is exclusively occupied by Co atoms. Four-probe electrical resistivity measurements on sintered polycrystalline samples of (RE)12Co5Bi indicated metallic behavior. Magnetic measurements revealed behavior ranging from frequency-dependent maxima in the ac susceptibility for Y12Co5Bi to possible ferrimagnetic ordering for Gd12Co5Bi to antiferromagnetic ordering with metamagnetic transitions for the remaining compounds. As confirmed by band structure calculations using Y12Co5Bi as a model compound, Y-Y and Y-Co interactions are the most important bonding components, but matrix effects are likely responsible for anomalously short Co-Co contacts in the structure.     

Structures and physical properties of rare-earth zinc antimonides Pr6Zn(1+x)Sb(14+y) and RE6Zn(1+x)Sb14 (RE = Sm, Gd-Ho)

A new series of isostructural ternary rare-earth zinc antimonides RE(6)Zn(1+x)Sb(14+y) (RE = Pr, Sm, Gd-Ho) has been obtained by direct reaction of the elements at 1050-1100 degrees C. Single-crystal X-ray diffraction studies revealed that these compounds adopt an orthorhombic structure type (space group Immm (no. 71), Z = 2, a = 4.28-4.11 A, b = 15.15-14.73 A, c = 19.13-18.56 A in the progression from RE = Pr to Ho) that may be regarded as stuffed variants of a (U(0.5)Ho(0.5))(3)Sb(7)-type host structure. Columns of face-sharing RE(6) trigonal prisms, centered by Sb atoms, occupy channels defined by an extensive polyanionic Sb network. This network is constructed from three-atom-wide and four-atom-wide Sb strips, the latter being linked together by single Sb atoms in RE(6)Zn(1+x)Sb(14) (RE = Sm, Gd-Ho; y = 0), but also by additional Sb-Sb pairs in a disordered fashion in Pr(6)Zn(1+x)Sb(14+y) (y = approximately 0.6). Interstitial Zn atoms then partially fill tetrahedral sites (occupancy of 0.5-0.7) and, to a lesser extent, square pyramidal sites (occupancy of 0.04-0.12), accounting for the observed nonstoichiometry with variable x. Except for the Gd member, these compounds undergo antiferromagnetic ordering below T(N) < 9 K, with the magnetic susceptibilities of the Tb, Dy, and Ho members following the Curie-Weiss law above T(N). For the Ho member, the thermal conductivities are low and the Seebeck coefficients are small and positive, implying p-type character consistent with the occurrence of partial Zn occupancies. At low temperatures (down to 5 K), electrical resistivity measurements for the Tb, Dy, and Ho members indicated metallic behavior, which persists at high temperatures (up to 560 K) for the Ho member. Band structure calculations on an idealized "Gd(6)Zn(2)Sb(14)" model revealed the existence of a pseudogap near the Fermi level.