Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

The type, energy, ion dose, and heating temperature required to ensure a stable minimum work function of a surface in one experimental cycle (at least 2–3 min) are determined. Secondary ion mass spectrograms are recorded using Cs⁺, Ba⁺, and Ar⁺ ions. Cu, Al, and Mo samples are studied. The optimum ion implantation conditions and the activation temperature that provide a stable minimum work function of the sample surfaces are found. The samples implanted by Ba⁺ ions withstand higher temperature and current loads than the samples implanted by Cs⁺ ions. However, the work function in the case of Cs⁺ ions decreases stronger (to 1.9 eV). It is shown that neutral sputtered particles do not leave the surface at eφ ≤ 1.85–1.90 eV.     

The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE

The dynamics of accumulation of electrically active radiation defects under ion doping of epitaxial Cd _x Hg _1−x Te films is studied for various distributions of film composition in the implantation region. The epitaxial films were irradiated by boron ions at room temperature in the continuous regime, with the dose ranging within 10¹¹−3·10¹⁵ cm⁻², energy — 20–150 keV, and ion current density — j = 0.001–0.2 μA·cm⁻². It is found that the natural logarithm of the introduction rate of electrically active radiation defects linearly depends on the epitaxial-film composition in the range of mean projected path of implanted ions. An analysis of the experimental data shows that the dynamics of accumulation of electrically active radiation defects is determined by the epitaxial-film composition in the implantation region. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 25–28, September, 2006.     

Structural and phase transformations in Ni3Fe during high-dose ion implantation

The results are given for experimental studies of the structural-phase state formed in the surface and nearsurface layers of a disordered polycrystalline Ni₃Fe alloy during high-dose ion implantation. The studies used Auger electron spectroscopy, transmission electron microscopy, x-ray structural analysis, and microhardness measurements. The ion implantation was done using the “Raduga” vacuum arc source with a multicomponent cathode of composition Zr (89.5 wt. %)+C+N+O with an acceleration voltage of 50 kV. The implanted ion dose was varied in the range (6.0·10¹⁶–6.0·10¹⁷) ions/cm². It was established that in the surface layer which is alloyed during ion implantation there is amorphization with simulataneous formation of finely dispersed ZrO₂ particles whose dimensions increase with increasing implanted ion dose; this is accompanied by an increased internal mechanical stress. Beyond the ion-implanted layer a sublayer about 10 μm thick with a high dislocation density is formed (the “long-range action” effect). The results of microhardness measurements correlate with the data from structural studies. Institute of the Physics of Strength and Materials Science, Siberian Section, Russian Academy of Science; Tomsk State University—Architectural-Construction University; and Scientific Research Institute for Nuclear Physics at Tomsk Polytechnic University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 15–24, November, 1998.     

Magnetic Properties of Thin Metal-Polymer Films Prepared by High-Dose Ion-Beam Implantation of Iron and Cobalt Ions into Polyethylene Terephthalate

Thin metal-polymer composite films have been prepared by high-dose ion-beam implantation of Fe⁺ and Co⁺ ions into polyethylene terephthalate. The implantation of 40 keV ions at room temperature with doses from 2 · 10¹⁶ to 4 · 10¹⁷ cm⁻² have been performed, with the ion current density of 4 μA/cm². The effects of implantation dose on the film morphology and crystal structure have been investigated via atomic force and magnetic force microscopy and X-ray diffraction. The magnetic properties of synthesized structures have been studied by ferromagnetic resonance and with a vibrating-sample magnetometer. It was established that the properties of ion-implanted samples strongly depend on both the implantation dose and the type of implanted ions. The implantation dose at which the magnetic phase is formed for iron-implanted samples is significantly lower than that for cobalt-implanted ones. At high implantation doses due to polymer sputtering metal-containing layers are formed close to the sample surface for both ions. In this dose range the magnetic properties of implanted samples changed dramatically due to particle oxidation. The coercivity of synthesized layers reaches 180 and 300 Oe for iron- and cobalt-implanted samples, respectively. Authors' address: Vladimir Yu. Petukhov, Kazan Physical-Technical Institute, Sibirskii trakt 10/7, 420029 Kazan, Russian Federation     

Effect of ion sputtering on the statistical properties of a surface

The modification of a gallium arsenide surface during irradiation by heavy cesium ions Cs⁺ is investigated by measuring the surface height distribution with an atomic force microscope. Both increases and decreases in the rms height σ, an integral parameter of the surface, are observed to occur. It is established that for all experimental samples the roughness of the gallium arsenide surface increases in a 1–100 nm lateral range. Analysis of the structure function yields an estimate of the characteristic lateral dimensions of the surface structures arising during ion etching. Zh. Tekh. Fiz. 69, 107–111 (February 1999)     

Electron-stimulated desorption of sodium atoms from oxidized molybdenum

The time-of-flight technique combined with a surface-ionization-based detector has been used to investigate the yield and energy distribution of sodium atoms escaping in electron-stimulated desorption (ESD) from adlayers on the surface of molybdenum oxidized to various degrees and maintained at T=300 K as functions of incident electron energy and surface coverage by sodium. The sodium-atom ESD threshold is about 25 eV, irrespective of sodium coverage and extent of molybdenum oxidation. Molybdenum covered by an oxygen monolayer exhibits secondary thresholds at ∼40 eV and ∼70 eV, as well as low-energy tailing of the energy distributions, its extent increasing with surface coverage by sodium Θ. The most probable kinetic energies of sodium atoms are about 0.23 eV, irrespective of the degree of molybdenum oxidation and incident electron energy at Θ=0.125, and decrease to 0.17 eV as the coverage grows to Θ=0.75. The results obtained are interpreted within a model of Augerstimulated desorption, in which adsorbed sodium ions are neutralized by Auger electrons appearing as the core holes in the 2sO, 4sMo, and 4pMo levels are filled. It has been found that the appearance of secondary thresholds in ESD of neutrals, as well as the extent of their energy distributions, depend on surface coverage by the adsorbate. Fiz. Tverd. Tela (St. Petersburg) 40, 768–772 (April 1998)     

Features of FMR spectra observed in granular films formed by Fe+ implantation into PMMA

Magnetic phase consisting of α-Fe particles arranged in a thin near-surface layer has been synthesized in modified phosphorus-containing polymethylmethacrylate by Fe⁺ implantation at an energy of 40 keV with a dose of 1.2⊙10¹⁷ ion/cm². The spectrum of magnetic resonance of the obtained samples is a superposition of a wide anisotropic absorption line and a set of reproducible lowintensity noiselike signals registered in a wide range of magnetic field. It has been established that a wide absorption line is due to particle conglomerates (larger than 200 nm), each behaving as a thin ferromagnetic film. Noiselike lines can be explained as resonance signals from separate oblate/prolate nanoparticles (50–200 nm in size) randomly oriented with respect to the irradiated surface. Such complicated nanostructures can be formed at an appropriate combination of properties of a polymer matrix, types of bombarded ions and implantation regimes.     

Detection of surface defects under low-energy scattering

Computer simulation of Ga⁺ ion (E ₀ = 40–100 eV) scattering on a GaAs film with defects in the form of vacancies and K⁺ ions (E ₀ = 40–300 eV) on a V-target containing cerium has been carried out in the framework of the multiparticle interaction model. The simulation results show that low-energy scattering can be used as a tool for detection of surface defects.     

Photoionization spectra of silver atoms adsorbed on the surface of a ZnS single crystal

We have used photostimulated flash luminescence to study deep electronic states arising when silver ions Ag⁺ are deposited under high vacuum onto the surface of a ZnS single crystal, followed by creation of the conditions for neutralization of the silver ions. The flux density of the silver ion beam was 10⁷ cm⁻²·sec⁻¹. We have observed the appearance of two types of deep electronic states with photoionization energies 1.60 eV and 1.80 eV, arising after depositing the silver ions onto the surface of the ZnS single crystal. We have hypothesized that there may be two different preferred sites for adsorption of silver atoms on the zinc sulfide surface. The corresponding photoionization spectra of the adsorbed silver atoms have maxima at 775 nm and 690 nm. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 335–338, May–June, 2006.     

X-ray diffraction studies of silicon implanted with high-energy erbium ions

Silicon crystals after implantation of erbium ions with energies in the range 0.8–2.0 MeV and doses in the range 1×10¹²–1×10¹⁴ cm⁻² have been studied by two-and three-crystal x-ray diffraction. Three types of two-crystal reflection curves are observed. They correspond to different structural states of the implanted layers. At moderate doses (1×10¹²–1×10¹³ cm⁻²) a positive strain is observed, due to the formation of secondary radiation defects of interstitial type. An increase of the implantation dose is accompanied by the formation of an amorphous layer separating the bulk layer and a thin monocrystalline surface layer. At an implantation dose of 1×10¹⁴ cm⁻² the monocrystalline surface layer is completely amorphized. Parameters of the implantation layers are determined. A model of the transformation of structural damage is discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 853–857 (May 1997)     

Structural and Chemical Modification in a Polymer by Metal Ion Implantation

Physical and chemical properties changes in a polymer have been studied for polycarbonate (PC) implanted with 100 keV Ni⁺ ions with varying fluence from 1 × 10¹⁴ to 1 × 10¹⁶ ions/cm². The changes in the surface morphology and composition have been observed with atomic force microscopy (AFM) and X-ray diffraction (XRD). The ions implanted induce changes in topography of PC and indicate that the roughness increases dramatically with ion fluence. Implanted metal ions shows direct evidence of compound formation on the surface. The chemical changes in the surface region have been carried out by Raman Spectroscopy and UV-VIS spectroscopy. UV-VIS absorption analysis indicates a drastic decline in optical band gap from 5.46 eV to 1.76 eV at an implanted dose of 1 × 10¹⁶ ions/cm². It could be shown that the partial destruction of chemical bonding under ion implantation leads to the creation of new amorphous and graphite-like structures, which is confirmed by Raman spectroscopy.     

Mechanism of structural changes of Si(111) surfaces subjected to low-energy ion pulses during molecular-beam epitaxy

Reflected high-energy electron diffraction (RHEED) and detection of the intensity oscillations of the specular reflection have been used to investigate morphological changes in Si(111) associated with the two-dimensional layer-by-layer mechanism of silicon growth from a molecular beam under conditions of pulsed (0.25–1 s) bombardment with low-energy (80–150 eV) Kr ions in the interval of small total radiative fluxes (10¹¹–10¹² cm²²), for which the density of radiation-generated defects is small in comparison with the surface density of the atoms. After pulsed ion bombardment an increase in the intensity of the specular reflection is observed if the degree of filling of the monolayer satisfies 0.5<θ<1. No increase in the intensity occurs during the initial stages of filling of the monolayer. The maximum amplitude increment of the oscillations is reached at θ≈0.8. The magnitude of the amplitude increment of the RHEED oscillations increases with temperature up to 400°C and then falls. At temperatures above 500°C amplification of the reflection intensity essentially vanishes. Experiments on multiple ion bombardment of each growing layer showed that the magnitude of the amplitude increment of the oscillations decreased as a function of the number of deposited layers (the order of the RHEED oscillation). A mechanism for the observed phenomena is proposed, based on the concept of surface reconstruction by pulsed ion bombardment accompanied by formation of a (7×7) superstructure, which corresponds to a decrease of the activation energy of surface diffusion of the adatoms. Within the framework of the proposed mechanism the results of Monte Carlo modeling agree with the main experimental data. Zh. éksp. Teor. Fiz. 114, 2055–2064 (December 1998)     

Effects of pulsed irradiation by low-energy ions during homoepitaxy of silicon from a molecular beam

The change in the morphology of a Si(111) surface under pulsed irradiation by 145-eV Kr⁺ ions with a pulse duration of 0.5 s during epitaxy of silicon from a molecular beam is studied experimentally by RHEED. It is found that pulsed irradiation by low-energy ions intensifies the specular reflection. This corresponds to a decrease in the roughness of the growing surface. It is shown that the observed effect depends strongly on the degree of filling of the surface atomic layer, the substrate temperature, and the ion current density. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 10, 689–694 (25 November 1996)     

Raman scattering in a near-surface n-GaAs layer implanted with boron ions

Structure in the Raman scattering spectra of near-surface n-GaAs layers (n=2×10¹⁸ cm⁻³) implanted with 100 keV B⁺ ions in the dose range 3.1×10¹¹–1.2×10¹⁴ cm⁻² is investigated. The qualitative and quantitative data on the carrier density and mobility and on the degree of amorphization of the crystal lattice and the parameters of the nanocrystalline phase as a result of ion implantation are obtained using a method proposed for analyzing room-temperature Raman spectra. Fiz. Tverd. Tela (St. Petersburg) 41, 1495–1498 (August 1999)     

Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Thin SiO₂ layers were implanted with 140 keV Si ions to a dose of 10¹⁷ cm⁻². The samples were irradiated with 130 Mev Xe ions in the dose range of 3×10¹²–10¹⁴ cm⁻², either directly after implantation or after pre-annealing to form the embedded Si nanocrystals. In the as-implanted layers HREM revealed after Xe irradiations the 3–4 nm-size dark spots, whose number and size grew with increase in Xe dose. A photoluminescence band at 660–680 nm was observed in the layers with the intensity dependent on the Xe dose. It was found that passivation with hydrogen quenched that band and promoted emission at ∼780 nm, typical of Si nanocrystals. In spectra of pre-annealed layers strong ∼780 nm peak was observed initially. Under Xe bombardment its intensity fell, with subsequent appearance and growth of 660–680 nm band. The obtained results are interpreted as the emission at ∼660–680 nm belonging to the imperfect Si nanocrystals. It is concluded that electronic losses of Xe ions are mainly responsible for formation of new Si nanostructures in ion tracks, whereas elastic losses mainly introduce radiation defects, which quench the luminescence. Changes in the spectra with growth of Xe ion dose are accounted for by the difference in the diameters of Xe ion tracks and their displacement cascades.     

Ion implantation damage and crystalline-amorphous transition in Ge

Experimental studies on the damage produced in (100) Ge substrates by implantation of Ge⁺ ions at different energies (from 25 to 600 keV), fluences (from 2×10¹³ to 4×10¹⁴ cm⁻²) and temperature (room temperature, RT, or liquid-nitrogen temperature, LN₂T) have been performed by using the Rutherford backscattering spectrometry technique. We demonstrated that the higher damage rate of Ge with respect to Si is due to both the high stopping power of germanium atoms and the low mobility of point defects within the collision cascades. The amorphization of Ge has been modeled by employing the critical damage energy density model in a large range of implantation energies and fluences both at RT and LN₂T. The experimental results for implantation at LN₂T were fitted using a critical damage energy density of ∼1 eV/atom. A fictitious value of ∼5 eV/atom was obtained for the samples implanted at RT, essentially because at RT the damage annihilation plays a non-negligible role against the crystalline–amorphous transition phase. The critical damage energy density model was found to stand also for other ions implanted in crystalline Ge (Ar⁺ and Ga⁺).     

Optimising dislocation-engineered silicon light-emitting diodes

This article presents a study of the possibilities of optimising the electroluminescence (EL) efficiency of dislocation-engineered silicon light-emitting diodes (DELEDs). The diodes were produced by implantation of boron in n-type (100)Si wafers, at a constant ion energy and fluence, of 30 keV and 1×10¹⁵ ions/cm², respectively. The density and the areal coverage by dislocation loops were varied by applying different annealing times in a rapid thermal processing, from 30 s to 60 min. It is shown that the EL efficiency is directly correlated to the number and areal coverage by the loops. The highest population of loops, ∼5×10⁹ /cm², and an areal coverage of around 50% were achieved for 1–5 min annealing. This loop distribution results in optimal DELEDs, having the highest EL response and the largest increase of EL intensity with operating temperature (80–300 K). The results of this work confirm a previously introduced model of charge-carrier spatial confinement by a local stress induced by the edge of the dislocation loops, preventing carrier diffusion to non-radiative recombination centres and enhancing radiative transitions at the silicon band edge. PACS 85.60.Jb; 78.60.Fi; 61.72.Tt     

Comparative emission characteristics of a negative hydrogen ion source with a reflex discharge with and without Cs

A theoretical and experimental investigation is made to determine how cesium in the volume and at the surfaces of an ion source influences its emission characteristics. It is shown that under the real conditions of an ion source, cesium in the volume makes an appreciable influence to the kinetic processes but barely affects the H⁻ ion current extracted from the source. However, cesium at the surface of the source increases the H⁻ ion current severalfold even when the H-H⁻ conversion efficiency is low (γ≈10⁻³). The theoretical conclusions show good agreement with the experimental data obtained in the present study. Zh. Tekh. Fiz. 69, 102–109 (April 1999)     

Measurement and modeling of work function changes during low energy cesium sputtering

In this paper, a H-terminated silicon wafer was bombarded by low energy cesium ions during ToF-SIMS analysis and work function variations of the target were measured for different analysis conditions. This measurement was performed by measuring the shift of the secondary ions energy distributions with a reflectron type analyzer. At first, the silicon’s work function change was found to be −2.3 eV during 500 eV Cs⁺ bombardment at 45°. This effect is due to the creation of a dipolar layer at the surface of the silicon by the implanted cesium. Then the work function variation was measured at 300 eV for varying cesium surface concentrations. The work function was found to decrease monotonously with the increasing cesium surface concentration, as during cesium adsorption experiments. The results were modeled following three different approaches and the value of the effective polarizability α of cesium was found to be equal to 1.9 × 10⁻³⁹ C m²/V. Finally, the effect of the bombardment energy on the work function variation was studied for beams with energies ranging from 250 to 2000 eV. The effective polarizability of cesium was found to increase with increasing Cs beam energy.     

Depth distribution of point defects in Si bombarded by high-energy N5+ and Si5+ ions

Electron spin resonance has been used to study the depth distribution of point defects in Si samples bombarded by N⁵⁺ (E=16 MeV) and Si⁵⁺ (E=26.8 MeV) ions at 175 and 300 K in the dose range (4–8)×10¹⁵ cm⁻². It was established that unlike the implantation of moderate-energy Si ions (E ∼ 100 keV), the depth distributions of planar tetravacancies in samples bombarded by ions at 300 K under these conditions have two maxima. The experimental results indicate that the tetravacancy density maximum closer to the surface is formed as a result of secondary defect formation processes. No continuous amorphous layer was observed in the bulk of any of the Si samples. This experimental observation is evidence of defect annealing which takes place when high-energy ions are implanted in Si. Fiz. Tverd. Tela (St. Petersburg) 40, 217–222 (February 1998)