Diode end-pumped Q-switched high-power intracavity frequency-doubled Nd:GdVO4/KTP green laser

A diode-laser-array end-pumped acousto-optically Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green laser, formed with a three-mirror folded resonator, has been demonstrated. With 15 W of pump power incident upon the Nd:GdVO₄ crystal, a maximum average green output power of 3.75 W was obtained at 50 kHz of pulse repetition frequency, giving an optical conversion efficiency of 25%, whereas the effective intracavity frequency-doubling efficiency was determined to be 72%. At the incident pump power of 12.8 W, the shortest laser pulse was achieved at a pulse repetition rate of 10 kHz, the resulting pulse width, single pulse energy, and peak power were measured to be 35 ns, 108 μJ, and 3.1 kW, respectively. Received: 18 May 2000 / Published online: 20 September 2000     

Passively Q-switched laser operation in a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with a GaAs saturable absorber

By using a piece of GaAs wafer as the saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser with different output couplers has been demonstrated for the first time as far as we know. The largest continuous wave output power of 1.52 W is obtained at the incident pump power of 5.31 W, giving an optical conversion efficiency of 28.7% and a slope efficiency of 30.2%. The shortest pulse width of 11 ns, the largest single-pulse energy of 2.49 μJ and the highest peak power of 190 W are also obtained.     

Diode-end-pumped composite Nd:YVO4 yellow laser based on intracavity frequency-doubled self-Raman laser

We report an intracavity frequency-doubled Q-switched self-Raman yellow laser at 587 nm. A composite Nd:YVO₄ crystal was utilized as self-Raman gain medium. The maximum average output power of yellow light obtained was 1.5 W at the incident pump power of 30 W and at a repetition rate of 50 kHz, corresponding to the optical conversion efficiency of 5%. The shortest pulse width, the maximum pulse energy and the highest peak power were measured to be 5.8 ns, 46.7 μJ and 5.9 kW, respectively.     

Intracavity frequency doubling of an active Q-switched Nd:YAG laser with 2.25 W output power at 473 nm

An active Q-switched diode-end-pumped Nd:YAG laser is reported with 2.9 W output power on the ⁴F_3/2 → ⁴I_9/2 transitions at a pump power of 24 W. With intracavity frequency doubling using a 20-mm-long LBO, a maximum blue output power of 2.25 W is achieved at a repetition rate of 23 kHz. The conversion efficiency from the corresponding Q-switched fundamental output to blue output is 96%. The peak power of the Q-switched blue pulse is up to 610 W with 160 ns pulse width. The fluctuation of the blue output power is less than 4.0% at the maximum output power.     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

Short pulse passively Q-switched Nd:GdYVO4 laser using a GaAs mirror

We report on a diode pumped passively Q-switched Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. We show experimentally that by using an appropriately coated GaAs wafer as output coupler, the Q-switched pulse width can be significantly suppressed. Stable Q-switched pulse train with pulse width of 2.2 ns, peak power of 26.3 kW, repetition rate of 15.38 kHz have been obtained under an absorbed pump power of 8.54 W. The physical mechanism of pulse width narrowing by the GaAs wafer was also experimentally investigated.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.     

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd:YVO₄ laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%.     

Continuous wave and passively Q-switched laser performance of a composite crystal bonded with three Nd:YVO<Subscript>4</Subscript> single crystals

The laser performance of a composite crystal bonded with three Nd:YVO₄ single crystals has been investigated for the first time as far as we know. The largest continuous wave output power of 2.68 W is obtained at the incident pump power of 6.2 W, giving an optical conversion efficiency of 43.1% and a slope efficiency of 45.9%. For passively Q-switched operation with Cr⁴⁺:YAG of 71% initial transmission, the shortest pulse width of 18.2 ns, the largest single-pulse energy of 19.9 μJ, and the highest peak power of 1.12 kW are achieved, with the pulse repetition rate being 44.9 kHz, at the incident pump power of 6.2 W. The composite crystal can generate more excellent laser performance, when compared with the single crystals.     

LD-pumped passively Q-switched Nd:YVO4 infrared and green lasers

A laser diode directly end-pumped, passively Q-switched Nd:YVO₄/Cr:YAG laser is presented in this paper. With 600 mW incident pump laser, Q-switched 1064 nm laser with an average power of 138 mW, pulse width of 19.8 ns, repetition rate of 170.1 kHz and peak power of 40.96 W is obtained. When a KTP crystal was inserted into the cavity, Q-switched 532 nm laser with an average power of 56 mW, pulse width of 28.4 ns, repetition rate of 118.2 kHz and peak power of 16.7 W is obtained at last.     

Passively Q-switched <Emphasis Type="Italic">a</Emphasis>-cut Nd:YVO<Subscript>4</Subscript> self-Raman laser

A passively Q-switched a-cut Nd:YVO₄ self-stimulating Raman laser using a Cr:YAG saturable absorber has been demonstrated for the first time. The maximum average output power of the self-Raman laser at 1176 nm is 347 mW at the incident pump power of 10 W with a pulse repetition frequency (PRF) of 66 kHz. The pulse width, pulse energy of the 1176 nm are found to be 10 ns and 5.6 μJ. The conversion efficiency from diode laser input power to Raman output power is 3.47%.     

LD-pumped single-frequency passively Q-switched green laser

A LD-pumped single-frequency passively Q-switched Nd: YVO₄/KTP/Cr:YAG green laser is presented. Cr:YAG plays the double role of a passive Q-switch and a Brewster plate. With 900 mW incident pump laser, single-frequency passively Q-switched green laser with average power of 86 mW, pulse width of 14.7 ns, repetition rate of 140.8 kHz and peak power of 41.6 W is obtained. Measurement shows that the pulse amplitude and period between pulses are stable within ±1.5%.     

Compact low threshold Cr:YAG passively Q-switched intracavity optical parametric oscillator

We report a compact KTP-based intracavity optical parametric oscillator (IOPO) driven by a diode-end-pumped passively Q-switched Nd:YVO₄/Cr:YAG laser. For the first time, we take the thermal lens effect of the Cr:YAG into consideration and discuss its impact on the signal output. Diode pump threshold as low as 0.52 W has been achieved, which is the lowest result reported to date. At the incident diode pump power of 4 W, we obtained the maximum signal average and peak power of 358 mW and 12.5 kW, respectively, corresponding to a diode-to-signal conversion efficiency of 9%. Moreover, cavity-dumping characteristic and pulse transforming process from 1064 to 1573 nm are qualitatively analyzed.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

Dual-polarization electro-optical Q-switched ceramic laser

A dual-polarization electro-optical Q-switched Nd:YAG ceramic laser was studied. By selecting the appropriate size of calcite crystals, the dual-polarization Q-switched pulse was achieved by characteristics of calcite crystal. Experimental results show that compared with the traditional single-polarization electro-optical Q-switched laser, insertion loss is reduced, dynamic to static ratio is greatly improved, thermally induced birefringence of electro-optical Q-switched Nd:YAG ceramic laser is effective compensated. The output power of 19 W and the pulse width of 13 ns are obtained at the repetition rate of 1 kHz and pumped power of 144 W. The dynamic to static ratio is 71%. The results formed the basis for the further development of the high power and high efficiency ceramic red laser.     

Simultaneous mode locking in an acousto-optic Q-switched Nd:LuVO4 laser

Simultaneous mode locking had been obtained in acousto-optic Q-switched Nd:LuVO₄ laser by using a Z-type cavity. Pulses with great average output power and narrow pulse width were observed in our experiment. The modulation depth is nearly 90% and the width of Q-switched envelope is about 70 ns, and both maintained constant with the increase of pump power. The maximum average output power of 1.83 W was obtained when the incident pump power was 6.78 W and the Q-switched envelop repetition frequency was 30 kHz. Also the average pulse width of the mode locking among the Q-switched envelope is estimated to be about 200 ps.     

Laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173 nm

A laser diode pumped actively Q-switched Nd:GdVO₄ self-Raman laser operating at 1173 nm is presented. The maximum output power was 2.26 W at an incident pump power of 18 W, with the corresponding optical conversion efficiency of 12.6%. Two different resonator configurations were investigated in order to achieve high output power and efficiency.     

An efficient and compact laser-diode end-pumped intracavity frequency-tripled Nd: YVO4 355 nm laser

By exploiting the intracavity frequency conversion configuration, a diode end-pumped acousto-optic (AO) Q-switched Nd:YVO₄ 355 nm laser was demonstrated in this paper. Two LBO crystals were inserted in the cavity to realize the frequency tripling operation, a cascade of the second harmonic generation (SHG) and sum frequency mixing (SFM). Under the absorbed pump power of 13 W, the maximum average output power at 355 nm was obtained to be 1.32 W at the repetition frequency of 17 kHz, with the optical-to-optical conversion efficiency of 10.2%. The corresponding pulse width was 10.2 ns, with the energy of a single pulse and corresponding peak power estimated to be 77.6 μJ and 7.61 kW, respectively.     

Diode-pumped simultaneously Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/LBO red Laser

A diode-end-pumped simultaneously Q-switched and mode-locked intracavity frequency doubled Nd:GdVO₄/LBO red laser with an acousto-optic Q-switch was realized. The maximum red laser output power of 250 mW was obtained at the incident pump power of 8.3 W and the repetition rate of 10 kHz. At 5 kHz, the maximum mode-locking modulation depth of about 80% was achieved with the Q-switched pulse width of 440 ns. The red mode-locked pulse inside the Q-switched pulse had a repetition rate of 115 MHz, its average pulse width was estimated to be about 350 ps.