In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams

Focused ion beam implantation of gallium and dysprosium was used to locally insulate the near-surface two-dimensional electron gas of Al_xGa_1−xN/GaN heterostructures. The threshold dose for insulation was determined to be 2×10¹⁰ cm⁻¹ for 90 keV Ga⁺ and 1×10⁹ cm⁻¹ for 200 keV Dy²⁺ at 4.2 K. This offers a tool not only for inter-device insulation but also for direct device fabrication. Making use of “open-T” like insulating line patterns, in-plane gate transistors have been fabricated by focused ion beam implantation. An exemplar with a geometrical channel width of 1.5 μm shows a conductance of 32 μS at 0 V gate voltage and a transconductance of around 4 μS, which is only slightly dependent on the gate voltage.     

Preparation and characterization of ZnO thin films prepared by thermal oxidation of evaporated Zn thin films

In this paper, the experimental results regarding some structural, electrical and optical properties of ZnO thin films prepared by thermal oxidation of metallic Zn thin films are presented.Zn thin films (d=200–400 nm) were deposited by thermal evaporation under vacuum, onto unheated glass substrates, using the quasi-closed volume technique. In order to obtain ZnO films, zinc-coated glass substrates were isochronally heated in air in the 300–660 K temperature range, for thermal oxidation.X-ray diffraction (XRD) studies revealed that the ZnO films obtained present a randomly oriented hexagonal nanocrystalline structure. Depending on the heating temperature of the Zn films, the optical transmittance of the ZnO films in the visible wavelength range varied from 85% to 95%. The optical band gap of the ZnO films was found to be about 3.2 eV. By in situ studying of the temperature dependence of the electrical conductivity during the oxidation process, the value of about 2×10⁻² Ω⁻¹ m⁻¹ was found for the conductivity of completely oxidized ZnO films.     

Search for γγ→ηb in ee collisions at LEP 2

A search for the pseudoscalar meson η_b is performed in two-photon interactions at LEP 2 with an integrated luminosity of 699 pb⁻¹ collected at e⁺e⁻ centre-of-mass energies from 181 GeV to 209 GeV. One candidate event is found in the six-charged-particle final state and none in the four-charged-particle final state, in agreement with the total expected background of about one event. Upper limits of Γ_γγ(η_b)×BR(η_b→4 charged particles)<48 eV, Γ_γγ(η_b)×BR(η_b→6 charged particles)<132 eV are obtained at 95% confidence level, which correspond to upper limits of 9.0% and 25% on these branching ratios.     

Electrical characterisation of phosphorus-doped ZnO thin films grown by pulsed laser deposition

Phosphorus-doped ZnO films were grown by pulsed laser deposition using a ZnO:P₂O₅-doped target as the phosphorus source with the aim of producing p-type ZnO material. ZnO:P layers (with phosphorus concentrations of between 0.01 to 1 wt%) were grown on a pure ZnO buffer layer. The electrical properties of the films were characterised from temperature dependent Hall-effect measurements. The samples typically showed weak n-type conduction in the dark, with a resistivity of 70 Ω cm, a Hall mobility of μ_n0.5 cm² V ⁻¹ s⁻¹ and a carrier concentration of n3×10¹⁷ cm⁻³ at room temperature. After exposure to an incandescent light source, the samples underwent a change in conduction from n- to p-type, with an increase in mobility and decrease in concentration for temperatures below 300 K.     

Ni–Al ohmic contact to p-type 4H-SiC

Investigations on Ni/Al alloys to form ohmic contacts to p-type 4H-SiC are presented in this paper. Different ratios of Ni/Al were examined. Rapid thermal annealing was performed in argon atmosphere at 400 C for 1 min, followed by an annealing at 1000 C for 2 min. In order to extract the specific contact resistance, TLM test structures were fabricated. A specific contact resistance of 3×10⁻⁵ Ω cm² was obtained reproducibly on Al²⁺ implanted p-type layers, having a doping concentration of 1×10¹⁹ cm⁻³. The lowest specific contact resistance value measured amounts to 8×10⁻⁶ Ω cm².     

Carrier concentration and shallow electron states in In-doped hydrothermally grown ZnO

Single-crystal ZnO has been hydrothermally grown with additional In₂O₃ in the solution. Schottky barrier contacts have been deposited by electron beam evaporation of Pd onto the face. Capacitance–voltage measurements have been performed to reveal the carrier concentration as a function of the In₂O₃ content in the solution, and secondary-ion mass spectrometry was used to measure the resulting In concentration in the samples. For an In₂O₃ content of 2×10¹⁹ cm⁻³, the average free electron concentration increased to 5×10¹⁸ cm⁻³ compared to 4×10¹⁷ cm⁻³ for the non-doped material. An increase of the In₂O₃ content to 4×10¹⁹ cm⁻³ leads to a measured carrier concentration of approximately 1×10¹⁹ cm⁻³; however, only up to a quarter of the incorporated In became electrically active. From thermal admittance spectroscopy measurements two prominent electronic levels are found, and compared with to the non-doped material case, the freeze-out of the shallow doping in the In-doped samples takes place at lower temperatures (below 80 K).     

Li mobility in Li0.5 − xNaxLa0.5TiO3 perovskites (0 ≤ x ≤ 0.5): Influence of structural and compositional parameters

The dependence of Li mobility on structure and composition of Li_0.5 − xNa_xLa_0.5TiO₃ perovskites (0 ≤ x ≤  0.5) has been investigated by means of neutron diffraction, nuclear magnetic resonance and impedance spectroscopy. At 300 K, all samples display a rhombohedral superstructure (R-3c S.G.), where octahedra are out of phase tilted along [111] direction of the ideal cubic cell. The elimination of the octahedral tilting is responsible for the rhombohedral–cubic transformation, detected near 1000 K. In these perovskites, La and Na cations are randomly distributed in A sites, but Li ions are fourfold coordinated at unit cell faces of the cubic perovskite. Lithium conductivity, σ_300 K, decreases with the sodium content, decreasing from values typical of fast ionic conductors, 10^− 3 S/cm, to those of good insulators, 10^− 10 S/cm, when the interconnectivity between vacant A sites is lost (x > 0.3). In samples with x < 0.3, dc conductivity displays a non-Arrhenius behaviour, decreasing activation energy from ~ 0.37 to 0.25 eV when the sample is heated between 77 and 500 K. The temperature dependence of B_Li factors shows the existence of two regimes for Li motion. Below 373 K, Li ions remain partially located near square oxygen windows that connect contiguous A sites, but above 400 K, extended Li motions become dominant. The additional decrease of activation energy from 0.25 to 0.16 eV (low-temperature ⁷Li NMR value), should require the full elimination of octahedral tilting which is only produced above 1000 °C.     

Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

We review the progress in the industrial production of SiC substrates and epitaxial layers for high power semiconductor devices. Optimization of SiC bulk growth by the sublimation method has resulted in the commercial release of 100 mm n-type 4H-SiC wafers and the demonstration of micropipe densities as low as 0.7 cm⁻² over a full 100 mm diameter. Modelling results link the formation of basal plane dislocations in SiC crystals to thermoelastic stress during growth. A warm-wall planetary SiC-VPE reactor has been optimized up to a 8×100 mm configuration for the growth of uniform 0.01–80-micron thick, specular, device-quality SiC epitaxial layers with low background doping concentrations of <1×10¹⁴ cm⁻³, and intentional p- and n-type doping from 1×10¹⁵ to >1×10¹⁹ cm⁻³. We address the observed degradation of the forward characteristics of bipolar SiC PiN diodes [H. Lendenmann, F. Dahlquist, J.P. Bergmann, H. Bleichner, C. Hallin, Mater. Sci. Forum 389–393 (2002) 1259], and discuss the underlying mechanism due to stacking fault formation in the epitaxial layers. A process for the growth of the epitaxial layers with a basal plane dislocation density <10 cm⁻² is demonstrated to eliminate the formation of these stacking faults during device operation [J.J. Sumakeris, M. Das, H.McD. Hobgood, S.G. Müller, M.J. Paisley, S. Ha, M. Skowronski, J.W. Palmour, C.H. Carter Jr., Mater. Sci. Forum 457–460 (2004) 1113].     

Influence of octahedral tilting and composition on electrical properties of the Li0.2 − xNaxLa0.6TiO3 (0 ≤ x ≤ 0.2) series

The Rietveld analysis of ND patterns of polycrystalline Li_0.2 − xNa_xLa_0.6TiO₃ (0 ≤ x < 0.2) samples, recorded between 300 and 1075 K, shows an orthorhombic–tetragonal transformation, in which the octahedral tilting along the b axis is eliminated at ~ 773 K, but the vacancy ordering along the c axis remains. In Li rich samples, conductivity (10^− 3 Ω^− 1 cm^− 1 at 300 K) departs from the Arrhenius behaviour, decreasing activation energies from 0.37 to 0.14 eV when octahedral tilting is eliminated. Successive Maxwell–Wagner blocking processes, detected in the real part of dielectric constant plots, have been ascribed to the Li blocking at interior domains, grain-boundary and electrode–electrolyte interfaces. The substitution of Li⁺ by Na⁺ decreases the amount of vacant A-sites, decreasing several orders of magnitude the conductivity when the amount of vacancies approaches the vacancy percolation threshold (n_p = 0.27). Below the percolation threshold, Li ions only display local mobility, remaining confined into small domains of perovskites.     

Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition

Polycrystalline Ga-doped (Ga content: 4 wt%) ZnO (GZO) thin films were deposited on glass substrates at 200 C by a reactive plasma deposition with DC arc discharge technique. The dependences of structural and electrical properties of GZO films on thickness, ranging from 30 to 560 nm, were investigated. Carrier concentration, n, and Hall mobility, μ, increases with increasing film thickness below 100 nm, and then the n remains nearly constant and the μ gradually increases until the thickness reaches 560 nm. The resistivity obtained of the order of 10⁻⁴ Ω cm for these films decreases with increasing film thickness: The highest resistivity achieved is 4.4×10⁻⁴ Ω cm with n of 7.6×10²⁰ cm⁻³ and μ of 18.5 cm²/V s for GZO films with a thickness of 30 nm and the lowest one is 1.8×10⁻⁴ Ω cm with n of 1.1×10²¹ cm⁻³ and μ of 31.7 cm²/V s for the GZO film with a thickness of 560 nm. X-ray diffraction pattern for all the films shows a hexagonal wurtzite structure with its strongly preferred orientation along the c-axis. Full width at half maximum of the (002) preferred orientation diffraction peak of the films decreases with increasing film thickness below 100 nm.     

Bi-induced vibrational modes in GaAsBi

We have studied GaAs_1−xBi_x (up to x3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at 186 cm⁻¹ and 214 cm⁻¹ with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at 214 cm⁻¹ is identified as originating from substitutional Bi at the As site in GaAsBi.     

Study of the process ee→ππγ in c.m. energy range 600–970 MeV at CMD-2

The cross section of the process e⁺e⁻→π⁰π⁰γ has been measured in the c.m. energy range 600–970 MeV with the CMD-2 detector. The following branching ratios have been determined:

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and

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. Evidence for the ρ⁰→f₀(600)γ decay has been obtained:

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. From a search for the process e⁺e⁻→ηπ⁰γ the following upper limit has been obtained: at 90% CL.     

Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy

The strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam epitaxy are reported. The proposed growth model emphasizes the dominant role of the coalescence process in the formation of a dislocation network in 2H-InN. Edge type threading dislocations and dislocations of mixed character have been found to be the dominating defects in wurtzite InN layers. It is demonstrated that these dislocations are active suppliers of electrons and an exponential decay of their density with the thickness implies a corresponding decay in the carrier density. Room temperature mobility in excess of 1500 cm² V ⁻¹ s⁻¹ was obtained for 800 nm thick InN layers with dislocation densities of 3×10⁹ cm⁻².     

Photoproduction of D mesons associated with a leading neutron

The photoproduction of D^*±(2010) mesons associated with a leading neutron has been observed with the ZEUS detector in ep collisions at HERA using an integrated luminosity of 80 pb⁻¹. The neutron carries a large fraction, x_L>0.2, of the incoming proton beam energy and is detected at very small production angles, θ_n<0.8 mrad, an indication of peripheral scattering. The D^* meson is centrally produced with pseudorapidity |η|<1.5, and has a transverse momentum p_T>1.9 GeV, which is large compared to the average transverse momentum of the neutron of 0.22 GeV. The ratio of neutron-tagged to inclusive D^* production is 8.85±0.93(stat.)^+0.48_−0.61(syst.)% in the photon–proton center-of-mass energy range 130<W<280 GeV. The data suggest that the presence of a hard scale enhances the fraction of events with a leading neutron in the final state.     

Ultrafast dynamics and temperature effects on the quantum efficiency of the ring-opening reaction of a photochromic indolylfulgide

The ultrafast ring-opening reaction of the molecular switch 1,2-Dimethyl-3-indolylfulgide dissolved in acetonitrile is investigated by temperature dependent quantum efficiency measurements and time-resolved transient absorption spectroscopy in the ultraviolet and visible spectral range. The photoreaction is found to be thermally activated with an activation energy of about 1640 cm^− 1. The transient absorption signal is bi-exponential with the time constants τ₁ = 0.7 ps and τ₂ = 12 ps. The fast time constant is due to solvation dynamics, while the main component τ₂ is attributed to the excited state lifetime and product formation. A long-lived intermediate state in the photoreaction can be excluded.     

Structural properties of 10 μm thick InN grown on sapphire (0001)

The structural properties of a 10 μm thick In-face InN film, grown on Al₂O₃ (0001) by radio-frequency plasma-assisted molecular beam epitaxy, were investigated by transmission electron microscopy and high resolution x-ray diffraction. Electron microscopy revealed the presence of threading dislocations of edge, screw and mixed type, and the absence of planar defects. The dislocation density near the InN/sapphire interface was 1.55×10¹⁰ cm⁻², 4.82×10⁸ cm⁻² and 1.69×10⁹ cm⁻² for the edge, screw and mixed dislocation types, respectively. Towards the free surface of InN, the density of edge and mixed type dislocations decreased to 4.35×10⁹ cm⁻² and 1.20×10⁹ cm⁻², respectively, while the density of screw dislocations remained constant. Using x-ray diffraction, dislocations with screw component were found to be 1.2×10⁹ cm⁻², in good agreement with the electron microscopy results. Comparing electron microscopy results with x-ray diffraction ones, it is suggested that pure edge dislocations are neither completely randomly distributed nor completely piled up in grain boundaries within the InN film.     

Lightning effects at high altitudes: sprites, elves, and terrestrial gamma ray flashes

A fascinating set of newly discovered complex phenomena indicate that thunderstorms and lightning discharges are strongly coupled to the overlying upper atmospheric regions. Lightning discharges at cloud altitudes (<20 km) affect altitudes >40 km either via the release of intense electromagnetic pulses (EMPs) and/or the production of intense quasi-static electric (QE) fields. The intense transient QE fields of up to 1 kV·m⁻¹, which for positive CG discharges is directed downwards, can avalanche accelerate upward-driven runaway MeV electron beams, producing brief (1 ms) flashes of gamma radiation. A spectacular manifestation of these intense fields is the so-called ‘Sprites’, large luminous discharges in the altitude range of 40 km to 90 km, which are produced by the heating of ambient electrons for a few to tens of milliseconds following intense lightning flashes. The so-called ‘Elves’ are optical flashes which last much shorter (<1 ms) than sprites, and are typically limited to 80–95 km altitudes with much larger (up to 600 km) lateral extent, being produced by the heating, ionization, and optical emissions due to the EMPs radiated by both positive and negative lightning discharges. To cite this article: U.S. Inan, C. R. Physique 3 (2002) 1411–1421.     

Quantification of the water boiling heat transfer in micro-structures by image analysis

The heat transfer performance of a micro-vaporizer has been measured by conventional methods (using temperatures, flow rates, effective power input). The study was carried out for laminar flow in channels (5 mm×3 cm×200 μm) micro-structured with square obstacles to increase the specific area. The results show that high heat transfer coefficients (1300– 2500 W m⁻²/C⁻¹) can be reached in such a micro-structured channel. Image analysis was done to estimate the volume vapour fraction, which can be converted into the mass vapour fraction using a slip ratio and avoids the need for any temperature or electric power input measurements. The estimation of this slip ratio is discussed in this paper.     

Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth

GaN has been grown using Si/N treatment growth by MOVPE on sapphire (0001) in a home-made vertical reactor. The growth was monitored by in situ laser reflectometry. The morphological, electrical and optical properties of GaN are investigated at all the growth stages. To this aim, the growth was interrupted at different stages. The obtained samples are ex situ characterized by scanning electron microscopy (SEM), room temperature Van der Pauw–Hall electrical transport and low temperature (13 K) photoluminescence (PL) measurements. The SEM images show clearly the coalescence process. A smooth surface is obtained for a fully coalesced layer. During the coalescence process, the electron concentration (n) and mobility (μ) vary from 2×10¹⁹ cm⁻³ to 2×10¹⁷ cm⁻³ and 12 cm²/V s–440 cm²/V s, respectively. The PL maxima shift to higher energy and the FWHM decreases to about 4 meV. A correlation between PL spectra and Hall effect measurements is made. We show that the FWHM follows a n^2/3 power law for n above 10¹⁸ cm⁻³.     

Far-infrared dielectric functions and phonon spectra of alloys determined by spectroscopic ellipsometry

We have used spectroscopic ellipsometry to determine the complex dielectric function of a series of ternary Be_xZn_1−xTe thin films grown by molecular beam epitaxy. The II–VI semiconductor alloys were grown on InP substrates that had an InGaAs buffer layer. After the growth, X-ray diffraction experiments were performed in order to determine the alloy concentration. A standard inversion technique was used to obtain the dielectric functions from the measured ellipsometric spectra, obtained between 2000 nm (5000 cm⁻¹) and 40,000 nm (250 cm⁻¹). By modelling the dielectric function as a collection of oscillators, representing longitudinal and transverse optical phonons of the Be_xZn_1−xTe lattice, we were able to recover the phonon spectra for this alloy system. It is argued that the additional phonon modes that are obtained from ellipsometry are best understood from the recently-proposed percolation model.