Characterization of Cu additive FePt-C granular films

FePt-C granular films doped with different Cu atomic fractions (x_Cu) were fabricated using facing-target sputtering at room temperature and subsequently annealed at 650 °C. Structural analyses reveal that the as-deposited films are in amorphous state. Appropriate Cu addition (x_Cu = 14) can improve the ordering of L1₀ FePt phase, and excessive Cu doping destroys the formation of ordered L1₀ phase with the appearance of Fe₃C and CuPt phases. Besides, preferential graphitization of amorphous carbon (a-C) occurs near large metal particles upon annealing. Annealing turns the as-deposited superparamagnetic films into ferromagnetic associated with coercivity peaks at x_Cu = 14, drops from ∼11.2 kOe at 5 K to ∼7.2 kOe at 300 K in a 50 kOe field.     

Low-temperature ordering of L10 FePt phase in FePt thin film with AgCu underlayer

FePt (20 nm) films with AgCu (20 nm) underlayer were prepared on thermally oxidized Si (0 0 1) substrates at room temperature by using dc magnetron sputtering, and the films annealed at different temperature to examine the disorder–order transformation of the FePt films. It is found that the ordered L1₀ FePt phase can form at low annealing temperature. Even after annealing at 300 °C, the in-plane coercivity of 5.2 kOe can be obtained in the film. With increase in annealing temperature, both the ordering degree and coercivity of the films increase. The low-temperature ordering of the films may result from the dynamic stress produced by phase separation in AgCu underlayer and Cu diffusion into FePt phase during annealing.     

Microstructure and magnetic properties of FePt:Ag nanocomposite films on SiO2/Si(1 0 0)

FePt:Ag nanocomposite films were prepared by pulsed filtered vacuum arc deposition system and subsequent rapid thermal annealing on SiO₂/Si(1 0 0) substrates. The microstructure and magnetic properties were investigated. A strong dependence of coercivity and ordering of the face-central tetragonal structure on both Ag concentration and annealing temperature was observed. With Ag concentration of 22% in atomic ratio, the coercivity got to 6.0 kOe with a grain size of 6.7 nm when annealing temperature was 400 °C.     

Dependence of magnetic characteristics on sputtering-power and substrate-temperature in amorphous Tb40(FeCoV)60 films

The amorphous Tb₄₀(Fe₄₉Co₄₉V₂)₆₀ films were deposited at different sputtering powers and substrate temperatures. The microstructural and magnetic characteristics were investigated by means of field emission scan electron microscope, magnetic force microscope and vibrating sample magnetometer. Our results show that with increasing sputtering power, out-of-plane coercivity decreases monotonically while saturation magnetization has a maximum value of 231 kA/m for the sample prepared at 50 W. The as-deposited alloy films are amorphous, whereas the coercivity and saturation magnetization are strongly dependent on the substrate temperature. An out-of-plane hysteresis loop with coercivity below 22 mT and saturation magnetization over 290 kA/m is obtained combining dc power and substrate temperature. The dominant mechanism of room temperature coercivity appears to be domain wall pinning, rather than nucleation under all conditions measured. The variation of saturation magnetization is similar to that of perpendicular magnetic anisotropy with either sputtering power or substrate temperature according to the difference of magnetic domain structure.     

Amorphous Ni-Al underlayer-accelerated L10 ordering transition of FePt thin films

In the present study, we succeeded in accelerating the L1₀ ordering transition of FePt thin films by employing amorphous Ni-Al as underlayers. The coercivity H_c = 5 kOe and ordering parameter S = 0.67 of FePt thin films deposited on a Ni-Al underlayer with a thickness of ∼5 nm after 380 °C annealing for 30 min are significantly higher than those H_c = 0.4 kOe and S = 0.35 of the films without the Ni-Al underlayer. The L1₀ ordering process of and the coercivity of FePt thin films can be significantly tuned by varying the thickness of the Ni-Al underlayer.     

Low-temperature ordering and enhanced coercivity of L10-FePt thin films with Al underlayer

FePt multilayer films with and without Al underlayer were prepared by magnetron sputtering on SiO₂ substrate and subsequently annealed in vacuum. Experimental results suggest that the existence of Al underlayer can effectively reduce the ordering temperature and increase the coercivity of FePt films. Due to the slight larger lattice constant of Al underlayer than that of FePt films, [Fe (0.66 nm)/Pt (0.84 nm)]₃₀ films begin to order at 350 °C and the coercivity of them reach to 5.7 kOe after annealing at 400 °C for half an hour.     

Effect of interfacial diffusion on microstructure and properties of FePt/B4C multifunctional multilayer composite films

FePt/B₄C multilayer composite films were prepared by magnetron sputtering and subsequent annealing in vacuum. By changing Fe layer thickness of [Fe/Pt]₆/B₄C films, optimal magnetic property (8.8 kOe and remanence squareness is about 1.0) is got in [Fe(5.25 nm)/Pt(3.75 nm)]₆/B₄C sample whose composition is Fe rich and near stoichiometric ratio. The characterizations of microstructure demonstrate that the diffusion of B and C atoms into FePt layer depends strongly on B₄C interlayer thickness. When B₄C interlayer thickness of [Fe(2.625 nm)/Pt(3.75 nm)/Fe(2.625 nm)/B₄C]₆ films is bigger than 3 nm, stable value of grain size (6-6.5 nm), coercivity (6-7 kOe) and hardness (16-20 GPa) is observed. Finally, the multifunctional single FePt/B₄C composite film may find its way to substitute traditional three-layer structure commonly used in present data storage technology.     

Self-assembled strontium ferrite dot array on Au underlayer

Strontium ferrite (SrM) thin films were deposited on thermally oxidized silicon wafer with Au underlayer. Gold underlayers were prepared at various substrate temperatures by using a magnetron sputtering system. C-axis oriented SrM perpendicular films and preferred (1 1 1) orientation of underlayer have confirmed by X-ray diffraction patterns. The intensity of (1 1 1) diffraction line for Au and that of (0 0 l) diffraction line for strontium ferrite decrease with increase in substrate temperature (T_u) The maximum coercivity and remanent squareness ratio in perpendicular direction, at T_u of 500 °C, are 5.4 kOe and 0.68, respectively. The strength of the intergranular interaction of SrM magnetic particles is described by the parameter Δm. The SrM/Au films prepared at T_u above 100 °C have smaller Δm peak values than that for SrM/Au films prepared at T_u of room temperature. This behavior is related to low magnetostatic coupling between the magnetic particles separated by the non-magnetic amorphous phase.     

Preparation of strontium hexaferrite film by pulsed laser deposition with in situ heating and post annealing

Strontium hexaferrite (SrFe₁₂O₁₉) films have been fabricated by pulsed laser deposition on Si(1 0 0) substrate with Pt(1 1 1) underlayer through in situ and post annealing heat treatments. C-axis perpendicular oriented SrFe₁₂O₁₉ films have been confirmed by X-ray diffraction patterns for both of the in situ heated and post annealed films. The cluster-like single domain structures are recognized by magnetic force microscopy. Higher coercivity in perpendicular direction than that for the in-plane direction shows that the films have perpendicular magnetic anisotropy. High perpendicular coercivity, around 3.8 kOe, has been achieved after post annealing at 500 °C. Higher coercivity of the post annealed SrFe₁₂O₁₉ films was found to be related to nanosized grain of about 50–80 nm.     

Influence of the nitrogen contents on the permeability characteristics and soft magnetic properties of FeHfN films

High permeability magnetic films can enhance the inductance of thin-film inductors in DC-DC converters. In order to obtain high permeability, the uniaxial anisotropy and coercivity should be as low as possible. This study employed dc reactive magnetron sputtering to fabricate nanocrystalline FeHfN thin films. The influence of the nitrogen flow on the composition, microstructure, and permeability characteristics, as well as magnetic properties was investigated. Increasing the nitrogen content can alter FeHfN films from amorphous-like to crystalline phases. The magnetic properties and permeability depend on variations in the microstructure. With the optimum N₂/Ar flow ratio of 4.8% (N₂ flow: 1.2 sccm), low anisotropy (H_K = 18 Oe), low coercivity (H_C = 1.1 Oe) and high permeability (μ′ > 600 at 50 MHz) were obtained for fabrication of a nanocrystalline FeHfN film with a thickness of around 700 nm. Such as-fabricated FeHfN films with a permeability of over 600 should be a promising candidate for high-permeability ferromagnetic material applications.     

Optical and electrical properties of thermally evaporated In49Se48Sn3 films

Nearly stoichiometric thin films of In₄₉Se₄₈Sn₃ were deposited at room temperature, by conventional thermal evaporation of the presynthesized materials, onto precleaned glass substrates. The microstructural studies on the as-deposited and annealed films, using transmission electron microscopy and diffraction (TEMD), revealed that the as-deposited films are amorphous in nature, while those annealed at 498 K are crystalline. The optical properties of the investigated films were determined from the transmittance and reflectance data, in the spectral range 650-2500 nm. An analysis of the optical absorption spectra revealed a non-direct energy gap characterizing the amorphous films, while both allowed and forbidden direct energy gaps characterized the crystalline films. The electrical resistance of the deposited films was carried out during heating and cooling cycles in the temperature range 300-600 K. The results show an irreproducible behavior, while after crystallization the results become reproducible. The analysis of the temperature dependence of the resistance (ln(R) vs. 1000/T) for crystalline films shows two straight lines corresponding to both extrinsic and intrinsic conduction. The room temperature I-V characteristics of the as-deposited films sandwiched between similar Ag metal electrodes shows an ohmic behavior, while non-ohmic behavior attributed to space charge limited conduction has been observed when the films are sandwiched between dissimilar Ag/Al metal electrodes.     

Effect of Co or Mn addition on the soft magnetic properties of amorphous Fe89−xZr11Bx (x=5, 10) alloy ribbons

The temperature and field dependent magnetic properties of melt-spun amorphous Fe_89−x−yZr₁₁B_x(Co,Mn)_y (x=5, 10 and 0≤y≤10) alloys in the temperature range 5-1200 K are reported. The Curie temperature and saturation magnetization at room temperature increase (decrease) almost linearly with Co (Mn) addition. With increasing Co concentration, the room temperature coercivity increases at the rate of 2.26 (0.28) A/m per at% for the x=5 (10) samples. The high-field magnetic susceptibility and local magnetic anisotropy decrease (increases) rapidly with increasing Co (Mn) concentration. The thermomagnetic curves show a marked increase in magnetization above 850 K corresponding to the crystallization of α-FeCo (α-Fe) phase in samples containing Co (Mn). The Curie temperature of the crystalline phase increases (remains same) with increasing Co (Mn) concentration with the formation of α-FeCo (α-Fe). Addition of Co up to 10 at% in Fe-Zr-B improves the room temperature saturation magnetization from 0.56 to 1.2 T, and Curie temperature from 315 to 476 K. Also, the coercivity increases with Co addition from 1.27 to 23.88 A/m for x=5 and from 7.64 to 10.35 A/m for x=10 alloy. The non-collinear spin structures that characterize Fe rich Fe-Zr-B amorphous alloys have been used to describe the observed results.     

Preference orientation and magnetic properties of CoxFe3−xO4 nanocrystalline thin films on quartz substrate

Nanocrystalline spinel ferrite thin films of Co_xFe_3−xO₄ (x=0.3$x=0.3$, 0.5, 0.8, and 1.0) have been prepared by RF sputtering on quartz substrate without a buffer layer at room temperature and annealed at the temperature range from 200 to 600 °C in air. The as-sputtered films exhibit the preferred orientation and the high magnetization and coercivity. After annealing, the preferred orientations become poor, but the magnetization and coercivity increase. The sample with a magnetization of 455 emu/cm³, a coercivity of 2.8 kOe, a remanence ratio of 0.72, and a maximum energy product of 2.4 MGOe has been obtained. The influence of Co ions and annealing temperature on the magnetic properties has been discussed.     

In-plane magnetization with high coercivity in terbium iron garnet thin films deposited on Pt/Si substrate by PLD

We report on the growth of terbium iron garnet (TbIG, Tb₃Fe₅O₁₂) thin films having anomalously large coercivity and in-plane easy axis of magnetization. The TbIG thin films were prepared at room temperature (RT) on Pt/Si(1 0 0) substrates by pulsed laser deposition technique. The films deposited at RT were X-ray amorphous and do not show any magnetic order. Annealing of the RT deposited film at 900 °C resulted into fully textured (532) TbIG film. Atomic force microscopy and cross-sectional scanning electron microscopy studies of the TbIG films showed good surface quality with an average surface roughness of 5.0 nm and thickness of about 300 nm, respectively. The M-H loops measured at 20 K for TbIG films, exhibit about an order of magnitude enhancement in the coercivity value (H_c) than the single crystal. In-plane and out-of-plane M-H loops revealed that the easy axis of the magnetization lies within the film’s plane. In-plane magnetization combining with large H_c value of the TbIG thin film may be of scientific interest for the possible applications.     

FePt L10 ordering and grain growth using millisecond pulse laser processing

The structural and magnetic properties of ∼12 nm thick FePt thin films grown on Si substrates annealed using a 1064 nm wavelength laser with a 10 ms pulse have been examined. The A1 to L1₀ ordering phase transformation was confirmed by electron and X-ray diffraction. An order parameter near 50% and a maximum coercivity of 12 kOe were obtained with laser energy densities of 25-32 J/cm². Grain growth, quantified by dark field transmission electron microscopy, occurred during chemical ordering at the laser pulse widths studied.     

Seedlayer interface enhanced magnetic anisotropy in CoPt (0 0 0 2)-textured films

The effects of interface roughness of Ta seedlayer on the structural and magnetic properties of Co₇₂Pt₂₈(20 nm)/Ru(30 nm)/Pt(2 nm)/Ta(5 nm)/glass were investigated. Uniaxial perpendicular magnetic anisotropy (8.6×10⁶ ergs/cc), coercivity (5.5 kOe) and nucleation field (−2.8 kOe) in the Co₇₂Pt₂₈ thin film sputter-deposited on relatively smooth surface of Ta seedlayer were achieved. The results showed that relatively smoother interface roughness of Ta seedlayer improved the CoPt/Ru (0 0 0 2) texture and magnetic properties.     

Granular L10 FePt (0 0 1) thin films for Heat Assisted Magnetic Recording

Granular L1₀ FePt (0 0 1) thin films were deposited on a Si substrate with Ta/MgO underlayers by rf sputtering. The effects of in-situ heating temperatures (350-575 °C), pressures (2-40 mTorr), and sputtering powers (15-75 W) on texture and microstructure were investigated for the FePt films. We obtained films with grain densities approaching 50 teragrains per in.², grains sizes down to 2.2 nm with center-to-center spacing of 4.2 nm and coercivity of 24 kOe. The order parameters for the L1₀ FePt thin films were derived and calculated to be as high as 0.91. Although the grain size is small, the spacing between grains is too large for practical heat assisted magnetic recording media. To reach the desired results, we propose that layer-by-layer growth should be promoted in the FePt layer by inserting another underlayer that provides a better lattice match to L1₀ FePt.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

Magnetic properties of amorphous Ge–Fe thin films

Thin films of Ge_100−xFe_x (x in at%) alloys, fabricated by thermal co-evaporation, have an amorphous structure at compositions x<∼40, although an unidentified crystalline phase with an FCC symmetry also exists at low Fe content. Magnetization versus temperature curves show that saturation magnetization is non-zero (1 to 2.5 emu/cm³) and remains nearly unchanged up to the highest measured temperature of 350 K. Magnetic hysteresis loops at room temperature show a typical ferromagnetic shape, complete saturation occurring by 1–2 kOe. These results may indicate ferromagnetic ordering at room temperature. No definite tendency is observed in the compositional dependence of saturation magnetization.     

Morphology and magnetic properties of CeCo5 submicron flakes prepared by surfactant-assisted high-energy ball milling

CeCo₅ permanent magnetic alloy has been processed by surfactant assisted high energy ball milling. Heptane and oleic acid were used as the solvent and surfactant, respectively. The amount of surfactant used was 50% by weight of the starting powder. The produced particles were deposited on a piece of copper (4 mm in length and width) under a magnetic field of 27 kOe applied along the copper surface and immobilized by ethyl α-cyanoacrylate. Scanning electron microscope pictures show that the particles are flakes, several μm in length and width and tens of nm in thickness. X-ray diffraction patterns and magnetic measurements prove that the flakes are crystalline with c-axes magnetic anisotropy. The easy magnetization axis is oriented perpendicular to the surface of the flake. A maximum coercivity of 3.3 kOe was obtained for the sample milled for 40 min.