Characterization of optical waveguide in Nd: LuVO4 crystals by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd:LuVO₄ crystals by triple-energy O³⁺-ion implantation at energies of 2.4, 3.0, and 3.6 MeV and doses of 1.4, 1.4, and 3.1×10¹⁴ ions/cm², respectively. The prism-coupling method is used to investigate the dark-mode property at a wavelength of 633 nm. The refractive index profiles of the waveguide are reconstructed by the reflectivity calculation method (RCM). The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which indicates the formation of non-leaky waveguide in the crystal.     

Characterization of optical planar waveguide in Ce:KNSBN crystal formed by triple-energy helium ion implantation

We report on the optical planar waveguide formation and modal characterization in a Ce:KNSBN crystal by triple helium ion implantation at energies of (2.0, 2.2 and 2.4 MeV) and fluences of (1.5, 1.65 and 2.25) × 10¹⁵ cm⁻². The prism-coupling method is used to investigate the dark-line spectroscopy at wavelength of 632.8 and 1539 nm, respectively. The refractive index profiles of the waveguide are reconstructed by an effective refractive index method. It is found that the ion-beam irradiation creates slight increase of extraordinary index whilst decreases ordinary one in the guide region. The modal analysis shows, at wavelength of 632.8 nm, the fields of one TE and three TM modes are well restricted in the guiding region, which means the formation of non-leaky waveguide in the crystal. The damping coefficients of the waveguide are 0.6 and 1.6 cm⁻¹ for ordinary and extraordinary polarized light at 632.8 nm, respectively.     

Well-confined Yb:GdVO4 laser waveguide formed by MeV C ion implantation

The planar waveguide in x-cut Yb:GdVO₄ crystal has been fabricated by 6.0 MeV carbon ion implantation with the fluence of 1 × 10¹⁴ ions/cm² at room temperature. The modes of the waveguide were measured by the prism-coupling method with the wavelength of 633 nm and 1539 nm, respectively. An enhanced ordinary refractive index region was formed with a width of about 4.0 μm beneath the sample surface to act as a waveguide structure. By performing a modal analysis on the observed transverse magnetic polarized modes, it was found that all the transverse magnetic polarized modes can be well-confined inside the waveguide. Strong Yb-related photoluminescence in Yb:GdVO₄ waveguide has been observed at room temperature, which reveals that it exhibits possible applications for integrated active photonic devices.     

The optical properties of planar waveguides in LiB3O5 crystals formed by Cu implantation

A planar optical waveguide has been formed in a LiB₃O₅ crystal using 6.0 MeV Cu⁺-ions with a dose of 1 × 10¹⁵ ions/cm² at room temperature. Possible propagating modes were measured at a wavelength of 633 nm using the prism-coupling method. The refractive index profiles of the waveguide were reconstructed by an effective refractive index method and the beam propagation method was used to investigate the properties of the propagation modes in the formed waveguide. The results suggest that the fundamental TE₀ and TM₀ modes may be well-confined and propagate a longer distance inside the waveguide. The implantation process was also simulated using the transport of ions in matter code (TRIM), which indicates that the nuclear energy deposition may be the main factor for the refractive index change.     

Characterization of laser waveguides in Nd:CNGG crystals formed by low fluence carbon ion implantation

We report on Nd:CNGG active planar waveguides produced by 6.0 MeV carbon ion implantation at fluence from 1 × 10¹⁴ ions/cm² to 8 × 10¹⁴ ions/cm². The refractive index profiles, which were reconstructed according to the measured dark mode spectroscopy, showed that the refractive indices had negative changes in the surface region, forming typical barrier waveguide. The width of waveguide structure induced by carbon ion implantation is ∼3.8 μm. The typical barrier-shaped distribution may be mainly due to the nuclear energy deposition of the incident ions into the substrate. By performing a modal analysis on the observed TE modes, it was found that the TE₀ and TE₁ modes can be well-confined inside the waveguide.     

Fabrication of waveguides in Yb:YCOB crystal by MeV oxygen ion implantation

Oxygen ions with energies of 6.0 or 3.0 MeV were implanted into y-cut Yb:YCOB crystals at fluences ranging from 5.0 × 10¹³ to 2.0 × 10¹⁵ ions/cm² at room temperature, forming optical planar waveguide structures. Dark-mode line spectroscopy was applied at two wavelengths, 633 and 1539 nm, in various excitation configurations, showing strong enhancement of one of the indices (n_x) in the implanted near surface. The n_x refractive index profile is reconstructed by a reflectivity calculation method and compared to the ion energy losses profiles deduced from SRIM-code simulation. Moreover, the near-field patterns were imaged by an end-fire coupling arrangement.     

Optical waveguide with homogeneous refractive index profile in LiNbO3 by double-low-energy Oxygen ion implantation

We report on the formation of the planar waveguide by 550 keV O ion followed by 250 keV O ion implantation in lithium niobate (LiNbO₃), at fluences of 6 × 10¹⁴ ions/cm² and 3 × 10¹⁴ ions/cm², respectively. The Rutherford backscattering/channeling spectra have shown the atomic displacements in the damage region before and after annealing. A broad and nearly homogeneous damage layer has been formed by double-energy ion implantation after annealing. Both the dark mode spectra and the data of refractive index profile verified that the extraordinary refractive index was enhanced in the ion implanted region of LiNbO₃. A homogeneous near-field intensity profile was obtained by double-low-energy ion implantation. There is a reasonable agreement between the simulated modal intensity profile and the experimental data. The estimated propagation loss is about 0.5 dB/cm.     

Comparison of gold and silver dispersion laws suitable for FDTD simulations

We report optical planar waveguide formation and modal characterization in β-BaB₂O₄ crystals by Cu²⁺-ion implantation at an energy of 3.0 MeV and doses of ∼ 10¹⁴ ions/cm². The prism-coupling method was used to investigate the dark-mode property at wavelengths of 633 nm and 1539 nm. The refractive-index profile of the waveguide was reconstructed by an effective refractive index method. The modal analysis indicates that the fields of TM modes can be well restricted in the guiding region, which means the formation of a non-leaky waveguide in the crystal. The results show that the β-BaB₂O₄ waveguides may be used in the application of high efficiency frequency conversion. PACS 61.80.Jh; 42.70.Mp; 42.65.Wi     

Determination of nonlinear coefficient and group-velocity-dispersion of bismuth-based high nonlinear optical fiber by four-wave-mixing

Nonlinear coefficient and group-velocity-dispersion of bismuth-based nonlinear fibers were determined by four-wave-mixing measurements. The wavelength dependence of refractive index of bulk bismuth-based glasses was also measured to estimate the material dispersion and waveguide dispersion. A newly developed bi-directional four-wave-mixing configuration enabled us to determine all fiber parameters simultaneously. The obtained fiber nonlinearity γ ∼ 1000 W⁻¹ km⁻¹ of bismuth-based nonlinear fiber is the highest one in the step-index fiber made of oxide glasses as expected from a high refractive index at 1550 nm. Dispersion analysis reveals that the both material dispersion and waveguide dispersion affect to the large group-velocity-dispersion of bismuth-based nonlinear fiber.     

Reconstruction of extraordinary refractive index profile of O ion-implanted LiNbO3 single-mode channel waveguide based on beam propagation method and image processing

A method bases on beam propagation method and image processing is brought forward to reconstruct the extraordinary refractive index profile of the ion-implanted single-mode channel waveguide in lithium niobate. Channel waveguide is formed by O²⁺ ion implantation at three energies of (3.0, 3.6 and 4.5 MeV) and respective doses of (1.8, 2.2 and 4.8) × 10¹⁴ ions/cm² in vacuum at room temperature. Only one enhanced-index mode is observed for extraordinary light at 1539 nm by prism-coupling method. TRIM’98 code is used to simulate the damage profile in channel waveguide. The modes pattern of TE and TM are measured by use of end-face coupling method.     

High speed all-silicon optical modulator

Electrorefractive effect is experimentally demonstrated in an all-silicon optical structure. A highly doped Si P⁺ layer is embedded in the intrinsic region of a PIN diode integrated in a SOI waveguide. Holes are confined at equilibrium around the P⁺ layer. By applying a reverse bias to the diode, electrical field sweeps the carriers out of the active region. Free carrier concentration variations are responsible for local refractive index variations leading to an effective index variation of the waveguide optical mode and to an optical absorption variation. As a figure of merit, the product V_πL_π, determined from the measured effective index variation, is equal to 3.1 V cm. Furthermore, the device performances have theoretically been investigated. Estimations show that V_πL_π as small as 1 V cm are feasible using optimized structures. Response times lower than 2 ps are predicted, which gives the possibility to achieve very high-speed modulation. Furthermore, a temperature increases from 300 to 400 K does not change the index variation amplitude, and despite the carrier mobility reduction, response times are still lower than 2 ps.     

Femtosecond laser embedded grating micromachining of flexible PDMS plates

We report on the femtosecond laser micromachining of photo-induced embedded diffraction grating in flexible Poly (Dimethly Siloxane) (PDMS) plates using a high-intensity femtosecond (130 fs) Ti: sapphire laser (λ_p = 800 nm). The refractive index modifications with diameters ranging from 2 μm to 5 μm were photo-induced after the irradiation with peak intensities of more than 1 × 10¹¹ W/cm². The graded refractive index profile was fabricated to be a symmetric around from the center of the point at which femtosecond laser was focused. The maximum refractive index change (Δn) was estimated to be 2 × 10⁻³. By the X-Y-Z scanning of sample, the embedded diffraction grating in PDMS plate was fabricated successfully using a femtosecond laser.     

The fabrication of polymer-based evanescent optical waveguide for biosensing

A polymer waveguide was fabricated to amplify the evanescent optical field for biosensing. The structure of waveguide was designed to propagate a normal single mode at the input and output regions for low loss beam coupling and propagation. A sensing region was formed in the middle of the waveguide to activate the evanescent mode and to induce high birefringence by depositing a thin dielectric film with a high refractive index on a single mode waveguide. A polymer waveguide with the dimensions of 7 μm-width and 2.5 μm-thickness was fabricated by photolithography and dry-etching. The active region of the TiO₂ thin film was fabricated with the dimensions of 20 mm-length, 20 nm-thickness and 2 mm-tapered tail. A polarimetric interference technique was used to evaluate the evanescent waveguide biosensor, and biomaterial such as glycerol was tested. The sensitivity of the sensor increased with increasing TiO₂ film thickness. For the fabricated waveguide with a 20 nm-thick TiO₂ film, the measured index change to the lead phase variation of 2π was 1.8 × 10⁻⁴.     

Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals

Transmission and reflection measurements in the wavelength region 450-1100 nm were carried out on Tl₄In₃GaS₈-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52 eV, respectively. The rate of change of the indirect band gap with temperature dE_gi/dT=-6.0×10⁻⁴ eV/K was determined from transmission measurements in the temperature range of 10-300 K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.44 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.87 eV, 26.77 eV, 8.48×10¹³ m⁻² and 2.55, respectively.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

The dependence of complex refractive index for four-level atom on radiation frequencies

The spectral analysis of refractive index for four-level configuration is done for dye molecules with a Gaussian form of coincident mirror-symmetric absorption and emission bands in both principal singlet?singlet and excited triplet?triplet channels. The optimum values of extinction coefficient in both channels are achieved at frequency tuning near the center of absorption band for each channel. The radiation frequencies in principal η₁₂ ? ±2 and in excited ?1 < η₃₄ < 1 channels are required to achieve the extreme values of refractive index in principal channel. The extreme values of refractive index in excited channel occur at frequencies ?1 < η₁₂ < 1 and η₃₄ ? ±1.4.     

Broadband photoluminescence from pulsed laser deposited Er2O3 films

Photoluminescence (PL) with the bandwidth of 45 nm (1523-1568 nm at the level of 3 dB) was observed in amorphous Er₂O₃ films grown on to the quartz substrate by pulsed laser ablation of erbium oxide stoichiometric target. Optical transmission spectrum has been fitted to Swanepoel formula to determine the dispersion of refractive index and to extract resonance absorption peaks at 980 and 1535 nm. The maximum gain coefficient of 800 dB/cm at 1535 nm was estimated using McCumber theory and experimental spectrum of the resonance absorption. In 5.7 mm-long waveguide amplifier a theory predicts the spectral gain of 20 dB with 1.4 dB peak-to-peak flatness in the bandwidth of 31 nm (1532-1563 nm) when 73% of Er³⁺ ions are excited from the ground state to the ⁴I_13/2 laser level. Strong broadband PL at room temperature and inherently flat spectral gain promise Er₂O₃ films for ultra-short high-gain optical waveguide amplifiers and integrated light circuits.     

Waveguide structures written in SF57 glass with fs-laser pulses above the critical self-focusing threshold

Waveguide writing with femtosecond (fs) laser pulses in glasses is compromised by uncontrollable non-linear propagation phenomena for powers exceeding a certain threshold, P_cr, which is inversely proportional to the material linear and non-linear refractive indices, n₀ and n₂, respectively. We have studied the behaviour of a commercial glass, Schott SF57, with high values of n₀ and n₂ when it is processed above P_cr with 800 and 1260 nm, 100 fs laser pulses to produce waveguide structures. Two types of structures, longitudinal (l-) and transversal (t-) ones depending on the sample translation, were obtained. In both of them, material damage surrounded by guiding regions was generated. We attribute the formation of the guiding regions of increased refractive index to the high local pressure reached in the focal volume where catastrophic damage occurs. This pressure can be high enough to compress the material nearby thus generating regions with a permanent refractive index increase up to 5 × 10⁻⁴. The efficiency of the guiding region is conditioned by the pulse energy. Mode profile analyses reveal double-sided exponential guided modes in the l-waveguides. As an alternative route to obtain suitable mode shapes and, simultaneously, to increase the coupling efficiency, the use of multiple structures has been investigated. Various l-structures have been written close to each other generating a region of increased refractive index large enough to effectively support a Lorentzian mode at 633 nm.     

Synthesis and investigation of nonlinear optical properties of semiconductor ZnS nanoparticles

ZnS nanoparticles were prepared by a simple chemical method and using PVP (poly vinylpyrrolidone) as capping agent. The sample was characterized by UV-vis spectrophotometer, X-ray diffraction (XRD) and Z-scan technique. XRD pattern showed that the ZnS nanoparticles had zinc blende structure with an average size of about 2.18 nm. The value of band gap of these nanoparticles was measured to be 4.20 eV. The nonlinear optical properties of ZnS nanoparticles in aqueous solution were studied by Z-scan technique using CW He-Ne laser at 632.8 nm. The nonlinear absorption coefficient (β) was estimated to be as high as 3.2×10⁻³ cm/W and the nonlinear refractive index (n₂) was in order of 10⁻⁸ cm²/W. The sign of the nonlinear refractive index obtained negative that indicated this material exhibits self-defocusing optical nonlinearity.     

Optical and gas sensing properties of thick TiO2 films grown by laser deposition

In this work the optical and the gas sensing properties of thick TiO₂ waveguide films, produced by pulsed laser deposition, were investigated by m-line spectroscopy. The films were deposited on (0 0 1) SiO₂ substrates at temperature of 100 °C. The thickness of the films was measured to be in the range from 650 to 1900 nm and the roughness increases from 5 to 14.6 nm. High quality mode spectra, consisted of thin and bright TE and TM modes, were observed in the films with thickness up to 1200 nm. All the films revealed anisotropic optical properties. Gas sensitivity of the films to CO₂ was examined at room temperature on the basis of the variations of the refractive index. CO₂ concentration of 3 × 10⁴ ppm was detected, which corresponds to a refractive index variation of about 1 × 10⁻⁴. The crystal structure and the optical transmittance of the films were also presented and discussed.