Structural,optical and dielectric properties of Ni substituted NdFeO3

Present study reports the structural, optical and dielectric properties of Ni substituted NdFe_1−xNi_xO₃ (0 ≤ x ≤ 0.5) compounds prepared through the ceramic method. X-ray diffraction (XRD) confirmed an orthorhombic crystal structure of all the samples. Both unit cell volume and grain size were found to decrease with an increase in Ni concentration. Morphological study by Scanning electron microscope (SEM) shows less porosity with Ni substitution in present system. From UV–vis spectroscopy, the optical band gap was found to increase with Ni doping. This observed behavior was explained on the basis of reduction in crystallite size, unit cell volume and its impact on the crystal field potential of the system after Ni substitution. The dielectric properties (?′ and tanδ) as a function of frequency or temperature, and the ac electrical conductivity (σ_ac) as a function of frequency have been studied. Hopping of charge carriers between Fe²⁺ → Fe³⁺ ions and Ni²⁺ → Ni³⁺ ions are held responsible for both electrical and dielectric dispersion in the system. Wide optical band gap and a very high dielectric constant of these materials promote them to be a suitable candidate for memory based devices in electronic industry.     

High temperature thermoelectric properties of Nb-doped ZnO ceramics

Solid-state reaction processing technique was used to prepare Zn_xNb_1−xO (0≤x≤0.02) polycrystalline bulk samples. In the present study, we find that their lattice parameters a and c tend to decrease with increasing amount of Nb additive. The electrical conductivity of all the Zn_1−xNb_xO samples increased with increasing temperature, indicating a semiconducting behavior in the measured temperature range. The addition of Nb₂O₅ to ZnO led to an increase in the electrical conductivity and a decrease in the absolute value of the Seebeck coefficient. The best performance at 1000 K has been observed for nominal 0.5 at% Nb-doped ZnO, with an electrical resistivity of about 73.13 (S cm⁻¹) and Seebeck coefficient of ∼257.36 μV K⁻¹, corresponding to a power factor (S²σ) of 4.84×10⁻⁴ Wm⁻¹ K⁻². The thermal conductivity, κ, of the oxide decreased as compared to pure ZnO. The figure of merit ZT values of ZnO-doped Nb₂O₅ samples are higher than the ZnO pure sample, demonstrating that the Nb₂O₅ addition is fairly effective for enhancing thermoelectric properties.     

Growth, structural and optical properties of non-stoichiometric CuIn(S1−xSex)2 thin films deposited by solution growth technique for photovoltaic application

Polycrystalline thin films of p-CuIn(S_1−xSe_x)₂ have been deposited by a solution growth technique. The deposition parameters such as pH, temperature and time have been optimized. In order to achieve uniformity of thin film, triethanolamine (TEA) has been used. As deposited films have been annealed at 450 °C in air for 5 min. The surface morphology, compositional ratio, structural properties have been studied by SEM, EDAX and XRD technique, respectively. It has been found that films have chalcopyrite structure with the lattice parameters a=5.28 Å and c=11.45 Å at composition x=0.5. The grain size of all composition x measured from SEM and XRD is varied in between 450 and 520 nm. The optical transmittance spectra have been recorded in the range 350-1000 nm. The absorption coefficient has been calculated at the absorption edge for each of the composition x and it is in the range of 10⁴ cm⁻¹. The material shows the direct allowed band gap, which varies from 1.07 to 1.44 eV with change in composition (0≤x≤1.0). These parameters are useful for the photovoltaic application.     

Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD

This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si_1−xGe_x) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The ³¹P⁺ and ¹¹B⁺ doped poly-Si_1−xGe_x films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si_1−xGe_x films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si_1−xGe_x films, suitable as a gate electrode material for submicron CMOS devices.     

Effect of WO3 on EPR, structure and electrical conductivity of vanadyl doped WO3·M2O·B2O3 (M=Li, Na) glasses

Glasses with composition xWO₃·(30−x)M₂O·70B₂O₃ (M=Li, Na; 0≤x≤15) doped with 2 mol% V₂O₅ have been prepared using the melt-quench technique. The electron paramagnetic resonance spectra have been recorded in X-band (ν≈9.14 GHz) at room temperature (RT). The spin Hamiltonian parameters, dipolar hyperfine coupling parameter and Fermi contact interaction parameter have been calculated. It is observed that the resultant resonance spectra contain hyperfine structures (hfs) only due to V⁴⁺ ions, which exist as VO²⁺ ions in octahedral coordination with a tetragonal compression in the present glass system. The tetragonality increases with WO₃:M₂O ratio and also there is an expansion of 3d_xy orbit of unpaired electron in the vanadium ion. The study of IR transmission spectra over a range 400-4000 cm⁻¹ depicts the presence of WO₆ group. The DC conductivity (σ) has been measured in the temperature range 423-623 K and is found to be predominantly ionic.     

Physical and magnetic properties of highly aluminum doped strontium ferrite nanoparticles prepared by auto-combustion route

Highly Al³⁺ ion doped nanocrystalline SrFe_12−xAl_xO₁₉ (0≤x≤12), were prepared by the auto-combustion method and heat treated in air at 1100 °C for 12 h. The phase identification of the powders performed using x-ray diffraction show presence of high-purity hexaferrite phase and absence of any secondary phases. With Al³⁺ doping, the lattice parameters decrease due to smaller Al³⁺ ion replacing Fe³⁺ ions. Morphological analysis performed using transmission electron microscope show growth of needle shaped ferrites with high aspect ratio at Al³⁺ ion content exceeding x≥2. Al³⁺ substitution modifies saturation magnetization (M_S) and coercivity (H_C). The room temperature M_S values continuously reduced while H_C value increased to a maximum value of 18,100 Oe at x=4, which is an unprecedented increase (∼321%) in the coercivity as compared to pure Sr-Ferrite. However, at higher Al³⁺ content x>4, a decline in magnetization and coercivity has been observed. The magnetic results indicate that the best results for applications of this ferrite will be obtained with an iron deficiency in the stoichiometric formulation.     

Structure and RT ferromagnetism of Fe-doped AlN films

Al_1−xFe_xN_1−δ thin films with 0 ≤ x ≤ 13.6% were deposited by dc magnetron co-sputtering at room temperature (RT). It is found that Fe atom will substitutes the Al atom in the lattice when x ≤ 1.2%, while it will embed into the interstice of the lattice at larger Fe content. RT ferromagnetism was observed in all doped samples. A maximum saturated magnetization 2.81 emu/cm³ of the film is found to be induced by AlFeN ternary alloy when x = 1.2%.     

Enhanced ferroelectric properties of (Pb0.90La0.10)Ti0.975O3 multilayered thin films prepared by RF magnetron sputtering

The (Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PLT/PT), PbTiO₃/(Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PT/PLT/PT) multilayered thin films with a PbO_x buffer layer were in situ deposited by RF magnetron sputtering at the substrate temperature of 600 °C. With this method, highly (1 0 0)-oriented PLT/PT and PT/PLT/PT multilayered thin films were obtained. The PbO_x buffer layer leads to the (1 0 0) orientation of the films. The dielectric, ferroelectric and pyroelectric properties of the PLT multilayered thin films were investigated. It is found that highly (1 0 0)-oriented PT/PLT/PT multilayered thin films possess higher remnant polarization 2P_r (44.1 μC/cm²) and better pyroelectric coefficient at room temperature p (p = 2.425 × 10⁻⁸ C/cm² K) than these of PLT and PLT/PT thin films. These results indicate that the design of the PT/PLT/PT multilayered thin films with a PbO_x buffer layer should be an effective way to enhance the dielectric, ferroelectric and pyroelectric properties. The mechanism of the enhanced ferroelectric properties was also discussed.     

Laser synthesis of semiconductor nanostructures with narrow band gap

Semiconductor nanostructures with narrow band gap were synthesized by means of laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors [Fe(CO)₅] under the action of Ar⁺ laser radiation (λ_L = 488 nm) on the Si substrate surface. The temperature dependence of the specific conductivity of these nanostructures in the form of thin films demonstrated typical semiconductor tendency and gave the possibility to calculate the band gap for intrinsic conductivity (E_g) and the band gap assigned for impurities (E_i), which were depended upon film thickness and applied electrical field. Analysis of deposited films with scanning electron microscopy (SEM) and atomic force microscopy (AFM) demonstrated their cluster structure with average size not more than 100 nm. Semiconductor properties of deposited nanostructures were stipulated with iron oxides in different oxidized phases according to X-ray photoelectron spectroscopy (XPS) analysis.These deposited nanostructures were irradiated with Q-switched YAG laser (λ_L = 1064 nm) at power density about 6 × 10⁷ W/cm². This irradiation resulted in the crystallization process of deposited films on the Si substrate surface. The crystallization process resulted in the synthesis of iron carbide-silicide (FeSi_2−xC_x) layer with semiconductor properties too. The width of the band gap E_g of the synthesized layer of iron carbide-silicide was less than for deposited films based on iron oxides Fe₂O_3−x (0 ≤ x ≤ 1).     

Effect of composition and thermal annealing on the absorption and electrical conduction of Se85−xTe15Sbx glasses

The optical absorption of the as-prepared and thermally annealed Se_85−xTe₁₅Sb_x (0≤x≤9) thin films was measured. The mechanism of the optical absorption follows the rule of non-direct transition. The optical energy gap (E₀) decreased from 1.12 to 0.84 eV with increasing Sb content of the as-prepared films from 0 to 9 at.%. The as-prepared Se₇₆Te₁₅Sb₉ films showed an increase in (E₀) with increasing the temperature of annealing in the range above T_g (363 K). The electrical conductivity of the as-prepared and annealed films was found to be of Arrhenius type with temperature in the range 300-360 K. The activation energy for conduction was found to decrease with increasing both the Sb content and temperature of annealing. The results were discussed on the basis of the lone-pair electron effect and of amorphous crystalline transformation.     

Adsorption and photocatalytic degradation of methylene blue on Zn1−xCuxS nanoparticles prepared by a simple green method

Nanoparticles of Zn_1−xCu_xS with various dopant contents (0 ≤ x ≤ 0.15) were prepared in water by refluxing for 90 min at about 95 °C. Powder X-ray diffraction (XRD) patterns of the nanoparticles demonstrate that loading of Cu²⁺ ions does not change the crystal structure of ZnS. Scanning electron microscopy (SEM) images demonstrate that size of the nanoparticles decreases with increasing Cu²⁺ ions. UV-Vis diffuse reflectance spectra (DRS) of the nanoparticles show significant absorption in visible light region. Adsorption capacity of the nanoparticles for methylene blue (MB) increases with mole fraction of copper ions. Photocatalytic activity of the nanoparticles toward photodegradation of MB was evaluated under visible light irradiation. The results indicate that Zn_0.85Cu_0.15S nanoparticles exhibit highest photocatalytic activity among the prepared samples. Moreover, effects of refluxing time applied for preparation of the nanoparticles and calcination temperature were investigated.     

Combinatorial synthesis and optical characterization of alloy and superlattice films based on SrTiO3 and LaAlO3

We have grown alloy and superlattice films consisting of SrTiO₃ (STO) and LaAlO₃ (LAO) by pulsed laser deposition using composition-spread technique. All the (STO)_x(LAO)_1−x (0 ≤ x ≤ 1) alloy and superlattice films exhibited a single-phase perovskite structure. The optical properties of these films were characterized by absorption spectroscopy at room temperature. The spectra show a broad absorption due to O 2p-Ti 3d(t_2g) transition in an ultraviolet region. We found that absorption edges of both alloy and superlattice films systematically shifted to higher energy with increasing LAO composition. Clear difference was observed in the composition dependence of the indirect and a direct band edges.     

Effects of Cr doping in bilayered manganite LaSr2Mn2O7: Resistivity, thermoelectric power, and thermal conductivity

Systematic studies of resistivity, thermoelectric power, and thermal conductivity have been performed on polycrystalline bilayered manganites LaSr₂Mn_2−xCr_xO₇ (0≤x≤0.2). It is found that the temperature dependence of both Seebeck coefficient S(T) and resistivity ρ(T) in the high temperature region follows the small polaron transport mechanism for all the samples. But in the low temperature region, variable-range-hopping (VRH) model matches the experimental data better. In addition, the maximum of absolute S(T) at low temperatures is gradually suppressed for the sample with Cr-doping level of x>0.04, implying that a new FM order probably arises. With decreasing the temperatures further, S(T) has a sign change and becomes positive for the sample with Cr-doping level of x>0.04, indicating that there may occur a variation of the type of charge carrier. As to thermal conduction κ(T), the low-temperature peak is suppressed due to Cr-doping. The variation of κ(T) is analyzed based on the combined effect due to the suppression of local Mn³⁺O₆ Jahn-Teller (JT) lattice distortion because of the substitution of Cr³⁺ ions for Mn³⁺ ions, which results in the increase in thermal conduction, and the introduction of the disorder due to Cr-doping, which contributes to the decrease in thermal conduction.     

Influence of annealing temperature on structural, optical and magnetic properties of Mn-doped ZnO thin films prepared by sol-gel method

Thin films of Zn_1−xMn_xO (x=0.01) diluted magnetic semiconductor were prepared on Si (1 0 0) substrates by the sol-gel method. The influence of annealing temperature on the structural, optical and magnetic properties was studied by X-ray diffraction (XRD), atom force microscopy (AFM), photoluminescence (PL) and SQUID magnetometer (MPMS, Quantum Design). The XRD spectrum shows that all the films are single crystalline with (0 0 2) preferential orientation along c-axis, indicating there are not any secondary phases. The atomic force microscopy images show the surfaces morphologies change greatly with an increase in annealing temperature. PL spectra reveal that the films marginally shift the near band-edge (NBE) position due to stress. The magnetic measurements of the films using SQUID clearly indicate the room temperature ferromagnetic behavior, and the Curie temperature of the samples is above room temperature. X-ray photoelectron spectroscopy (XPS) patterns suggest that Mn²⁺ ions were successfully incorporated into the lattice position of Zn²⁺ ions in ZnO host. It is also found that the post-annealing treatment can affect the ferromagnetic behavior of the films effectively.     

Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4

Room temperature photoluminescence quantum efficiency of the alloy of Ca_1−xEu_xGa₂S₄ was measured as a function of x, and was found to be nearly unity under excitation at peak wavelength of excitation spectrum (510 nm) in the x range of 0.01≤x≤0.2. At larger x values, it tends to decrease, but still as high as 30% for stoichiometric compound EuGa₂S₄. Taking these backgrounds into account, pump-probe experiments were done with Ca_1−xEu_xGa₂S₄ for searching optical gain at x=0.2. The optical gain of nearly 30 cm⁻¹ was confirmed to exist, though the pumping induced transient absorption which seems to limit the higher gain was found.     

The important role of Mn in the room-temperature ferromagnetism of Mn-doped GaN films

Mn-doped GaN films (Ga_1−xMn_xN) were grown on sapphire (0 0 0 1) using Laser assisted Molecular Beam Epitaxy (LMBE). High-quality nanocrystalline Ga_1−xMn_xN films with different Mn concentration were then obtained by thermal annealing treatment for 30 min in the ammonia atmosphere. Mn ions were incorporated into the wurtzite structure of the host lattice by substituting the Ga sites with Mn³⁺ due to the thermal treatment. Mn³⁺, which is confirmed by XPS analysis, is believed to be the decisive factor in the origin of room-temperature ferromagnetism. The better room-temperature ferromagnetism is given with the higher Mn³⁺ concentration. The bound magnetic polarons (BMP) theory can be used to prove our room-temperature ferromagnetic properties. The film with the maximum concentration of Mn³⁺ presents strongest ferromagnetic signal at annealing temperature 950 °C. Higher annealing temperature (such as 1150 °C) is not proper because of the second phase Mn_xGa_y formation.     

Titanium oxynitride thin films sputter deposited by the reactive gas pulsing process

DC reactive sputtering was used to successfully make thin films of titanium oxynitride using titanium metallic target, argon as plasma gas and nitrogen and oxygen as reactive gases. The nitrogen partial pressure was kept constant during every deposition whereas oxygen flow rate was pulsed using a square pattern. The study consisted in analysing the influence of the shape of the pulsed rate on physical properties of these films. In order to adjust the metalloid concentration to get films with a wide range of oxygen-to-nitrogen ratios, the reactive gas pulsing process (RGPP) was used. In this process, the oxygen flow switches “on” and “off” periodically according to a duty cycle α = t_ON/T. Electrical conductivity of films measured against temperature was gradually modified from metallic (σ_300K = 4.42 × 10⁴ S m⁻¹) to semi-conducting behaviour (σ_300K = 7.14 S m⁻¹) with an increasing duty cycle. Mechanical properties like nanohardness (H_n) and reduced Young's modulus (E_r) of the films were investigated. Experimental values of H_n and E_r obtained by nanoindentation at 10% depth ranged from 15.8 to 5.2 GPa and from 273 to 142 GPa, respectively. Evolutions of H_n and E against duty cycle were similar. A regular decrease was observed for duty cycle α ≤ 25% corresponding to the occurrence of TiO_xN_y phase. Higher duty cycles led to the smallest values of H_n and E and correlated with TiO₂ compound composition. At last, the colour variation of these titanium oxynitrides was investigated as a function of α in the L^*a^*b^* colour space. It was related to the chemical composition of the films.     

A combinatorial approach to the discovery and optimization of YCa4O(BO3)3-based luminescent materials

Thin films of YCa₄O(BO₃)₃ (YCOB)-based new luminescent materials were explored by the combinatorial pulsed laser deposition (PLD) method which enabled us to fabricate continuous composition spread film libraries. Strong red and green luminescence were found in the Y_1−xEu_xCOB (0 ≤ x ≤ 1), (YEuCOB) and Y_1−yTb_yCOB (0 ≤ y ≤ 1) (YTbCOB) films, respectively. The film libraries were characterized by photoluminescence (PL), PL decay, an electron-probe microanalyzer and an electron diffraction analysis. The luminescent intensities in the amorphous film libraries strongly depended on the chemical composition of each rare-earth (RE) ion. The optimum concentration of rare-earth ions in YEuCOB and YTbCOB were experimentally determined to be Eu = 7.5% and Tb = 20-30%, respectively.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

Electrical conductivity of (Er,U)O2+x and (Ce,U)O2+x

The electrical conductivity (σ) of (Er_yU_1−y)O_2+x (y=0.06, 0.20) and (Ce_yU_1−y)O_2+x (y=0.05, 0.15, 0.25) has been measured as a function of oxygen partial pressure in the temperature range of 1100≤T/°C≤1300 by a d.c. 4-probe method. Both of the oxides exhibited Po₂-regions where the electrical conductivity is independent of oxygen partial pressure, which indicates that doped Er and Ce exist as trivalent cations on uranium sites and fix the hole concentration by acting as electron acceptors, i.e. [h]=[Er′_U] and [h]=[Ce′_U], respectively. It is considered that strong oxidization tendency of uranium and reduction tendency of cerium simultaneously render the cerium ions exist exclusively as Ce³⁺ in the uranium dioxide. The electron-hole mobility of (Er_yU_1−y)O_2+x and (Ce_yU_1−y)O_2+x in the Po₂ region where σ is constant has been calculated by the combination of the electrical conductivity and charge carrier concentration; the activation energy (E_H) of each oxide has been obtained from the temperature dependence of the mobility. Small polaron hopping conduction mechanism was confirmed by small magnitude of the mobility (0.018-0.052 cm² V⁻¹ s⁻¹) and the activation energy (0.12-0.22 eV).