First-principles calculations of hydrogen molecule adsorption on Ti (0 0 0 1)-(2 × 1) surface

Adsorption of H₂ molecule on the Ti (0 0 0 1)-(2 × 1) surface was studied by density functional theory with generalized gradient approximation (GGA). The parallel and vertical absorption cases were investigated in detail by adsorption energy and electronic structure analysis, we obtained three stable configurations of FCC-FCC (the two H atoms adsorption on the two adjacent fcc sites of Ti (0 0 0 1) surface, respectively), HCP-HCP (the two H atoms adsorption on the two adjacent hcp sites of Ti (0 0 0 1) surface, respectively) and FCC-HCP (the one H atom adsorption on the fcc site and the other adsorption on the near hcp site) based on the six different parallel adsorption sites after the H₂ molecule dissociates. However, all the end configurations of four vertical adsorption sites were unstable, H₂ molecule was very easy to desorb from Ti surface. The H-H bond breaking and Ti-H bond forming result from the H₂ molecule dissociation. H-H bond breaking length ranges from 1.9 Å to 2.3 Å for different adsorption configurations due to the strong Ti-H bond forming. The H₂ dissociative approach and the end stable configurations formation in parallel adsorption processes are attributed to the quantum mechanics steering effects.     

Structure analysis of W(0 0 1)2 × 1-O surface at room and liquid nitrogen temperatures

Surface structure of O-adsorbed W(0 0 1) surface after annealing to 1200 K has been analyzed by low energy electron diffraction at 77 K as well as at room temperature. The optimum structure has tungsten missing rows and oxygen double rows. Furthermore, the R-factor is minimized at the structure that O atoms are adsorbed on one of the two different threefold hollow sites of the (1 1 0) facet appearing on the W(0 0 1)2 × 1 with missing row. However, the results suggest that two domains of O atoms adsorbed on both the two different threefold hollow sites coexist. Then, I-V curves have been analyzed as a function of the mixing ratio of the two domains having different O adsorption sites at room and low temperatures. The energy difference between these two sites has been estimated to be 6.5 meV from the temperature dependence of the mixing ratio.     

Hydrogen adsorption on GaAs(0 0 1)-c(4 × 4)

Exposure of the As-terminated GaAs(0 0 1)-c(4 × 4) reconstructed surface to atomic hydrogen (H) at different substrate temperatures (50-480 °C) has been studied by reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM). Hydrogen exposure at low temperatures (∼50 °C) produces a disordered (1 × 1) surface covered with AsH_x clusters. At higher temperatures (150-400 °C) exposure to hydrogen leads to the formation of mixed c(2 × 2) and c(4 × 2) surface domains with H adsorbed on surface Ga atoms that are exposed due to the H induced loss of As from the surface. At the highest temperature (480 °C) a disordered (2 × 4) reconstruction is formed due to thermal desorption of As from the surface. The results are consistent with the loss of As from the surface, either through direct thermal desorption or as a result of the desorption of volatile compounds which form after reaction with H.     

Low reactivity of molecular oxygen with Si(1 1 1)-c(2 × 8)

The adsorption of molecular oxygen on the c(2 × 8) reconstruction of quenched Si(1 1 1) surfaces has been studied at the atomic scale using scanning tunneling microscopy (STM) at room temperature (RT). It has been found that clean well reconstructed c(2 × 8) adatoms do not react with O₂ molecules but that a limited oxidation can start where adatom sites arranged in reconstructed structures are present. Comparison between O₂ adsorption on Si(1 1 1)-c(2 × 8) and Si(1 1 1)-7 × 7 reconstructions coexisting on the same quenched silicon surface has been carried out in detail. For each atomic site present on the surface the variation of reacted sites with exposure has been measured. For low O₂ exposures, bright and dark oxygen induced sites appear on the Si(1 1 1)-7 × 7, while Si(1 1 1)-c(2 × 8) does not oxidized at all. At high O₂ exposures, large oxidation areas have spread on the 7 × 7 reconstruction, preferentially on the faulted halves of the unit cell, and smaller oxidation areas induced by topological defects have grown all around clean un-reacted c(2 × 8) regions.     

Investigation of hydrogen interaction with the Si(1 1 1)-7 × 7 surface by STM with Bi/W tips

The STM technique with a special Bi/W tip was used to study the interaction of hydrogen atoms with the Si(1 1 1)-7 × 7 surface. The reactivity of different room temperature (RT) adsorption sites, such as adatoms (A), rest atoms (R), and corner holes (CH) was investigated. The reactivity of CH sites was found to be ∼2 times less than that of R and A sites. At temperatures higher than RT, hydrogen atoms rearrange among A, R, and CH sites, with increased occupation of R sites (T <  300 °C). Further temperature increase leads to hydrogen desorption, where its surface diffusion plays an active role. We discuss one of the possible desorption mechanisms, with the corner holes surrounded by a high potential barrier. Hydrogen atoms have a higher probability to overcome the desorption barrier rather than diffuse either into or out of the corner hole. The desorption temperature of hydrogen from CH, R, and A sites is about the same, equal to ∼500 °C. Also it is shown that hydrogen adsorption on the CH site causes slight electric charge redistribution over neighbouring adatoms, namely, increases the occupation of electronic states on A sites in the unfaulted halves of the Si(1 1 1)-7 × 7 unit cell. Based on these findings, the indirect method of investigation with conventional W tips was suggested for adsorbate interaction with CH sites.     

The interaction of carbon with Si(1 1 1):As and Si(1 1 1):H surfaces, a theoretical study

Density functional theory calculations have been performed to determine the adsorption site of carbon at the Si(1 1 1):As and Si(1 1 1):H surfaces at different coverages. The As- and H-passivated surfaces were simulated by replacing the topmost Si layer by As or by saturating the Si dangling bonds with hydrogen atoms, respectively. Different high symmetry sites were considered. Carbon was placed successively in the fourfold (T₄) or threefold coordinated (H₃), the ontop (T₁) sites or substituted for a Si atom in the S₅ position located underneath the Si adatom in the T₄ site. We found that the preferred carbon adsorption site depends on the coverage of the passivated surfaces. At low coverages i.e. at 1/16 ML and 1/3 ML, it prefers a distorted T₄ position whereas at 1 ML, it occupies an H₃ site. This contrasts with the clean surface where the most energetically favored site is the S₅ at all coverages. Carbon adsorption induces a significant change in the structural geometry of the surface atoms, leading to a charge re-arrangement in the surface layers.     

A theoretical investigation on Pt3Sn(1 0 2) surface alloy and CO-Pt3Sn(1 0 2) system

The adsorption properties of CO on experimentally verified stepped Pt₃Sn(1 0 2) surface were investigated using quantum mechanical calculations. The two possible terminations of Pt₃Sn(1 0 2) were generated and on these terminations all types of possible adsorption sites were determined. The adsorption energies and geometries of the CO molecule for all those sites were calculated. The most favorable sites for adsorption were determined as the short bridge site on the terrace of pure-Pt row of the mixed-atom-ending termination, atop site at the step-edge of the pure row of pure-Pt-ending termination and atop site at the step-edge of the pure-Pt row of the mixed-atom-ending termination. The results were compared with those for similar sites on the flat Pt₃Sn(1 1 0) surface considering the fact that Pt₃Sn(1 0 2) has terraces with (1 1 0) orientation. The LDOS analysis of bare sites clearly shows that there are significant differences between the electronic properties of Pt atoms at stepped Pt₃Sn(1 0 2) surface and the electronic properties of Pt atoms at flat (1 1 0) surface, which leads to changes in the CO bonding energies of these Pt atoms. Adsorption on Pt₃Sn(1 0 2) surface is in general stronger compared to that on Pt₃Sn(1 1 0) surface. The difference in adsorption strength of similar sites on these two surface terminations is a result of stepped structure of Pt₃Sn(1 0 2). The local density of states (LDOS) of the adsorbent Pt and C of adsorbed CO was utilized. The LDOS of the surface metal atoms with CO-adsorbed atop and of their bare state were compared to see the effect of CO chemisorption on the electron density distribution of the corresponding Pt atom. The downward shift in energy peak in the LDOS curves as well as changes in the electron densities of the corresponding energy levels indicate the orbital mixing between CO molecular orbitals and metal d-states. The present study showed that the adsorption strength of the sites has a direct relation with their LDOS profiles.     

Determination of a (4 × 4) structure formed on a Cu(0 0 1) surface by adsorption of calcium

The adsorption of calcium (Ca) atoms on a Cu(0 0 1) surface has been studied by low-energy electron diffraction (LEED) at 130, 300 and 400 K. It is found that a (4 × 4) was the only LEED pattern appeared at 400 K while a quasi-hexagonal structure was formed in a wide range of submonolayer coverage at 130 K. At 300 K, the (4 × 4) LEED spots were broad and weak. The (4 × 4) structure formed at 400 K was determined by a tensor LEED I-V analysis. It is a new-type of surface alloys consisting of five substitutional Ca atoms, nine surface Cu atoms, and two atomic vacancies in the unit cell. In spite of a quite large size-difference between Ca (3.94 Å) and Cu (2.55 Å) atoms, all Ca atoms are located at the substitutional sites. Among surface alloys so far reported, the atomic size ratio between Cu and Ca in the (4 × 4), 1.54, is the largest. Optimized structural parameters reveal that large lateral displacements of surface Cu atoms, being enabled by the appearance of the vacancies, allow the formation of the (4 × 4) structure.     

A theoretical study of hydrogen adsorption and diffusion on a W(1 1 0) surface

We have used density functional theory to investigate hydrogen adsorption and diffusion on a W(1 1 0) surface. Hydrogen adsorption structures were examined from low coverage to one monolayer, and a threefold hollow site was found to be the most stable site at all coverages. In contrast to previous assertions, the work function decrease is not due to electron transfer from the hydrogen atoms to the W surface, but due to electron depletion at the vacuum region above the hydrogen atoms. Hydrogen atoms can diffuse via short-bridge sites and long-bridge sites at a coverage of θ = 1.0. Although the calculated activation energy for hydrogen diffusion via a short-bridge site is as small as 0.05 eV, field emission microscope experiments have shown that the activation energy for hydrogen diffusion is about 0.20 eV, which agrees fairly well with our calculated value of the activation energy via a long-bridge site. This discrepancy can be related to hydrogen delocalization on the W(1 1 0) surface, which has been suggested by electron energy loss spectroscopy experiments.     

O2 dissociation on Pd(2 1 1) and Cu(2 1 1) surfaces

We have performed ab initio Density Functional Theory (DFT) based calculations to observe the reactivity of the Pd(2 1 1) and Cu(2 1 1) surfaces towards O₂. In order to properly address the adsorption dynamics, the static potential energy surface calculations have been complemented with first principles molecular dynamics calculations, which reveal interesting steering effects that complicate the dissociation dynamics. We have found that on both surfaces the step microfacets are very reactive and the dissociation of the O₂ molecule at room temperature occurs mostly on those sites.     

Adsorption of water on thin V2O3(0 0 0 1) films

V₂O₃(0 0 0 1) films have been grown epitaxially on Au(1 1 1) and W(1 1 0). Under typical UHV conditions these films are terminated by a layer of vanadyl groups as has been shown previously [A.-C. Dupuis, M. Abu Haija, B. Richter, H. Kuhlenbeck, H.-J. Freund, V₂O₃(0 0 0 1) on Au(1 1 1) and W(1 1 0): growth, termination and electronic structure, Surf. Sci. 539 (2003) 99]. Electron irradiation may remove the oxygen atoms of this layer. H₂O adsorption on the vanadyl terminated surface and on the reduced surface has been studied with thermal desorption spectroscopy (TDS), vibrational spectroscopy (IRAS) and electron spectroscopy (XPS) using light from the BESSY II electron storage ring in Berlin. It is shown that water molecules interact only weakly with the vanadyl terminated surface: water is adsorbed molecularly and desorbs below room temperature. On the reduced surface water partially dissociates and forms a layer of hydroxyl groups which may be detected on the surface up to T ∼ 600 K. Below ∼330 K also co-adsorbed molecular water is detected. The water dissociation products desorb as molecular water which means that they recombine before desorption. No sign of surface re-oxidation could be detected after desorption, indicating that the dissociation products desorb completely.     

Theoretical study of CO and Pb adsorption on the Ni(1 1 1) and Ni3Al(1 1 1) surfaces

Adsorption of CO molecules and Pb atoms on the Ni(1 1 1) and Ni₃Al(1 1 1) substrates is studied theoretically within an ab initio density-functional-theory approach. Stable adsorption sites and the corresponding adsorption energies are first determined for stoichiometric surfaces. The three-fold hollow sites (fcc for Pb and hcp for CO) are found most favourable on both substrates. Next, the effect of surface alloying by a substitution of selected topmost substrate atoms by Pb or Ni atoms on the adsorption characteristics is investigated. When the surface Al atoms of the Ni₃Al(1 1 1) substrate are replaced by Ni atoms, the Pb and CO adsorption energies approach those for a pure Ni(1 1 1) substrate. The Pb alloying has a more substantial effect. On the Ni₃Al(1 1 1) substrate, it reduces considerably adsorption energy of CO. On the Ni(1 1 1) substrate, CO binding strengthens slightly upon the formation of the Ni(1 1 1)p(2×2)-Pb surface alloy, whereas it weakens drastically when the Ni(1 1 1)-Pb surface alloy is formed.     

Oxygen-induced p(3 × 1) reconstruction of the W(1 0 0) surface

The oxidation of the W(1 0 0) surface at elevated temperatures has been studied using room temperature STM and LEED. High exposure of the clean surface to O₂ at 1500 K followed by flash-annealing to 2300 K in UHV results in the formation of a novel p(3 × 1) reconstruction, which is imaged by STM as a missing-row structure on the surface. Upon further annealing in UHV, this surface develops a floreted LEED pattern characteristic of twinned microdomains of monoclinic WO_x, while maintaining the p(3 × 1) missing-row structure. Atomically resolved STM images of this surface show a complex domain structure with single and double W〈0 1 0〉 rows coexisting on the surface in different domains.     

First principles study of H2S adsorption and dissociation on Fe(1 1 0)

We report first principles density functional theory (DFT) results of H₂S and HS adsorption and dissociation on the Fe(1 1 0) surface. We investigate the site preference of H₂S, HS, and S on Fe(1 1 0). H₂S is found to weakly adsorb on either the short bridge (SB) or long bridge (LB) site of Fe(1 1 0), with a binding energy of no more than 0.50 eV. The diffusion barrier from the LB site to the SB site is found to be small (∼0.10 eV). By contrast to H₂S, HS is predicted to be strongly chemisorbed on Fe(1 1 0), with the S atom in the LB site and the HS bond oriented perpendicular to the surface. Isolated S atoms also are predicted to bind strongly to the LB sites of Fe(1 1 0), where the SB is found to be a transition state for S surface hopping between neighboring LB sites. The minimum energy paths for H₂S and HS dehydrogenation involve rotating an H atom towards a nearby surface Fe atom, with the S-H bonds breaking on the top of one Fe atom. The barrier to break the first S-H bond in H₂S is low at 0.10 eV, and breaking the second S-H bond is barrierless, suggesting deposition of S on Fe(1 1 0) via H₂S is kinetically and thermodynamically facile.     

Adsorption of carbon monoxide on Pd(3 1 1) and (2 1 1) surfaces

Adsorption of carbon monoxide on Pd(3 1 1) and (2 1 1) stepped surfaces has been investigated by the extended London-Eyring-Polyani-Sato (LEPS) method constructed using a 5-parameter Morse potential. The calculated results show that there exist common characteristics of CO adsorption on the two surfaces. At low coverage, CO occupies threefold hollow site of the (1 1 1) terrace and is tilted with respect to the surface normal. Among the threefold hollow sites on the (1 1 1) terrace, the nearer the site is to the step, the greater is the influence of the step. The twofold bridge site on the (1 0 0) step is also a stable adsorption site at high coverage. Because of the different lengths of the (1 1 1) terraces, the (3 1 1) and (2 1 1) stepped surfaces have different characteristics. A number of new sites are exposed on the boundary regions, including the fourfold hollow site (H₄) of the (3 1 1) surface and the fivefold hollow site (H₅) of the (2 1 1) surface. At high coverage, CO resides in the H₅ site of the (2 1 1) surface, but the H₄ site of the (3 1 1) surface is not a stable adsorption site. This study further shows that the on-top site on the (1 0 0) step of Pd(3 1 1) is a stable adsorption site, but the same type of site on Pd(2 1 1) is not.     

The chemisorption of pentacene on Si(0 0 1)-2 × 1

Adsorption structures of the pentacene (C₂₂H₁₄) molecule on the clean Si(0 0 1)-2 × 1 surface were investigated by scanning tunneling microscopy (STM) in conjunction with density functional theory calculations and STM image simulations. The pentacene molecules were found to adsorb on four major sites and four minor sites. The adsorption structures of the pentacene molecules at the four major sites were determined by comparison between the experimental and the simulated STM images. Three out of the four theoretically identified adsorption structures are different from the previously proposed adsorption structures. They involve six to eight Si-C covalent chemical bonds. The adsorption energies of the major four structures are calculated to be in the range 67-128 kcal/mol. It was also found that the pentacene molecule hardly hopped on the surface when applying pulse bias voltages on the molecule, but was mostly decomposed.     

Initial stages of the autocatalytic oxidation of the InAs(0 0 1)-(4 × 2)/c(8 × 2) surface by molecular oxygen

The initial stages of oxidation of the In-rich InAs(0 0 1)-(4 × 2)/c(8 × 2) surface by molecular oxygen (O₂) were studied using scanning tunneling microscopy (STM) and density functional theory (DFT). It was shown that the O₂ dissociatively chemisorbs along the rows in the [1 1 0] direction on the InAs surface either by displacing the row-edge As atoms or by inserting between In atoms on the rows. The dissociative chemisorption is consistent with being autocatalytic: there is a high tendency to form oxygen chemisorption sites which grow in length along the rows in the [1 1 0] direction at preexisting oxygen chemisorption sites. The most common site size is about 21-24 Å in length at ∼25% ML coverage, representing 2-3 unit cell lengths in the [1 1 0] direction (the length of ∼5-6 In atoms on the row). The autocatalysis was confirmed by modeling the site distribution as non-Poisson. The autocatalysis and the low sticking probability (∼10⁻⁴) of O₂ on the InAs(0 0 1)-(4 × 2)/c(8 × 2) are consistent with activated dissociative chemisorption. The results show that is it critical to protect the InAs surface from oxygen during subsequent atomic layer deposition (ALD) or molecular beam epitaxy (MBE) oxide growth since oxygen will displace As atoms.     

Density functional study of hypophosphite adsorption on Ni (1 1 1) and Cu (1 1 1) surfaces

Surface structures and electronic properties of hypophosphite, H₂PO₂⁻, molecularly adsorbed on Ni(1 1 1) and Cu(1 1 1) surfaces are investigated in this work by density functional theory at B3LYP/6-31++g(d, p) level. We employ a four-metal-atom cluster as the simplified model for the surface and have fully optimized the geometry and orientation of H₂PO₂⁻ on the metal cluster. Six stable orientations have been discovered on both Ni (1 1 1) and Cu (1 1 1) surfaces. The most stable orientation of H₂PO₂⁻ was found to have its two oxygen atoms interact the surface with two PO bonds pointing downward. Results of the Mulliken population analysis showed that the back donation from 3d orbitals of the transition metal substrate to the unfilled 3d orbital of the phosphorus atom in H₂PO₂⁻ and 4s orbital's acceptance of electron donation from one lone pair of the oxygen atom in H₂PO₂⁻ play very important roles in the H₂PO₂⁻ adsorption on the transition metals. The averaged electron configuration of Ni in Ni₄ cluster is 4s^0.634p^0.023d^9.35 and that of Cu in Cu₄ cluster is 4s^1.004p^0.033d^9.97. Because of this subtle difference of electron configuration, the adsorption energy is larger on the Ni surface than on the Cu surface. The amount of charge transfers due to above two donations is larger from H₂PO₂⁻ to the Ni surface than to the Cu surface, leading to a more positively charged P atom in Ni_nH₂PO₂⁻ than in Cu_nH₂PO₂⁻. These results indicate that the phosphorus atom in Ni_nH₂PO₂⁻ complex is easier to be attacked by a nucleophile such as OH⁻ and subsequent oxidation of H₂PO₂⁻ can take place more favorably on Ni substrate than on Cu substrate.     

Adsorption of water on TiN (1 0 0), (1 1 0) and (1 1 1) surfaces: A first-principles study

We use first-principles density functional theory-based calculations in the analysis of the interaction of H₂O with (1 0 0), (1 1 0) and (1 1 1) surfaces of TiN, and develop understanding in terms of surface energies, polarity of the surface and chemistry of the cation, through comparison with H₂O adsorption on ZrN. While water molecule physisorbs preferentially at Ti site of (1 0 0) and (1 1 1) surfaces, it adsorbs dissociatively on (1 1 0) surface of TiN with binding stronger than almost 1.32 eV/molecule. Our analysis reveals the following general trends: (a) surfaces with higher energies typically lead to stronger adsorption, (b) dissociative adsorption of H₂O necessarily occurs on a charge neutral high energy surface and (c) lower symmetry of the (1 1 0) plane results in many configurations of comparable stability, as opposed to the higher symmetry (1 0 0) and (1 1 1) surfaces, which also consistently explain the results of H₂O adsorption on MgO available in literature. Finally, weaker adsorption of H₂O on TiN than on ZrN can be rationalized in terms of greater chemical stability of Ti arising from its ability to be in mixed valence.     

Asymmetric adsorption-site of potassium atoms in the (3 × 2)-p2mg structure formed on Cu(0 0 1)

The adsorption of K atoms on Cu(0 0 1) has been studied by low-energy electron diffraction (LEED) at room temperature (RT) and 130 K. At RT, a (3 × 2)-p2mg LEED pattern with single-domain was observed at coverage of 0.33, whereas the orthogonal two-domain was found at 130 K. At 130 K, a c(4 × 2) pattern with orthogonal two-domain was observed at coverage 0.25. Both the (3 × 2)-p2mg and c(4 × 2) structures have been determined by a tensor LEED analysis. It is demonstrated that K atoms are adsorbed on surface fourfold hollow sites in the c(4 × 2), while in the (3 × 2) structure two K atoms in the unit cell are located at an asymmetric site with a glide-reflection-symmetry. The asymmetric site is at near the midpoint between the exact hollow site and bridge-site but slightly close to the hollow site. A rumpling of 0.07 Å in the first Cu layer was confirmed, which might stabilize K atoms at the asymmetric site. Surface structures appearing in a coverage range 0.25-0.33 are discussed in terms of the occupation of the asymmetric site with increase of coverage.