Investigation of current–voltage and capacitance–voltage characteristics of Ag/perylene-monoimide/n-GaAs Schottky diode

Ag/perylene-monoimide(PMI)/n-GaAs Schottky diode was fabricated and the current–voltage (I–V) characteristics at a wide temperature range between 75 and 350 K and also the capacitance–voltage (C–V) characteristics at room temperature for 1 MHz have been analyzed in detail. The measured I–V characteristics exhibit a good rectification behavior at all temperature values. By using standard analysis methods, the ideality factor and the barrier height are deduced from the experimental data and also the variations of these parameters with the temperature are analyzed. In addition, by means of the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the diode. Finally, capacitance–voltage characteristics of device have been analyzed at the room temperature. From analyzing the capacitance measurements, Schottky barrier height is determined and then compared with the value which calculated from the I–V measurements at room temperature. Also, the concentration of ionized donors, built-in potential and some other parameters of diode are found using C–V characteristics.     

X-ray fluorescence analysis of Ni–Fe–Mn/Cr systems

We have developed a procedure for x-ray fluorescence determination of the constituent composition and thickness of two-layer Ni–Fe–Mn/Cr films deposited on Polikor, an aluminum oxide ceramic. We have calculated correction coefficients taking into account interelement interference effects in this system. We have experimentally determined the density of the materials making up the composition of the films. We have established and present the metrological characteristics of the procedure developed.     

Magnetic properties of high-Bs Fe–Cu–Si–B nanocrystalline soft magnetic alloys

In the present study, the magnetic properties and microstructures of newly developed Fe–Cu–Si–B alloys prepared by annealing the melt-spun ribbon have been studied. The average size and number density of nanocrystalline grains were about 20 nm and 10²³–10²⁴ m⁻³, respectively. The saturation magnetic flux density B_s for the present alloy is more than 1.8 T, that is about 10% larger than that of Fe-based amorphous alloys. Moreover, core loss P of the present alloy is about half of that of Si-steel up to B=1.7 T.     

Assessment of the possibility of determination of the electrophysical characteristics of CdxHg1–xTe p+–n-structures using differential hall measurements

The process of reconstuction of the distribution profile of hole concentration in the p ⁺–n structure by the method of differential Hall measurements upon implantation of ions As⁺ (Е = 190 keV, D = 3.10¹⁴ cm^-2, j = 0.025 μA/cm²) into epitaxial films Cd _x Hg_1–x Te for x ~ 0.2, with the initial electron concentration and mobility n = 10¹⁴ cm^-3 and μ = 2∙10⁵ cm²∙V^–1∙s^–1 is numerically simulated. The dependences of degree of reconstruction of the hole-concentration distribution profile on the depth of a shunting n-layer and magnitude of the magnetic field, at which the electrophysical parameters of the p ⁺–n structure are measured, are calculated. The dependence of the limiting magnetic field determining the magnetic-field range for measurements on the n-layer depth is found. It is shown that in calculations one should use the conduction values measured at the same magnetic fields as the Hall coefficients for determination of the holeconcentration distribution profile using the Petritz model.     

Analysis of current–voltage and capacitance–voltage characteristics of perylene-monoimide/n-Si Schottky contacts

The electrical and interface state properties of Au/perylene-monoimide (PMI)/n-Si Schottky barrier diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. A good rectifying behavior was seen from the I–V characteristics. The series resistance (R_s) values were determined from I–V and C–V characteristics and were found to be 160 Ω and 53 Ω, respectively. The barrier height (Φ_b) of Au/PMI/n-Si Schottky diode was found to be 0.694 eV (I–V) and 0.826 eV (C–V). The ideality factor (n) was obtained to be 4.27 from the forward bias I–V characteristics. The energy distribution of interface state density (N_ss) of the PMI-based structure was determined, and the energy values of N_ss were found in the range from E_c ? 0.508 eV to E_c ? 0.569 eV with the exponential growth from midgap toward the bottom of the conduction band. The values of the N_ss without R_s are 2.11 × 10¹² eV^?1 cm^?2 at E_c ? 0.508 eV and 2.00 × 10¹² eV^?1 cm^?2 at E_c ? 0.569 eV. Based on the above results, it is clear that modification of the interfacial potential barrier for metal/n-Si structures has been achieved using a thin interlayer of the perylene-monomide.     

Influence of the Si–O–C interplayer on the flexural behaviors of C/Si–C–N composites

Carbon fiber reinforced Si–C–N matrix composite(C/Si–C–N) with a Si–O–C interlayer (C/Si–O–C/Si–C–N) was fabricated via CVI and PIP process. The flexural behaviors of C/Si–O–C/Si–C–N were investigated using the three-point-bending method and the SEM technique. The results indicated that the flexural strengh of the C/Si–O–C/Si–C–N increases with increasing temperature and the modulus of the composite is essentially unchanged. The strength of C/Si–O–C/Si–C–N is comparable to that of C/PyC/Si–C–N, and the role of Si–O–C interlayer in C/Si–C–N can rival that of the PyC interlayer. The weaker interfacial bonding and the larger thickness of Si–O–C interlayer make a contribution to this at RT while the thinner interlayer and unstable structure of Si–O–C interphase do it above 1300 °C.     

Electrical properties of Al/p–Ge and Al/Methyl Green/p–Ge diodes

Methyl green (MG) film has been grown for the first time on p–Ge semiconductor using a simple and low-cost drop coating method. The current–voltage (I–V) characteristics of Al/p–Ge and Al/MG/p–Ge diodes have been investigated in the temperature range of 20–300 K. A potential barrier height as high as 0.82 eV has been achieved for Al/MG/p–Ge diode, which has high rectification rate, at room temperature. It is seen that the barrier height of the Al/MG/p–Ge diode at the room temperature is larger than that of Al/p–Ge diode and ideality factor value of 1.14 calculated for Al/MG/p–Ge diode is lower than Al/p–Ge diode. The temperature coefficient of barrier height of the Al/MG/p–Ge diode has been calculated as 2.6 meV/K. The evaluation of current–voltage characteristics shows that the barrier height of the diode increases with the increasing temperature.     

Comparative evaluation of performance of percolated perpendicular media using FePt–MgO/Pt/Cr trilayer and FePt–MgO/MgO bilayer

(Fe₄₈Pt₅₂)_100−x–(MgO)_x films were used to examine the performance of a perpendicular percolated medium. Two underlayers, Pt(0 0 1)/Cr(0 0 2) and MgO(0 0 2), were used for comparison. The (Fe₄₈Pt₅₂)_100−x–(MgO)_x film with the MgO underlayer exhibits a strong preference to segregate at FePt grain boundaries. The microstructure with small closely packed MgO particles (2–4 nm) dispersed uniformly in the L1₀ FePt matrix was achieved in the Pt/Cr underlayered sample. Structural data reveal that the precipitate is crystallographically coherent with the surrounding L1₀ FePt phase and preserves good lattice alignment. Magnetic results indicate significant pinning behavior for those introduced non-magnetic columns with an enhanced coercivity of about 70%—much greater than that of the MgO underlayered samples. Percolated perpendicular medium can be realized in the FePt system and a Pt(0 0 1)/Cr(0 0 2) underlayer promotes the formation of pinning sites within the FePt grains.     

PAL spectroscopy of rare-earth doped Ga–Ge–Te/Se glasses

Positron annihilation lifetime (PAL) spectroscopy was applied for the first time to study free-volume void evolution in chalcogenide glasses of Ga–Ge–Te/Se cut-section exemplified by glassy Ga₁₀Ge₁₅Te₇₅ and Ga₁₀Ge₁₅Te₇₂Se₃ doped with 500 ppm of Tb³⁺ or Pr³⁺. The collected PAL spectra reconstructed within two-state trapping model reveal decaying tendency in positron trapping efficiency in these glasses under rare-earth doping. This effect results in unchanged or slightly increased defect-related lifetimes τ₂ at the cost of more strong decrease in I₂ intensities, as well as reduced positron trapping rate in defects and fraction of trapped positrons. Observed changes are ascribed to rare-earth activated elimination of intrinsic free volumes associated mainly with negatively-charged states of chalcogen atoms especially those neighboring with Ga-based polyhedrons.     

Some electrical and structural properties of Cd/CdS/n–Si/Au–Sb sandwich structure

In view of CdS growth is very impotent for technological importance especially solar applications; synthesis of this material remains a topic of great interest for researchers by means of an economically and technically viable method. In the present paper, Cd/CdS/n–Si/Au–Sb sandwich structure has been grown by Successive Ionic Layer Adsorption and Reaction (SILAR) technique. For investigating the structural properties, X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX) measurements have been performed and it has been seen that films exhibit polycrystalline behavior. The capacitance–voltage (C–V) and conductance/w-voltage (G/w–V) characteristics of Cd/CdS/n–Si/Au–Sb structure have been investigated by considering series resistance and interface states effects. These measurements have been done in the −4 V, 4 V voltage range and in the frequency range of 10 kHz–3 MHz at room temperature. It is seen that, the series resistance (R_s) and interface state density have been strongly depend on frequency. The barrier height, donor concentration, diffusion potential parameters have been determined from the linear C⁻²–V plot. The barrier height values are obtained between 0.495 and 0.796 eV and doping density values have been ranged from 1.455 × 10¹⁴ to 1.999 × 10¹⁴ cm⁻³respectively. The capacitance–frequency (C–f) and conductance/w-frequency (G/w–f) characteristics of Cd/CdS/n–Si/Au–Sb structures have been measured at the various biases 0.00–0.14 V at room temperature. The energy distribution of the interface states (N_ss) and their relaxation time (τ) have been determined from the forward bias capacitance–frequency characteristics. The N_ss and τ values have ranged from 2.01 × 10¹² cm⁻² eV⁻¹and 9.68 × 10⁻⁴ s in (Ec-0.45) eV–2.86 × 10¹³ cm⁻² eV⁻¹ and 3.81 × 10⁻⁴ s in (Ec-0.75) eV, respectively.     

Manifestation of geometric resonance in current dependence of AC susceptibility for unshunted array of Nb–Alx–Nb Josephson junctions

A pronounced resonance-like structure has been observed in the current dependence of AC susceptibility for two-dimensional array of unshunted Nb–Al_x–Nb Josephson junctions. Using a single-plaquette approximation, we were able to successfully fit our data assuming that resonance structure is related to the geometric (inductive) properties of the array.     

Magnetic properties of CoPt–SiNx/Ag nanocomposite films

When the thickness of Ag under layer is 25 nm, the CoPt/Ag film has maximum out-of-plane squareness (S_⊥), minimum in-plane squareness (S_∥), and the largest out-of-plane coercivity (H_c⊥), they are 0.95, 0.35, and 15 kOe, respectively. Different volume percent of SiN_x ceramic materials were co-sputtered with Co₅₀Pt₅₀ films on the Ag under layer to reduce the grain size of the CoPt film. Comparing the X-ray diffraction pattern of CoPt-SiN_x/Ag films without annealing with that of the films which annealed at 600 and 700 °C, it is found that the intensities of CoPt (0 0 1) and CoPt (0 0 2) superlattice lines were reduced after annealing. As the SiN_x content is raised to 50 vol%, the particle size of CoPt is reduced to be about 9 nm.     

Three-Body Recombination of Cold 3He–3He–T- System

The atom-atom-anion three-body recombination(TBR) and collision induced dissociation(CID) processes of the ³He–³He–T^- system at ultracold temperatures are investigated by solving the Schr¨odinger equation in the adiabatic hyperspherical representation. The variations of the TBR and CID rates with the collision energies in the ultracold temperatures are obtained. It is found that the J^Π= 1^- symmetry dominates the TBR and CID processes in most...     

Study of the Optical Properties of CdZnSe/ZnS-Quantum Dot–Au-Nanoparticle Complexes

The interaction of gold nanoparticles (NPs) and semiconductor alloyed CdZnSe/ZnS quantum dots (QDs) in colloidal solutions is studied. It is shown that the photoluminescence intensity of QDs in a mixture decreases compared to that in the initial QD solution, which is caused by resonance nonradiative energy transfer from QDs to Au NPs in spontaneously formed aggregates. To control the formation of pairs of interacting QDs and Au NPs, we proposed have a method for creating QD–Au NP complexes bound by special molecules—ligands. It is shown that the morphology and optical properties of the samples obtained depend on the method of their preparation, in particular, on the chemical environment of QDs. It is found that the complexes form in the case of addition of hydrophilic Au NPs to hydrophobic QDs and that this almost does not change the optical properties of the latter compared to those of quasi-isolated QDs in colloidal solution.     

Capacitance–voltage and conductance–voltage characteristics of Ag/n-CdO/p-Si MIS structure prepared by sol–gel method

The frequency dependent electrical properties of Ag/n-CdO/p-Si structure has been investigated using capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics in the frequency range 10 kHz–1 MHz in the room temperature. The increase in capacitance at lower frequencies is observed as a signature of interface states. The presence of the interfaces states (N_SS) is also evidenced as a peak in the capacitance–frequency characteristics. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C–V and G/ω–V measurements and plotted as functions of voltage and frequency. The distribution profile of R_S–V gives a peak in the depletion region at low frequencies and disappears with increasing frequencies. The values of interface state densities and series resistance from capacitance–voltage-frequency (C–V-f) and conductance–voltage-frequency (G/ω–V-f) measurements were obtained in the ranges of 1.44×10¹⁶–7.59×10¹² cm^?2 eV^?1 and 341.49–8.77 Ω, respectively. The obtained results show that the C–V-f and G/ω–V-f characteristics confirm that the interface states density (N_SS) and series resistance (R_S) of the diode are important parameters that strongly influence the electrical parameters in Ag/n-CdO/p-Si structures.     

Electronic Structure of Immunoactive Molecules of 8–Azagona–12,17–Dione

Using the semiempirical method of partial neglect of differential overlap (PNDO), we have calculated the wave functions, energies, orbital configurations of electronic states, oscillator strengths of transitions, electronic density distributions, and dipole moments for the molecule of biologically active 8–azagona–12,17–dione, containing a conformationally rigid –acyl––aminovinylcarbonyl fragment. It has been established that as to their orbital nature the excited lower and higher singlet electronic states of this molecule are of the n^*– and ^* type respectively. The results of the theoretical analysis are in good qualitative agreement with the spectral data on absorption and luminescence. The calculations of the intermolecular interaction of the compound under consideration with a medium show that the molecular systems under consideration can possess a dynamic multicenter structure.     

Injection Molding of Wood–Fiber/Plastic Composite Foams

This paper investigates the feasibility of injection-molded wood–fiber/high-density polyethylene (HDPE) composite foams that can replace injection-molded HDPE solids in industrial applications. The study applies injection foam molding technology using a physical blowing agent to a wood–fiber/HDPE composite, and examines the effects of the processing parameters on the dimensional and mechanical properties and cell density of the composite foams. In addition, the physical properties and cost of wood–fiber/HDPE composite foams are compared with those of solid HDPE. The experimental results show that wood–fiber/HDPE composite foams that have a 20% weight reduction have superior physical properties, such as density, dimensional properties (68% decrease of shrinkage and 91% decrease of warpage) and mechanical properties (28% increase of Young's modulus). Furthermore, the cost analysis confirms that wood–fiber/HDPE composite foams are much less expensive (by 40%) than HDPE. Therefore, it is concluded that wood–fiber/HDPE composite foams are strong candidates for replacing current injection-molded HDPE products.     

I–V characteristics of ZnO/Cu2O thin film n–i–p heterojunction

ZnO/Cu₂O thin film n–i–p heterojunctions were fabricated by magnetron sputtering. The microstructure, optical, and electrical properties of n-type (n‐) ZnO, insulating (i‐) ZnO, and p-type (p‐) Cu₂O films deposited on glass substrates were characterized by X-Ray diffraction (XRD), spectrophotometer, and the van der Pauw method, respectively. XRD results show that the mean grain size of i-ZnO film is much larger than that of n-ZnO film. The optical band gap energies of n-ZnO, i-ZnO, and p-Cu₂O film are 3.27, 3.47, and 2.00 eV, respectively. The carrier concentration of n-ZnO film is two orders of magnitude larger than that of p-Cu₂O film. The current–voltage (I–V) characteristics of ZnO/Cu₂O thin film n–i–p heterojunctions with different i-ZnO film thicknesses were investigated. Results show that ZnO/Cu₂O n–i–p heterojunctions have well-defined rectifying behavior. All ideality factors of these n–i–p heterojunctions are larger than 2.0. The forward bias threshold voltage and ideality factor increase when i-ZnO layer thickness increases from 100 to 200 nm. An energy band diagram was proposed to analyze the I–V characteristics of these n–i–p heterojunctions.     

Effect of Methyl Methacrylate Graft Acrylonitrile–Butadiene-Styrene on Morphology and Properties of Polycarbonate/Acrylonitrile–Butadiene-Styrene Blend

In order to improve the compatibility of polycarbonate (PC) and acrylonitrile– butadiene–styrene (ABS), a new type of reactive compatibilizer, methyl methacrylate graft acrylonitrile–butadiene–styrene (MABS) tetramer, was synthesized. The structure and properties of PC/ABS (70/30) blend with various MABS ratios were studied in terms of their mechanical and morphological properties. The results indicated that with the addition of MABS, the glass transition temperature (T_g) of the PC and ABS phases were closer to each other. Addition of MABS decreased the domain size of the ABS dispersed phase, making the dispersed phase well distributed, and the interfacial cohesiveness was enhanced. Notched impact strength and elongation at break of the PC/ABS (70/30) blend increased remarkably with the addition of MABS, with a small drop in the tensile strength.