氟化氙(C-A蓝绿激光技术研究进展

 综述了XeF(C-A)激光的产生原理，表面放电光泵浦源的结构，激光器装置， XeF(C-A)激光实验研究以及XeF(C-A)激光理论模拟；介绍了XeF₂浓度的监测，以及表面放电光泵浦源技术研究的最新进展。     

XeF(C-A)蓝绿激光线宽压缩技术

利用表面放电光泵浦XeF(C-A)蓝绿激光器开展了激光线宽压缩技术研究,分别采用谐振腔腔镜谱带重叠法和光栅谐振腔法实现了线宽小于10 nm的窄线宽激光输出。采用谐振腔腔镜谱带重叠法,激光输出线宽约7 nm,采用光栅谐振腔法可以将激光线宽压缩到约1 nm,并实现XeF(C-A)激光的可调谐输出,调谐范围为470~495 nm。     

双向光泵浦XeF(C-A)激光

 讨论了双向光泵浦XeF(C-A)激光技术,给出了双向泵浦情况下的XeF₂光解离波图像。在双向泵浦条件下XeF(C-A)激光输出能量提高了近3倍,最大输出达到3.3 J,激光脉宽增加到1 100 ns。激光输出特性受XeF2初始浓度的显著影响,激光形成时间随XeF₂初始浓度增大而加长,激光脉宽先增大后减小,激光近场光斑呈现出不同的形状,由方形变化为“X”形状。     

激光、激光技术 激光器件 化学激光器

TN248.5 2006032017XeF2光解离波的空间传输对形成XeF(C-A)激光的影响=Formation of XeF(C-A) laser affected by XeF2photodisso-ciation wave[刊,中]/于力(西北核技术研究所.陕西,西安(710024)) ,刘晶儒…∥激光杂志.—2006 ,27(1) .—78-79利用XeF2光解离波图像,测量了现有激光实验条件下的解离波半径及传输速度,解离波厚度为5 ~8 mm,传输速度随泵浦时间的增加而减慢,平均速度约13 km/s。选择四种不同的腔轴位置,腔轴距泵浦源表面的距离d分别为10、13、16、20 mm。激光实验结果表明,XeF2光解离波的空间传输对XeF(C-A)激光的形…     

陶瓷表面放电光泵浦源放电特性研究

为了提高表面放电光泵浦源的寿命,以Al_2O_3陶瓷作为放电基板,研制了分段表面放电光泵浦源。基于放电电压和电流波形,详细研究了泵浦源的放电周期,放电通道电阻,能量沉积效率和等离子体功率密度。发现泵浦源的放电周期、放电通道电阻和能量沉积效率均随放电间隙长度和混合气体气压的增大而变大,随充电电压的增加而减小;而等离子体功率密度主要取决于充电电压和放电间隙长度,基本不随混合气体气压的改变而变化。在充电电压为26. 8 kV,气压为100 kPa,放电间隙长8 cm的条件下,泵浦源的能量沉积效率约为82%,等离子体功率密度达到了9. 36 MW/cm。实验研究表明:Al_2O_3陶瓷表面放电光泵浦源具有良好的放电特性,较同等条件下聚四氟乙烯表面放电光泵浦源的等离子体功率密度更高,可产生更强的真空紫外辐射,辐射亮度温度大于23 kK。Al_2O_3陶瓷表面放电光泵浦源适用于光泵浦XeF_2气体形成大功率XeF(C-A)蓝绿激光。     

用于XeF蓝绿激光器的表面放电光泵浦源

基于Al2O3陶瓷、BN陶瓷和聚四氟乙烯三种基底建立了分段表面放电光泵浦源,对比研究了这三种表面放电光泵浦源的电学特性、辐射特性和烧蚀特性。利用放电波形计算了表面放电光泵浦源的等效电感、等效电阻和沉积效率,应用光谱法比较了它们的紫外辐射强度,并采用平均线烧蚀率评估了三种泵浦源的耐烧蚀性能。通过比较研究发现,在充电电压为13.5~26.8kV、间隙长度为8cm、放电室内混合气体气压为100kPa条件下,三种泵浦源中Al2O3陶瓷表面放电光泵浦源的沉积效率最高,大于82%;辐射光谱具有紫外增强效应,紫外辐射最强;平均线烧蚀率最小(小于0.15μm/shot),耐烧蚀性能最好。研究结果表明采用Al2O3陶瓷表面放电光泵浦源作为大功率重频XeF蓝绿激光器的泵浦源,可提高XeF蓝绿激光器的寿命。     

重频XeF蓝绿激光技术

 利用表面放电光泵浦技术,研制了重频XeF(C-A)激光器,运行频率达到10 Hz。研究了运行频率、气体流量对激光输出能量稳定性的影响,分析了影响输出稳定性的主要因素,实验结果表明,提高气流量可有效改善重频输出能量的稳定性。同时,还给出了优化实验条件下不同运行频率连续20个脉冲较为理想的输出结果。运行频率分别为1,2,5 Hz时,输出能量稳定性较好,输出能量大于4.0 J;气流量大于53 L/s时,10 Hz重频运行的输出稳定性已显著提高,平均输出能量也达到1.8 J。     

分段表面放电光抽运XeF(C-A)激光器

阐述了分段表面放电光抽运XeF(C -A)激光器的设计和实验技术。分段表面放电辐射源在 140nm～ 170nm辐射区域亮度温度Tb≈ 15× 10 3K ,用该辐射源作抽运源离解XeF2 获得了XeF(C -A)蓝绿 (4 70nm～ 495nm)激光输出 ,激光脉宽为 340ns、光谱宽度为 15nm。     

横向表面放电光泵浦源特性研究

 介绍了一种用以泵浦XeF(C-A)激光的横向表面放电辐射源,比较详细地研究了这种泵浦源的放电击穿特性、放电电流与充电电压及不同气体介质的关系、表面放电均匀性以及不同气体成分对表面放电辐射特性的影响。得到了放电击穿时间、放电峰值电流随充电电压、不同气体介质变化的曲线;分析了提高放电均匀性的途径,在电极长50cm、间距6cm、充电电压25kV条件下获得了均匀放电。获得了各种实验条件下放电辐射的光谱曲线;通过对辐射光谱的分析,研究了有利于光解离XeF₂的最佳实验条件,当p_Ar:p_N2=1:1时,放电在远紫外波段产生的辐射最强。     

基于XeF (C-A)激光激励的自发拉曼散射技术研究

针对自发拉曼散射技术应用于实际燃烧场参数测量时面临的主要技术难题,采用XeF(C-A)激光作为激励光源,开展了自发拉曼散射技术实验研究。通过分析拉曼散射过程对光源参数的要求,优化了XeF(C-A)激光器部分参数,建立了自发拉曼散射诊断系统,实现了气体介质主要组分浓度在线测量,对比了XeF(C-A)激光与主流激光作为拉曼散射光源的优缺点。结果表明:与现有主流光源相比,具有脉冲能量大、微秒级脉宽,位于可见光波段等特点的放电抽运XeF(C-A)激光非常适合用作自发拉曼散射激励光源。     

Dissociation of a product of a surface reaction in the gas phase: XeF2 reaction with Si

Xenon difluoride interacts with Si(100)2 x 1 by atom abstraction, whereby a dangling bond abstracts a F atom from XeF2, scattering the complementary XeF. Partitioning of the reaction exothermicity produces sufficient XeF rovibrational excitation for dissociation to occur. The resulting F and Xe atoms are shown to arise from dissociation of XeF in the gas phase by demonstrating that the angle-resolved velocity distributions of F, Xe, and XeF conserve momentum, energy, and mass. This experiment documents the first observation of dissociation of a surface reaction product in the gas phase.     

Discharge instability induced by external laser preionization of a XeF discharge laser

External-laser-induced preionization of excimer lasers was investigated. A discharge XeF laser was preionized by two different UV lasers [a KrF laser (λ=249 nm) and an ArF laser (λ=193 nm)], and the improvements in performance of the XeF laser were compared. The XeF laser beam profiles were measured by an intensified CCD (ICCD) camera with temporal resolution of 10 ns. Striated XeF laser profiles were obtained with 249 nm laser preionization, whereas there was no striation in the profiles for 193 nm laser preionization. These striations originated from discharge in the XeF laser induced by laser preionization. The influence of excited rare-gas atoms on the discharge instability was examined.     

Gain dynamics of XeF and subpicosecond pulse generation at 351 nm

Subpicosecond pulse amplification at the 351 nm line of XeF is reported. The study of the gain dynamics of XeF with subpicosecond (subnanosecond) pulses resulted in 0.2 mJ/cm² (0.8 mJ/cm²) for the saturation energy density and 0.18 cm^–1 (0.21 cm^–1) for the small-signal-gain coefficient. In XeF a gain recovery of 78±4% with a 79±18 ps time constant is found.     

Self-limiting growth of metal fluoride thin films by oxidation reactions employing molecular precursors

FeF (2) films are grown by the reaction of XeF (2) and SeF (6) with iron foil. The growth initially follows the Mott-Cabrera parabolic rate law, indicating that the process is diffusion limited. At a certain film thickness, however, the growth abruptly stops, with the thickness using XeF (2) being nearly double that with SeF (6). It is suggested that the shutdown is due to the inability of the molecules to dissociate when too far from the substrate and that SeF (6) must approach more closely than XeF (2). This work suggests the use of molecular precursors to grow thin films via a self-limiting chemical process.     

Ultraviolet four-photon mixing in a multimode silica fiber Raman amplifier

Efficient frequency conversion of the XeF excimer (351.2 nm) by nonlinear effects in a highly multimode silica fiber is reported. Besides a substantial Raman amplification of the weaker XeF line at 353.3 nm, stimulated four-photon mixing has also been observed, generating a Stokes peak at 355.5 nm with 1 kW peak power.     

A new blue-green XeF (C→A) excimer laser amplifier concept

The feasibility of using the electrically excited XeF(C»A) excimer medium as an efficient wideband amplifier in the blue-green region of the spectrum has been investigated. Calculations show that for an intense blue-green optical flux input the amplification characteristics of XeF(C»A) improve, as a result of both bleaching of the pump induced absorbers and by additional production of XeF(C) level population. The removal of one of the major absorbing species, Xe^** in the XeF (C»A) laser mixture by means of a pulsed ruby laser probe beam has been demonstrated.     

Laser-induced back-side wet etching of fused silica with an aqueous solution containing organic molecules

The laser-induced back-side wet etching of fused silica with aqueous solutions of pyranine (8-hydroxy-1,3,6-pyrenetrisulfonic acid trisodium salt) is reported. KrF and XeF excimer lasers were employed as light sources. Well-defined line-and-space and grid micropatterns, free of debris and microcracks, were obtained. Compared with other organic solutions, the aqueous pyranine etching medium etches more slowly but produces a higher quality etched surface. With the KrF laser, the etch rate ranged from 0.02 to 0.12 nm pulse^-1, depending on the dye concentration and the fluence of the laser. The etch rate decreased dramatically when the XeF laser was employed, which was partially attributed to the lower absorption efficiency of the aqueous pyranine solution at the XeF laser wavelength. Received: 20 November 2001 / Accepted: 21 November 2001 / Published online: 2 May 2002