Effect of replacement of Se by S on structural and physical properties of Ge–Sb–As–Se–S chalcogenide glasses

In the present study, the structural and opto-mechanical properties of Ge–Sb–As–Se–S chalcogenide glasses have been investigated. For this purpose, different bulk glasses of Ge₂₀Sb₅As₁₅Se_60?xS_x (0 ≤ x≤50) were prepared by conventional melt quenching technique in quartz ampoule and different characteristics of prepared glasses such as glass transition temperature, density, hardness, transmittance, optical band gap energy and refractive index were determined. The value of hardness and glass transition temperature of prepared glasses were found to increase with increasing the sulfur content as a result of formation of GeS₄ tetrahedral units and increasing the network connectivity and average bonding energy. The optical energy gap (according to Tauc’s relation), transmittance and refractive index of prepared glasses are in direct relation with sulfur content. In this study, the highest value of transmittance (about 70%) and lowest value of refractive index (2–2.3) was achieved in Ge₂₀Sb₅As₁₅Se₄₀S₂₀ and Ge₂₀Sb₅As₁₅Se₁₀S₅₀ glasses, respectively.     

Thermal stability and crystallization kinetics of Ge–Se–Cd glasses

The effect is reported of varying cadmium concentration on the glass transition, thermal stability and crystallization kinetics of Ge₂₀Se_{80? x} Cd _x (x = 2.5, 5, 7.5 and 10 at. %) glasses. Differential scanning calorimetry results under non-isothermal conditions for the studied glasses are reported and discussed. The values of the glass transition temperature (T_g ) and the peak temperature of crystallization (T_p ) were found to be dependent on heating rate and Cd content. From the heating rate dependence of T_g and T_p , the values of the activation energy for glass transition (E_g ) and the activation energy for crystallization (E_c ) were evaluated and their composition dependence discussed. The thermal stability of the glasses was evaluated using various thermal stability criteria such as ΔT, H_g and S. The stability calculations emphasize that the thermal stability decreases with increasing Cd content.     

Effect of SnI2 on the thermal and optical properties of Ge–Se–Te glasses

A systematic series of (Ge₂₀Se₁₅Te₆₅)_1?x–(SnI₂)_x (x = 0, 0.05, 0.1, 0.15) chalcogenide glasses have been prepared. The amorphous nature can be confirmed by XRD and SEM. With the SnI₂ content increasing, the indirect optical band gaps are decreased from 0.662 to 0.622 eV according to Tauc laws. The introduction of SnI₂ makes the glasses much easier to prepare and more stable against crystallization, making them drawable as optical fibers. The highest ΔT (130 °C) value for (Ge₂₀Se₁₅Te₆₅)_0.9–(SnI₂)_0.1 glass composition can be obtained. A slight red-shifting of the long-wavelength cutting-off edge from 18.4 to 19.4 μm was shown and it seems that SnI₂ in these glasses offers the improvement in the far-infrared properties.     

PAL spectroscopy of rare-earth doped Ga–Ge–Te/Se glasses

Positron annihilation lifetime (PAL) spectroscopy was applied for the first time to study free-volume void evolution in chalcogenide glasses of Ga–Ge–Te/Se cut-section exemplified by glassy Ga₁₀Ge₁₅Te₇₅ and Ga₁₀Ge₁₅Te₇₂Se₃ doped with 500 ppm of Tb³⁺ or Pr³⁺. The collected PAL spectra reconstructed within two-state trapping model reveal decaying tendency in positron trapping efficiency in these glasses under rare-earth doping. This effect results in unchanged or slightly increased defect-related lifetimes τ₂ at the cost of more strong decrease in I₂ intensities, as well as reduced positron trapping rate in defects and fraction of trapped positrons. Observed changes are ascribed to rare-earth activated elimination of intrinsic free volumes associated mainly with negatively-charged states of chalcogen atoms especially those neighboring with Ga-based polyhedrons.     

Yb-doped yttria–alumino–silicate nano-particles based optical fibers: Fabrication and characterization

An efficient method to fabricate transparent glass ceramic fibers containing in-situ grown Yb³⁺ doped oxide nano-particles based on yttria–alumino–silicate glass is presented. These large-mode area Yb³⁺ doped fibers having a core diameter around 25.0 μm were drawn by a proper control over the involved process parameters; by this, the size of nano-particles was maintained within 5–10 nm. The main spectroscopic and laser properties of the fabricated fibers along with the nano-structuration results are reported. These results reveal that the developed method offers new scopes for the contemporary Yb³⁺ fiber based devices.     

Characterization of new quaternary chalcogenide As–Ge–Se–Sb thin films

This paper reports the effect of replacement of selenium by antimony on the optical gap and some other physical parameters of new quaternary chalcogenide As₁₄Ge₁₄Se_{72? x} Sb _x (where x = 3, 6, 9, 12 and 15 at%) thin films. Thin films with thickness 200–220 nm of As₁₄Ge₁₄Se_{72? x} Sb _x were prepared by thermal evaporation of the bulk samples. Increasing antimony content was found to affect the average heat of atomization, the average coordination number, number of constraints and cohesive energy of the As₁₄Ge₁₄Se_{72 ?x} Sb _x alloys. Optical absorption measurements showed that the fundamental absorption edge is a function of composition. Optical absorption is due to allowed, non-direct transition and the energy gap decreases with the increasing antimony content. The chemical bond approach has been applied successfully to interpret the decrease in the optical gap with increasing antimony content.     

Influence of the selenium content on thermo-mechanical and optical properties of Ge–Ga–Sb–S chalcogenide glasses

A number of Ge₁₇Ga₄Sb₁₀S_69−xSe_x (x = 0, 15, 30, 45, 60, and 69) chalcogenide glasses have been synthesized by a melt-quenching method to investigate the effect of the Se content on thermo-mechanical and optical properties of these glasses. While it was found that the glass transition temperature (T_g) decreases from 261 to 174 °C with increasing Se contents, crystallization temperature (T_c) peak only be observed in glasses with Se content of x = 45. It was evident from the measurements of structural and physical properties that changes of the glass network bring an apparent impact on the glass properties. Also, the substitution of Se for S in Ge–Ga–Sb glasses can significantly improve the thermal stability against crystallization and broaden the infrared transmission region.     

Fabrication and characterization of Cu–CdSe–Cu nanowire heterojunctions

The Cu–CdSe–Cu nanowire heterojunctions were fabricated by sequential electrochemical deposition of layers of Cu metal and CdSe semiconductor within the nano-pores of anodic alumina membrane templates. X-ray diffraction reveals the cubic phase for Cu and hexagonal phase for CdSe in the electrodeposited Cu–CdSe–Cu nanowire heterojunctions. The composition of the nanowire heterojunction segments is characterized by energy dispersive X-ray spectroscopy. The morphological study of nanowire heterojunctions has been made using scanning electron microscope and high resolution transmission microscopy. The nanowire heterojunctions grown in 100 and 300 nm nano-pore size templates have been found to have optical band gaps of 1.92 and 1.75 eV, respectively. The absorption spectra of 100 nm nanowire heterojunctions show a blue shift of 0.18 eV. The collective nonlinear current–voltage (I–V) characteristics of the 300 and 100 nm nanowire heterojunctions show their rectifying and asymmetric behaviour, respectively.     

Fabrication and characterization of bismuth oxide–holmia nanofibers and nanoceramics

In this article, a novel and simple method to produce both boron doped and undoped holmia stabilized bismuth oxide nanoceramic materials has been put forward. Boron doped and undoped poly (vinyl alcohol)/bismuth–holmia acetate nanofibers were produced using the electrospinning technique and were calcined at 850 °C afterward in order to obtain nanopowder. The characteristics of the nanofibers were investigated with FT-IR, XRD, and SEM. XRD analyses showed that boron undoped holmia stabilized bismuth oxide nanopowders have the face-centered cubic structure (δ-phase), and that the incorporation of boron atoms into the composite prevents the nucleus formation and turns the structure into a more amorphous glassy form. The SEM micrographs of the fibers showed that the addition of boron results in the formation of cross-linked bright-surfaced fibers. The average fiber diameters for electrospun boron doped and undoped PVA/Bi–Ho acetate nanofibers were calculated using the ImageJ software as 102 nm and 171 nm, respectively.     

Thermal and optical analysis of Te-substituted Sn–Sb–Se chalcogenide semiconductors

Bulk amorphous samples of Te-substituted Sn₁₀Sb₂₀Se_70−X Te _X (0≤X≤12) were prepared using a melt quenching technique. Calorimetric studies of the samples were performed using differential scanning calorimetry (DSC) and the glass transition temperature and crystallization temperature were evaluated from DSC scans. The glass transition temperature T _g exhibits a sharp decrease for small Te substitution of X=2, thereafter increases with increase in Te content up to X=10, and then decreases for further Te substitution. The apparent activation energy for glass transition and the activation energy for crystallization were calculated using Kissinger, modified Kissinger, and Matusita equations. The change in glass transition temperature T _g has been explained based on the bond formation energy of different heteropolar bonds. The optical band gap of thermally evaporated thin films of Sn₁₀Sb₂₀Se_70−X Te _X (0≤X≤12) was calculated from reflectance and transmittance data. The optical band gap variation with tellurium content exhibits a sharp decrease for an initial tellurium substitution of X=2 similar to that of the glass transition temperature and thereafter a peak is observed in optical band gap around X=4 composition.     

Crystallization kinetics and Avrami index of Sb-doped Se–Te–Sn chalcogenide glasses

Bulk amorphous samples of Sb-substituted Se_78?xTe₂₀Sn₂Sb_x (0 < x < 6) have been prepared using melt quench technique. The structure of Se_78?xTe₂₀Sn₂Sb_x (x = 0, 2, 4, 6) glassy alloys has been investigated using X-ray diffraction technique. Calorimetric studies of the prepared samples have been performed under non-isothermal conditions using differential scanning calorimetry (DSC) and glass transition temperature as well as crystallization temperature has been evaluated using DSC scans. The activation energy of crystallization kinetics (E_c) has been determined using model-free approaches such as Kissinger, Ozawa, Tang and Starink methods. The Avrami index (n) and frequency factor (K_o) have been calculated by Matusita and Augis–Benett method.     

Determination of the thickness and optical constants of amorphous Ge–Se–Bi thin films

The effect of varying bismuth concentration on the optical constants of amorphous Ge₂₀Se_{80? x} Bi _x (where x = 0, 3, 6, 9 and 12 at%) thin films prepared by thermal evaporation has been investigated. The transmission spectra T(λ) of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. An analysis proposed by Swanepoel [J. Phys. E: Sci. Instrum. 16 (1983) p.1214], based on the use of the maxima and minima of the interference fringes, was applied to derive the real and imaginary parts of the complex index of refraction and also the film thickness. Increasing bismuth content was found to affect the refractive index and extinction coefficient of the Ge₂₀Se_{80? x} Bi _x films. Optical absorption measurements show that the fundamental absorption edge is a function of composition. With increasing bismuth content, the refractive index increases while the optical band gap decreases.     

On the properties and stability of thermally evaporated Ge–As–Se thin films

Thin films of Ge–As–Se chalcogenide glasses have been deposited by thermal evaporation from bulk material and submitted to thermal treatments. The linear refractive index and optical band-gap for as-deposited and annealed films have been analyzed as function of the deposition parameters, chemical composition and mean coordination number (MCN). The chemical composition of the films was found to be directly affected by deposition rate, with low rates producing films with elevated Ge and reduced As content, whilst at high rates the Ge content was generally reduced and As levels increased compared with the bulk starting material. As a result films with close to the same stoichiometry as the bulk glass could be obtained by choosing appropriate deposition conditions. As-deposited films with MCN in between 2.44 and 2.55 showed refractive indices and optical band-gaps very close to those of the bulk glass whereas outside this range the film indices were higher and the optical gaps lower than those of the bulk glass. Upon annealing at close to their glass transition temperature, high MCN films evolved such that their indices and band-gaps approached the bulk glass values whereas at low MCN films resulted in no changes to the film properties.     

Electrical and thermal properties of chalcogenide glass system Se75Ge25−x Sb x

The dc and thermal conductivities of five different compositions of the chalcogenide glass system Se₇₅Ge_25–x Sb _x have been studied in a temperature range below T _g. The dc conductivity results indicate that each composition has a single activation energy in the considered temperature range. The coefficient of thermal conductivity increased linearly with temperature below T _g for the compositions investigated. The increase of Sb content in the chalcogenide glass system leads to an increased coefficient of electrical conductivity , an increased coefficient of thermal conductivity , and to a decreased activation energy E and pre-exponential factor ₀. The observed compositional dependencies of and E have been correlated with the increase of weak bond density and the decrease of covalent bond density in the structure of the compositions investigated with increasing Sb content at the expense of Ge content. The decrease in ₀ and the increase in has been, respectively, correlated with the decrease in mobility and the increase in phonon velocity.     

The dependence of photosensitivity on composition for thin films of Ge x As y Se1–x–y chalcogenide glasses

We have prepared twelve Ge–As–Se chalcogenide glass films with different chemical compositions and investigated their stability to exposure with near bandedge light. The evolution of two key parameters, the refractive index at 1550 nm and the bandgap with increasing fluence were fitted with stretched-exponential functions. While most of the films showed photo-bleaching (or photodarkening) behavior, we found that for films with a mean coordination number (MCN) around ≈2.45–2.50, neither the bandgap nor the refractive index changed upon irradiation, demonstrating that photostable glasses exist with a particular chemical composition corresponding to the strongest glass formers. Such photostable glasses are the best choice for applications in photonics.