Synthesis of transparent BaTiO<Subscript>3</Subscript> nanoparticle/polymer hybrid

Transparent BaTiO₃ nanoparticle/polymer hybrid was synthesized by polymerization and hydrolysis of barium titanium alkoxide modified with 2-vinyloxyethoxy ligand. Barium alkoxide, titanium alkoxide and 2-vinyloxyethanol were reacted affording a BaTiO₃ precursor, which was then hydrolyzed and polymerized to form BaTiO₃ particle/polymer hybrids below 100°C. BaTiO₃ particles increased in crystallinity with increasing water amount for hydrolysis. The absorption edge of the hybrid film on silica plates shifted to shorter wavelength with decreasing crystallite size. Nano-sized BaTiO₃ particle/polymer hybrid polymerized with methyl methacrylate (MMA) was shaped into a transparent and self-standing film with a refractive index of 1.595 at 589 nm.     

Photoactivity passivation of TiO<Subscript>2</Subscript> nanoparticles using molecular layer deposited (MLD) polymer films

Pigment-grade anatase TiO₂ particles (160 nm) were passivated using ultra-thin insulating films deposited by molecular layer deposition (MLD). Trimethylaluminum (TMA) and ethylene glycol (E.G) were used as aluminum alkoxide (alucone) precursors in the temperature range of 100–160 °C. The growth rate varied from 0.5 nm/cycle at 100 °C to 0.35 nm/cycle at 160 °C. Methylene blue oxidation tests indicated that the photoactivity of pigment-grade TiO₂ particles was quenched after 20 cycles of alucone MLD film, which was comparable to 70 cycles of Al₂O₃ film deposited by atomic layer deposition (ALD). Alucone films would decompose in the presence of water at room temperature and would form a more stable composite containing aluminum, which decreased the passivation effect on the photoactivity of TiO₂ particles.     

Synthesis,characterization, and thermal stability of SiO<Subscript>2</Subscript>/TiO<Subscript>2</Subscript>/CR-Ag multilayered nanostructures

The controllable synthesis and characterization of novel thermally stable silver-based particles are described. The experimental approach involves the design of thermally stable nanostructures by the deposition of an interfacial thick, active titania layer between the primary substrate (SiO₂ particles) and the metal nanoparticles (Ag NPs), as well as the doping of Ag nanoparticles with an organic molecule (Congo Red, CR). The nanostructured particles were composed of a 330-nm silica core capped by a granular titania layer (10 to 13 nm in thickness), along with monodisperse 5 to 30 nm CR-Ag NPs deposited on top. The titania-coated support (SiO₂/TiO₂ particles) was shown to be chemically and thermally stable and promoted the nucleation and anchoring of CR-Ag NPs, which prevented the sintering of CR-Ag NPs when the structure was exposed to high temperatures. The thermal stability of the silver composites was examined by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Larger than 10 nm CR-Ag NPs were thermally stable up to 300 °C. Such temperature was high enough to destabilize the CR-Ag NPs due to the melting point of the CR. On the other hand, smaller than 10 nm Ag NPs were stable at temperatures up to 500 °C because of the strong metal-metal oxide binding energy. Energy dispersion X-ray spectroscopy (EDS) was carried out to qualitatively analyze the chemical stability of the structure at different temperatures which confirmed the stability of the structure and the existence of silver NPs at temperatures up to 500 °C.     

Electro-optic properties of epitaxial Sr<Subscript>0.6</Subscript>Ba<Subscript>0.4</Subscript>Nb<Subscript>2</Subscript>O<Subscript>6</Subscript> films grown on MgO substrates using Li<Subscript>x</Subscript>Ni<Subscript>2-x</Subscript>O buffer layer

Textured Li_xNi_2-xO (LNO) thin films have been fabricated on (001)MgO substrates by pulsed laser deposition technique. The as-deposited LNO films shows a conductivity of 2.5×10^-3 Ω m and possess a transmittance of about 35% in the visible region. Subsequent deposition of Sr_0.6Ba_0.4Nb₂O₆ (SBN60) thin film on these LNO-coated MgO substrates resulted in a textured SBN layer with a 〈001〉 orientation perpendicular to the substrate plane. Phi scans on the (221) plane of the SBN layer indicated that the films have two in-plane orientations with respect to the substrate. The SBN unit cells were rotated in the plane of the film by ± 8.2° as well as ± 45° with respect to the LNO/MgO substrate. Besides the highly (00l)-orientation, the SBN films also exhibited a dense microstructure as shown by scanning electron microscopy. The electro-optic coefficient (r₃₃) of the SBN film was measured to be 186 pm/V. On the basis of our results, we have demonstrated that the LNO film can be used as a buffer layer as well as a transparent bottom electrode for waveguide applications. The SBN/LNO heterostructure is also a suitable candidate for integrated electro-optics devices. PACS  42.79.Gn; 42.82.Et; 78.20.Ci     

Femtosecond pulsed-laser deposition of BaTiO<Subscript>3</Subscript>

The elemental composition and the surface morphology of thin films grown by laser ablation of barium titanate with femtosecond pulses at 620 nm laser wavelength have been systematically studied according to the experimental pulsed-laser deposition parameters : laser energy density, oxygen pressure, substrate temperature, target–substrate distance and substrate position (in- and off-axis geometry). Firstly, even at high temperature (700 °C), the deposits consist of coalesced particles up to 1-μm in size, mixed in a poorly crystallised tetragonal BaTiO₃ thin film. The particles formed in femtosecond pulsed-laser deposition induce a high surface roughness, which is observed whatever the experimental growth conditions and does not correspond to the droplets often observed during laser ablation in the nanosecond regime. As shown by plasma expansion dynamics, these particles propagate toward the substrate in the plasma plume with a low velocity, and are assumed to be produced by gas-phase reactions. Moreover, the cationic concentration evaluated through the Ba/Ti ratio strongly depends on the oxygen pressure in the ablation chamber and the angular position of the substrate along the normal to the target at laser impact. Indeed, the films appear to be enriched in the heavy element (Ba) when the substrate is located at high angular deviation. This fact is correlated to an increase in the lighter species (i.e. Ti) in the central part of the plasma plume. Received: 30 April 2002 / Accepted: 26 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +33-1/4354-2878, E-mail: millon@gps.jussieu.fr RID="**" ID="**"Also at: LSMCL, Université de Metz, 57078 Metz Cedex 3, France     

Characterization and electrical properties of high-<Emphasis Type="Italic">k</Emphasis> GdScO<Subscript>3</Subscript> thin films grown by atomic layer deposition

Gadolinium scandium oxide (Gd-scandate, GdScO₃) thin films were grown by atomic layer deposition (ALD) from β-diketonate precursors M(thd)₃ (M=Gd, Sc; thd=2,2,6,6-tetramethyl-3,5-heptanedionato) and ozone. The deposition parameters were optimized to produce films with the stoichiometric 1:1 metal ratio and a series of samples with nominal thicknesses of 5, 10, 15, and 20 nm were prepared. At 300 °C the metal precursor pulsing ratio Gd:Sc=5:6 yielded amorphous stoichiometric films and a growth rate of 0.21 Å/cycle. The films stayed amorphous up to 900 °C. The surface was probed with an AFM and the rms roughness was found to be 0.3 nm for the 5–20 nm thick films. The electrical properties of the as-deposited films proved to be very promising, with a dielectric constant of ～22 and leakage current density of 340 μA/cm², measured at -2 V.     

The effect of argon gas pressure on structural,morphological and photoluminescence properties of pulsed laser deposited KY<Subscript>3</Subscript>F<Subscript>10</Subscript>:Ho<Superscript>3+</Superscript> thin films

KY₃F₁₀:Ho³⁺ thin films were deposited by a pulsed laser deposition technique with Nd–YAG laser radiation (λ = 266 nm) on (100) silicon substrate. The XRD and FE-SEM results show improved crystalline structure for the film deposited at a pressure of 1 Torr. The AFM results show that the RMS roughness of the films increases with rise in argon gas pressure. The EDS elemental mapping shows Y-excess for all the films deposited under all pressures, and this is attributed to its higher mass and low volatility as compared to K and F. XPS analysis further confirmed Y-excess in the deposited films. Green PL emission at 540 nm was investigated at three main excitation wavelengths, namely 362, 416 and 454 nm. The PL emission peaks increase with rise in background argon gas pressure for all excitation wavelengths. The highest PL intensity occurred at excitation of 454 nm for all the thin films. In addition, faint red (near infrared) emission was observed at 750 nm for all the excitations. The green emission at 540 nm is ascribed to the ⁵F₄–⁵I₈ and ⁵S₂–⁵I₈ transitions, and the faint red emission at 750 nm is due to the ⁵F₄–⁵I₇ and ⁵S₂–⁵I₇ transitions of Ho³⁺.     

Temperature and frequency dependence of the ferroelectric characteristics of BaTiO<Subscript>3</Subscript> thin films for nonvolatile memory applications

Ferroelectric thin films of BaTiO₃ were successfully deposited on SiO₂/Si substrate under the optimal rf magnetron sputtering conditions, and their electrical and ferroelectric characteristics were discussed. The memory window, capacitance, threshold voltage and leakage current density of MFIS structure under different frequencies and temperatures were also reported. The variations of ferroelectric capacitance and threshold voltage would be attributed to the as-deposited BaTiO₃ films of MFIS structure as the temperature and frequency increased. Besides, the memory window, threshold voltage and leakage current density would be degraded from 4 V, 5 V and 8×10^-10 A/cm² to 2.5 V, 10 V and 5×10^-4 A/cm², respectively, as the temperature increased from 25 to 90 °C. PACS 77.84.-s; 81.15.Cd; 73.40.Qv; 51.50.+v; 67.80.Gb     

Synthesis and electrochemical performance of spherical LiNi<Subscript>0.8</Subscript>Co<Subscript>0.15</Subscript>Ti<Subscript>0.05</Subscript>O<Subscript>2</Subscript> cathode materials with high tap density

A series of spherical LiNi_0.8Co_0.15Ti_0.05O₂ cathode materials were synthesized through co-oxidation-controlled crystallization method followed by solid-state reaction at different calcination temperatures under oxygen flowing. The crystal structure and particles morphology of the as-prepared powders were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. All samples correspond to the layered α-NaFeO₂ structure with R-3m space group. The LiNi_0.8Co_0.15Ti_0.05O₂ prepared at 800 °C presents a better hexagonal ordering structure and better spherical particles and possesses a high tap density of 3.22 g cm^?3. Meanwhile, the NCT-2 sample exhibits an advanced electrochemical performance with an initial discharge capacity of 174.2 mAh g^?1 and capacity retention of 86.7 % after 30 cycles at 0.2 C.     

Studies on Structural,Morphological and Optical Properties of Chemically Deposited CdS<Subscript>1-x</Subscript>Se<Subscript>x</Subscript> Thin Films

The thin films of CdS_1-xSe_x were successfully deposited over glass substrates by chemical bath deposition technique. Cadmium acetate, thiourea and sodium selenosulfate were used as source materials for Cd²⁺, S^2? and Se^2? ions, while 2-mercaptoethanol was used as capping agent. The various deposition conditions such as precursor concentration, deposition temperature, pH and deposition time were optimized for the deposition of CdS_1-xSe_x thin films of good quality and the films were annealed at 200° and 300 °C. The structural, morphological, chemical and optical properties were examined by various characterization techniques and discussed in detail. The optical band gap of CdS_1-xSe_x thin film samples were estimated and found in the range from 2.11 to 1.79 eV for as-deposited and annealed thin films.     

A high efficient antireflective down-conversion Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Bi<Superscript>3+</Superscript>, Yb<Superscript>3+</Superscript> thin films

The high efficient antireflective down-conversion Y₂O₃:Bi, Yb films have been prepared successfully on Si(100) substrates by pulsed laser deposition (PLD) method, Upon excitation of ultraviolet photon varying from 300 to 400 nm, near-infrared emission of Yb³⁺ was observed for the film, can be efficiently absorbed by silicon (Si) solar cell. Most interestingly, there is a very low average reflectivity 1.46% for the incident light from 300 to 1100 nm. To the best of our knowledge, this is the lowest reflectance for the down-conversion thin films prepared by cost efficient method. The surface topography of the high efficient antireflective films can be controllably tuned through the substrate template regulation by optimizing process parameters. Besides, the results showed that there is a close relationship between luminescent property and morphology of the film. With the change of the surface morphology, the intensity of Bi³⁺ and Yb³⁺ emission peaks increase first and then decrease. The obtained results demonstrate that this film can enhance the Si solar cell efficiency through light trapping and spectrum shifting.     

Elevated electrochemical property of LiMn<Subscript>2</Subscript>O<Subscript>4</Subscript> originated from nano-sized Mn<Subscript>3</Subscript>O<Subscript>4</Subscript>

By employment of nano-sized pre-prepared Mn₃O₄ as precursor, LiMn₂O₄ particles have been successfully prepared by facile solid state method and sol-gel route, respectively. And the reaction mechanism of the used precursors of Mn₃O₄ is studied. The structure, morphology, and element distribution of the as-synthesized LiMn₂O₄ samples are characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). Compared with LiMn₂O₄ synthesized by facile solid state method (SS-LMO), LiMn₂O₄ synthesized by modified sol-gel route (SG-LMO) possesses higher crystallinity, smaller average particle size (~175 nm), higher lithium chemical diffusion coefficient (1.17 × 10^?11 cm² s^?1), as well as superior electrochemical performance. For example, the cell based on SG-LMO can deliver a capacity of 85.5 mAh g^?1 at a high rate of 5 °C, and manifests 88.3% capacity retention after 100 cycles at 0.5 °C when cycling at 45 °C. The good electrochemical performance of the cell based on SG-LMO is ascribed mainly to its small particle size, high degree of dispersion, and uniform element distribution in bulk material. In addition, the lower polarization potential accelerates Li⁺ ion migration, and the lower atom location confused degree maintains integrity of crystal structure, both of which can effectively improve the rate capability and cyclability of SG-LMO.     

High-temperature complex impedance and modulus spectroscopic studies of doped Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-BaTiO<Subscript>3</Subscript> ferroelectric ceramics

Lead-free Na_0.5Bi_0.5TiO₃ (NBT) and (1 ? x)Na_0.5Bi_0.5TiO₃ + xBaTiO₃ with x = 0.1 and 0.2 (where x = 0.1 and 0.2 are named as NBT1 and NBT2, respectively), (1 ? y)Na_0.5Bi_0.5TiO₃ + yBa_0.925Nd_0.05TiO₃ with y = 0.1 and 0.2 (where y = 0.1 and 0.2 are named as NBT3 and NBT4, respectively)-based relaxor ferroelectric ceramics were prepared using the sol-gel method. The crystal structure was investigated by X-ray diffraction (XRD) at room temperature (RT). The XRD patterns confirmed the presence of the rhombohedral phase in all the samples. The electrical properties of the present NBT-based samples were investigated by complex impedance and the modulus spectroscopy technique in the temperature range of RT–600 °C. The AC conductivity was found to increase with the substitution of Ba²⁺ ions to the NBT sample whereas it significantly decreased with the addition of Nd³⁺ ions. The more anion vacancies in Ba-added samples and the lower anion vacancies in Nd-added samples were found to be responsible for higher and lower conductivities, respectively.     

Two-dimensional electron gas at the interface of Ba<Subscript>0.8</Subscript>Sr<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript> ferroelectric and LaMnO<Subscript>3</Subscript> antiferomagnet

The temperature dependence of the electrical resistance has been studied for heterostructures formed by antiferromagnetic LaMnO₃ single crystals of different orientations with epitaxial films of ferroelectric Ba_0.8Sr_0.2TiO₃ deposited onto them. The measured electrical resistance is compared to that exhibited by LaMnO₃ single crystals without the films. It is found that, in the samples with the film, for which the axis of polarization in the ferroelectric is directed along the perpendicular to the surface of the single crystal, the electrical resistance decreases significantly with temperature, exhibiting metallic behavior below 160 K. The numerical simulations of the structural and electronic characteristics of the BaTiO₃/LaMnO₃ ferroelectric?antiferromagnet heterostructure has been performed. The transition to the state with two-dimensional electron gas at the interface is demonstrated.     

Effect of sintering temperature of Ce<Superscript>3+</Superscript>-doped Lu<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> phosphors on light emission and properties of crystal structure for white-light-emitting diodes

The effect of the sintering temperature of Ce³⁺-doped Lu₃Al₅O₁₂ (Ce-LuAG) phosphors on the emission and properties of the crystal structure was studied. A cathodoluminescence peak at 317 nm, which was assigned to lattice defects, was exhibited in addition to emission peaks at 508 and 540 nm for the Ce-LuAG phosphors. The intensities of the 317 nm emission peak for the phosphors with mean particle diameters of 5.0 and 10.0 µm formed at a low sintering temperature of 1430 °C were higher than those for the phosphors with mean particle diameters of 18.0 and 20.5 µm formed at a high sintering temperature of 1550 °C. In contrast, the electroluminescence spectra for fabricated white-light-emitting diodes (LEDs) using the phosphors revealed that the intensity of the peak at 540 nm was strong for the mean particle diameters of 18.0 and 20.5 µm. The intensity of the 540 nm peak, which is attributed to the 4f→5d transition of the Ce³⁺ activator, showed a dependence on the sintering temperature. The relationship between the optical properties and the lattice defects is discussed.     

Synthesis and Optical Characterization of Red-Emitting BaTa<Subscript>2</Subscript>O<Subscript>6</Subscript>:Eu<Superscript>3+</Superscript> Phosphors

Undoped and Eu³⁺ doped BaTa₂O₆ phosphors were synthesized via solid state reaction method and characterized by using XRD, SEM-EDS and photoluminescence (PL) analyses. The XRD results revealed that the crystal structure of BaTa₂O₆ allowed up to 10 mol% levels of Eu³⁺ ions due to the TTB characteristic network of adjacent octahedrals. SEM-EDS analyses confirmed the formation of BaTa₂O₆ structure and EuTaO₄ secondary phase. BaTa₂O_6:Eu³⁺ phosphors exhibited orange and red emissions at 592.2 nm and 615.7 nm in the visible region respectively. The Commission Internationale d’Eclairage (CIE) chromaticity coordinates of the BaTa₂O_6:Eu³⁺ phosphors that excited at λ _ex = 400 nm ranged from orangish-red to pinkish-red depending on increasing Eu³⁺ concentration.     

X-ray spectral analysis of the interface of a thin Al<Subscript>2</Subscript>O<Subscript>3</Subscript> film prepared on silicon by atomic layer deposition

The extent and phase chemical composition of the interface forming under atomic layer deposition (ALD) of a 6-nm-thick Al₂O₃ film on the surface of crystalline silicon (c-Si) has been studied by depthresolved, ultrasoft x-ray emission spectroscopy. ALD is shown to produce a layer of mixed Al₂O₃ and SiO₂ oxides about 6–8 nm thick, in which silicon dioxide is present even on the sample surface and its concentration increases as one approaches the interface with the substrate. It is assumed that such a complex structure of the layer is the result of interdiffusion of oxygen into the layer and of silicon from the substrate to the surface over grain boundaries of polycrystalline Al₂O₃, followed by silicon oxidation. Neither the formation of clusters of metallic aluminum near the boundary with c-Si nor aluminum diffusion into the substrate was revealed. It was established that ALD-deposited Al₂O₃ layers with a thickness up to 60 nm have similar structure.     

Deposition of conductive TiN shells on SiO<Subscript>2</Subscript> nanoparticles with a fluidized bed ALD reactor

Conductive TiN shells have been deposited on SiO₂ nanoparticles (10–20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH₃ as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of powder. TEM and XPS analysis showed that all particles were coated with homogeneous shells containing titanium. Due to the large specific surface area of the nanoparticles, the TiN shells rapidly oxidize upon exposure to air. Electrical measurements show that the partially oxidized shells are conducting, with apparent resistivity of approximately ~11 kΩ cm. The resistivity of the powders is strongly influenced by the NH₃ dose, with a smaller dose giving an order-of-magnitude higher resistivity.     

FMR Studies of Ultra-Thin Epitaxial Pd<Subscript>0.92</Subscript>Fe<Subscript>0.08</Subscript> Film

Magnetic anisotropies of 20 nm epitaxial film of palladium–iron alloy Pd_0.92Fe_0.08 grown on the (001) MgO substrate were studied. Ferromagnetic resonance (FMR) spectroscopy and vibrating sample magnetometry (VSM) were exploited to determine magnetic parameters of the film. It was found that the synthesized film reveals cubic anisotropy with tetragonal distortion. The simulated magnetic hysteresis loops, obtained utilizing the magnetic anisotropy constants taken from the FMR spectra analysis, agree well with those measured by VSM.     

Porous WO<Subscript>3</Subscript>/reduced graphene oxide composite film with enhanced electrochromic properties

The porous WO₃/reduced graphene oxide (rGO) composite films are prepared on indium–tin oxide (ITO) glass by sol-gel method. The mixture sol combines peroxotungstic acid solution with rGO dispersion reduced by ethylene glycol (EG). The excessive EG and other organic additives are subsequently removed by annealing, which leads to the formation of porous structure. Compared with pure WO₃ film, WO₃/rGO composite film shows improved electrochromic performance because of enhanced double insertion/extraction of ions and electrons. It realizes a large optical modulation (64.2 % at 633 nm), fast switching speed (9.5 s for coloration and 4.5 s for bleaching), good cycling stability as well as reversibility.