Electronic properties of cesium ultrathin coatings on the Ga-rich GaAs(100) surface

The cesium submonolayer coatings on the Ga-rich GaAs(100) surface at different coverages have been investigated by threshold photoemission spectroscopy. The electronic spectra of surface states and the ion-ization energies are analyzed. At a cesium coverage of about one-half the monolayer, the spectrum exhibits two narrow adsorption-induced bands below the Fermi level. This indicates that cesium atoms interacting with gallium dimers occupy two nonequivalent positions. It is found that the gallium broken bonds are saturated at the cesium coverage of ～0.7 monolayer, and the adsorption bonding is predominantly covalent in character. At the coverages close to the monolayer, broad bands with energies of 1.9, 2.05, and 2.4 eV have been observed for the first time. These bands can be associated with the excitation of cesium islands, cesium clusters, and surface cesium plasmon, respectively. The results obtained suggest two adsorption stages characterized by the formation of strong and weak bonds.     

Excitation of 2D plasmons in a Cs/W(110) system

The evolution of surface photoemission spectra was investigated for a Cs/W(110) system with metastable Cs coatings larger than a monolayer. It is demonstrated that 2D plasmons can be detected by threshold photoemission spectroscopy. Three photoemission peaks were observed, whose dependence on the Cs adsorption dose showed a complicated behavior. The peaks may be due to the photoinduced excitation of a plasmon in quasi-2D Cs clusters, a surface Cs plasmon, or an interface Cs-W plasmon.     

Oscillations in the threshold photoemission spectra of GaN(0001) with submonolayer Cs coverages

It is found that Cs adsorption on the n-type GaN(0001) surface generates an unusual change in the electronic properties of the surface and the near-surface space-charge layer, which leads to the appearance of photoelectron emission upon excitation in the transparent region of GaN. It is established that the photoemission is due to the formation of quasimetallic states induced by Cs adsorption in the band-bending region near the surface. The behavior of the photoemission threshold upon excitation by s-polarized light is studied as a function of the Cs coverage. It is found that the minimum value of the threshold corresponds to ～1.4 eV at a concentration of Cs atoms of ～4.5×10¹⁴ atom/cm² in the submonolayer coverage. A new effect is revealed, namely, the appearance of oscillations in the spectral curves of threshold photoemission. A model is proposed for photocurrent oscillations that takes into account the formation of quasimetallic states in the near-surface layer of GaN band bending and the occurrence of interference in the GaN slab upon light irradiation in the transparent region.     

Charge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces

It is found that ultrathin cesium and barium coatings radically change the electronic properties of the surface and the near-surface region of epitaxial n-GaN(0001) layers. A charge accumulation layer serving as a quasi-two-dimensional electronic channel is first formed by adsorption on the surface of a semiconductor. It is revealed that photoemission from the accumulation layer is excited by visible light from the transparency region of GaN and is characterized by a high quantum yield. It is found that the photoemission thresholds hν _s and hν _p for s-and p-polarized excitation are equal to each other and correspond to the work function. The lowest work function for Cs,Ba/n-GaN interfaces is observed at Cs or Ba coverages close to 0.5 monolayer. Two bands induced by the local interaction of cesium (barium) adatoms with gallium dangling bonds are detected in the electronic spectrum of surface states of Cs,Ba/n-GaN interfaces. An oscillation structure is observed in spectral dependences of the photoyield. This effect is new for photoemission. A model of the effect is proposed. It is found that electronic and photoemission properties of the interfaces correlate with the structural perfectness of the epitaxial n-GaN(0001) layers.     

Electronic structure and adsorption properties of the system Cs/O/W(110)

Comparative studies are carried out of the Cs/O/W(110) and Cs/W(110) adsorption systems. The method of threshold photoemission spectroscopy is used to study the work function and electronic structure in the energy region near the Fermi level as functions of the sub-monolayer cesium coverage. A significant increase of the saturation cesium coverage is observed on the O/W(110) surface. A new adsorption-induced surface band is observed in the electronic spectrum of the system Cs/O/W(110) with a binding energy ∼0.7 eV. For coverages of about one monolayer metallization of the adsorbed layer is observed. It is shown that the electronic structures of the systems Cs/O/W(110) and Cs/W(110) are similar for low coverages. A difference in the adsorption properties for these two systems occurs for coverages close to one monolayer, which is explained by the creation of new interaction centers of the Cs adatoms on the W(110) surface in the presence of oxygen. Fiz. Tverd. Tela (St. Petersburg) 39, 1683–1686 (September 1997)     

LEED-Auger characterization of GaAs during activation to negative electron affinity by the adsorption of Cs and O

A combination of low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) has been used to study the formation of the negative electron affinity (NEA) condition on surfaces of p-type, degenerate, (100) and (111) GaAs. Activation to NEA is achieved by adsorbing Cs and O onto atomically clean GaAs in repetitive cycles of first Cs and then O. Before activation, the clean GaAs surfaces exhibit their characteristic LEED patterns. However, once obtained, there is no significant correlation between the quality of these LEED patterns and the final activation. The adsorption of both Cs and O during activation to NEA is amorphous. Auger measurements have shown that the first photoemission maximum occurs after the adsorption of about a half monolayer of Cs. The initial O adsorption occurs on the GaAs surface between the Cs atoms. The adsorbed O interacts strongly with Cs at any stage during the activation. Peak photosensitivities, after completion of the Cs and O adsorptions, were in the range 400 to 1100 $\text{μA}\text{lumen}$. The final activation does not correlate with the quantity of Cs and O on the surface. The temperature dependence of the photosensitivity of NEA GaAs (100) activated at ?170°C has a broad maximum at about ?50°C and a subsidiary maximum at about 160°C. In addition, the photoemission at ?170°C can be either increased or decreased by having heated the sample up to 200°C, even though no Cs or O desorption has taken place. These results can be traced to changes in work function rather than to changes in bulk properties. While the LEED patterns from clean GaAs show no structural changes with temperature, such changes are observed when Cs is on the surface. It is suggested that changes both in photoemission and in LEED patterns are due to the temperature-induced mobility of Cs on GaAs. An atomic model for the NEA surface is discussed in terms of a layer of Cs and O atoms about 10 Å thick on the GaAs.     

Atomic reconstructions and electronic states on the GaAs(001) surface with the adsorbed Sb and Cs layers

In experiments on the adsorption and thermal desorption of Cs on GaAs(001) surfaces with various atomic reconstructions and compositions including those enriched in the cation (gallium) and in the anions (arsenic and antimony), the correlation in the behavior of the atomic structure and the surface electronic states, which determine the band bending, has been established. The cesium adsorption on the anion-rich surfaces results in both the similar disordering of the atomic structure and in the close dose dependences of the band bending, while the adsorption on the Ga-rich surface is ordered and results in the qualitatively different dose dependence, which has several maxima and minima. In the Cs desorption and the subsequent adsorption-desorption cycles, the stabilizing effect of Sb on the atomic structure and the electronic states of the Cs/Sb/GaAs(001) surface has been revealed.     

NEA光电阴极的(Cs,O)激活工艺研究

在自行研制的负电子亲和势光电阴极性能评估实验系统上,首次利用动态光谱响应技术和变角X射线光电子能谱(XPS)表面分析技术研究了GaAs光电阴极的(Cs,O)激活工艺.获得了首次导Cs、(Cs,O)导入以及(Cs,O)循环的优化激活条件.XPS分析给出GaAs(Cs,O)的最佳激活层厚度为0.82 nm,首次导Cs达到峰值光电发射时的Cs覆盖率为0.71个单层.在优化激活条件下,可以在国产反射式GaAs上获得1025 μA/lm的积分灵敏度.     

Surface states and accumulation nanolayer induced by Ba and Cs adsorption on the n-GaN(0 0 0 1) surface

The Ba and Cs adsorption on the n-GaN(0 0 0 1) surface has been studied in situ by the threshold photoemission spectroscopy using s- and p-polarized light excitation. Two surface bands induced by Ba (Cs) adsorption are revealed in surface photoemission spectra below the Fermi level. The surface-Fermi level position is found to be changed from significantly below the conduction band minimum (CBM) at clean n-GaN surface to high above the CBM at Ba, Cs/n-GaN interfaces, with the transition from depletion to electron accumulation occurring at low coverages. Photoemission from the accumulation nanolayer is found to excite by visible light in the transparency region of GaN. Appearance of an oscillation structure in threshold photoemission spectra of the Ba, Cs/n-GaN interfaces with existing the accumulation layer is found to originate from Fabry–Perot interference in the transparency region of GaN.     

Charge accumulation layer in Cs,Ba/<Emphasis Type="Italic">n</Emphasis>-GaN(0001) ultrathin interfaces: Electronic and photoemission properties

Experimental studies and theoretical calculations of the photoemission from Cs/n-GaN(0001) and Ba/n-GaN(0001) ultrathin interfaces were carried out. The electronic properties of the interfaces were studied in situ using threshold photoemission spectroscopy under vacuum at a residual pressure of P ～ 5 × 10^?11 Torr. A new effect was revealed, namely, photoemission with a high quantum yield under excitation with light in the transparency region of GaN. It was shown that adsorption of Cs or Ba on n-GaN brings about the formation of a quasi-two-dimensional electron channel, i.e., a charge accumulation layer directly near the surface. The dependences of the photoemission spectra and work function on the thickness of Cs and Ba coatings were investigated. It was established that adsorption of Cs and Ba leads to a sharp decrease in the work function by ～1.45 and ～1.95 eV, respectively. The photoemission spectra were calculated, and parameters of the accumulation layer, such as the energy position of the layer below the Fermi level for different Cs and Ba coverages, were determined. It was demonstrated that the energy parameters of the accumulation layer on the n-GaN(0001) surface can be controlled by properly varying the Cs or Ba coverage. The layer thickness was found to reach a maximum for a cesium coverage of ～0.5 monolayer.     

Photoemission studies of ultrathin Cs,Ba/InN interfaces

Cs/InN and Ba/InN interfaces were studied by UV photoelectron spectroscopy in the submonolayer coverage range for the first time. Normal photoemission spectra from the valence band and spectra from In 4d, Ba 5p, Ba 4d, and Cs 5p core levels were investigated in the excitation energy range of 60–800 eV. It was found that metallization of the interface and narrowing of the valence band is observed upon increasing coverage.     

Charge accumulation in ultrathin Cs / n - GaN and Cs / n - InGaN interfaces

We report on the observation of new phenomena that arise under Cs adsorption on n-GaN(0001) and n-InGaN(0001) surfaces. First, an extremely highly quantum efficient photoemission has been found by excitation with visible light in the transparency region of GaN and InGaN. The photoemission is revealed to appear due to the formation of an electron accumulation layer in the vicinity of the surfaces. Second, a large variety of band bending and potential wells are provided by the Cs coverages. The accumulated charge density at the n-InGaN surface is much stronger than that at the n-GaN surface. Third, a new effect is revealed, namely, the appearance of an oscillation structure in the spectral dependences of the threshold photoemission. A model concept is proposed for photocurrent oscillations that takes into account the formation of an accumulation layer and the multiple-beam interference in parallel-sided GaN or InGaN samples.     

The study of vicinal GaAs( 100) surfaces by PAX

The adsorption of xenon at low temperatures on both GaAs(100) and vicinal surfaces has been studied using ultraviolet photoemission spectroscopy. The Xe 5p peaks show a characteristic shift to lower binding energy with surface As-depletion. Additional weak emission features seen on the vicinal planes, shifted by around 0.45 eV to higher binding energy, are attributed to Xe adsorbed at the step sites on such surfaces.     

Evolution of Photocurrent during Coadsorption of Cs and O on GaAs （100）

The photocurrent and spectral response characteristics of gallium arsenide （GaAs） are obtained by a multiinformation measurement system, and the evolution of the photocurrent versus the Cs：O flux ratio is investigated. The experimental results show that the photocurrent increases approximately exponentially after the first exposure to Cs until a maximum sensitivity is reached, the detailed evolution process and the ultimate photocurrent are different for different samples. These differences are analysed, and according to the process of coadsorption of Cs and oxygen on GaAs, an equation is presented to explain the increase of photocurrent.     

Photoemission studies of the electronic structure of III–V semiconductor surfaces

The photoemission technique using synchroton radiation in the photon energy range 5–450 eV has been applied to the study of the electronic structure of some III–V semiconductor surfaces, prepared by cleavage in situ under ultrahigh vacuum conditions, ? 10^?11 Torr. For p-type GaAs(110), the Fermi level is pinned at the top of the valence band and thus no filled surface states extend into the band-gap. The situation is more complicated for n-type GaAs(110), where band bending easily can be introduced by extrinsic effects (impurities, cleavage quality, etc.) and push the Fermi level down to about midgap. Chemical shifts of inner core levels (3d for Ga and As) are used to obtain information on the bonding site of oxygen on the (110) surface. GaAs(110) can be exposed to atmospheric pressure of molecular oxygen without breaking the bonds between the surface atoms and the bulk. Oxygen is predominantly bonded to the As atoms on the surface. The oxidation behavior is strikingly different for GaSb(110) with formation of gallium and antimony oxides on the surface directly upon oxygen exposure. Heavier oxidation of GaAs(110) and breaking of the surface bonds will also be reported.     

Self-organization of nanostructures on the n-GaN(0001) surface in the Cs and Ba adsorption

A regular self-organized 2D nanostructure of a new type of nanocombs has been created in situ in an ultrahigh vacuum on the n-GaN(0001) surface. The nanostructure is formed as a result of multilayer adsorptions of Cs and Ba. The structure is highly regular in the microrange, arranged in the form of combs 60–70 nm in diameter with a wall height of about 7 nm. It has been revealed that the nanostructure has a quasi-metallic conduction, a low work function of about 1.4 eV, and a high quantum yield of photoemission under light excitation in the GaN transparency region. A self-organization model is proposed, which implies the formation of a surface 2D longperiod incommensurate phase interacting with the superstructure of the Cs⁺ and Ba²⁺ ion clusters with allowance for the polaron compensation on the GaN surface.     

Cs adsorption on a polar NbC(111) surface: photoemission and auger electron spectroscopy studies

The Cs adsorption process on a NbC(111) surface has been studied with core-level photoemission spectroscopy (PES) and Auger electron spectroscopy (AES). Coverage-dependent Cs 4d core-level PES shows that the polarization-depolarization transition of the Cs overlayer occurs in the coverage region of 0.5 ≤ θ ≤ 0.8 ML where the work function shows a minimum value. The charge transfer in the initial stage of adsorption is investigated using valence-related AES, and it is found that the transfer of the Cs 6s charge to the substrate occurs in the polarized phase.     

Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface

A nonmonotonic behavior of band bending φ _S as a function of cesium coverage ? on the Cs/GaAs(001) surface is observed in the form of several maxima and minima. This behavior indicates the formation of the quasi-discrete spectrum of the adatom-induced electronic surface states. The hysteresis of the φ _S (?) dependence under adsorption and subsequent thermodesorption of cesium indicates the metastability of the Cs/GaAs(001) system.     

Franck-condon-broadened angle-resolved photoemission spectra predicted in LaMnO3

The sudden photohole of least energy created in the photoemission process is a vibrationally excited state of a small polaron. Therefore the photoemission spectrum in LaMnO3 is predicted to have multiple Franck-Condon vibrational sidebands. This generates an intrinsic line broadening approximately 0.5 eV. The photoemission spectral function has two peaks whose central energies disperse with bandwidth approximately 1.2 eV. Signatures of these phenomena are predicted to appear in angle-resolved photoemission spectra.