注入电流对垂直腔面发射激光器横模特性的影响

对980nm氧化限制型垂直腔面发射激光器横模进行测试和研究,理论上从时间、空间变量的速率方程出发,利用空间积分法分析了典型电注入参数对弱折射率导引垂直腔面发射激光器(VCSELs)横模行为的影响,通过实验测试,得到VCSELs的横模光场分布情况,并与理论分析进行对比,得出相应的实验结果,在氧化孔径不变的情况下,随着注入电流的增加,载流子分布从有源区中心向边缘移动,模式从低阶基模向高阶模转变,并发生了较强的模式竞争以及载流子空间烧孔效应,最终导致基模强度的降低.另一方面,通过比较不同注入孔径下高阶模的发生时 关键词： 横模 垂直腔面发射激光器 空间烧孔现象 模式竞争     

平行光注入多横模1550nm垂直腔面发射激光器的非线性动力学实验研究

实验研究了平行光注入下多横模1 550nm垂直腔面发射激光器(1 550nm-VCSEL)输出的非线性动力学特性.对于一个在自由运行时腔内同时存在基横模和一阶横模(高阶模)的1 550nmVCSEL,其两横模的主激射模均为Y偏振模式(Y-LP),当受到偏振方向沿自由运行时主激射模式偏振方向的外部光注入(即平行注入)时,实验研究结果表明:当平行注入光的频率ν_(inj)更临近基横模YLP频率ν_(fy)时(此时频率失谐Δν_f定义为Δν_f=ν_(inj)-ν_(fy)),在注入光强度P_(inj)增加的过程中,基横模Y-LP呈现多种动力学状态,而高阶模Y-LP出现的动力学状态相对较少,且能量逐渐减小.当P_(inj)增加到一定值时,高阶模Y-LP完全被抑制,此时1 550nm-VCSEL处于单模工作状态,即实现了基横模YLP的模式选择.随Δν_f的逐渐增加,实现基横模Y-LP模式选择所需的最小注入光强度P_(inj,min)先减小,达到一个最小值后再逐渐增加;在给定的Δν_f条件下,P_(inj,min)随偏置电流I增加而增大.当平行注入光的频率ν_(inj)更靠近高阶模Y-LP的频率ν_(hy)时(此时频率失谐Δν_h定义为Δν_h=ν_(inj)-ν_(hy)),在P_(inj)增加的过程中,高阶模Y-LP和基横模Y-LP均呈现出多种非线性动力学状态,但实验过程中未观察到基横模Y-LP完全被抑制的现象,即未实现高阶模Y-LP的模式选择.     

无源空心波导谐振腔横模模式的竞争与转换

本文提出并采用非对角化的分析法研究无源空心波导谐振腔横模模式间的竞争与转换。从计算EH_(1m)类波导本征模在腔内的转换矩阵中发现:在模式的传输过程中,存在着横模模式间的相互转换,而且其互换的能量不相等。在一定的腔设计条件下,会出现高阶横模向低阶横模的能量净流动,这有利于谐振腔横模模式的选择和基模输出功率的提高。     

猫眼腔激光器的横模变换与频率分裂

为了产生多种激光横模,以前的系统相对比较复杂,而且一般只能产生基横模和低阶横模,很难产生高阶横模,同时也很难观察到模竞争中一个频率抑制另一个频率的变化过程。基于猫眼谐振腔激光器和频率分裂技术,提出了一种新型的激光原理综合实验系统。该系统利用猫眼逆向器作为He-Ne激光器的一个腔镜,通过调节猫眼逆向器中两镜片间距可输出包括基横模、低阶横模、高阶横模在内的十余种典型横模,并可完成纵模、偏振、出光带宽等多种激光基本特性的实验。同时在基横模状态下,利用谐振腔内加入的石英晶体片可实现激光频率分裂及其频差调节。在此基础上又可实现完整的模竞争过程的观察。     

基于双光反馈垂直腔面发射激光器的双信道混沌同步通信

利用双光反馈垂直腔面发射半导体激光器(VCSELs) 两个正交偏振模式输出的两个混沌信号作为混沌载波, 构建了一个双信道的混沌保密通信系统, 并对该系统的通信性能进行了数值仿真研究.研究结果表明: 通过合理的选取反馈参量, 双光反馈VCSELs两个偏振模式输出的混沌信号能很好地隐藏外腔反馈延时特性; 双光反馈VCSEL两个偏振模式输出的混沌信号通过偏振保持注入到接收VCSEL中, 在强注入锁定条件下可以实现很好的混沌同步, 同步性能对频率失谐的容忍性随着注入强度的增加而加强; 在附加混沌调制加密方式下, 500 Mbit/s的信号在传输过程中能够得到很好的隐藏, 同时在接收端可以成功解调; 随着通信速率的增加, Q因子呈现下降的趋势, 但对于 6 Gbit/s的信息, Q因子仍大于6. 关键词： 垂直腔面发射激光器 双光反馈 双信道 混沌通信     

注入电流引起质子轰击VCSEL中的模式竞争

为了分析质子轰击垂直腔面发射激光器(VCSEL)中注入电流引起的激光模式竞争过程,在三维空间中对VCSEL激射后光电热进行了研究。给出仿真光电热的方程之后,在室温连续工作条件下,对电流孔半径r为4μm、阈值电流Ith为4.5 m A的VCSEL进行自洽求解。当注入电流Iin分别为5.0,5.5,6.0 m A时,得到了对应的外加电压和输出光功率,并绘制了VCSEL的电势、注入电流、载流子、光场和热场的空间分布,给出了连续工作下输出光功率随注入电流变化的曲线。仿真结果表明:随着注入VCSEL中的电流增加,电流密度增大,激光的横向基模和横向一阶模式同时增强。横向一阶模式增加的强度及扩展的范围大于横向基模,激光输出能量逐渐向横向一阶模式过渡,横向模式竞争的同时产生载流子空间烧孔,因此在电流孔半径r≥4μm的VCSEL中,连续工作激光模式不稳定。     

互注入垂直腔表面发射激光器的多次偏振转换特性研究

基于垂直腔表面发射激光器(VCSELs)的自旋反转模型, 研究了互注入VCSELs系统中参数连续变化所引起的多次偏振转换(PS)特性. 研究结果表明: 连续改变互注入强度ξ、两个互注入VCSELs中一个激光器的激射频率以及同时连续改变两个激光器的激射频率, 均可产生多次的PS. 详细分析了上述三种参数连续变化所引起的多次PS的特性, 并讨论了耦合延时时间对多次PS特性的影响.     

管道有源噪声控制中壁面分布次级声源的空间分布优化

为了改进管道中高阶模式声波的有源控制效果,研究了壁面分布次级声源的空间分布优化问题。首先提出管道中次级声源独立控制高阶模式声波的理论模型,然后推导次级声源在管道中各方向上空间分布对控制高阶模式声波的贡献,得到了次级声源空间分布的优化准则。通过将空间分布离散化,采用最小化管道中声能流的控制策略得到次级声源的最优驱动强度,最后通过数值仿真对比最优驱动强度时各种次级声源空间分布对控制性能的影响,验证了通过优化次级声源空间分布能显著提高控制效果。仿真结果表明,当次级声源分布于管道所有壁面且沿管道轴向分布范围较大时,高阶模式的控制效率最高。     

基于腔内球差选模产生高阶拉盖尔-高斯模式激光

本文报道了基于腔内球差在端泵Nd:YVO₄激光器中选择单一高阶拉盖尔-高斯(LG)振荡模式的实验研究.在激光谐振腔内使用短焦距透镜引入明显的球差,使具有不同光斑半径的各阶LG模式的光路在空间上发生分离,从而实现对模式的选择作用,1.03 W泵浦功率下线偏振1064 nm激光能够在LG_0,±10和LG_0,±33之间以单横模工作.分析发现适当的横模间球差是抑制边模、选择单一高阶LG模式的必要条件,而过大的球差又会导致单一LG模式自身遭受明显的损耗,不利于产生高阶的LG模式输出.据此进一步优化实验参数,获得了角向指数m达到±75的高阶LG模式输出.     

基于外光注入互耦合垂直腔面发射激光器的混沌随机特性研究

通过在互耦合垂直腔面发射激光器(VCSELs)系统中增加外光注入, 建立了一种基于偏振可调光反馈VCSEL驱动互耦合VCSELs混沌系统模型, 分析了增加外光驱动对互耦合激光器随机特性的影响. 以不可预测度作为随机特性的评价指标, 采用信息论中的排列熵作为相应量化工具, 对系统输出混沌信号的不可预测性进行定量分析.数值研究了光强度、时延、偏振旋转角度以及驱动激光器与耦合激光器间的频率失谐对输出信号随机特性的影响.结果表明: 外光注入能够增大互耦合VCSELs输出混沌信号的排列熵, 即外光注入能够有效提高耦合系统的随机特性; 驱动激光器可调偏振片偏转角度调节到45° 附近, 注入强度适中, 满足耦合强度大于驱动激光器自反馈强度条件, 系统输出信号的排列熵较大; 在耦合时延与驱动激光器反馈时延不相等的同时, 增加驱动激光器与耦合激光器频率失谐, 外光注入互耦合VCSELs的随机特性能够得到进一步提高.     

Influences of the Current Transverse Profile on the Transverse Mode Competition of VCSELs Diodes

A spatially independent model of vertical-cavity surface-emitting lasers (VCSELs) is derived by integrating the spatially dependent rate equations over the cross section of the cavity of a VCSEL. The angular and radial non-uniformities of the injection current are taken into account. The well-known LP modes of a weakly-guiding cylindrical waveguide are employed to describe the transverse modal structure in the VCSEL cavity. This model is solved in a self-consistent way by using the 4th order Runge-Kutta method. The dependence of transverse mode competition on the current intensity, the angular and radial non-uniformities of the injection current, and the geometrical parameters of the electrical contact are thoroughly investigated and analyzed. The results are useful to the optimum design of the optical transverse modal structure of VCSELs.     

Numerical Investigation of the Effects of the Injection Current on the SHB-Effects of VCSEL''s

A spatially independent model of vertical-cavity surface-emitting lasers (VCSEL's) is built up in this paper by integrating the spatially dependent rate equations over the cross section of the active reigon of VCSEL's. The LP cosine modes in a weakly guiding cylindrical waveguide are used to represent the transverse modes in the VCSEL's cavity. This model is performed numerically with the 4^th order Runge-Kutta method in a self-consistent way. The dynamic and steady state characteristics of the multi-transverse mode competitions are investigated in detail. Different kinds of injection currents such as a disk-contact and ring-contact injection current are employed in these numerically implementations. Some interesting results are obtained and analyzed detailedly.     

Enhanced single-fundamental LP01 mode operation of 650-nm GaAs-based GaInP/AlGaInP quantum-well VCSELs

Minimal optical attenuation of plastic (polymer) optical fibres (POFs) corresponds to the 650-nm wavelength. Currently the GaInP/AlGaInP quantum-well (QW) oxide-confined (OC) vertical-cavity surface-emitting diode lasers (VCSELs) are undoubtedly the laser devices most suited to be used in 650-nm POF optical communication, for which the stable single-fundamental-mode LP₀₁ emission (SFM) is definitely the one most desired. In the present paper, the comprehensive fully self-consistent VCSEL model is used to examine mode selectivity of the above VCSELs. An increase in the VCSEL active-region diameter leads to a gradual modification of the current injection into this region and subsequent carrier radial diffusion within it before their recombination, which is followed by an essential transformation of active-region optical-gain profiles deciding upon an excitation of successive transverse modes. In standard arsenide OC VCSELs, SFM operation is usually limited to relatively small active regions. But for a room-temperature continuous-wave operation of the GaInP/AlGaInP VCSELs, the fundamental LP₀₁ mode remains surprisingly the lowest-threshold one up to relatively large active regions of 9-μm diameters. Nevertheless, in such VCSELs, thresholds of many LP modes become very similar to one another, which leads to their relatively poor mode selectivity and an unwanted multi-mode operation for higher output powers.     

VCSEL structures used to suppress higher-order transverse modes

Currently unwanted excitation of higher-order transverse modes is the most serious drawback of vertical-cavity surface-emitting diode lasers (VCSELs) limiting their possible applications. In the present paper, various methods used to suppress those modes are described and their effectiveness is compared. It is well known that, because of a nearly uniform current injection into their active regions, small-aperture VCSELs without any modification offer quite high single-fundamental-mode (SFM) output. However, their series resistance is often too high, which aggravates their high-modulation performance. Similarly uniform current injection may be also achieved with the aid of a tunnelling junction. Generally, methods suppressing higher-order modes take advantage of higher optical gain within the central part of the active region, higher radiation losses outside this region and/or higher central mirror reflectivity. Currently, applications of a tunnel junction, an impurity-induced disordering or an inverted shallow surface relief seem to be the simplest and the most effective methods. The deep etched holey structure or the ARROW structure enable obtaining similar single-mode output powers but they may be used in special cases only because of their complex technology. Photonic crystals may probably enable more advanced mechanisms of suppressing higher-order modes in future because currently their application seems to be still far from being optimised.     

Towards the transverse mode-locking of oxide-confined VCSELs

We have investigated the lasing modes of oxide-confined vertical-cavity surface emitting lasers (VCSELs). The individual Laguerre–Gaussian modes have been spectrally and spatially resolved with scanning confocal microscope with time resolution of 4 ps. Subject to the injection of ultrafast laser pulses, the VCSEL showed irregular pulsed emission which indicates the potential for transverse mode-locking of the VCSEL.     

Novel single-transverse-mode control of VCSELs with dielectric mode filter

We establish a novel method of controlling the transverse modes of vertical cavity surface emitting lasers(VCSELs)to achieve 1 mW single-fundamental-mode lasing. A dielectric mode filter is installed on top of the VCSEL. The dielectric layer(SiO_2) is deposited and patterned to modify the mirror reflectivity across the oxide aperture via antiphase reflections.This mode selection is nondestructive and universally applicable for other structures under single transverse mode. Destructive etching techniques(dry/wet) or epitaxial regrowth are also not required. This method simplifies the preparation process and improves the repeatability of the device. Measurements show that under continuous-wave current injection, the side-mode suppression ratio exceeds 30 dB.     

Transverse-mode selectivity in possible nitride vertical-cavity surface-emitting lasers

Excitation of various transverse modes in possible nitride vertical-cavity surface-emitting lasers (VCSELs) is investigated and compared using the effective frequency optical model. In the comparative analysis of laser mode selectivity, two distinctly different configurations of possible nitride VCSELs are considered: the traditional VCSEL design with both (n-side and p-side) ring contacts as well as the uniform-current-injection (UCI) VCSEL design. Our simulation reveals that, during the continuous-wave device operation at room temperature, a multi-mode operation dominated by higher-order transverse modes is typical for traditional nitride VCSEL configurations whereas a desirable single-mode (based on the fundamental LP₀₁ mode) operation turns out to be characteristic for the wide current range in UCI ones. The above different threshold device behaviours are an immediate consequence of essentially different current-spreading phenomena in both VCSEL designs, resulting in completely different not only gain profiles but also temperature distributions within the laser active regions of both VCSELs. Seemingly similar behaviour has been also reported in arsenide VCSELs but it is expected to be much more severe in the case of nitride ones as a result of much higher both electrical resistivities of p-type nitrides and their temperature derivatives of refractive indices.     

光反馈诱发长波长垂直腔面发射激光器低功耗偏振开关

基于扩展的自旋反转模型,对光反馈诱发下长波长垂直腔面发射激光器中的低功耗偏振开关进行了理论研究.研究表明:长波长垂直腔面发射激光器在自由运行下未能获得的偏振开关现象,可以通过引入中等强度的偏振旋转光反馈来实现.对比强弱两种不同的线性色散效应,发现了一些有趣的现象:弱线性色散条件下更易于在低注入电流下获得偏振开关,并且产生偏振开关所需的反馈强度具有更大的调控范围;强色散效应中未能始终获得偏振开关,会出现两模共存区,并且偏振开关出现的注入电流值较高.同时,观察到的偏振模跳变和多偏振开关现象类似于短波长垂直腔面发射激光器,因而证实这两类激光器在偏振开关的本质规律上是相似的.此外,还对长波长垂直腔面发射激光器不易在低注入电流下获得偏振开关的原因进行了分析,并给出了合理的解释.     

基于双光注入锁定1550 nm垂直腔表面发射半导体激光器产生可调谐毫米波

基于自旋反转模型, 对双光注入下1550 nm 垂直腔表面发射半导体激光器(1550 nm-VCSEL)的非线性动力学行为进行了理论分析和数值仿真研究. 结果表明: 当一个中心波长位于1550 nm 的副VCSEL(S-VCSEL)同时受到来自两个主VCSELs (M-VCSELs)的光注入时, 在适当的注入条件下, S-VCSEL可处于双光注入锁定态. 此时, S-VCSEL中的两偏振模式均呈现频率为两注入光频率之差的周期性振荡, 输出的光谱仅包含两个主频率部分, 即光谱具有单边带特征. 因此, 基于双光注入下S-VCSEL的周期性振荡可以获得两个相互正交的光毫米波. 通过调节两个M-VCSELs之间的频率差异可使毫米波频率在较大范围内连续可调, 通过调节系统参量可以控制毫米波功率以及调制深度. 关键词： 垂直腔表面发射激光器 双光注入 毫米波 调制深度