Luminescence of ZnWO4 and CdWO4 thin films prepared by spray pyrolysis

Thin films of ZnWO₄ and CdWO₄ were prepared by spray pyrolysis and the structural, optical, and luminescence properties were investigated. Both ZnWO₄ and CdWO₄ thin films showed a broad blue-green emission band. The broad band of ZnWO₄ films was centered at 495 nm (2.51 eV) consisted of three bands at 444 nm (2.80 eV), 495 nm (2.51 eV) and 540 nm (2.30 eV). The broad band of CdWO₄ films at 495 nm (2.51 eV) could be decomposed to three bands at 444 nm (2.80 eV), 495 nm (2.51 eV) and 545 nm (2.28 eV). These results are consistent with emission from the WO₆⁶⁻ molecular complex. The luminance and efficiency for ZnWO₄ film at 5 kV and 57 μA/cm² were 48 cd/m² and 0.22 lm/w, respectively, and for CdWO₄ film the values were 420 cd/m² and 1.9 lm/w.     

Effect of alkali-metal doping on photoluminescence of CdS films

It is established that doping of CdS polycrystalline films with alkaline metals (Li, Na, K, Cs) results in an increase of luminescence intensity by 3–5 times compared with pure films. This increase is accounted for by the placement of alkaline-metal ions in V _Cd ²⁻ cation vacancies, which are nonradiative recombination centers in these films. From the dependences of the luminsecence intensity of the doped films on the synthesis conditions (deposition temperature, concentration of doping impurities, type of doping metal), the parameters that ensure the maximum luminescence intensity of the films are determined as T_dep ≈ 450°C and C_Me = 1·10⁻⁵ at %. The luminescence intensity decreases by 1–3% upon exposure of the films to UV light (λ_max = 365 nm, I = 10²¹ quanta·sec·cm⁻¹) for several hours. This is indicative of the stability of these films against UV radiation. __________ Translated from Zhurnal Prikladnoi Spektroskopii Vol. 74, No. 3, pp. 362–366, May–June, 2007.     

Luminescence of CaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript>:Eu crystals

We have studied photoluminescence and thermoluminescence (PL and TL) in CaGa₂Se₄:Eu crystals in the temperature range 77–400 K. We have established that broadband photoluminescence with maximum at 571 nm is due to intracenter transitions 4f⁶ 5d–4f⁷ (⁸S_7/2) of the Eu²⁺ ions. From the temperature dependence of the intensity (log I–10³/T), we determined the activation energy (E _a = 0.04 eV) for thermal quenching of photoluminescence. From the thermoluminescence spectra, we determined the trap depths: 0.31, 0.44, 0.53, 0.59 eV. The lifetime of the excited state 4f6 5d of the Eu²⁺ ions in the CaGa₂Se₄ crystal found from the luminescence decay kinetics is 3.8 μsec. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 112–116, January–February, 2009.     

Ultraviolet luminescence of single crystals and single-crystal films of YAlO3

The nature of intrinsic emission bands of yttrium orthoaluminate in the UV spectral region at _max=220 nm (5.63 eV) and 330 nm (4.13 eV) is studied on the basis of the luminescence of single crystals and single-crystal films of YAlO₃ and Ce: YAlO₃ excited by synchrotron radiation sources with an energy of 3–25 eV at 9 and 300 K. The single crystals and single-crystal films were obtained, respectively, from solution and solution-melt by liquid-phase epitaxy and are characterized by considerably different concentrations of substitutional and vacancy defects. It is found that only the luminescence band at 300 nm, which has the decay time τ=4.1 ns and is excited in a band shifted from the range of interband transitions by 0.25 eV, has exciton-like character. The luminescence band at 220 nm with τ=0.1 µs at 9K, which is observed only for YAlO₃ single crystals and is absent in the luminescence of single-crystal films, is associated with antisite defects of the Y _Al ³⁺ type, which are a specific type of cationic isoelectronic impurities. It is shown that the phosphors based on single-crystal films of YAlO₃ have a simpler scintillation decay kinetics than their bulk analogues due to the absence of channels of excitation energy dissipation associated with the antisite defects of Y _Al ³⁺ type and vacancy defects.     

Synthesis and photoluminescence properties of aqueous CdWO4 quantum dots with WO6 luminescence center

Aqueous CdWO₄ QDs were synthesized by the reaction of CdCl₂ and Na₂WO₄ in the presence of mercaptoacetic acid (TGA) as capping reagent. The crystal morphology, particle size and its distribution of as-prepared products were characterized by transmission electron microscopy (TEM, SAED) atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and photon correlation spectroscopy (PCS), respectively. Qualitative assays for functional groups on the QDs’ surface were measured by fourier transform infrared spectroscopy (FTIR). Photoluminescence properties of QDs were studied by photoluminescence spectroscopy (PL). The results showed that the single QD with diameter of about 8 ± 2 nm was single-crystal. The particle size distribution of QDs was normal. Infrared absorption bands of carboxylic group on the surface of CdWO₄ QDs were observed around 1610-1550 cm⁻¹ (nonsymmetrical vibration of -COO⁻) and 1400 cm⁻¹ (symmetric vibration of C-O). With reaction-time going, PL peak position shifted from 498 to 549 nm and intensity of PL increased first and then decreased. PL peak position of QDs was blue-shift compared with 570 nm WO₆⁶⁻ luminescence center of bulk CdWO₄.     

Anti-stokes luminescence of solid AgCl<Subscript>0.95</Subscript>I<Subscript>0.05</Subscript> solutions

An anti-Stokes luminescence band with λ_max = 515 nm of microcrystals of solid AgCl_0.95I_0.05 solutions excited by a radiation flux of density 10¹³–10¹⁵ quanta/cm²·sec in the range 600–800 nm at 77 K was detected. It is shown that the intensity of this luminescence and the frequency of its excitation depend on the prior UV-irradiation of samples. Analysis of the stimulated-photoluminescence spectra and the anti-Stokes luminescence excitation spectra of the indicated microcrystals has shown that to the centers of anti-Stokes luminescence excitation correspond local levels in the forbidden band of the crystals. These states are apparently due to the atomic and molecular disperse silver particles that can be inherent in character or formed as a result of a low-temperature photochemical process. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 738–742, November–December, 2005.     

Photoinduced electron transfer in solutions of A Pd-porphyrin-quinone complex

Photoinduced electron transfer (PET) in a Pd-porphyrin-quinone complex (Pd-P-Q) was investigated using the flash photolysis method in microsecond and picosecond range and by luminescence. The investigations were performed for toluene solutions. Intramolecular PETs in the lower excited singlet state (k_CT=1.7·10¹⁰ sec⁻¹) and in the triplet state (k_CT=2.5·10⁸sec⁻¹) were observed. For a quantum yield of the triplet state that is close to 1 in Pd-porphyrin (Pd-P) this yield is equal to 0.4 in Pd-P-Q. This decrease is the result of PET in the excited state and, possibly, in an unrelaxed triplet state. Triplet Pd-P-Q molecules were efficiently quenched by unexcited molecules, and this process is related to intermolecular charge transfer. This electron transfer is likely to occur from the Pd-P protion of an excited molecule to the quinone protion of an unexcited molecule in the collisional complex (Pd-P-Q)₂. Charged radicals, formed once the collisional complex is transferred and separated, have a wide absorption band with a maximum of about 960 nm. The average lifetime of the radicals was about 2 msec. Institute of Molecular and Atomic Physics, Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No 1 pp. 61–70, January–February, 1997.     

Anti-stokes luminescence of Zn<Subscript>0.6</Subscript>Cd<Subscript>0.4</Subscript>S solid solutions with adsorbed organic dye molecules and few-atom silver clusters

For microcrystals of Zn_0.6Cd_0.4S with adsorbed molecules of a number of organic dyes, we have observed sensitized anti-Stokes luminescence excited by radiation with wavelengths in the range 610–750 nm and flux density 10¹⁴–10¹⁵ photons/cm²·sec. The positions of the bands in the excitation spectra for such luminescence match those of the absorption spectra for the adsorbed dye molecules, which is evidence in favor of a cooperative mechanism for its appearance. We have shown that enhancement of the anti-Stokes luminescence is possible when silver atoms and few-atom clusters appear on the Zn_0.6Cd_0.4S surface in addition to the dye molecules. We hypothesize that its excitation in the latter case occurs as a result of two-photon optical transitions. These transitions occur sequentially, with transfer of an electron or the electronic excitation energy from the dye molecules to silver atoms and few-atom clusters adsorbed on the surface of Zn_0.6Cd_0.4S, creating deep localized states in the bandgap with photoionization energies 1.80–2.00 eV. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 617–621, September–October, 2007.     

Use of short-wavelength synchrotron radiation to measure luminescence quantum yield and the luminescence excitation spectrum of polymers

We describe an optical diagnostics module and the instrumental and methodological features of ultrahigh vacuum experiments investigating the optical characteristics of condensed media in the short-wavelength (hv ~ 3.5–25 eV) range of the spectrum of probing synchrotron radiation. We give a brief presentation of the results of an experimental determination of the spectral dependence of the luminescence quantum yield and the luminescence excitation spectrum of ablatable polymer dielectrics on the Kurchatov synchrotron radiation source at values of the probing radiation power density (I ₀ ~ 10¹² photons/cm²∙sec) that are below threshold for extended surface vaporization and a surface temperature of the condensed targets equal to 77–300 K.     

The effect of electron irradiation on the optical properties of the natural armenian zeolite-clinoptilolite

Infrared (IR) absorption and luminescence in chemically and radiation-modified natural Armenian Zeolite (clinoptilolite) samples have been studied. The luminescence was studied in 390–450 nm and 620–710 nm wavelength bands, and the IR measurements were carried out in the 400–5400 cm⁻¹ range. It is shown that the luminescence intensity depends on the content of pure clinoptilolite in the samples and, probably on the distribution of “passive” luminescence centers over Si and Al sites that became “active” under radiation or chemical treatment. The samples of electron irradiated clinoptilolite have higher luminescence intensity than the chemically and thermally treated ones. A decrease in the intensity of IR absorption bands at 3550 cm⁻¹ and 3650 cm⁻¹ was found after irradiation.     

Photostimulated transformations of radiation color centers of SrCl2−Ce crystals

Spectra of x-ray radiation-induced absorption of SrCl₂−Ce crystals in the region of 340–830 nm under the effect of selective irradiation in the induced-absorption bands by both conventional and laser sources are investigated. It is established that irradiation of sufficient intensity causes irreversible photochemical transformations of PC, PC⁺, and Ce²⁺ color centers their destruction, and restoration of the transparency of the crystals. To whom correspondence should be addressed. I. Franko Lvov State University, 8, Kirill and Mefodii Str., Lvov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 5, pp. 666–668, September–October, 1999.     

Spectroscopy of Sm3+ activator centers in Ca3Ga2Ge4O14 single crystals

Results of investigations of spectroscopic properties of Ca₃Ga₂Ge₄O₁₄ single crystals activated with Sm³⁺ ions are reported. It is shown that Sm³⁺ ions in Ca₃Ga₂Ge₄O₁₄ form a type of activator quasicenter whose nature is associated with disordering of the matrix. I. Franko Lvov State University, 50, Dragomanov St., Lvov, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 296–298, March–April, 1998.     

Photoemission investigations on nanostructured TiO2 grown by cluster assembling

Nanostructured titanium dioxide (ns-TiO₂) films were grown by supersonic cluster beam deposition method. Transmission electron microscopy demonstrated that films are mainly composed by TiO₂ nanocrystals embedded in an amorphous TiO₂ phase while their electronic structure was studied by photoemission spectroscopy. The cluster assembled ns-TiO₂ films are expected to exhibit several structural and chemical defects owing to the large surface to volume ratio of the deposited clusters. Ultraviolet photoemission spectra (hv = 50 eV) from the valence band unveil the presence of a restrained amount of surface Ti 3d defect states in the band gap, whereas Ti 2p core level X-ray photoelectron (hv = 630 eV) spectra do not manifestly disclose these defects.     

The development of the physical and electrical characteristics of multi-layer TiO<Subscript>2</Subscript>–W–TiO<Subscript>2</Subscript> thin films

In this study, two different thin films, TiO₂ thin film and TiO₂–W–TiO₂ multi-layer thin films (W, tungsten), are prepared by RF magnetron sputtering onto glass substrates. The crystal structure, morphology, and transmittance of TiO₂ and TiO₂–W–TiO₂ multi-layer thin films are investigated by X-ray diffraction, SEM, and UV-Vis spectrometer, respectively. The amorphous, rutile, and anatase TiO₂ phases are observed in the TiO₂ thin film and in the TiO₂–W–TiO₂ multi-layer thin films. The deposition of tungsten as the inter-layer will have large effect on the transmittance and phase ratios of rutile and anatase phases in the TiO₂–W–TiO₂ multi-layer thin films. The crystal intensities of amorous TiO₂ will decrease as the tungsten is used as the middle layer in the multi-layer structure. The band gap energy values of TiO₂ thin film and TiO₂–W–TiO₂ multi-layer thin films are evaluated from (αhν)^1/2 versus energy plots, and the calculated results show that the energy gap decreases from 3.21 eV (TiO₂ thin film) to 3.08∼3.03 EV (TiO₂–W–TiO₂ multi-layer thin films).     

Optical characterization of the deep Cr level in GaAs

Comparison between the excitation spectra of luminescence (ESL) of the 0.57 eV band (typical of p or SI materials) and of the 0.62 eV band (typical of n samples) with the photoionization cross-sections σ⁰_n(hv) and σ⁰_p(hv) of the chronium level leads us to attribute unambiguously these luminescence transitions to the (Cr³⁺?Cr²⁺) center in chromium doped GaAs.     

VO2-WO3 nanocomposite thin films synthesized by pulsed laser deposition technique

Pure VO₂ and VO₂-WO₃ composite thin films were grown on quartz substrate by pulsed laser deposition (PLD) technique. The influence of varying WO₃ molar concentration in the range from x = 0.0 to x = 0.4 on structural, electrical and optical properties of VO₂-WO₃ nanocomposite thin films has been systematically investigated. X-ray diffraction studies reveal the single crystalline monoclinic VO₂ phase (m-VO₂) up to 10% of WO₃ content whereas both m-VO₂ as well as h-WO₃ (hexagonal WO₃) phases were present at higher WO₃ content (0.2 ≤ x ≤ 0.4). Optical transmittance spectra of the films showed blue shift in the absorption edge with increase in WO₃ content. Temperature dependence of resistivity (R-T) measurements indicates significant variation in metal-insulator transition temperature, width of the hysteresis, and shape of the hysteresis curve. Cyclic Voltammetry measurements were performed on VO₂-WO₃ thin films. A direct correlation between V/W ratio and structure-property relationship was established. The present investigations reveal that doping of WO₃ in VO₂ is effective to increase the optical transmittance and to reduce the semiconductor to metal phase transition temperature close to room temperature.     

Beta-gamma-gamma directional correlation in103Rh

β-γ-γ directional correlation studies for the cascades (i)β-rays ofE _max=0.12 MeV,γ-rays of 557 keV andγ-rays of 53 keV and (ii)β-rays ofE _max=0.21 MeV,γ-rays of 444 keV andγ-rays of 53 keV have been made. The triple correlation functionsW(θ) were obtained to beW(θ)=1+(−0.153±0.031)P ₂(cosθ)+(0.004±0.035)P ₄(cosθ) forβ-rays ofE _max 0.12 MeV→557→53 keV cascade andW(θ)=1+(0.163±0.042)P ₂(cosθ)+(−0.035±0.058)P ₄(cosθ) forβ rays ofE _max=0.21 MeV→444 keV→53 keV cascade. Spins and parities of the 650, 537 and 93 keV levels of¹⁰³Rh are deduced by triple angular correlation and the internal conversion coefficient studies. Multipolarities of the transitions are also determined.     

Microscopic study of low-lying yrast spectra in <Superscript>100–108</Superscript>Mo isotopes

Variation-after-projection (VAP) calculations in conjunction with Hartree-Bogoliubov (HB) ansatz have been carried out for A=100−108 molybdenum (Mo) isotopes. In this framework, the yrast spectra with J _max ^π ≥10⁺, B(E2) transition probabilities, quadrupole (β₂) and hexadecapole (β₄) deformation parameters, moment of inertia (I) and square of cranking frequency (ω²) for even-even Mo isotopes have been obtained. The results of the calculation give an indication that it is important to include the hexadecapole-hexadecapole component of the two-body interaction for obtaining various nuclear structure quantities in these Mo isotopes.     

Sensitized anti-Stokes luminescence centers in microcrystals of Zn<Subscript>0.6</Subscript>Cd<Subscript>0.4</Subscript>S solid solutions with adsorbed dye molecules and few-atomic silver clusters

The sensitized anti-Stokes luminescence excited by radiation with wavelengths from 610 to 750 nm and flux densities of 10¹⁴–10¹⁵ quanta/(cm²·s) is detected for microcrystals of Zn _0.6 Cd _0.4 S solid solutions with adsorbed organic malachite green and methylene blue dye molecules. The position of its excitation spectra coincides with that of the absorption spectra of adsorbed dye molecules, which suggests the cooperative mechanism of its occurrence. The possibility of amplification of the anti-Stokes luminescence by means of adsorption of silver atoms and few-atomic silver clusters, in addition to the dye molecules, on the Zn _0.6 Cd _0.4 S surface is investigated. It is assumed that in the latter case, the anti-Stokes luminescence is excited as a result of two-quantum optical transitions with electron or electron excitation energy transfer from the dye molecules adsorbed on the Zn _0.6 Cd _0.4 S surface to silver atoms and few-atomic silver clusters creating deep local states with photoionization energies of 1.8–2.0 eV in the gap. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 21–26, March, 2008.     

Slow components of the emission decay in fluoride crystals doped with Ce3+

Spatially separated defects created by photons with energies 6–8 eV in alkali-earth fluoride crystals doped with cerium are investigated with the help of thermoluminescence. Measuring the spectra of creation of V_k and H peaks of thermostimulated luminescence inBaF ₂:Ce³⁺. we demonstrate that photons with energies higher than 6eV induce H centers (self-trapped holes captured by interstitialF ions), whereas the formation of self-trapped holes begins on exposure to photons with energies greater than 7 eV. The influence of photoionization on theCe ³⁺ luminescence inBaF ₂, SrF₂, CaF₂, andCeF ₃ crystals is investigated in the range of photon energies 4–8 eV. An exponentialCe ³⁺-emisson decay was observed for excitation energy lying in the range 4–6 eV. Slow and fast decay components were observed under excitation by photons with energies higher than 6 eV. We believe that the slow and fast components are due to the tunnel recombination of trapped electrons with hole centers. A. P. Vinogradov Institute of Geochemistry of the Siberian Branch of the Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 43–49, March, 2000.